公开(公告)号：US20110303971A1

公开(公告)日：2011-12-15

申请号：US13157659

申请日：2011-06-10

申请人： Changwon Lee ,  Kihyun Hwang ,  Hanmei Choi ,  Sun Woo Lee ,  Junkyu Yang ,  Sunggil Kim ,  Jeonggil Lee ,  Seon-Ho Jo

发明人： Changwon Lee ,  Kihyun Hwang ,  Hanmei Choi ,  Sun Woo Lee ,  Junkyu Yang ,  Sunggil Kim ,  Jeonggil Lee ,  Seon-Ho Jo

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

摘要： A method for manufacturing a three-dimensional semiconductor memory includes forming a plurality of stacked structures disposed on a substrate to be spaced apart from each other, each of the stacked structures including a plurality of dielectric patterns and a plurality of polysilicon patterns alternately stacked, forming a metal layer to cover sidewalls of the stacked structures and a top surface of the substrate exposed between the stacked structures, and forming stacked gate electrodes on the substrate and a conductive line in the substrate by performing a silicidation process between the metal layer and each of the polysilicon patterns and the substrate.

摘要翻译： 一种三维半导体存储器的制造方法，其特征在于，在基板上形成多个层叠结构，使其彼此间隔开，所述堆叠结构中的每一个包括多个电介质图案和多个多晶硅图案，交替层叠，形成 覆盖层叠结构的侧壁的金属层和露出在层叠结构之间的基板的顶面，通过在金属层与金属层之间进行硅化处理，在基板上形成层叠的栅电极和基板的导电线 多晶硅图案和衬底。

公开(公告)号：US20170062470A1

公开(公告)日：2017-03-02

申请号：US15249090

申请日：2016-08-26

申请人： Hauk HAN ,  Je-Hyeon PARK ,  Kihyun YOON ,  Changwon LEE ,  HyunSeok LIM ,  Jooyeon HA

发明人： Hauk HAN ,  Je-Hyeon PARK ,  Kihyun YOON ,  Changwon LEE ,  HyunSeok LIM ,  Jooyeon HA

IPC分类号： H01L27/115 ,  H01L23/535

CPC分类号： H01L27/11582 ,  H01L21/76847 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53266 ,  H01L23/535 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

摘要： A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.

摘要翻译： 半导体器件包括下结构，其包括下导体，具有露出下结构上的下导体的开口的上结构，以及填充该开口并连接到下导体的连接结构。 连接结构包括覆盖开口的内表面并且限定开口中的凹陷区域的第一钨层和填充第一钨层上的凹陷区域的第二钨层。 连接结构的上部的第二钨层的粒径大于连接结构的下部的第二钨层的粒径。

公开(公告)号：US08324677B2

公开(公告)日：2012-12-04

申请号：US12704365

申请日：2010-02-11

申请人： Sunwoo Lee ,  Sangwoo Lee ,  Changwon Lee ,  Jeonggil Lee

发明人： Sunwoo Lee ,  Sangwoo Lee ,  Changwon Lee ,  Jeonggil Lee

IPC分类号： H01L29/72

CPC分类号： H01L27/11582 ,  H01L21/28282 ,  H01L23/535 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/1159 ,  H01L29/4958 ,  H01L29/4966

摘要： A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern.

摘要翻译： 非易失性存储器件包括三维地布置在半导体衬底上的栅电极，从半导体衬底延伸并与栅电极的侧壁交叉的半导体图案，形成在半导体图案之间并形成在顶表面和底表面上的金属衬垫图案 以及形成在半导体图案和金属衬垫图案之间的电荷存储层。

公开(公告)号：US20120298925A1

公开(公告)日：2012-11-29

申请号：US13512460

申请日：2011-12-14

申请人： Soowan Kim ,  Sangpil Kim ,  Changwon Lee

发明人： Soowan Kim ,  Sangpil Kim ,  Changwon Lee

IPC分类号： H01B1/04 ,  H01B1/02 ,  B82Y30/00 ,  B82Y40/00

CPC分类号： H01B1/124 ,  C08L101/12

摘要： The present invention relates to an electrically conductive polymer filler for preparing electrically conductive plastics and a preparation method thereof. More specifically, the invention relates to an electrically conductive polymer filler comprising carbon nanotube (CNT) microcapsules including carbon nanotubes encapsulated with a thermoplastic resin layer, and to a preparation method and an electrically conductive thermoplastic resin comprising the electrically conductive polymer filler.

摘要翻译： 本发明涉及一种用于制备导电塑料的导电聚合物填料及其制备方法。 更具体地，本发明涉及包含碳纳米管（CNT）微胶囊的导电聚合物填料，其包括用热塑性树脂层包封的碳纳米管，以及包含导电聚合物填料的制备方法和导电热塑性树脂。

公开(公告)号：US20100188315A1

公开(公告)日：2010-07-29

申请号：US12385908

申请日：2009-04-23

申请人： Chan Wook BAIK ,  Sun il KIM ,  Changwon LEE

发明人： Chan Wook BAIK ,  Sun il KIM ,  Changwon LEE

IPC分类号： G09G3/00 ,  H01L25/16

CPC分类号： G01J5/02 ,  A61B5/01 ,  A61B5/015 ,  G01J5/0025 ,  G01J5/025 ,  G01J5/08 ,  G01J5/0821 ,  G01J5/0837 ,  G01J5/0896 ,  G01J2005/0077

摘要： An electronic mirror and a method for displaying an image using the electronic mirror are provided. The electronic mirror may include a display unit, a detecting unit and a control unit. The detecting unit may receive a signal transmitted from the outside. The control unit may control the detecting unit and the display unit to display the signal received at the detecting unit on the display unit as an image. The image displayed on the display unit may be output from the electronic mirror through the detecting unit. The electronic mirror may further include a reflecting unit. A light from the outside may pass through the detecting unit and the display unit and then be reflected on the reflecting unit. The reflected light may be output from the electronic mirror through the display unit and the detecting unit.

摘要翻译： 提供电子反射镜和使用电子反射镜显示图像的方法。 电子反射镜可以包括显示单元，检测单元和控制单元。 检测单元可以接收从外部发送的信号。 控制单元可以控制检测单元和显示单元将显示单元上的检测单元接收的信号显示为图像。 显示单元上显示的图像可以通过检测单元从电子反射镜输出。 电子反射镜还可以包括反射单元。 来自外部的光可以通过检测单元和显示单元，然后在反射单元上反射。 反射光可以通过显示单元和检测单元从电子反射镜输出。

公开(公告)号：US09163994B2

公开(公告)日：2015-10-20

申请号：US12385908

申请日：2009-04-23

申请人： Chan Wook Baik ,  Sun il Kim ,  Changwon Lee

发明人： Chan Wook Baik ,  Sun il Kim ,  Changwon Lee

IPC分类号： G09G3/00 ,  G01J5/02 ,  A61B5/01 ,  G01J5/08 ,  G01J5/00

CPC分类号： G01J5/02 ,  A61B5/01 ,  A61B5/015 ,  G01J5/0025 ,  G01J5/025 ,  G01J5/08 ,  G01J5/0821 ,  G01J5/0837 ,  G01J5/0896 ,  G01J2005/0077

摘要： An electronic mirror and a method for displaying an image using the electronic mirror are provided. The electronic mirror may include a display unit, a detecting unit and a control unit. The detecting unit may receive a signal transmitted from the outside. The control unit may control the detecting unit and the display unit to display the signal received at the detecting unit on the display unit as an image. The image displayed on the display unit may be output from the electronic mirror through the detecting unit. The electronic mirror may further include a reflecting unit. A light from the outside may pass through the detecting unit and the display unit and then be reflected on the reflecting unit. The reflected light may be output from the electronic mirror through the display unit and the detecting unit.

摘要翻译： 提供电子反射镜和使用电子反射镜显示图像的方法。 电子反射镜可以包括显示单元，检测单元和控制单元。 检测单元可以接收从外部发送的信号。 控制单元可以控制检测单元和显示单元将显示单元上的检测单元接收的信号显示为图像。 显示单元上显示的图像可以通过检测单元从电子反射镜输出。 电子反射镜还可以包括反射单元。 来自外部的光可以通过检测单元和显示单元，然后在反射单元上反射。 反射光可以通过显示单元和检测单元从电子反射镜输出。

公开(公告)号：US20100207185A1

公开(公告)日：2010-08-19

申请号：US12704365

申请日：2010-02-11

申请人： Sunwoo Lee ,  Sangwoo Lee ,  Changwon Lee ,  Jeonggil Lee

发明人： Sunwoo Lee ,  Sangwoo Lee ,  Changwon Lee ,  Jeonggil Lee

IPC分类号： H01L29/792

CPC分类号： H01L27/11582 ,  H01L21/28282 ,  H01L23/535 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/1159 ,  H01L29/4958 ,  H01L29/4966

摘要： A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern.

摘要翻译： 非易失性存储器件包括三维地布置在半导体衬底上的栅电极，从半导体衬底延伸并与栅电极的侧壁交叉的半导体图案，形成在半导体图案之间并形成在顶表面和底表面上的金属衬垫图案 以及形成在半导体图案和金属衬垫图案之间的电荷存储层。

公开(公告)号：US10079245B2

公开(公告)日：2018-09-18

申请号：US15249090

申请日：2016-08-26

申请人： Hauk Han ,  Je-Hyeon Park ,  Kihyun Yoon ,  Changwon Lee ,  HyunSeok Lim ,  Jooyeon Ha

发明人： Hauk Han ,  Je-Hyeon Park ,  Kihyun Yoon ,  Changwon Lee ,  HyunSeok Lim ,  Jooyeon Ha

IPC分类号： H01L23/52 ,  H01L27/11582 ,  H01L27/1157 ,  H01L23/535

CPC分类号： H01L27/11582 ,  H01L21/76847 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53266 ,  H01L23/535 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

摘要： A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.

公开(公告)号：US20120094453A1

公开(公告)日：2012-04-19

申请号：US13273935

申请日：2011-10-14

申请人： Hauk Han ,  Byoung-Kyu Lee ,  Jingi Hong ,  Changwon Lee ,  Eungjoon Lee ,  Je-Hyeon Park ,  Jeonggil Lee

发明人： Hauk Han ,  Byoung-Kyu Lee ,  Jingi Hong ,  Changwon Lee ,  Eungjoon Lee ,  Je-Hyeon Park ,  Jeonggil Lee

IPC分类号： H01L21/336

CPC分类号： H01L29/7827 ,  H01L27/11582 ,  H01L29/66666 ,  H01L29/7926

摘要： Semiconductor devices and methods of fabricating semiconductor devices that may include forming an insulation structure including insulation patterns that are sequentially stacked and vertically separated from each other to provide gap regions between the insulation patterns, forming a first conductive layer filling the gap regions and covering two opposite sidewalls of the insulation structure, and forming a second conductive layer covering the first conductive layer. A thickness of the second conductive layer covering an upper sidewall of the insulation structure is greater than a thickness of the second conductive layer covering a lower sidewall of the insulation structure.

摘要翻译： 制造半导体器件的半导体器件和方法，其可以包括形成绝缘结构，所述绝缘结构包括彼此依次层叠并垂直分离的绝缘图案，以在绝缘图案之间提供间隙区域，形成填充间隙区域并覆盖两个相对的间隔区域的第一导电层 并且形成覆盖第一导电层的第二导电层。 覆盖绝缘结构的上侧壁的第二导电层的厚度大于覆盖绝缘结构的下侧壁的第二导电层的厚度。

公开(公告)号：US20120074236A1

公开(公告)日：2012-03-29

申请号：US13310324

申请日：2011-12-02

申请人： Jaewoong Kim ,  Jungho Kwon ,  Taewoong Lim ,  Joonhyung Park ,  Changwon Lee ,  Kilyong Jang

发明人： Jaewoong Kim ,  Jungho Kwon ,  Taewoong Lim ,  Joonhyung Park ,  Changwon Lee ,  Kilyong Jang

IPC分类号： F24F5/00

CPC分类号： B60H1/2218 ,  B60H2001/2256 ,  B60H2001/2262 ,  F24F11/30 ,  F24F11/62

摘要： A control method is provided for an air conditioning control system which includes determining whether either a desired discharge temperature from an air-conditioning system to maintain the internal temperature of a vehicle at a desired internal cabin temperature and a desired evaporator temperature that is temperature of an evaporator satisfies a heater operating condition. The heater is then operated in accordance with temperature and traveling conditions of the vehicle to output a desired discharge temperature when the heater operating conditions are satisfied. When, however, a heater discharge temperature from the heater is greater than or equal to a reference heater or the heater discharge temperature is greater than the desired discharge temperature by at least a predetermined temperature or more, then the heater is turned off to prevent over consumption of electricity.

摘要翻译： 提供了一种用于空调控制系统的控制方法，其包括确定来自空调系统的期望排出温度是否将车辆的内部温度保持在期望的内部舱室温度以及期望的蒸发器温度 蒸发器满足加热器工作条件。 然后，当满足加热器工作条件时，根据车辆的温度和行驶条件操作加热器以输出所需的排出温度。 然而，当来自加热器的加热器排出温度大于或等于参考加热器或加热器排出温度大于期望的排放温度至少预定温度或更高时，则关闭加热器以防止过热 消耗电力。