WAFER LEVEL SEQUENCING FLOW CELL FABRICATION

    公开(公告)号:US20190088463A1

    公开(公告)日:2019-03-21

    申请号:US16128120

    申请日:2018-09-11

    IPC分类号: H01L21/02 H01L21/28 H01L29/20

    摘要: A method for forming sequencing flow cells can include providing a semiconductor wafer covered with a dielectric layer, and forming a patterned layer on the dielectric layer. The patterned layer has a differential surface that includes alternating first surface regions and second surface regions. The method can also include attaching a cover wafer to the semiconductor wafer to form a composite wafer structure including a plurality of flow cells. The composite wafer structure can then be singulated to form a plurality of dies. Each die forms a sequencing flow cell. The sequencing flow cell can include a flow channel between a portion of the patterned layer and a portion of the cover wafer, an inlet, and an outlet. Further, the method can include functionalizing the sequencing flow cell to create differential surfaces.