公开(公告)号：US20090026618A1

公开(公告)日：2009-01-29

申请号：US12220527

申请日：2008-07-25

申请人： Hyun-Su Kim ,  Daeyong Kim ,  Eun-Ok Lee ,  Byunghee Kim ,  Jang-Hee Lee ,  Eun-Ji Jung ,  Gilheyun Choi

发明人： Hyun-Su Kim ,  Daeyong Kim ,  Eun-Ok Lee ,  Byunghee Kim ,  Jang-Hee Lee ,  Eun-Ji Jung ,  Gilheyun Choi

IPC分类号： H01L21/768 ,  H01L23/48

CPC分类号： H01L21/76868 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871 ,  H01L23/485 ,  H01L27/105 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of forming a semiconductor device, and a semiconductor device formed according to the method, an insulating layer is provided on an underlying contact region of the semiconductor device. An opening is formed in the insulating layer to expose the underlying contact region. A seed layer is provided on sidewalls and a bottom of the opening, the seed layer comprising cobalt. A barrier layer of conductive material is provided in a lower portion of the opening, the seed layer being exposed on sidewalls of an upper portion of the opening. A metal layer is provided on the barrier layer in the opening to form an interlayer contact, the metal layer contacting the seed layer at the sidewalls of the upper portion of the opening.

摘要翻译： 在形成半导体器件的方法和根据该方法形成的半导体器件中，在半导体器件的下部接触区域上设置绝缘层。 在绝缘层中形成开口以露出下面的接触区域。 种子层设置在开口的侧壁和底部上，籽晶层包含钴。 导电材料的阻挡层设置在开口的下部，籽晶层暴露在开口上部的侧壁上。 金属层设置在开口中的阻挡层上以形成层间接触，金属层在开口上部的侧壁处与种子层接触。

公开(公告)号：US08524615B2

公开(公告)日：2013-09-03

申请号：US13238297

申请日：2011-09-21

申请人： Sang-Hoon Ahn ,  Byung-Hee Kim ,  Sang-Don Nam ,  Kyu-Hee Han ,  Gil-heyun Choi ,  Jang-Hee Lee ,  Jong-Min Baek ,  Kyoung-Hee Kim

发明人： Sang-Hoon Ahn ,  Byung-Hee Kim ,  Sang-Don Nam ,  Kyu-Hee Han ,  Gil-heyun Choi ,  Jang-Hee Lee ,  Jong-Min Baek ,  Kyoung-Hee Kim

IPC分类号： H01L21/469 ,  H01L21/31 ,  H01L21/44

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/76829 ,  H01L2221/1047

摘要： Example embodiments relate to a method of forming a hardened porous dielectric layer. The method may include forming a dielectric layer containing porogens on a substrate, transforming the dielectric layer into a porous dielectric layer using a first UV curing process to remove the porogens from the dielectric layer, and transforming the porous dielectric layer into a crosslinked porous dielectric layer using a second UV curing process to generate crosslinks in the porous dielectric layer.

摘要翻译： 示例性实施方案涉及形成硬化多孔介电层的方法。 该方法可以包括在衬底上形成含有致孔剂的电介质层，使用第一UV固化工艺将电介质层转化为多孔介电层，以从电介质层除去致孔剂，并将多孔电介质层转化成交联的多孔介电层 使用第二UV固化方法在多孔介电层中产生交联。

公开(公告)号：US07439176B2

公开(公告)日：2008-10-21

申请号：US11379350

申请日：2006-04-19

申请人： Jae-Hwa Park ,  Jang-Hee Lee ,  Dae-Yong Kim ,  Hee-Sook Park

发明人： Jae-Hwa Park ,  Jang-Hee Lee ,  Dae-Yong Kim ,  Hee-Sook Park

IPC分类号： H01L21/44 ,  H01L23/52

CPC分类号： H01L21/823842 ,  H01L21/823828 ,  H01L21/823835

摘要： In one embodiment, a semiconductor device comprises a semiconductor substrate and a doped conductive layer formed over the semiconductor substrate. A diffusion barrier layer is formed over the doped conductive layer. The diffusion barrier layer comprises an amorphous semiconductor material. After forming the diffusion barrier layer, a heat treatment process may be additionally performed thereon. An ohmic contact layer is formed over the diffusion barrier layer. A metal barrier layer is formed over the ohmic contact layer. A metal layer is formed over the metal barrier layer.

摘要翻译： 在一个实施例中，半导体器件包括形成在半导体衬底上的半导体衬底和掺杂导电层。 在掺杂导电层上方形成扩散阻挡层。 扩散阻挡层包括非晶半导体材料。 在形成扩散阻挡层之后，还可以在其上进行热处理工艺。 在扩散阻挡层上形成欧姆接触层。 金属阻挡层形成在欧姆接触层上。 在金属阻挡层上形成金属层。

公开(公告)号：US20080121983A1

公开(公告)日：2008-05-29

申请号：US11606899

申请日：2006-12-01

申请人： Geum-Jung Seong ,  Gil-Heyun Choi ,  Byung-Hee Kim ,  Tae-Ho Cha ,  Hee-Sook Park ,  Jang-Hee Lee

发明人： Geum-Jung Seong ,  Gil-Heyun Choi ,  Byung-Hee Kim ,  Tae-Ho Cha ,  Hee-Sook Park ,  Jang-Hee Lee

IPC分类号： H01L29/792 ,  H01L21/28

CPC分类号： H01L29/792 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/40117 ,  H01L29/4234

摘要： A gate of a memory device may include a charge trapping structure having a tunnel oxide layer, a charge storing layer, and a blocking layer on a semiconductor substrate; a conductive pattern on the charge trapping structure, the conductive pattern including metal nitride; an ohmic film on the conductive pattern; and a gate electrode on the ohmic film.

摘要翻译： 存储器件的栅极可以包括在半导体衬底上具有隧道氧化物层，电荷存储层和阻挡层的电荷俘获结构; 电荷捕获结构上的导电图案，导电图案包括金属氮化物; 导电图案上的欧姆膜; 和欧姆膜上的栅电极。

公开(公告)号：US5927098A

公开(公告)日：1999-07-27

申请号：US986230

申请日：1997-12-05

申请人： Jang-Hee Lee

发明人： Jang-Hee Lee

IPC分类号： A23G9/16 ,  A23G9/12 ,  A23G9/22

CPC分类号： A23G9/12 ,  A23G9/22

摘要： A household ice-cream machine comprises a mixing blade driven and rotated by a motor for mixing material for ice-cream in a cylindrical container. A pair of holding members are disposed to be in contact with an outer surface of the cylindrical container. Each of the pair of holding members is formed in an arch shape. Each of the pair of holding members has projections formed on and bent from one end of each of the pair of holding members. The fastened projections are oppositely disposed and connected to each other by a pair of fastening members. Each of a pair of cooling members is formed in an arch shape and has an evaporating pipe integrally formed therein. Each of the pair of cooling members is disposed to be in contact with an outer surface of each of the pair of holding members.

摘要翻译： 家用冰淇淋机包括由马达驱动和旋转的混合叶片，用于将用于冰淇淋的材料混合在圆柱形容器中。 一对保持构件设置成与圆筒形容器的外表面接触。 一对保持构件中的每一个形成为拱形。 所述一对保持构件中的每一个具有形成在所述一对保持构件的每一个的一端上并且从其弯曲的突起。 紧固的突起相对设置并且通过一对紧固构件彼此连接。 一对冷却构件中的每一个形成为拱形，并且具有一体地形成在其中的蒸发管。 一对冷却构件中的每一个被设置成与一对保持构件的每一个的外表面接触。

公开(公告)号：US07585787B2

公开(公告)日：2009-09-08

申请号：US11648595

申请日：2007-01-03

申请人： Tae-Ho Cha ,  Gil-Heyun Choi ,  Byung-Hee Kim ,  Hee-Sook Park ,  Jang-Hee Lee ,  Geum-Jung Seong

发明人： Tae-Ho Cha ,  Gil-Heyun Choi ,  Byung-Hee Kim ,  Hee-Sook Park ,  Jang-Hee Lee ,  Geum-Jung Seong

IPC分类号： H01L21/469

CPC分类号： H01L29/4941 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11536 ,  H01L27/11568 ,  H01L29/513

摘要： A semiconductor memory device, e.g., a charge trapping type non-volatile memory device, may include a charge trapping structure formed in a first area of a substrate and a gate structure formed in a second area of the substrate. The charge trapping structure may include a tunnel oxide layer pattern, a charge trapping layer pattern and a dielectric layer pattern of aluminum-containing tertiary metal oxide. The gate structure may include a gate oxide layer pattern, a polysilicon layer pattern and an ohmic layer pattern of aluminum-containing tertiary metal silicide. A first electrode and a second electrode may be formed on the charge trapping structure. A lower electrode and an upper electrode may be provided on the gate structure. The dielectric layer pattern may have a higher dielectric constant, and the ohmic layer pattern may have improved thermal stability, thereby enhancing programming and erasing operations of the charge trapping type non-volatile memory device.

摘要翻译： 半导体存储器件，例如电荷俘获型非易失性存储器件，可以包括形成在衬底的第一区域中的电荷俘获结构和形成在衬底的第二区域中的栅极结构。 电荷捕获结构可以包括隧道氧化物层图案，电荷俘获层图案和含铝三级金属氧化物的介电层图案。 栅极结构可以包括栅极氧化物层图案，多晶硅层图案和含铝三次金属硅化物的欧姆层图案。 第一电极和第二电极可以形成在电荷捕获结构上。 可以在栅极结构上设置下电极和上电极。 电介质层图案可以具有更高的介电常数，并且欧姆层图案可以具有改善的热稳定性，从而增强电荷俘获型非易失性存储器件的编程和擦除操作。

公开(公告)号：US07534709B2

公开(公告)日：2009-05-19

申请号：US11233580

申请日：2005-09-23

申请人： Jae-Hwa Park ,  Gil-Heyun Choi ,  Chang-Won Lee ,  Byung-Hak Lee ,  Hee-Sook Park ,  Woong-Hee Sohn ,  Jong-Ryeol Yoo ,  Sun-Pil Yun ,  Jang-Hee Lee ,  Dong-Chan Lim

发明人： Jae-Hwa Park ,  Gil-Heyun Choi ,  Chang-Won Lee ,  Byung-Hak Lee ,  Hee-Sook Park ,  Woong-Hee Sohn ,  Jong-Ryeol Yoo ,  Sun-Pil Yun ,  Jang-Hee Lee ,  Dong-Chan Lim

IPC分类号： H01L21/3205

CPC分类号： H01L21/76841 ,  H01L21/28061 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/4933 ,  H01L29/4941

摘要： Embodiments of the present invention include semiconductor devices that can be made with relatively low resistance, and methods of forming the semiconductor devices. A resistance reducing layer is formed between a polysilicon layer and a metal layer. As a result, an interface resistance between the polysilicon layer and the metal layer is greatly reduced and a distribution of the interface resistance is very uniform. As a result, a conductive structure including the resistance reducing layer has a greatly reduced sheet resistance to improve electrical characteristics of a semiconductor device having the conductive structure.

摘要翻译： 本发明的实施例包括可以制造成具有较低电阻的半导体器件，以及形成半导体器件的方法。 在多晶硅层和金属层之间形成电阻降低层。 结果，多晶硅层和金属层之间的界面电阻大大降低，并且界面电阻的分布非常均匀。 结果，包括电阻降低层的导电结构具有大大降低的薄层电阻以改善具有导电结构的半导体器件的电特性。

公开(公告)号：US07124585B2

公开(公告)日：2006-10-24

申请号：US10504805

申请日：2003-02-14

申请人： Young-Min Kim ,  Dong-Gil Shin ,  Jang-Hee Lee

发明人： Young-Min Kim ,  Dong-Gil Shin ,  Jang-Hee Lee

IPC分类号： F01K7/02 ,  F01K1/00 ,  F01K7/22 ,  F01K25/10 ,  F01C1/04 ,  F01C11/00 ,  F01C21/00 ,  F04C18/04 ,  F04C23/00

CPC分类号： F01K7/00 ,  F01C11/004 ,  F01K27/00 ,  F02B53/00 ,  F04C18/0223 ,  F04C23/003 ,  F25B9/06 ,  F25B9/14 ,  F25B2309/1401

摘要： The present invention provides a scroll-type expander that simultaneously performs expansion and re-heating such that efficient expansion is realized and there is no reduction in efficiency caused by pressure loss occurring during the supply of an working fluid to the scroll-type expander, and that minimizes a difference in temperature between a stationary scroll member and a rotating scroll member, as well as a temperature distribution of a scroll wrap. The present invention also relates to a heat exchange system that uses a scroll-type expander to replace pistons in a conventional reciprocating Stirling engine or refrigerator with a pair of scroll-type compressor and expander such that the heat exchange system may be used as a Stirling engine or refrigerator. The present invention also provides a steam engine, in which a steam turbine in the conventional steam engine (Rankine system) is replaced with a scroll-type expander such that the steam cycle has both a re-heating cycle and a regeneration cycle.

摘要翻译： 本发明提供一种涡卷式膨胀机，其同时进行膨胀和再加热，从而实现有效的膨胀，并且在向涡旋式膨胀机供给工作流体期间发生的压力损失不会降低效率， 使得固定涡旋构件和旋转涡旋构件之间的温度差最小化以及涡卷的温度分布。 本发明还涉及一种热交换系统，其使用涡旋式膨胀机来代替常规的往复式斯特林发动机或冰箱中的活塞与一对涡旋式压缩机和膨胀机，使得热交换系统可用作斯特林 发动机或冰箱。 本发明还提供一种蒸汽发动机，其中常规蒸汽发动机（兰金系统）中的蒸汽轮机被涡旋式膨胀机代替，使得蒸汽循环具有再加热循环和再生循环。

公开(公告)号：US5529036A

公开(公告)日：1996-06-25

申请号：US383374

申请日：1995-02-03

申请人： Young-Il Jeong ,  Jang-Hee Lee ,  Kern-Yong Kang

发明人： Young-Il Jeong ,  Jang-Hee Lee ,  Kern-Yong Kang

IPC分类号： F01L1/38 ,  F01L3/06 ,  F02B31/00 ,  F02B75/02

CPC分类号： F01L3/06 ,  F02B2075/025 ,  F02B2275/48 ,  Y02T10/125 ,  Y02T10/146

摘要： This invention relates to a scavenging shroud mechanism for improving scavenging of a 2-stroke engine, and more particularly to a scavenging shroud mechanism for improving scavenging of a 2-stroke engine which is constructed such that a scavenging shroud mechanism is provided to a scavenging valve whereby compressed air sucked into an interior of a combustion chamber makes a tumble phenomenon along with cylinder wall surface and thereby pushes out already burned burnt gas and simultaneously is capable of efficiently feeding new air so that efficient reverse loop scavenging system is made. The scavenging shroud mechanism has a baffle 2, shroud guide notch 3 and a shroud neck 4, and a fixed supporting pin 6 and a supporting guide 5 provided on the inner side of the intake manifold 9. A shroud guide notch 3 is provided in the baffle 2 so as to permit the scavenging shroud mechanism 1 to up and down-ward movement but not right and left rotational movement.

摘要翻译： 本发明涉及一种用于改善二冲程发动机的清扫的清扫护罩机构，更具体地涉及一种用于改善二冲程发动机的扫气的扫气护罩机构，其被构造成使清扫护罩机构设置在扫气阀 吸入燃烧室内部的压缩空气与气缸壁面一起发生翻滚现象，从而推出已经燃烧的燃烧气体，同时能够有效地供给新的空气，从而形成有效的反向回路清除系统。 清扫护罩机构具有挡板2，护罩引导槽3和护罩颈部4，以及设置在进气歧管9的内侧的固定支撑销6和支撑引导件5.护罩引导槽3设置在 挡板2，以便允许扫气罩机构1向上和向下移动，但不允许左右旋转运动。

公开(公告)号：US20080093660A1

公开(公告)日：2008-04-24

申请号：US11653166

申请日：2007-01-12

申请人： Hee-Sook Park ,  Byung-Hak Lee ,  Tae-Ho Cha ,  Woong-Hee Sohn ,  Jang-Hee Lee ,  Jae-Hwa Park

发明人： Hee-Sook Park ,  Byung-Hak Lee ,  Tae-Ho Cha ,  Woong-Hee Sohn ,  Jang-Hee Lee ,  Jae-Hwa Park

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L29/792 ,  H01L29/40114 ,  H01L29/513

摘要： A flash memory device includes a semiconductor substrate, a gate insulating layer having a first width formed on the semiconductor substrate to trap carriers tunneled from the semiconductor substrate and a metal electrode on the gate insulating layer to receive a voltage required for tunneling. The metal electrode having a second width smaller than the first width. The flash memory device further includes a sidewall spacer surrounding a side surface of the metal electrode to prevent oxidation of the metal electrode.

摘要翻译： 闪速存储器件包括半导体衬底，栅极绝缘层，其具有形成在半导体衬底上的第一宽度，以捕获从半导体衬底隧穿的载流子，以及栅极绝缘层上的金属电极，以接收隧道所需的电压。 金属电极的第二宽度小于第一宽度。 闪存器件还包括围绕金属电极的侧表面的侧壁间隔件，以防止金属电极的氧化。