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公开(公告)号：US09147798B2
公开(公告)日：2015-09-29
申请号：US13421402
申请日：2012-03-15
CPC分类号： H01L33/0079 , H01L33/005 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2933/0016 , H01L2933/0025
摘要： According to one embodiment, a semiconductor light emitting element includes a light emitting element includes a semiconductor stacked body including a light emitting layer, a reflection layer, a support substrate, a first bonding electrode and a second bonding electrode. The reflection layer is made of a metal and has a first surface and a second surface opposite to the first surface. The semiconductor stacked body is provided on a side of the first surface of the reflection layer. The first bonding electrode is provided between the second surface and the support substrate and includes a convex portion projected toward the support substrate and a bottom portion provided around the convex portion in plan view. The second bonding electrode includes a concave portion fitted in the convex portion of the first bonding electrode and is capable of bonding the support substrate and the first bonding electrode.
摘要翻译： 根据一个实施例，半导体发光元件包括发光元件，其包括包括发光层，反射层，支撑衬底，第一接合电极和第二接合电极的半导体层叠体。 反射层由金属制成，具有与第一表面相对的第一表面和第二表面。 半导体层叠体设置在反射层的第一表面的一侧。 第一接合电极设置在第二表面和支撑基板之间，并且包括朝向支撑基板突出的凸部和在俯视图中设置在凸部周围的底部。 第二接合电极包括嵌合在第一接合电极的凸部中并能够接合支撑基板和第一接合电极的凹部。
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公开(公告)号：US20090045425A1
公开(公告)日：2009-02-19
申请号：US12191659
申请日：2008-08-14
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.
摘要翻译： 一种半导体发光器件包括：支撑衬底; 设置在所述支撑基板上的金属层; 设置在所述金属层上并包括发光层的半导体层; 包含半导体的接触层，选择性地设置在所述半导体层和所述金属层之间，并与所述半导体层和所述金属层接触; 以及在不与接触层重叠的位置处在半导体层和金属层之间设置的绝缘膜。
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公开(公告)号：US06528823B2
公开(公告)日：2003-03-04
申请号：US09961177
申请日：2001-09-24
IPC分类号： H01L2906
CPC分类号： H01L33/305
摘要： A semiconductor light-emitting element, including a double hetero structure formed of III-V group compound semiconductor layers including an active layer acting as a light emitting layer and an n-type cladding layer and a p-type cladding layer having the active layer sandwiched therebetween, a p-type layer laminated on the double hetero structure and containing a concentration of Zn as a dopant, and a Zn diffusion preventing layer interposed between the active layer of the double hetero structure and the p-type layer having a high Zn concentration.
摘要翻译： 一种半导体发光元件，包括由作为发光层的有源层和n型包覆层的III-V族化合物半导体层形成的双异质结构体和具有夹层的活性层的p型覆层 其间层压在双异质结构上并含有Zn作为掺杂剂的浓度的p型层，以及介于双异质结构的有源层和具有高Zn浓度的p型层之间的Zn扩散防止层 。
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公开(公告)号：US5332920A
公开(公告)日：1994-07-26
申请号：US850964
申请日：1992-03-11
IPC分类号： H01L21/761 , H01L21/762 , H01L21/763 , H01L27/088 , H01L27/12 , H01L29/739 , H01L29/70
CPC分类号： H01L21/76264 , H01L21/761 , H01L21/76297 , H01L21/763 , H01L27/088 , H01L27/1203 , H01L29/7394 , H01L21/76275 , H01L21/76283 , H01L21/76286 , H01L2924/10158
摘要： A dielectric isolation substrate comprises a first semiconductor wafer, a second semiconductor wafer bonded on the first semiconductor wafer with a first insulating layer interposed therebetween, a semiconductor layer formed on the second semiconductor wafer, a first groove formed in the semiconductor layer and the second semiconductor wafer so as to reach the first insulating layer, thereby isolating the semiconductor layer and the second semiconductor wafer, and a second insulating layer formed on the side face of the first groove or embedded in the first groove. In this dielectric isolation substrate, a high breakdown voltage element and a low breakdown voltage element are formed in a region isolated by the first groove.
摘要翻译： 绝缘隔离衬底包括：第一半导体晶片;第二半导体晶片，其在第一半导体晶片上具有第一绝缘层，第二绝缘层插入在第二半导体晶片之间，形成在第二半导体晶片上的半导体层，形成在半导体层中的第一沟槽和第二半导体层 晶片，以便到达第一绝缘层，从而隔离半导体层和第二半导体晶片，以及形成在第一凹槽的侧面上或嵌入在第一凹槽中的第二绝缘层。 在该绝缘隔离衬底中，在由第一沟槽隔离的区域中形成高击穿电压元件和低击穿电压元件。
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5.发明申请公开(公告)号：US20110078458A1
公开(公告)日：2011-03-31
申请号：US12885886
申请日：2010-09-20
IPC分类号： G06F12/14
CPC分类号： G06F21/64
摘要： A contents processing device includes a management data storage unit to store an updater identifier and a private key, an accepting unit to accept a content which is divided into a plurality of blocks, an updating type indicating a type of an updating as to the content, an updated block to be updated of the content, and an updated position, an inserting unit to generate an updated content by inserting the updating block into the updated position of the content, a first hash value calculating unit to calculate a hash value as to the updated block, a signature unit to read out the updater identifier and the private key from the management data storage unit to generate a digital signature using the private key as to updating record information including the updater identifier, the updated position, the hash value as to the updated block, and the updating type.
摘要翻译： 内容处理装置包括：管理数据存储单元，用于存储更新器标识符和私钥;接受单元，接受被划分为多个块的内容;指示关于内容的更新类型的更新类型; 要更新的内容的更新的块和更新的位置，通过将更新块插入到内容的更新位置来生成更新的内容的插入单元，第一哈希值计算单元，用于计算关于内容的哈希值 更新块，签名单元，用于从管理数据存储单元读出更新器标识符和专用密钥，以使用专用密钥生成数字签名，以更新包括更新器标识符，更新位置，散列值的记录信息， 更新的块和更新类型。
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6.发明申请公开(公告)号：US20110073890A1
公开(公告)日：2011-03-31
申请号：US12726452
申请日：2010-03-18
IPC分类号： H01L33/44
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： A method for manufacturing a semiconductor light-emitting device of the invention includes: forming a semiconductor layer including a light-emitting layer and a first interconnect layer on a major surface of a temporary substrate; dividing the semiconductor layer and the first interconnect layer into a plurality of chips by a trench; collectively bonding each divided portion of the first interconnect layer of a plurality of chips to be bonded not adjacent to each other out of the plurality of chips on the temporary substrate to a second interconnect layer while opposing the major surface of the temporary substrate and the major surface of a supporting substrate forming the second interconnect layer, and collectively transferring a plurality of the bonded chips from the temporary substrate to the supporting substrate after irradiating interfaces between the bonded chips and the temporary substrate and separating the chips and the temporary substrate from each other.
摘要翻译： 本发明的半导体发光元件的制造方法包括：在临时衬底的主表面上形成包括发光层和第一互连层的半导体层; 通过沟槽将半导体层和第一互连层分成多个芯片; 将临时衬底上的多个芯片中彼此不相邻的多个芯片的每个分割部分的每个分割部分连接到第二互连层，同时与临时衬底的主表面和主要衬底相对 形成第二互连层的支撑基板的表面，并且在照射接合的芯片和临时基板之间的界面照射之后，将多个接合的芯片从临时基板共同转移到支撑基板，并将芯片和临时基板彼此分离 。
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公开(公告)号：US20100167098A1
公开(公告)日：2010-07-01
申请号：US12645605
申请日：2009-12-23
IPC分类号： H01M8/04
CPC分类号： H01M8/04746 , H01M8/04067 , H01M8/04186 , H01M8/04201 , H01M8/0432 , H01M8/04388 , H01M8/04395 , H01M8/04402 , H01M8/0441 , H01M8/04447 , H01M8/04559 , H01M8/04679 , H01M8/04955
摘要： A fuel cell system prevents leakage of aqueous fuel solution to the cathode while reducing catalyst deterioration in the fuel cell. The fuel cell system includes a fuel cell including an anode and a cathode. An aqueous solution pump supplies the anode with aqueous methanol solution whereas an air pump supplies the cathode with air. Where there is an abnormality in the fuel cell, a CPU stops operation of the aqueous solution pump, and thereafter stops operation of the air pump when a temperature of the fuel cell detected by a cell stack temperature sensor is not higher than a predetermined value. When starting the fuel cell system with an abnormality existing in the fuel cell, the CPU drives the air pump and thereafter drives the aqueous solution pump.
摘要翻译： 燃料电池系统防止水性燃料溶液泄漏到阴极，同时减少燃料电池中的催化剂劣化。 燃料电池系统包括具有阳极和阴极的燃料电池。 水溶液泵向阳极供应甲醇水溶液，而空气泵向空气供应阴极。 在燃料电池发生异常的情况下，CPU停止水溶液泵的动作，在电池堆温度传感器检测出的燃料电池的温度不高于规定值的情况下停止气泵的动作。 当燃料电池中存在异常的燃料电池系统启动时，CPU驱动空气泵，然后驱动水溶液泵。
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公开(公告)号：US20100031055A1
公开(公告)日：2010-02-04
申请号：US12560222
申请日：2009-09-15
CPC分类号： G06F7/723 , G06F7/728 , G06F2207/7271 , H04L9/004 , H04L9/302 , H04L9/3066
摘要： A cryptographic processing device, comprising: a storage unit; initial setting unit for setting a value to be stored in the storage unit; Montgomery modular multiplication operation unit for performing a Montgomery modular multiplication operation plural times for a value set by the initial setting unit; and fault attack detection unit for determining whether or not a fault attack occurred for each of at least some parts of the Montgomery modular multiplication operations performed plural times.
摘要翻译： 一种加密处理装置，包括：存储单元; 初始设定单元，用于设定存储在存储单元中的值; 蒙哥马利乘法运算单元，用于对由初始设定单元设定的值进行多次蒙哥马利乘法运算; 以及故障攻击检测单元，用于确定多次执行的蒙哥马利乘法运算的至少一些部分中是否发生故障攻击。
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9.发明申请公开(公告)号：US20100023571A1
公开(公告)日：2010-01-28
申请号：US12218060
申请日：2008-07-11
IPC分类号： G06F7/38
CPC分类号： G06F7/728
摘要： REDC (A*B) is calculated for the values A and B by using a Montgomery's algorithm REDC. The part related to the A*B is performed by the three-input two-output product-sum calculation circuit. One digit ai of the value A, one digit bj of the value B and a carry value c1 are input to the product-sum calculation circuit, and ai*bj+c1 is calculated thereat. The higher-order digit of the r-adic two-digit of the calculation result is used as the carry value c1, and the lower digit is used for a later calculation. Further, one digit ni of a modulo N for the REDC, a predetermined value m and a carry value c2 are input into the product-sum calculation circuit, and n*ni+c2 is calculated thereat. The higher-order digit is used as the carry value c2, and the lower digit is used for a later calculation.
摘要翻译： 通过使用蒙哥马利的算法REDC计算值A和B的REDC（A * B）。 与A * B相关的部分由三输入双输出积和计算电路进行。 值A的一位数ai，值B的一位数bj和进位值c1被输入到乘积和计算电路，并且计算ai * bj + c1。 将计算结果的r-adic两位数的高阶数字用作进位值c1，将下位数用于后续计算。 此外，对于REDC，模N的一位数ni，预定值m和进位值c2被输入到乘积和计算电路中，并且在那里计算n * ni + c2。 高位数字用作进位值c2，下位数用于后续计算。
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公开(公告)号：US20080308827A1
公开(公告)日：2008-12-18
申请号：US12042561
申请日：2008-03-05
CPC分类号： H01L33/0079 , H01L21/187 , H01L24/05 , H01L33/10 , H01L33/16 , H01L33/20 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/351 , H01L2924/00
摘要： The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula Inx(Ga1-yAly)1-xP on a GaAs substrate 12 to form an epi-wafer having an n-type cladding layer 14 (0.45≦x≦0.50, 0≦y≦1), an active layer 15, a p-type cladding layer 16 and a cover layer 17; a step of removing the cover layer 17 by etching to expose the surface of the p-type cladding layer 16; a step of integrally joining a mirror-finished GaP substrate 11 on the p-type cladding layer 16 by placing the GaP substrate on the cladding layer at room temperature so that the mirror-finished surface of the GaP substrate may come into contact with the p-type cladding layer 16; a step of subjecting the resultant laminate to a heat treatment; a step of carrying out an etching treatment from the side of the GaAs substrate 12 to expose the n-type cladding layer 14; and a step of forming electrodes 19 on the surface of the n-type cladding layer 14 and on the back surface of the GaP substrate 11, respectively.
摘要翻译： 该方法包括在GaAs衬底12上生长由组成式Inx（Ga1-yAly）1-xP表示的化合物半导体的外延混合晶体以形成具有n型包覆层14（0.45μm）的外延晶片的步骤， = x <= 0.50,0 <= y <= 1），有源层15，p型覆层16和覆盖层17; 通过蚀刻去除覆盖层17以露出p型覆层16的表面的步骤; 通过在室温下将GaP衬底放置在包覆层上，使GaP衬底的镜面精加工表面与p型覆层16接触， 型包覆层16; 对所得到的层压体进行热处理的工序; 从GaAs衬底12侧进行蚀刻处理以暴露n型包覆层14的步骤; 以及分别在n型包覆层14的表面和GaP基板11的背面上形成电极19的工序。
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