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公开(公告)号：US20140367702A1
公开(公告)日：2014-12-18
申请号：US14370803
申请日：2012-07-25
申请人： Kei Yamamoto , Kazuhiro Tada , Hideki Komori , Toru Kimura , Masaki Goto , Hiroyuki Yoshihara
发明人： Kei Yamamoto , Kazuhiro Tada , Hideki Komori , Toru Kimura , Masaki Goto , Hiroyuki Yoshihara
CPC分类号： H01L23/3672 , H01L21/4871 , H01L21/4882 , H01L21/56 , H01L21/565 , H01L23/3107 , H01L23/3735 , H01L23/4334 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： An object is to provide a fin integrated type semiconductor device and a method of manufacturing the same, which are provided with a simple structure and good heat dissipation characteristics. The semiconductor device includes: a base plate on which fins arranged in a standing condition are formed on a first main face; an insulating layer formed on a second main face of the base plate, the second main face being opposite to the first main face of the base plate; a circuit pattern fixed to the insulating layer; and a semiconductor element joined to the circuit pattern. The fins are formed with slits that pass through in the thickness direction of the fins.
摘要翻译： 目的在于提供一种鳍状集成型半导体器件及其制造方法，其具有简单的结构和良好的散热特性。 半导体器件包括：在第一主面上形成有以直立状态排列的翅片的基板; 绝缘层，形成在所述基板的第二主面上，所述第二主面与所述基板的所述第一主面相对; 固定到所述绝缘层的电路图案; 以及连接到电路图案的半导体元件。 翅片形成有沿翅片的厚度方向穿过的狭缝。
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公开(公告)号：US09390995B2
公开(公告)日：2016-07-12
申请号：US14370803
申请日：2012-07-25
申请人： Kei Yamamoto , Kazuhiro Tada , Hideki Komori , Toru Kimura , Masaki Goto , Hiroyuki Yoshihara
发明人： Kei Yamamoto , Kazuhiro Tada , Hideki Komori , Toru Kimura , Masaki Goto , Hiroyuki Yoshihara
IPC分类号： H01L23/367 , H01L23/34 , B23P15/26 , H01L23/433 , H01L21/48 , H01L23/31 , H01L21/56 , H01L23/373 , H01L29/16 , H01L29/20
CPC分类号： H01L23/3672 , H01L21/4871 , H01L21/4882 , H01L21/56 , H01L21/565 , H01L23/3107 , H01L23/3735 , H01L23/4334 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： An object is to provide a fin integrated type semiconductor device and a method of manufacturing the same, which are provided with a simple structure and good heat dissipation characteristics. The semiconductor device includes: a base plate on which fins arranged in a standing condition are formed on a first main face; an insulating layer formed on a second main face of the base plate, the second main face being opposite to the first main face of the base plate; a circuit pattern fixed to the insulating layer; and a semiconductor element joined to the circuit pattern. The fins are formed with slits that pass through in the thickness direction of the fins.
摘要翻译： 目的在于提供一种鳍状集成型半导体器件及其制造方法，其具有简单的结构和良好的散热特性。 半导体器件包括：在第一主面上形成有以直立状态排列的翅片的基板; 绝缘层，形成在所述基板的第二主面上，所述第二主面与所述基板的所述第一主面相对; 固定到所述绝缘层的电路图案; 以及连接到电路图案的半导体元件。 翅片形成有沿翅片的厚度方向穿过的狭缝。
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公开(公告)号：US08193633B2
公开(公告)日：2012-06-05
申请号：US12675549
申请日：2008-09-12
申请人： Kenji Mimura , Hideki Takigawa , Hiroki Shiota , Kazuhiro Tada , Takashi Nishimura , Hiromi Ito , Seiki Hiramatsu , Atsuko Fujino , Kei Yamamoto , Motoki Masaki
发明人： Kenji Mimura , Hideki Takigawa , Hiroki Shiota , Kazuhiro Tada , Takashi Nishimura , Hiromi Ito , Seiki Hiramatsu , Atsuko Fujino , Kei Yamamoto , Motoki Masaki
CPC分类号： H01L23/3737 , F28F2013/006 , H01L23/4334 , H01L23/49568 , H01L23/49575 , H01L24/29 , H01L24/45 , H01L24/48 , H01L2224/2929 , H01L2224/29386 , H01L2224/29499 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48257 , H01L2924/01019 , H01L2924/181 , Y10T29/4935 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Provided is a heat conductive sheet obtained by dispersing an inorganic filler in a thermosetting resin, in which the inorganic filler contains secondary aggregation particles formed by isotropically aggregating scaly boron nitride primary particles having an average length of 15 μm or less, and the inorganic filler contains more than 20 vol % of the secondary aggregation particles each having a particle diameter of 50 μm or more. The heat conductive sheet is advantageous in terms of productivity and cost and excellent in heat conductivity and electrical insulating properties.
摘要翻译： 提供了一种通过将无机填料分散在热固性树脂中而获得的导热片，其中无机填料含有通过各向同性地聚集平均长度为15μm以下的鳞片状氮化硼一次粒子形成的二次凝集粒子，无机填料含有 大于20体积％的二次聚集粒子各自具有50μm以上的粒径。 导热片在生产率和成本方面是有利的，并且导热性和电绝缘性能优异。
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4.发明授权公开(公告)号：US09320173B2
公开(公告)日：2016-04-19
申请号：US14374363
申请日：2013-02-18
申请人： Kei Yamamoto , Kazuhiro Tada
发明人： Kei Yamamoto , Kazuhiro Tada
IPC分类号： H01L23/00 , H01L21/56 , H05K7/20 , H01L23/31 , H01L23/367 , H01L23/433 , H01L23/495 , H01L25/07
CPC分类号： H05K7/20409 , H01L21/56 , H01L21/565 , H01L23/3107 , H01L23/367 , H01L23/4334 , H01L23/49568 , H01L24/83 , H01L25/072 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/83951 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device includes a base plate having a first major plane and a second major plane opposite to each other, and having a plurality of fins held upright on the first major plane and a bulge portion formed on the first major plane to encircle the plurality of fins, an insulation layer formed on the second major plane of the base plate, a circuit pattern fixed to the insulation layer, a semiconductor element connected to the circuit pattern, and a sealing resin sealing the insulation layer, the circuit pattern, and the semiconductor element. The bulge portion formed on the first major plane continuously encircles the plurality of fins, the bulge portion has a widthwise margin on an outer peripheral edge of the base plate, and the sealing resin covers an outer peripheral side face of the bulge portion and the widthwise margin.
摘要翻译： 一种半导体器件包括具有第一主平面和相互相对的第二主平面的基板，并且具有在第一主平面上竖直放置的多个翅片和形成在第一主平面上的凸起部分以包围多个 翅片，形成在基板的第二主平面上的绝缘层，固定到绝缘层的电路图案，连接到电路图案的半导体元件以及密封绝缘层，电路图案和半导体的密封树脂 元件。 形成在第一主平面上的凸起部连续地包围多个翅片，凸起部在基板的外周边缘上具有宽度方向的边缘，密封树脂覆盖凸部的外周侧面，宽度方向 保证金
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公开(公告)号：US20100226095A1
公开(公告)日：2010-09-09
申请号：US12675549
申请日：2008-09-12
申请人： Kenji Mimura , Hideki Takigawa , Hiroki Shiota , Kazuhiro Tada , Takashi Nishimura , Hiromi Ito , Seiki Hiramatsu , Atsuko Fujino , Kei Yamamoto , Motoki Masaki
发明人： Kenji Mimura , Hideki Takigawa , Hiroki Shiota , Kazuhiro Tada , Takashi Nishimura , Hiromi Ito , Seiki Hiramatsu , Atsuko Fujino , Kei Yamamoto , Motoki Masaki
CPC分类号： H01L23/3737 , F28F2013/006 , H01L23/4334 , H01L23/49568 , H01L23/49575 , H01L24/29 , H01L24/45 , H01L24/48 , H01L2224/2929 , H01L2224/29386 , H01L2224/29499 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48257 , H01L2924/01019 , H01L2924/181 , Y10T29/4935 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Provided is a heat conductive sheet obtained by dispersing an inorganic filler in a thermosetting resin, in which the inorganic filler contains secondary aggregation particles formed by isotropically aggregating scaly boron nitride primary particles having an average length of 15 μm or less, and the inorganic filler contains more than 20 vol % of the secondary aggregation particles each having a particle diameter of 50 μm or more. The heat conductive sheet is advantageous in terms of productivity and cost and excellent in heat conductivity and electrical insulating properties.
摘要翻译： 提供了一种通过将无机填料分散在热固性树脂中而获得的导热片，其中无机填料含有通过各向同性地聚集平均长度为15μm以下的鳞片状氮化硼一次粒子形成的二次凝集粒子，无机填料含有 大于20体积％的二次聚集粒子各自具有50μm以上的粒径。 导热片在生产率和成本方面是有利的，并且导热性和电绝缘性能优异。
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公开(公告)号：US20150016064A1
公开(公告)日：2015-01-15
申请号：US14374363
申请日：2013-02-18
申请人： Kei Yamamoto , Kazuhiro Tada
发明人： Kei Yamamoto , Kazuhiro Tada
CPC分类号： H05K7/20409 , H01L21/56 , H01L21/565 , H01L23/3107 , H01L23/367 , H01L23/4334 , H01L23/49568 , H01L24/83 , H01L25/072 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/83951 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： The purpose is to provide a fin-integrated type semiconductor device that is a simple structure and has a high heat dissipating characteristic, and to provide a manufacturing method therefor. The semiconductor device includes a base plate having a first major plane and a second major plane opposite to each other, and having a plurality of fins held upright on the first plane and a bulge portion formed thereon to encircle the plurality of fins; an insulation layer formed on the second major plane of the base plate; a circuit pattern fixed to the insulation layer; a semiconductor element connected to the circuit pattern; and a sealing resin sealing the insulation layer, the circuit pattern, and the semiconductor element. The bulge portion formed on the first major plane continuously encircles the plurality of fins.
摘要翻译： 其目的是提供一种结构简单且散热特性高的翅片一体化型半导体器件，并提供其制造方法。 半导体器件包括具有彼此相对的第一主平面和第二主平面的基板，并且具有在第一平面上竖直地保持的多个翅片和形成在其上的凸起部分以环绕多个翅片; 形成在基板的第二主平面上的绝缘层; 固定到绝缘层的电路图案; 连接到电路图案的半导体元件; 以及密封绝缘层，电路图案和半导体元件的密封树脂。 形成在第一主平面上的凸起部连续地包围多个翅片。
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7.发明申请公开(公告)号：US20120039045A1
公开(公告)日：2012-02-16
申请号：US13265446
申请日：2010-04-01
申请人： Xiaohong Yin , Takashi Nishimura , Kei Yamamoto , Kazuhiro Tada , Tatsuya Okuda , Takeshi Oi
发明人： Xiaohong Yin , Takashi Nishimura , Kei Yamamoto , Kazuhiro Tada , Tatsuya Okuda , Takeshi Oi
IPC分类号： H05K7/20
CPC分类号： G01R31/129 , H01L25/072 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/01004 , H01L2924/01077 , H01L2924/01087 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A method and device for detecting insulation degradation of a power module, which detects, in advance, degradation of an insulating sheet based on a current change immediately before breakdown of an insulation characteristic from a current value of a current flowing through the insulating sheet, thereby detecting a failure of a power module caused by the degradation of insulation. The device includes: a current detector sampling and detecting a current value of a current flowing through an insulating sheet of the power module at a predetermined time interval; a calculator determining, based on the current value, a state in which the insulation characteristic of the insulating sheet is so degraded that the breakdown is imminent, and outputting a degradation determination result of YES when it is determined that the insulating sheet is in the state immediately before the breakdown; a current storage storing a current value i(n−1) at a previous sampling time point; and an alarm generating an alarm in response to the degradation determination result of YES. The calculator outputs the degradation determination result of YES when a present current value in exceeds ten times the previous current value i(n−1).
摘要翻译： 一种用于检测功率模块的绝缘劣化的方法和装置，其预先根据绝缘特性从流过绝缘片的电流的当前值立即根据电流变化检测绝缘片，从而 检测由绝缘劣化引起的电源模块的故障。 该装置包括：电流检测器，以预定的时间间隔对流过功率模块的绝缘片的电流的电流值进行采样和检测; 基于当前值，计算器确定绝缘片的绝缘特性劣化的状态，使得击穿即将发生，并且当确定绝缘片处于该状态时，输出劣化判定结果为“是” 紧急故障前; 存储在先前采样时间点的当前值i（n-1）的当前存储器; 以及响应于劣化判定结果为“是”而产生警报的报警。 当当前值超过前一个当前值i（n-1）的十倍时，计算器输出劣化判定结果为“是”。
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公开(公告)号：US20120286292A1
公开(公告)日：2012-11-15
申请号：US13521586
申请日：2011-01-12
申请人： Yasushi Nakayama , Takayoshi Miki , Takeshi Oi , Kazuhiro Tada , Shiori Idaka , Shigeru Hasegawa , Takeshi Tanaka
发明人： Yasushi Nakayama , Takayoshi Miki , Takeshi Oi , Kazuhiro Tada , Shiori Idaka , Shigeru Hasegawa , Takeshi Tanaka
CPC分类号： H01L25/18 , H01L23/24 , H01L23/3135 , H01L23/3735 , H01L24/48 , H01L24/49 , H01L25/072 , H01L29/1608 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01004 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/12031 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15311 , H01L2924/19107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.
摘要翻译： 可以抑制由Si半导体构成的开关元件的温度上升的功率半导体模块，并且可以提高冷却模块的效率。 为此，功率半导体模块包括由Si半导体制成的开关元件和由宽带隙半导体制成的二极管，二极管被布置在功率半导体模块的中间区域中，并且开关元件布置在两侧或 在功率半导体模块的中间区域的外围。
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公开(公告)号：US4904793A
公开(公告)日：1990-02-27
申请号：US95833
申请日：1987-09-14
申请人： Takaharu Ikeda , Kazuhiro Tada
发明人： Takaharu Ikeda , Kazuhiro Tada
IPC分类号： C07D249/08 , C07D521/00
CPC分类号： C07D231/12 , C07D233/56 , C07D249/08
摘要： A triazole compound of the formula: ##STR1## wherein X is a hydrogen atom or a chlorine atom, which can be produced by subjecting an aromatic aldehyde of the formula: ##STR2## wherein X is as defined above, an alpha-halopinacolone of the formula: ##STR3## wherein Hal is a chlorine atom or a bromine atom and 1,2,4-triazole to condensation in the presence of an alkali, is useful as an intermediate in the synthesis of anti-microbial triazole-alcohols with high purity and high yield.
摘要翻译： 下式的三唑化合物：其中X是氢原子或氯原子，其可以通过使下式的芳族醛进行制备：其中X如上定义，其中X如上定义，α-卤代新戊酸钠 式：其中Hal是氯原子或溴原子和1,2,4-三唑在碱存在下缩合，可用作合成具有高纯度的抗微生物三唑醇的中间体 产量高。
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公开(公告)号：US09129885B2
公开(公告)日：2015-09-08
申请号：US13521586
申请日：2011-01-12
申请人： Yasushi Nakayama , Takayoshi Miki , Takeshi Oi , Kazuhiro Tada , Shiori Idaka , Shigeru Hasegawa , Takeshi Tanaka
发明人： Yasushi Nakayama , Takayoshi Miki , Takeshi Oi , Kazuhiro Tada , Shiori Idaka , Shigeru Hasegawa , Takeshi Tanaka
IPC分类号： H01L29/24 , H01L25/18 , H01L23/24 , H01L23/31 , H01L23/373 , H01L25/07 , H01L29/16 , H01L23/00
CPC分类号： H01L25/18 , H01L23/24 , H01L23/3135 , H01L23/3735 , H01L24/48 , H01L24/49 , H01L25/072 , H01L29/1608 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01004 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/12031 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15311 , H01L2924/19107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.
摘要翻译： 可以抑制由Si半导体构成的开关元件的温度上升的功率半导体模块，并且可以提高冷却模块的效率。 为此，功率半导体模块包括由Si半导体制成的开关元件和由宽带隙半导体制成的二极管，二极管被布置在功率半导体模块的中间区域中，并且开关元件布置在两侧或 在功率半导体模块的中间区域的外围。
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