Abstract:
Microelectronic imagers and methods of manufacturing such microelectronic imagers are disclosed. In one embodiment, a method for manufacturing a microelectronic imager can include irradiating selected portions of an imager housing unit. The housing unit includes a body having lead-in surfaces and a support surface that define a recess sized to receive a microelectronic die. The method also includes depositing a conductive material onto the irradiated portions of the housing unit and forming electrically conductive traces. The method further includes coupling a plurality of terminals at a front side of a microelectronic die to corresponding electrically conductive traces in the recess in a flip-chip configuration. The microelectronic die includes an image sensor aligned with at least a portion of an optical element carried by the housing unit and at least partially aligned with the recess. The method can then include depositing an encapsulant into the recess and over at least a portion of the microelectronic die.
Abstract:
Systems and methods for packaging integrated circuit chips in castellation wafer level packaging are provided. The active circuit areas of the chips are coupled to castellation blocks and, depending on the embodiment, input/output pads. The castellation blocks and input/output pads are encapsulated and held in place by an encapsulant. When the devices are being fabricated, the castellation blocks and input/output pads are sawed through. If necessary, the wafer portion on which the devices are fabricated may be thinned. The packages may be used as a leadless chip carrier package or may be stacked on top of one another. When stacked, the respective contacts of the packages are preferably coupled. Data may be written to, and received from, packaged chips when a chip is activated. Chips may be activated by applying the appropriate signal or signals to the appropriate contact or contacts.
Abstract:
A semiconductor device package is disclosed which is substantially die-sized with respect to each of the X, Y and Z axes. The package includes outer connectors that are located along at least one peripheral edge thereof and that extend substantially across the height of the peripheral edge. Each outer connector is formed by severing a conductive via that extends substantially through a substrate blank, such as a silicon wafer, at a street located adjacent to an outer periphery of the semiconductor device of the package. The outer connectors may include recesses that at least partially receive conductive columns protruding from a support substrate therefor. Assemblies may include the packages in stacked arrangement, without height-adding connectors.
Abstract:
A stackable semiconductor package includes a semiconductor die, and has a chip sized peripheral outline matching that of the die. In addition to the die, the package includes stacking pads and stacking contacts on opposing sides of the die, and conductive grooves on the edges of the die in electrical communication with the stacking pads and the stacking contacts. The conductive grooves function as interlevel conductors for the package and can also function as edge contacts for the package. The configuration of the stacking pads, of the stacking contacts and of the conductive grooves permit multiple packages to be stacked and electrically interconnected to form stacked assemblies. A method for fabricating the package is performed at the wafer level on a substrate, such as a semiconductor wafer, containing multiple dice. In addition, multiple substrates can be stacked, bonded and singulated to form stacked assemblies that include multiple stacked packages.
Abstract:
Methods for forming an edge contact on a die and edge contact structures are described. The edge contacts on the die do not increase the height of the die. The edge contacts are positioned on the periphery of a die. The edge contacts are positioned in the saw streets. Each edge contact is connected to one bond pad of each die adjacent the saw street. The edge contact is divided into contacts for each adjacent die when the dies are separated. In an embodiment, a recess is formed in the saw street. In an embodiment, the recess is formed by scribing the saw street with a mechanical cutter. The recess is patterned and contact material is deposited to form the edge contacts.
Abstract:
Through vias in a substrate are formed by creating a trench in a top side of the substrate and at least one trench in the back side of the substrate. The sum of the depths of the trenches at least equals the height of the substrate. The trenches cross at intersections, which accordingly form the through vias from the top side to the back side. The through vias are filled with a conductor to form contacts on both sides and the edge of the substrate. Contacts on the backside are formed at each of the trench. The through vias from the edge contacts. Traces connect bond pads to the conductor in the through via. Some traces are parallel to the back side traces. Some traces are skew to the back side traces. The substrate is diced to form individual die.
Abstract:
Systems and methods for packaging integrated circuit chips in castellation wafer level packaging are provided. The active circuit areas of the chips are coupled to castellation blocks and, depending on the embodiment, input/output pads. The castellation blocks and input/output pads are encapsulated and held in place by an encapsulant. When the devices are being fabricated, the castellation blocks and input/output pads are sawed through. If necessary, the wafer portion on which the devices are fabricated may be thinned. The packages may be used as a leadless chip carrier package or may be stacked on top of one another. When stacked, the respective contacts of the packages are preferably coupled. Data may be written to, and received from, packaged chips when a chip is activated. Chips may be activated by applying the appropriate signal or signals to the appropriate contact or contacts.
Abstract:
Methods for forming an edge contact on a die and edge contact structures are described. The edge contacts on the die do not increase the height of the die. The edge contacts are positioned on the periphery of a die. The edge contacts are positioned in the saw streets. Each edge contact is connected to one bond pad of each die adjacent the saw street. The edge contact is divided into contacts for each adjacent die when the dies are separated. In an embodiment, a recess is formed in the saw street. In an embodiment, the recess is formed by scribing the saw street with a mechanical cutter. The recess is patterned and contact material is deposited to form the edge contacts.
Abstract:
Systems and methods for packaging integrated circuit chips in castellation wafer level packaging are provided. The active circuit areas of the chips are coupled to castellation blocks and, depending on the embodiment, input/output pads. The castellation blocks and input/output pads are encapsulated and held in place by an encapsulant. When the devices are being fabricated, the castellation blocks and input/output pads are sawed through. If necessary, the wafer portion on which the devices are fabricated may be thinned. The packages may be used as a leadless chip carrier package or may be stacked on top of one another. When stacked, the respective contacts of the packages are preferably coupled. Data may be written to, and received from, packaged chips when a chip is activated. Chips may be activated by applying the appropriate signal or signals to the appropriate contact or contacts.
Abstract:
A support structure for a semiconductor device with peripherally disposed contacts includes a support substrate and at least one conductive column protruding from the support substrate. The at least one conductive column is configured to contact an outer connector on a peripheral edge of a semiconductor device that may be carried by the support structure. Optionally, the at least one conductive column may engage a feature of (e.g., a recess in) the peripherally disposed outer connector. The at least one conductive column may facilitate alignment of one or more semiconductor devices with the support substrate alignment of semiconductor devices relative to one another, or electrical connection between multiple semiconductor devices of other components.