Abstract:
A multi-threshold integrated circuit (IC) with reduced subthreshold leakage and method of reducing leakage. Selectable supply switching devices (NFETs and/or PFETs) between a logic circuit and supply connections (Vdd and Ground) for the circuit have higher thresholds than normal circuit devices. Some devices may have thresholds lowered when the supply switching devices are on. Header/footer devices with further higher threshold voltages and widths may be used to further increase off resistance and maintain/reduce on resistance. Alternatively, high threshold devices may be stacked to further reduce leakage to a point achieved for an even higher threshold. Intermediate supply connects at the devices may have decoupling capacitance and devices may be tapered for optimum stack height and an optimum taper ratio to minimize circuit leakage and circuit delay.
Abstract:
An interface between synchronous and asynchronous data transfer includes a plurality of stages coupled to each other to form a pipeline for data transfer. The plurality of stages include a first stage which performs synchronous to asynchronous data transfer, at least one intermediate stage which performs asynchronous to asynchronous data transfer and a last stage which performs asynchronous to synchronous data transfer. A synchronous clock path propagates a timing signal across the plurality of stages to enable the first and last stages to perform operations when the timing signal is present at that stage.
Abstract:
A method is provided for associating an address with data. The method includes precharging a matchline connected to a plurality of tag match functions to a first potential, wherein each tag match function comprises one or more match logic devices, discharging two tag lines for a first tag bit to ground, and reading a plurality of tag bits and corresponding data bits onto a plurality of tag lines and a plurality of data lines respectively. The method further includes determining a match between the tag bits and data bits, and pulling the matchline to a second potential upon determining a match for each of the tag bits.
Abstract:
A method is provided for selecting a participant to issue. The method includes signaling a domino OR gate arbitration device upon a ready request of a participant having a priority, determining within the domino OR gate arbitration device the relative priority of the participant, signaling the domino OR gate arbitration device through an any-request device upon the ready request of a higher priority participant, and issuing the higher priority participant upon determining the higher priority participant to have a priority highest among participants ready for issue. The method includes gating one of a precharge signal and an evaluate signal of the precharged domino OR gate arbitration device by the ready request of the participant. The method further includes latching a result of the domino OR gate arbitration device and a clock signal, and gating the clock signal by the ready signal of the participant.
Abstract:
An ECL circuit (12) for directly coupling to and from a CMOS circuit (10). The ECL circuit has an input node for receiving an input signal generated by a CMOS circuit. The input signal swings, or transitions, between a first potential (V.sub.0) and a second potential (V.sub.1). The ECL circuit further includes ECL core circuitry (Q.sub.3, Q.sub.4, R.sub.L), coupled to the input node and responsive the received signal, for generating an intermediate electrical signal that swings between a third potential (V.sub.2) and a fourth potential (V.sub.3) that is approximately two times (V.sub.1 -V.sub.0). The ECL circuit further includes an output driver circuit for coupling to an input of a CMOS circuit or to another ECL circuit. The output driver circuit has an input node coupled to an output of the ECL core circuitry and includes emitter followers (EF.sub.1, EF.sub.2) for generating, in response to the intermediate electrical signal swinging between V.sub.2 and V.sub.3, a first output signal tha swings between the V.sub.0 and V.sub.1.
Abstract:
Complex logical mechanism, for simultaneously producing output signals related logically to a set of input signals, implemented in transfer gate pairs. The first transfer gate of each pair is connected generally in series and is controlled by conduction according to the signals applied. The second transfer gate of each pair shunts the output node of its related first transfer gate to ground, when enabled by a control signal complementary to the data pattern applied to the first transfer gate of the pair. This direct control of line voltages affirmatively drives the lines or affirmatively grounds the lines to eliminate back circuits.Carry propagation to higher order bit positions is along carry propagate lines, with series connected carry propagate first transfer gates. Order positions not having data values appropriate for carry propagation do not transmit carry values--these transfer gates are not controlled for conduction, but are nonetheless subject to possible back circuits. Carry propagate negation second transfer gates, connected in respective pairs with the carry propagate first transfer gates, are controlled by signals complementary to the control signals for the respectively carry propagate transfer gates, and, when enabled, connect the output nodes of the respective carry propagate first transfer gates directly to ground reference potential.
Abstract:
An integrated circuit including a pipeline and a method of operating the pipeline. Each stage of the pipeline is triggered by one or more triggering events and are individually, and selectively, stalled by a stall signal. For each stage a stall signal, delayed with respect to the stall signal of a downstream stage, is generated and used to select whether the pipeline stage in question is triggered. A data valid signal propagating with valid data adds further selection, such that only stages with valid data are stalled.
Abstract:
An integrated circuit (IC) including unit power control, leakage reduction circuit for controllably reducing leakage power with reduced LdI/dt noise in the IC and, an activity prediction unit invoking active/dormant states in IC units. The prediction unit determines turn on and turn off times for each IC unit. The prediction unit controls a supply voltage select circuit selectively passing a supply voltage to a separate supply line at the predicted turn on time and selectively blocking the supply voltage at the predicted turn off time.
Abstract:
A data shifter/rotator which is comprised of two levels of s, where s is an integer >2, way switches. The outputs of the first level are connected to the corresponding inputs of the second level. There are first and second control words, with the first control word controlling the amount of the shift/rotation in the first level, and the second control word controlling the amount of the shift/rotation in the second level. The amount of the shift/rotation is determined by the position of the s way switches in each level, as selected by the respective control words.
Abstract:
An improved field effect transistor circuit adapted to operate at high switching speeds and to avoid hot electron operation of voltage stressed FET bootstrap drivers. The circuit comprises a voltage control means adapted to maintain a simultaneous gate and drain to source voltage of FET devices within a characteristic hot electron operational voltage range. The voltage control means is adapted to reduce FET drain to source voltage by connecting a plurality of FET devices in series to reduce the drain to source voltage drop across each device. The drain to source voltage is further defined by connecting the common nodes of successive series connected devices to a specified voltage source that is less than a characteristic hot electron drain to source voltage. The voltage control means also includes a gate voltage clamping FET that is adapted to hold down the gate of a device when the drain to source voltage of the device rises above a particular hot electron voltage. The voltage control means further comprises a plurality of timing pulses that define particular combinations of gate and drain to source device voltages that are less than characteristic combined hot electron voltages. The voltage control means further includes devices with width to length ratios adapted to provide close voltage tracking between input drain voltages and output source voltages to maintain a minimum drain to source voltage drop. The operation of the hot electron voltage control means is particularly described with respect to embodiments using voltage stressed bootstrap driver FETs to generate on chip clock phases.