公开(公告)号：US09129885B2

公开(公告)日：2015-09-08

申请号：US13521586

申请日：2011-01-12

申请人： Yasushi Nakayama ,  Takayoshi Miki ,  Takeshi Oi ,  Kazuhiro Tada ,  Shiori Idaka ,  Shigeru Hasegawa ,  Takeshi Tanaka

发明人： Yasushi Nakayama ,  Takayoshi Miki ,  Takeshi Oi ,  Kazuhiro Tada ,  Shiori Idaka ,  Shigeru Hasegawa ,  Takeshi Tanaka

IPC分类号： H01L29/24 ,  H01L25/18 ,  H01L23/24 ,  H01L23/31 ,  H01L23/373 ,  H01L25/07 ,  H01L29/16 ,  H01L23/00

CPC分类号： H01L25/18 ,  H01L23/24 ,  H01L23/3135 ,  H01L23/3735 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/1608 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12031 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.

摘要翻译： 可以抑制由Si半导体构成的开关元件的温度上升的功率半导体模块，并且可以提高冷却模块的效率。 为此，功率半导体模块包括由Si半导体制成的开关元件和由宽带隙半导体制成的二极管，二极管被布置在功率半导体模块的中间区域中，并且开关元件布置在两侧或 在功率半导体模块的中间区域的外围。

公开(公告)号：US08861235B2

公开(公告)日：2014-10-14

申请号：US13382707

申请日：2010-05-07

申请人： Satoshi Azuma ,  Takeshi Oi ,  Akihiko Iwata

发明人： Satoshi Azuma ,  Takeshi Oi ,  Akihiko Iwata

IPC分类号： H02M7/48 ,  H02M7/49

CPC分类号： H02M7/49 ,  Y02B70/1483

摘要： A power converting apparatus includes a main inverter having a high-voltage DC power supply that operates at a low frequency employing SiC MOSFETs having a high withstand voltage exceeding 600 V and a sub-inverter having a low-voltage capacitor that operates through high-frequency PWM employing Si MOSFETs having a low withstand voltage. With AC sides of the main inverter and the sub-inverter connected in series, the power converting apparatus outputs AC power having a prescribed voltage waveform by adding voltages individually generated by the main inverter and the sub-inverter. Specifically, the SiC MOSFETs are used only in the main inverter of which devices are required to have a high withstand voltage and the Si MOSFETs are used in the sub-inverter of which devices may have a relatively low withstand voltage, whereby conduction loss is reduced with an inexpensive circuit configuration.

摘要翻译： 电力转换装置包括：主逆变器，其具有使用高耐受电压超过600V的SiC MOSFET的低频工作的高压直流电源以及具有通过高频工作的低压电容器的副逆变器 PWM采用具有低耐受电压的Si MOSFET。 主逆变器和副逆变器的AC侧串联连接，电力转换装置通过加上由主逆变器和副逆变器分别产生的电压，输出具有规定电压波形的交流电力。 具体来说，SiC MOSFET仅用于需要具有高耐压的器件的主逆变器中，并且在其逆变器中使用Si MOSFET，其中器件可能具有相对低的耐受电压，从而降低了传导损耗 具有廉价的电路配置。

公开(公告)号：US20110260315A1

公开(公告)日：2011-10-27

申请号：US13008470

申请日：2011-01-18

申请人： Yoshihiro YAMAGUCHI ,  Seiji Oka ,  Osamu Usui ,  Takeshi Oi

发明人： Yoshihiro YAMAGUCHI ,  Seiji Oka ,  Osamu Usui ,  Takeshi Oi

IPC分类号： H01L23/492 ,  H01L23/02

CPC分类号： H01L24/49 ,  H01L23/3121 ,  H01L24/32 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/4943 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A power block includes an insulating substrate, a conductive pattern formed on the insulating substrate, a power semiconductor chip bonded onto the conductive pattern by lead-free solder, a plurality of electrodes electrically connected to the power semiconductor chip and extending upwardly away from the insulating substrate, and a transfer molding resin covering the conductive pattern, the lead-free solder, the power semiconductor chip, and the plurality of electrodes, wherein surfaces of the plurality of electrodes are exposed at an outer surface of the transfer molding resin and lie in the same plane as the outer surface, the outer surface being located directly above the conductive pattern.

摘要翻译： 功率块包括绝缘衬底，形成在绝缘衬底上的导电图案，通过无铅焊料接合到导电图案上的功率半导体芯片，多个电极，电连接到功率半导体芯片并向上远离绝缘体 基板和覆盖导电图案的传递模塑树脂，无铅焊料，功率半导体芯片和多个电极，其中多个电极的表面在转印模制树脂的外表面处露出，并且位于 与外表面相同的平面，外表面位于导电图案的正上方。

公开(公告)号：US20110089765A1

公开(公告)日：2011-04-21

申请号：US12922859

申请日：2009-03-18

申请人： Akihiko Iwata ,  Takeshi Oi ,  Masato Koyama

发明人： Akihiko Iwata ,  Takeshi Oi ,  Masato Koyama

IPC分类号： H02M7/537 ,  H02J3/00

CPC分类号： H02M7/49 ,  H02M7/501 ,  H02M2001/0077 ,  Y02B70/1483 ,  Y10T307/707

摘要： A power converting apparatus includes a first inverter circuit including a high-voltage first DC voltage source and operated at a low frequency using Si IGBTs having a high withstand voltage exceeding 1000 V and a second inverter circuit including a low-voltage capacitor operated by high-frequency PWM using SiC MOSFETs having a low withstand voltage, wherein an AC side of the first inverter circuit is connected in series to an AC side of the second inverter circuit. The power converting apparatus outputs AC power having a prescribed voltage waveform obtained from the sum of voltages generated by the first and second inverter circuits.

摘要翻译： 电力转换装置包括：第一逆变器电路，包括高电压第一直流电压源，并且使用具有超过1000V的高耐受电压的Si IGBT并且以低频运行的第二逆变器电路;以及包括由高压电容器操作的低压电容器的第二逆变器电路， 使用具有低耐受电压的SiC MOSFET的高频PWM，其中第一反相器电路的AC侧与第二反相器电路的AC侧串联连接。 电力转换装置输出从由第一和第二逆变器电路产生的电压之和获得的具有规定电压波形的AC电力。

公开(公告)号：US07881086B2

公开(公告)日：2011-02-01

申请号：US12293934

申请日：2007-03-08

申请人： Yasushi Nakayama ,  Takeshi Oi ,  Kazuyoshi Toya ,  Akihiro Murahashi

发明人： Yasushi Nakayama ,  Takeshi Oi ,  Kazuyoshi Toya ,  Akihiro Murahashi

IPC分类号： H05K7/20 ,  H02M7/5387 ,  H01B5/00

CPC分类号： H02M7/003 ,  H01L2924/0002 ,  H02M7/487 ,  H01L2924/00

摘要： A power conversion device in which the inductance of a main circuit is reduced, a surge voltage is suppressed, elements are properly cooled, which is miniaturized and reduced in weight as a whole, and is excellent in handling performance in a manufacturing process and a maintenance work. A positive side arm unit includes IGBT modules, a coupling diode module, a cooling plate on which the modules are mounted, and a first laminated bus bar connected to the respective modules. A negative side arm unit includes IGBT modules, a coupling diode module, a cooling plate on which the modules are mounted, and a second laminated bus bar connected to the respective modules, and both the laminated bus bars and the capacitors are connected to one another by a third laminated bus bar. Both the cooling plates are parallel to each other so that the mount surfaces thereof are set in the same direction.

摘要翻译： 一种功率转换装置，其中主电路的电感减小，浪涌电压被抑制，元件被适当地冷却，其整体小型化和重量减轻，并且在制造过程和维护中的处理性能优异 工作。 正侧臂单元包括IGBT模块，耦合二极管模块，其上安装模块的冷却板和连接到各个模块的第一层压母线。 负侧臂单元包括IGBT模块，耦合二极管模块，安装模块的冷却板和连接到各个模块的第二叠层汇流条，并且两个叠层汇流条和电容器彼此连接 通过第三层压母线。 两个冷却板彼此平行，使得其安装表面被设置在相同的方向上。

公开(公告)号：US20100134979A1

公开(公告)日：2010-06-03

申请号：US12540880

申请日：2009-08-13

申请人： Yoshiko Obiraki ,  Seiji Oka ,  Takeshi Oi

发明人： Yoshiko Obiraki ,  Seiji Oka ,  Takeshi Oi

IPC分类号： H05K7/20 ,  H01R9/00

CPC分类号： H01L23/3735 ,  H01L23/4334 ,  H01L23/49811 ,  H01L25/072 ,  H01L25/115 ,  H01L25/16 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power semiconductor apparatus has: plural power semiconductor units, sealed by a transfer mold resin so that insertion holes of conductive tubular sockets in which plural external terminals can be insertion-connected are exposed in one surface thereof and a metal heat dissipation surface is exposed in another surface thereof; and a conductive connecting member having the plural external terminals. The surfaces of the power semiconductor units that have the insertion holes of tubular sockets are arrayed in the same direction in the plural power semiconductor units. Electrical wiring connection between the plural power semiconductor units is effected by inserting the external terminals of the conductive connecting member into the respective insertion holes of the tubular sockets of the plural power semiconductor units.

摘要翻译： 功率半导体装置具有：多个功率半导体单元，其由转移树脂密封，使得能够插入多个外部端子的导电管状插座的插入孔在其一个表面露出，金属散热面露出 其另一表面; 以及具有多个外部端子的导电连接构件。 具有管状插座的插入孔的功率半导体单元的表面在多个功率半导体单元中以相同的方向排列。 通过将导电连接构件的外部端子插入到多个功率半导体单元的管状插座的各个插入孔中，实现多个功率半导体单元之间的电连接。

公开(公告)号：US20100133667A1

公开(公告)日：2010-06-03

申请号：US12564560

申请日：2009-09-22

申请人： Seiji OKA ,  Yoshiko OBIRAKI ,  Takeshi OI

发明人： Seiji OKA ,  Yoshiko OBIRAKI ,  Takeshi OI

IPC分类号： H01L23/495

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49517 ,  H01L23/49531 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/181 ,  H01L2924/19041 ,  H05K1/141 ,  H05K1/145 ,  H05K3/202 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A wiring process between the provided power semiconductor module and the external circuit is simple. In the power semiconductor module, a power semiconductor element and a cylindrical conductor are joined to one surface of a lead frame. An opening of the cylindrical conductor is exposed at a surface of transfer molding resin. Sealing with the transfer molding resin is performed such that terminal portions of the lead frame protrude from peripheral side portions of the transfer molding resin. The cylindrical conductor is conductive with a control circuit. The terminal portions of the lead frame are each conductive with a main circuit.

摘要翻译： 所提供的功率半导体模块和外部电路之间的布线处理简单。 在功率半导体模块中，功率半导体元件和圆柱形导体接合到引线框架的一个表面。 圆柱形导体的开口在传递模塑树脂的表面露出。 进行与传递模塑树脂的密封，使得引线框架的端子部分从传递模塑树脂的周边部分突出。 圆柱形导体与控制电路导通。 引线框架的端子部分都用主电路导电。

公开(公告)号：US20050029772A1

公开(公告)日：2005-02-10

申请号：US10710747

申请日：2004-07-30

申请人： Takeshi Oi

发明人： Takeshi Oi

IPC分类号： B62K3/02 ,  B62J6/18 ,  B62J99/00 ,  B62K19/06 ,  B62K19/30 ,  B62K19/40 ,  B62K21/12 ,  B62M25/02

CPC分类号： B62K19/30 ,  B62J6/18 ,  B62J11/00 ,  B62J2099/0033

摘要： A bicycle part comprises a tubular bicycle member elongated in a first direction and having a partition forming an interior partitioned chamber that is elongated in the first direction. The bicycle member does not form an opening extending along the entire length of the partitioned chamber that exposes the partitioned chamber, but does include an insertion opening for inserting an elongated member into the partitioned chamber.

摘要翻译： 自行车部件包括在第一方向上延伸的管状自行车部件，并且具有形成在第一方向上延伸的内部分隔室的隔板。 自行车构件不形成沿着分隔室的整个长度延伸的开口，其暴露分隔室，而是包括用于将细长构件插入分隔室的插入开口。

公开(公告)号：US09299628B2

公开(公告)日：2016-03-29

申请号：US14131581

申请日：2012-07-05

申请人： Takayoshi Miki ,  Yasushi Nakayama ,  Takeshi Oi ,  Kazuhiro Tada ,  Shiori Idaka ,  Shigeru Hasegawa ,  Tomohiro Kobayashi ,  Yukio Nakashima

发明人： Takayoshi Miki ,  Yasushi Nakayama ,  Takeshi Oi ,  Kazuhiro Tada ,  Shiori Idaka ,  Shigeru Hasegawa ,  Tomohiro Kobayashi ,  Yukio Nakashima

IPC分类号： H01L23/28 ,  H01L25/18 ,  H01L25/07 ,  H01L23/31 ,  H01L23/373 ,  H01L23/36

CPC分类号： H01L23/28 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/3735 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/4917 ,  H01L2224/49175 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region.

摘要翻译： 提供功率半导体模块，其能够保持宽带隙半导体元件的温度升高程度，降低宽带隙半导体元件的芯片总表面积的增加程度，并且以低成本制造，当Si 半导体元件和宽带隙半导体元件放置在同一个功率半导体模块内。 Si半导体元件被放置在功率半导体模块的中心区域中，并且宽带隙半导体元件相对于中心区域或围绕中心区域的边缘区域放置在相对侧上。

公开(公告)号：US08994165B2

公开(公告)日：2015-03-31

申请号：US12504225

申请日：2009-07-16

申请人： Takeshi Oi ,  Seiji Oka ,  Yoshiko Obiraki ,  Osamu Usui ,  Yasushi Nakayama

发明人： Takeshi Oi ,  Seiji Oka ,  Yoshiko Obiraki ,  Osamu Usui ,  Yasushi Nakayama

IPC分类号： H01L23/48 ,  H05K3/32 ,  H01L23/31 ,  H01L25/07 ,  H01L23/00 ,  H01L25/16 ,  H05K3/28

CPC分类号： H05K3/32 ,  H01L23/3121 ,  H01L24/28 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L25/162 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/4911 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19043 ,  H01L2924/30107 ,  H05K3/284 ,  H05K2201/1031 ,  H05K2201/10333 ,  H05K2201/10962 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512

摘要： A power semiconductor device includes power semiconductor elements joined to wiring patterns of a circuit substrate, cylindrical external terminal communication sections, and wiring means for forming electrical connection between, for example, the power semiconductor elements and the cylindrical external terminal communication sections. The power semiconductor elements, the cylindrical external terminal communication sections, and the wiring means are sealed with transfer molding resin. The cylindrical external terminal communication sections are arranged on the wiring patterns so as to be substantially perpendicular to the wiring patterns, such that external terminals are insertable and connectable to the cylindrical external terminal communication sections, and such that a plurality of cylindrical external terminal communication sections among the cylindrical external terminal communication sections are arranged two-dimensionally on each of wiring patterns that act as main circuits.

摘要翻译： 功率半导体器件包括接合到电路基板的布线图案的电力半导体元件，圆柱形外部端子连通部分和用于形成例如功率半导体元件和圆筒形外部端子连接部分之间的电连接的布线装置。 功率半导体元件，圆筒形外部端子连通部分和布线装置用传递模塑树脂密封。 圆筒形的外部端子连通部分布置在布线图案上，以便大致垂直于布线图案，使得外部端子可插入并可连接到圆柱形外部端子连通部分，并且使得多个圆柱形外部端子连通部分 在作为主电路的每个布线图案上，圆柱形外部端子通信部分二维布置。