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17 条记录 (耗时 0.026 秒)

    Method of fabricating plated circuit lines over ball grid array substrate
    4.
    发明授权
    Method of fabricating plated circuit lines over ball grid array substrate 失效
    在球栅阵列基板上制造电镀电路线的方法

    公开(公告)号：US06399417B1

    公开(公告)日：2002-06-04

    申请号：US09837959

    申请日：2001-04-19

    申请人： Wen Cheng Lee ,  Chih-Chin Liao

    发明人： Wen Cheng Lee ,  Chih-Chin Liao

    IPC分类号： H01L2144

    CPC分类号： H05K3/242 ,  H01L21/4846 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/15311 ,  H05K3/0047 ,  H05K2203/1572 ,  H05K2203/175 ,  H01L2924/00014

    摘要： A method is proposed for the fabrication of plated circuit lines, including contact fingers, electrically-conductive traces, and solder-ball pads, over an BGA (Ball Grid Array) substrate. The method is characterized by that contact fingers, electrically-conductive traces, and solder-ball pads on the BGA substrate are interconnected with provisional bridging lines; and then, each integrally-connected group of the contact fingers, the electrically-conductive traces, and the solder-ball pads is connected via a branched plating line to a common plating bus. During plating process, the plating electrical current can be applied to the plating bus and then distributed over these branched plating lines to all of the contact fingers and the solder-ball pads. Finally, a drilling process is performed to break all the provisional bridging lines into open-circuited state. Compared to the prior art, since the proposed method requires no use of etchant during the drilling process, it would cause no contamination to the substrate surfaces. Moreover, the proposed method allows the use of a reduced layout area for the circuit lines and can help reduce mutual inductive interference among the circuit lines.

    摘要翻译： 提出了一种用于在BGA（球栅阵列）衬底上制造包括接触指状物，导电迹线和焊球焊盘的电镀电路线的方法。 该方法的特征在于，BGA衬底上的接触指状物，导电迹线和焊球焊盘与临时桥接线互连; 然后，每个整体连接的接触指的组，导电迹线和焊球焊盘通过分支电镀线连接到公共电镀母线。 在电镀过程中，电镀电流可以施加到电镀母线上，然后分布在这些分支电镀线上，到所有接触指和焊球垫。 最后，进行钻井过程以将所有临时桥接线路断开为断路状态。 与现有技术相比，由于所提出的方法在钻井过程中不需要使用蚀刻剂，因此不会对基材表面产生污染。 此外，所提出的方法允许对电路线路使用减少的布局面积，并且可以帮助减少电路线路之间的互感干扰。

    MANUFACTURING METHOD OF TUNNEL OXIDE OF NOR FLASH MEMORY
    5.
    发明申请
    MANUFACTURING METHOD OF TUNNEL OXIDE OF NOR FLASH MEMORY 审中-公开
    NOR FLASH存储器隧道氧化物的制造方法

    公开(公告)号：US20140030860A1

    公开(公告)日：2014-01-30

    申请号：US13556490

    申请日：2012-07-24

    申请人： YIDER WU ,  YI-HSIU CHEN ,  WEN-CHENG LEE

    发明人： YIDER WU ,  YI-HSIU CHEN ,  WEN-CHENG LEE

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11521 ,  H01L29/66825

    摘要： A manufacturing method of tunnel oxide of NOR flash memory controls the temperature and thickness of tunnel oxide in a gate structure to prevent a channel region to change its doping concentration and range due to a high-temperature manufacturing process, so as to overcome the leakage current and improve the reliability of storing data.

    摘要翻译： NOR闪存的隧道氧化物的制造方法控制栅极结构中的隧道氧化物的温度和厚度，以防止沟道区域由于高温制造工艺而改变其掺杂浓度和范围，从而克服漏电流 并提高存储数据的可靠性。

    Method of Producing Artificial Stones with Aluminum residues
    6.
    发明申请
    Method of Producing Artificial Stones with Aluminum residues 审中-公开
    生产人造石与铝残留物的方法

    公开(公告)号：US20130049248A1

    公开(公告)日：2013-02-28

    申请号：US13222061

    申请日：2011-08-31

    申请人： Sheng-Fu Yang ,  Yen-Hua Chang ,  Chun-Yen Yeh ,  To-Mei Wang ,  Wen-Cheng Lee ,  Kin-Seng Sun ,  Chin-Ching Tzeng

    发明人： Sheng-Fu Yang ,  Yen-Hua Chang ,  Chun-Yen Yeh ,  To-Mei Wang ,  Wen-Cheng Lee ,  Kin-Seng Sun ,  Chin-Ching Tzeng

    IPC分类号： B29C39/42 ,  B29C39/10

    CPC分类号： B29C39/003 ,  B29C39/42 ,  B29K2105/26 ,  B29K2505/02 ,  B29L2007/002 ,  B29L2031/104

    摘要： The present disclosure uses aluminum residues to fabricate artificial stones. The aluminum residues are obtained from a recycle process of aluminum scrap. The aluminum residues is made into dross and baghouse dust as raw materials for the artificial stones. The artificial stones thus made are improved in characteristics of mechanical strength, hardness, abrasion resistance, flame resistance and anti-oxidation. Hence, the present disclosure reduces impacts to the nature; obtains derived products from recycled aluminum residues; increases commercial income; decreases cost for handling aluminum residues; and saves the use of aluminum oxide, aluminium hydroxide or silicon oxide on making artificial stones. The artificial stones thus made are fit to be used in fields of green material, green construction and green industry.

    摘要翻译： 本公开使用铝残留物来制造人造石。 铝残留物是从铝废料的再循环过程获得的。 铝残留物作为人造石的原料制成浮渣和袋装粉尘。 这样制造的人造石的机械强度，硬度，耐磨性，阻燃性和抗氧化特性得到改善。 因此，本公开减少了对本质的影响; 从回收的铝残留物中获得衍生产品; 增加商业收入; 降低处理铝渣的成本; 并节省使用氧化铝，氢氧化铝或氧化硅制造人造石。 这样制造的人造石适合用于绿色材料，绿色建筑和绿色工业领域。