公开(公告)号：US20120294322A1

公开(公告)日：2012-11-22

申请号：US13565018

申请日：2012-08-02

申请人： Chung Woh Lai ,  Xiao Hu Liu ,  Anita Madan ,  Klaus W. Schwarz ,  J. Campbell Scott

发明人： Chung Woh Lai ,  Xiao Hu Liu ,  Anita Madan ,  Klaus W. Schwarz ,  J. Campbell Scott

IPC分类号： H01S3/10

CPC分类号： H01L21/3221 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/3226 ,  H01L29/1054 ,  H01L29/7842

摘要： A system for manipulating dislocations on semiconductor devices, includes a moveable laser configured to generate a laser beam locally on a surface portion of the semiconductor body having a plurality of dislocations, the moveable laser being characterized as having a scan speed, the moveable laser manipulates the plurality of dislocations on the surface portion of the semiconductor body by adjusting the temperature and the scan speed of the laser beam.

摘要翻译： 一种用于操纵半导体器件上的位错的系统，包括可移动激光器，其被配置为在具有多个位错的半导体主体的表面部分局部地产生激光束，所述可移动激光器的特征在于具有扫描速度，所述可移动激光器 通过调整激光束的温度和扫描速度，半导体本体的表面部分上的多个位错。

公开(公告)号：US08278155B2

公开(公告)日：2012-10-02

申请号：US13100456

申请日：2011-05-04

申请人： Geoffrey W. Burr ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Xiao Hu Liu ,  Stephen M. Rossnagel ,  Christy S. Tyberg ,  Robert L. Wisnieff

发明人： Geoffrey W. Burr ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Xiao Hu Liu ,  Stephen M. Rossnagel ,  Christy S. Tyberg ,  Robert L. Wisnieff

IPC分类号： H01L21/82 ,  H01L21/326 ,  H01L21/479

CPC分类号： H01L23/5256 ,  H01L23/5252 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.

摘要翻译： 集成电路中的可逆熔丝结构通过实现具有短路相变材料的熔断电池获得，所述相变材料与能够使电流通过相变材料线（熔丝电池）的通孔和线结构相接触。 电流通过熔丝电池，以便通过将结晶状态的相变材料加热至熔点，从而将材料从较小电阻的材料转变为更电阻的材料，然后快速将材料淬火成非晶状态。 可逆编程通过使较低电流通过熔丝电池来实现，以将高电阻率无定形材料转换成较低电阻率的晶体材料。 集成适当的感测电路以读取存储在熔丝中的信息，其中所述感测电路用于启用或禁用电路。

公开(公告)号：US08159854B2

公开(公告)日：2012-04-17

申请号：US12495027

申请日：2009-06-30

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns

IPC分类号： G11C5/06

CPC分类号： H03K19/02 ,  G11C11/412 ,  G11C13/0002 ,  H01L49/00 ,  Y10T29/42

摘要： A piezo-effect transistor (PET) device includes a piezoelectric (PE) material disposed between first and second electrodes; and a piezoresistive (PR) material disposed between the second electrode and a third electrode, wherein the first electrode comprises a gate terminal, the second electrode comprises a common terminal, and the third electrode comprises an output terminal such that an electrical resistance of the PR material is dependent upon an applied voltage across the PE material by way of an applied pressure to the PR material by the PE material.

摘要翻译： 压电效应晶体管（PET）器件包括设置在第一和第二电极之间的压电（PE）材料; 以及设置在第二电极和第三电极之间的压阻（PR）材料，其中第一电极包括栅极端子，第二电极包括公共端子，并且第三电极包括输出端子，使得PR的电阻 材料取决于PE材料上施加的电压，通过PE材料对PR材料的施加压力。

公开(公告)号：US08138066B2

公开(公告)日：2012-03-20

申请号：US12242990

申请日：2008-10-01

申请人： Chung Woh Lai ,  Xiao Hu Liu ,  Anita Madan ,  Klaus W. Schwarz ,  J. Campbell Scott

发明人： Chung Woh Lai ,  Xiao Hu Liu ,  Anita Madan ,  Klaus W. Schwarz ,  J. Campbell Scott

IPC分类号： H01L21/322

CPC分类号： H01L21/3221 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/3226 ,  H01L29/1054 ,  H01L29/7842

摘要： A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.

摘要翻译： 提供了一种在半导体器件中产生图案化应变区域的方法。 该方法包括将发光束局部引导到半导体本体的表面部分上; 以及利用所述发光束操作位于所述半导体主体的表面部分附近的多个位错，所述发光束的特征在于具有扫描速度，以便产生所述图案化的应变区域。

公开(公告)号：US20110034047A1

公开(公告)日：2011-02-10

申请号：US12906690

申请日：2010-10-18

申请人： Gareth Geoffrey HOUGHAM ,  S. Jay CHEY ,  James Patrick DOYLE ,  Xiao Hu LIU ,  Christopher V. JAHNES ,  Paul Alfred LAURO ,  Nancy C. LaBIANCA ,  Michael J. ROOKS

发明人： Gareth Geoffrey HOUGHAM ,  S. Jay CHEY ,  James Patrick DOYLE ,  Xiao Hu LIU ,  Christopher V. JAHNES ,  Paul Alfred LAURO ,  Nancy C. LaBIANCA ,  Michael J. ROOKS

IPC分类号： H01R4/58

CPC分类号： B81B3/0035 ,  H01L2924/0002 ,  Y10T428/249986 ,  H01L2924/00

摘要： A method for fabricating a negative thermal expanding system device includes coating a wafer with a thermally decomposable polymer, patterning the decomposable polymer into repeating disk patterns, releasing the decomposable polymer from the wafer and forming a sheet of repeating patterned disks, suspending the sheet into a first solution with seeding compounds for electroless decomposition, removing the sheet from the first solution, suspending the sheet into a second solution to electrolessly deposit a first layer material onto the sheet, removing the sheet from the second solution, suspending the sheet into a third solution to deposit a second layer of material having a lower TCE value than the first layer of material, separating the patterned disks from one another, and annealing thermally the patterned disks to decompose the decomposable polymer and creating a cavity in place of the decomposable polymer.

摘要翻译： 一种制造负热膨胀系统装置的方法包括用可热分解的聚合物涂覆晶片，将可分解的聚合物图案化成重复的圆盘图案，将可分解的聚合物从晶片上释放出来并形成一张重复图案的圆盘，将薄片悬挂在 用于无电解分解的接种化合物的第一溶液，从第一溶液中除去片材，将片材悬浮在第二溶液中以将第一层材料无电沉积到片材上，从第二溶液中除去片材，将片材悬浮在第三溶液中 沉积具有比第一层材料低的TCE值的第二层材料，将图案化的盘彼此分离，并对图案化的盘进行热退火以分解可分解聚合物并产生空腔以代替可分解的聚合物。

公开(公告)号：US20100073997A1

公开(公告)日：2010-03-25

申请号：US12234100

申请日：2008-09-19

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Xiao Hu Liu ,  Glenn J. Martyna ,  Martin Muser ,  Dennis M. Newns

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Xiao Hu Liu ,  Glenn J. Martyna ,  Martin Muser ,  Dennis M. Newns

IPC分类号： G11C11/00 ,  H04R17/00 ,  G11C7/00

CPC分类号： G11C23/00 ,  G11C13/0002 ,  G11C13/0004 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/148 ,  Y10T29/42

摘要： A piezoelectrically programmed, non-volatile memory cell structure includes a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto; a piezoelectric material mechanically coupled to the PHRM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage; and one or more electrodes in electrical communication with the PRHM, wherein the one or more electrodes are configured to provide a write programming current path through the piezoelectric material and a read current path through the PRHM.

摘要翻译： 压电编程的非易失性存储单元结构包括可编程压阻滞回材料（PRHM），其能够通过施加的压力循环而在低电阻状态和高电阻状态之间相互转换; 机械地耦合到PHRM的压电材料，使得跨压电材料施加的电压导致施加到PRHM的拉伸或压缩应力中的一个，这取决于所施加的电压的极性; 以及与PRHM电连通的一个或多个电极，其中所述一个或多个电极被配置为提供通过所述压电材料的写入编程电流路径和通过所述PRHM的读取电流路径。

公开(公告)号：US20100013043A1

公开(公告)日：2010-01-21

申请号：US12174994

申请日：2008-07-17

申请人： Xiao Hu Liu ,  Chih-Chao Yang ,  Haining Sam Yang

发明人： Xiao Hu Liu ,  Chih-Chao Yang ,  Haining Sam Yang

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L23/585 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit chip and a method of fabricating an integrated circuit chip. The integrated circuit chip includes: a continuous first stress ring proximate to a perimeter of the integrated circuit chip, respective edges of the first stress ring parallel to respective edges of the integrated circuit chip; a continuous second stress ring between the first stress ring and the perimeter of the integrated circuit chip, respective edges the second stress ring parallel to respective edges of the integrated circuit chip, the first and second stress rings having opposite internal stresses; a continuous gap between the first stress ring and the second stress ring; and a set of wiring levels from a first wiring level to a last wiring level on the substrate.

摘要翻译： 集成电路芯片和制造集成电路芯片的方法。 集成电路芯片包括：接近集成电路芯片的周边的连续的第一应力环，第一应力环的相应边缘平行于集成电路芯片的相应边缘; 所述第一应力环与所述集成电路芯片的周边之间的连续的第二应力环，所述第二应力环平行于所述集成电路芯片的相应边缘的相应边缘，所述第一和第二应力环具有相反的内应力; 第一应力环和第二应力环之间的连续间隙; 以及从基板上的第一布线电平到最后布线电平的一组布线电平。

公开(公告)号：US20090214780A1

公开(公告)日：2009-08-27

申请号：US12437263

申请日：2009-05-07

申请人： Gareth Geoffrey Hougham ,  Xiao Hu Liu ,  S. Jay Chey ,  Joseph Zinter, JR. ,  Michael J. Rooks ,  Brian Richard Sundlof ,  Jon Alfred Casey

发明人： Gareth Geoffrey Hougham ,  Xiao Hu Liu ,  S. Jay Chey ,  Joseph Zinter, JR. ,  Michael J. Rooks ,  Brian Richard Sundlof ,  Jon Alfred Casey

IPC分类号： B22F9/00 ,  B05D3/02 ,  C23C16/00 ,  B22F1/00

CPC分类号： H01R13/2414 ,  B32B15/08 ,  H01R43/007 ,  H05K1/0271 ,  H05K3/321 ,  H05K3/325 ,  H05K2201/0218 ,  H05K2201/068 ,  Y10T428/12028 ,  Y10T428/12181 ,  Y10T428/12535 ,  Y10T428/249971 ,  Y10T428/249974 ,  Y10T428/31609

摘要： A negative coefficient of thermal expansion particle includes a first bilayer having a first bilayer inner layer and a first bilayer outer layer, and a second bilayer having a second bilayer inner layer and a second bilayer outer layer. The first and second bilayers are joined together along perimeters of the first and second bilayer outer layers and first and second bilayer inner layers, respectively. The first bilayer inner layer and the second bilayer inner layer are made of a first material and the first bilayer outer layer and the second bilayer outer layer are made of a second material. The first material has a greater coefficient of thermal expansion than that of the second material.

摘要翻译： 负系数的热膨胀粒子包括具有第一双层内层和第一双层外层的第一双层和具有第二双层内层和第二双层外层的第二双层。 第一和第二双层分别沿着第一和第二双层外层以及第一和第二双层内层的周边连接在一起。 第一双层内层和第二双层内层由第一材料制成，第一双层外层和第二双层外层由第二材料制成。 第一种材料具有比第二种材料更大的热膨胀系数。

公开(公告)号：US20080217663A1

公开(公告)日：2008-09-11

申请号：US11682554

申请日：2007-03-06

申请人： Bruce B. Doris ,  Xiao Hu Liu

发明人： Bruce B. Doris ,  Xiao Hu Liu

IPC分类号： H01L27/098 ,  H01L21/8238

CPC分类号： H01L21/823807 ,  H01L29/7843

摘要： NFET and PFET devices with separately strained channel regions, and methods of their fabrication is disclosed. A stressing layer overlays the device in a manner that the stressing layer is non-conformal with respect the gate. The non-conformality of the stressing layer increases the amount of stress that is imparted onto the channel of the device, in comparison to stressing layers which are conformal. The method for overlaying in a non-conformal manner includes non-conformal deposition techniques, as well as, conformal depositions where subsequently the layer is turned into a non-conformal one by etching.

摘要翻译： 公开了具有单独应变通道区域的NFET和PFET器件及其制造方法。 应力层以使得应力层相对于浇口不共面的方式覆盖该装置。 与应力层相比，应力层的非共形性增加了施加到器件的通道上的应力的量。 以非共形方式覆盖的方法包括非共形沉积技术以及保形沉积，其中随后通过蚀刻将该层转变为非共形沉积技术。

公开(公告)号：US07394089B2

公开(公告)日：2008-07-01

申请号：US11467294

申请日：2006-08-25

申请人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

发明人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

IPC分类号： H01L47/00

CPC分类号： H01L45/1233 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

摘要翻译： 用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端 元件与第一和第二加热器电极电接触。 相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。