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1.发明授权System and method for cooling workpieces processed by an ion implantation system 失效用于冷却由离子注入系统处理的工件的系统和方法
公开(公告)号：US5828070A
公开(公告)日：1998-10-27
申请号：US756972
申请日：1996-11-26
IPC分类号： H01J27/14 , H01J37/08 , H01J37/18 , H01J37/30 , H01J37/304 , H01J37/317 , H01L21/00 , H01L21/677 , H01L21/683 , G01N21/00 , G21K5/10
CPC分类号： H01L21/67109 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/3002 , H01J37/3007 , H01J37/304 , H01J37/3171 , H01L21/67069 , H01L21/67748 , H01L21/67751 , H01L21/67778 , H01L21/6838 , H01J2237/022 , H01J2237/083 , H01J2237/184 , H01J2237/2001 , H01J2237/2007 , H01J2237/20228 , H01J2237/204 , H01J2237/31701 , H01J2237/31705
摘要： A system and method for conductively and/or convectively transferring heat away from a workpiece that has been processed by a processing system, such as an ion implantation system. The conductive transfer of heat from the workpiece is effectuated by disposing the workpiece in relatively close proximity with a floor of a loadlock, which is maintained at a relatively cool temperature. The chamber pressure is disposed at a selected pressure by a pressure regulator and a vacuum pressure is applied to the backside of the workpiece closest to draw the workpiece into contact with the chamber floor, thereby effecting heat transfer from the workpiece to the cooling surface.
摘要翻译： 一种用于导电地和/或对流地将热量从已经由处理系统例如离子注入系统处理的工件传送的系统和方法。 通过将工件放置在相对靠近装载锁的地板并保持在相对较冷的温度下，来实现来自工件的导热传递。 腔室压力通过压力调节器设置在选定的压力下，并且真空压力施加到最接近工件的工件的背面，以使工件与室底板接触，从而实现从工件到冷却表面的热传递。
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公开(公告)号：US5825038A
公开(公告)日：1998-10-20
申请号：US756656
申请日：1996-11-26
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/3007 , H01J2237/083
摘要： A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion chamber generating a stream of ions, a plasma electrode having an elongated slot with a high aspect ratio for shaping the stream of ions into a ribbon beam, and an electrode assembly for directing the stream of ions towards a workpiece. The plasma electrode can include a split extraction system having a plurality of elongated slots oriented substantially parallel to each other. The ion implantation system can also have a diffusing system for homogenizing the ion stream. Various exemplary diffusing systems include an apertured plate having an array of openings, diffusing magnets, diffusing electrodes, and dithering magnets.
摘要翻译： 快速有效地处理大量平板显示器的高通量离子注入系统。 离子注入系统具有产生离子流的离子室，具有用于将离子流成形为带状束的高纵横比的细长槽的等离子体电极，以及用于将离子流引向工件的电极组件 。 等离子体电极可以包括具有基本上彼此平行取向的多个细长狭缝的分离提取系统。 离子注入系统还可以具有用于使离子流均匀化的扩散系统。 各种示例性扩散系统包括具有开口阵列，扩散磁体，扩散电极和抖动磁体的有孔板。
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公开(公告)号：US07439526B2
公开(公告)日：2008-10-21
申请号：US11312055
申请日：2005-12-20
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/0042 , H01J2237/055 , H01J2237/057
摘要： The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ‘blow-up’ causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.
摘要翻译： 现代半导体集成电路的制造通常需要涉及高电流的低能带电掺杂原子的注入步骤。 当使用这种光束时，添加电子或负离子来中和空间电荷的作用对于获得成功往往是至关重要的。 没有这个补充，离子束可以“爆炸”，导致强度的损失和光束聚焦的破坏。 在本公开中，提出了用于在磁场偏转区域内的带状束的边界内引入和约束中和低能电子和负离子的方法。 描述了用于基于电子损耗，等离子体桥连接和二次电子产生的减少来维持中和的装置。 作为等离子体引入偏转区域的一部分，新型的低温泵送装置选择性地从等离子体流中除去中性原子。
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4.发明授权Resonance method for production of intense low-impurity ion beams of atoms and molecules 有权用于生成原子和分子强度低杂质离子束的共振方法公开(公告)号：US07365340B2
公开(公告)日：2008-04-29
申请号：US11185141
申请日：2005-07-20
IPC分类号： H01J7/24
CPC分类号： H01J37/08 , H01J37/3171 , H01J49/145 , H01J2237/0815 , H01J2237/31705 , H05H3/02
摘要： The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In addition, the invention provides a substantial rejection of companion background ions that are frequently simultaneously emitted with the wanted ions. The principle underlying the present invention is resonance ionization-transfer where energy differences between resonant and non-resonant processes are exploited to enhance or attenuate particular charge-changing processes. This new source technique is relevant to the fields of Accelerator Mass Spectroscopy; Molecular Ion Implantation; Generation of Directed Neutral Beams; and Production of Electrons required for Ion Beam Neutralization within magnetic fields. An example having commercial importance is ionization of the decaborane molecule, B10H14 where an almost perfect ionization resonance match occurs between decaborane molecules and arsenic atoms.
摘要翻译： 本发明包括一种紧凑且经济的装置，用于产生以前不可能以有用强度预先产生的各种各样的所需正，负分子和原子离子束的强度。 此外，本发明提供了与所需离子频繁同时发射的伴随背景离子的显着排除。 本发明的基本原理是谐振电离转移，其中利用共振和非共振过程之间的能量差异来增强或减弱特定的电荷变化过程。 这种新的源技术与加速器质谱技术相关; 分子离子注入 定向中性梁的生成 和磁场中离子束中和所需的电子的生产。 具有商业重要性的实例是十硼烷分子的电离，其中在十硼烷分子和砷原子之间发生几乎完美的电离谐振匹配的B 10 H 14 N 14。
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公开(公告)号：US07301156B2
公开(公告)日：2007-11-27
申请号：US11154085
申请日：2005-06-16
IPC分类号： H01L21/425
CPC分类号： H01J37/141 , H01J37/14 , H01J37/147 , H01J37/1472 , H01J37/153 , H01J37/315 , H01J37/3171 , H01J2237/141 , H01J2237/1534 , H01J2237/31703
摘要： A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
摘要翻译： 一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。 在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。 此外，该方法和装置可用于沿着光束线引入四极场。
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公开(公告)号：US20070170369A1
公开(公告)日：2007-07-26
申请号：US11537011
申请日：2006-09-29
申请人： Kenneth H. Purser , Atul Gupta
发明人： Kenneth H. Purser , Atul Gupta
IPC分类号： H01J37/153
CPC分类号： H01J37/147 , H01J37/3007 , H01J2237/1501 , H01J2237/152 , H01J2237/30477 , H01J2237/31701
摘要： A technique for improving uniformity of a ribbon beam is disclosed. In one particular exemplary embodiment, an apparatus may comprise a first corrector-bar assembly and a second corrector-bar assembly, wherein the second corrector-bar assembly is located at a predetermined distance from the first corrector-bar assembly. Each of a first plurality of coils in the first corrector-bar assembly may be individually excited to deflect at least one beamlet in the ribbon beam, thereby causing the beamlets to arrive at the second corrector-bar assembly in a desired spatial spread. Each of a second plurality of coils in the second corrector-bar assembly may be individually excited to further deflect one or more beamlets in the ribbon beam, thereby causing the beamlets to exit the second corrector-bar assembly at desired angles.
摘要翻译： 公开了一种用于提高带状束的均匀性的技术。 在一个特定示例性实施例中，装置可以包括第一校正杆组件和第二校正杆组件，其中第二校正杆组件位于距离第一校正杆组件预定距离处。 第一校正棒组件中的第一组多个线圈中的每一个可以被单独地激发以偏转带束束中的至少一个子束，从而使子束以期望的空间扩展到达第二校正器组件。 可以单独地激励第二校正棒组件中的第二组多个线圈中的每一个以进一步偏转带状束中的一个或多个子束，从而使子束以期望的角度离开第二校正棒组件。
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公开(公告)号：US5438194A
公开(公告)日：1995-08-01
申请号：US99844
申请日：1993-07-30
CPC分类号： H01J27/028 , H01J49/0086 , G01N30/7206 , G01N30/7233
摘要： Samples are directed into a liquid or gas chromatograph, and the output from the liquid or gas chromatograph is directed into the ion source of an accelerator mass spectrometry system so as to provide an ultra-sensitive identifier of molecules in the samples.
摘要翻译： 样品被引导到液体或气相色谱仪中，液体或气相色谱仪的输出被引导到加速器质谱系统的离子源中，以便在样品中提供分子的超敏感标识符。
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公开(公告)号：US5391870A
公开(公告)日：1995-02-21
申请号：US115878
申请日：1993-09-01
申请人： Kenneth H. Purser
发明人： Kenneth H. Purser
CPC分类号： H01J49/32 , H01J49/0086
摘要： Compact and economical apparatus for use in accelerator mass spectrometry for mass selection and attenuation of each isotope by a predetermined fraction that is necessary to permit isotope sequencing through the accelerator stage, by a rotating shutter whose attenuation characteristics are defined by its mechanical shape.
摘要翻译： 用于加速器质谱的紧凑而经济的装置，用于通过其衰减特性由其机械形状限定的旋转快门，通过预定分数进行质量选择和衰减每个同位素，该预定分数是允许通过加速器阶段同位素排序所必需的。
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9.发明授权Precision ultra-sensitive trace detector for carbon-14 when it is at concentration close to that present in recent organic materials 失效当浓度接近现有的有机材料浓度时，用于碳-14的精密超灵敏痕量探测器
公开(公告)号：US4973841A
公开(公告)日：1990-11-27
申请号：US474376
申请日：1990-02-02
申请人： Kenneth H. Purser
发明人： Kenneth H. Purser
CPC分类号： B01D59/48 , H01J49/0086 , H01J49/26 , Y10T436/24
摘要： A method of detecting the amount of C-14 in a sample, comprising the following steps:ionizing the sample to form a negative-ion beam; deflecting said beam in a magnetic field and directing the deflected beam through a first acceptance aperture to remove all negative ions except mass-14 particles; accelerating said mass-14 negative ions to an energy E of the order of 10 MeV by a high voltage electrostatic field; stripping three electrons from a majority of said negative ions to form doubly-charged positive ions; deflecting said doubly-charged positive ions in an electrostatic deflecting field through 180.degree. and directing the deflected beam through a second acceptance aperture to remove particles in other than the 2.sup.+ charge state and particles with an energy other than E; accelerating the remaining particles to an energy of about 3E by said high-voltage electrostatic field; stripping an additional electron from about half of said 3E ions, whereby metastable mass-14 molecules are dissociated; directing the remaining 3E ions through a magnetic sector field which focuses the C-14 ions through a final defining aperture and onto a detector.
摘要翻译： 一种检测样品中C-14量的方法，包括以下步骤：离子化样品以形成负离子束; 在所述磁场中偏转所述光束，并且将所述偏转的光束引导通过第一接收孔以除去除了质量-14颗粒之外的所有负离子; 通过高压静电场将所述质量-14负离子加速到10MeV量级的能量E; 从大部分负离子剥离三个电子以形成双重带电的正离子; 将静电偏转场中的所述双重带电的正离子偏转180°，并将偏转的光束引导通过第二接收孔以除了2+电荷状态以外的颗粒和具有除E以外的能量的颗粒; 通过所述高压静电场将剩余的颗粒加速到约3E的能量; 从大约一半的所述3E离子中除去另外的电子，由此亚稳质粒子14分子被解离; 将剩余的3E离子引导通过磁场区域，其将C-14离子聚焦到最终限定的孔并且到达检测器。
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公开(公告)号：US06933507B2
公开(公告)日：2005-08-23
申请号：US10619702
申请日：2003-07-15
IPC分类号： H01J37/141 , H01J37/08 , H01J37/14 , H01J37/147 , H01J37/315 , H01J37/317 , H01L21/425
CPC分类号： H01J37/141 , H01J37/14 , H01J37/147 , H01J37/1472 , H01J37/153 , H01J37/315 , H01J37/3171 , H01J2237/141 , H01J2237/1534 , H01J2237/31703
摘要： A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
摘要翻译： 一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。 在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。 此外，该方法和装置可用于沿着光束线引入四极场。
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