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公开(公告)号：US20150037390A1
公开(公告)日：2015-02-05
申请号：US13956821
申请日：2013-08-01
发明人： Daniel J. Coady , Richard A. Dipietro , Amanda C. Engler , James L. Hedrick , Shao Qiong Liu , Hareem T. Maune , Alshakim Nelson , Jed W. Pitera , Shrinivas Venkataraman , Yi Yan Yang
IPC分类号： A61K9/70 , C07C275/42
CPC分类号： A61K9/70 , A61K9/0092 , A61K31/166 , A61K31/17 , A61K31/43 , A61K31/431 , A61K31/616 , A61K47/6921 , A61K47/6953
摘要： Cationic, anionic, and/or zwitterionic bis-urea compounds self-assemble by non-covalent interactions in aqueous solution to form high aspect ratio nanofibers. The nanofibers reversibly bind drugs by non-covalent interactions, forming drug compositions for exhibiting sustained release of the drug.
摘要翻译： 阳离子，阴离子和/或两性离子双脲化合物通过在水溶液中的非共价相互作用自组装形成高纵横比纳米纤维。 纳米纤维通过非共价相互作用可逆地结合药物，形成用于显示药物持续释放的药物组合物。
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公开(公告)号：US09084735B2
公开(公告)日：2015-07-21
申请号：US13956821
申请日：2013-08-01
发明人： Daniel J. Coady , Richard A. Dipietro , Amanda C. Engler , James L. Hedrick , Shao Qiong Liu , Jed W. Pitera , Shrinivas Venkataraman , Yi Yan Yang
IPC分类号： A61K9/70 , A61K31/43 , A61K31/431 , A61K31/616 , A61K31/166 , A61K31/17
CPC分类号： A61K9/70 , A61K9/0092 , A61K31/166 , A61K31/17 , A61K31/43 , A61K31/431 , A61K31/616 , A61K47/6921 , A61K47/6953
摘要： Cationic, anionic, and/or zwitterionic bis-urea compounds self-assemble by non-covalent interactions in aqueous solution to form high aspect ratio nanofibers. The nanofibers reversibly bind drugs by non-covalent interactions, forming drug compositions for exhibiting sustained release of the drug.
摘要翻译： 阳离子，阴离子和/或两性离子双脲化合物通过在水溶液中的非共价相互作用自组装形成高纵横比纳米纤维。 纳米纤维通过非共价相互作用可逆地结合药物，形成用于显示药物持续释放的药物组合物。
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公开(公告)号：US20180012795A1
公开(公告)日：2018-01-11
申请号：US15206789
申请日：2016-07-11
发明人： Hsueh-Chung Chen , Cheng Chi , Lin Hu , Kafai Lai , Chi-Chun Liu , Jed W. Pitera
IPC分类号： H01L21/768 , H01L21/02 , G06F17/50 , H01L23/528 , H01L23/522
CPC分类号： H01L21/76816 , G06F17/5072 , H01L21/02118 , H01L21/02318 , H01L23/5226 , H01L23/528
摘要： A method for local pattern density control of a device layout used by graphoepitaxy directed self-assembly (DSA) processes includes importing a multi-layer semiconductor device design into an assist feature system and determining overlapping regions between two or more layers in the multi-layer semiconductor device design using at least one Boolean operation. A fill for assist features is generated to provide dimensional consistency of device features by employing the overlapping regions to provide placement of the assist features. An updated device layout is stored in a memory device.
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公开(公告)号：US09581899B2
公开(公告)日：2017-02-28
申请号：US13686058
申请日：2012-11-27
发明人： Michael A. Guillorn , Kafai Lai , Jed W. Pitera , Hsinyu Tsai
IPC分类号： G03F7/40 , G03F7/00 , H01L21/033 , H01L21/311 , B81C1/00 , H01L21/768 , B81B7/00 , G03F7/16
CPC分类号： G03F7/0002 , B81B7/0006 , B81B2203/0353 , B81B2207/07 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , G03F7/0035 , G03F7/165 , H01L21/0337 , H01L21/3086 , H01L21/31144
摘要： After formation of a template layer over a neutral polymer layer, a self-assembling block copolymer material is applied and self-assembled. The template layer includes a first linear portion, a second linear portion that is shorter than the first linear portion, and blocking template structures having a greater width than the second linear portion. The self-assembling block copolymer material is phase-separated into alternating lamellae in regions away from the widthwise-extending portion. The blocking template structures perturb, and cause termination of, the lamellae. A cavity parallel to the first and second linear portions and terminating in self-alignment to the blocking template structures is formed upon selective removal of a polymeric block component. The pattern of the cavity can be inverted and transferred into the material layer to form fins having different lengths.
摘要翻译： 在中性聚合物层上形成模板层之后，自组装嵌段共聚物材料被应用并自组装。 模板层包括第一直线部分，比第一直线部分短的第二直线部分，以及阻挡具有比第二直线部分更大的宽度的模板结构。 自组装嵌段共聚物材料在远离宽度方向延伸部分的区域中相分离成交替的薄片。 阻挡模板结构扰乱并导致薄片的终止。 在选择性去除聚合物嵌段组分时，形成平行于第一和第二直线部分并终止于与阻挡模板结构自对准的空腔。 空腔的图案可以反转并转移到材料层中以形成具有不同长度的翅片。
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公开(公告)号：US10361116B2
公开(公告)日：2019-07-23
申请号：US15926274
申请日：2018-03-20
发明人： Hsueh-Chung Chen , Cheng Chi , Lin Hu , Kafai Lai , Chi-Chun Liu , Jed W. Pitera
IPC分类号： H01L21/768 , H01L21/02 , G06F17/50 , H01L23/528 , H01L23/522 , H01L21/027
摘要： A method for local pattern density control of a device layout used by graphoepitaxy directed self-assembly (DSA) processes includes importing a multi-layer semiconductor device design into an assist feature system and determining overlapping regions between two or more layers in the multi-layer semiconductor device design using at least one Boolean operation. A fill for assist features is generated to provide dimensional consistency of device features by employing the overlapping regions to provide placement of the assist features. An updated device layout is stored in a memory device.
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公开(公告)号：US20180211869A1
公开(公告)日：2018-07-26
申请号：US15926274
申请日：2018-03-20
发明人： Hsueh-Chung Chen , Cheng Chi , Lin Hu , Kafai Lai , Chi-Chun Liu , Jed W. Pitera
IPC分类号： H01L21/768 , H01L21/02 , G06F17/50 , H01L23/528 , H01L23/522
CPC分类号： H01L21/76816 , G06F17/5072 , H01L21/02118 , H01L21/02318 , H01L23/5226 , H01L23/528
摘要： A method for local pattern density control of a device layout used by graphoepitaxy directed self-assembly (DSA) processes includes importing a multi-layer semiconductor device design into an assist feature system and determining overlapping regions between two or more layers in the multi-layer semiconductor device design using at least one Boolean operation. A fill for assist features is generated to provide dimensional consistency of device features by employing the overlapping regions to provide placement of the assist features. An updated device layout is stored in a memory device.
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公开(公告)号：US09884978B2
公开(公告)日：2018-02-06
申请号：US14754664
申请日：2015-06-29
发明人： Joy Cheng , Michael A. Guillorn , Chi-Chun Liu , Jed W. Pitera , Hsinyu Tsai
IPC分类号： C09D201/00 , G03F7/00 , H01L21/027
CPC分类号： C09D201/00 , G03F7/0002 , H01L21/0271
摘要： The disclosure provides methods for directed self-assembly (DSA) of a block co-polymer (BCP). In one embodiment, a method includes: forming an oxide spacer along each of a first sidewall and a second sidewall of a cavity in a semiconductor substrate; forming a neutral layer between the oxide spacers and along a bottom of the cavity; and removing the oxide spacers to expose the first and second sidewalls and a portion of the bottom of the cavity adjacent the first and second sidewalls.
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公开(公告)号：US10081740B2
公开(公告)日：2018-09-25
申请号：US15728877
申请日：2017-10-10
发明人： Joy Cheng , Michael A. Guillorn , Chi-Chun Liu , Jed W. Pitera , Hsinyu Tsai
IPC分类号： C09D201/00 , H01L21/027 , G03F7/00
CPC分类号： C09D201/00 , C09D153/00 , G03F7/0002 , H01L21/0271
摘要： The disclosure provides methods for directed self-assembly (DSA) of a block co-polymer (BCP). In one embodiment, a method includes: forming an oxide spacer along each of a first sidewall and a second sidewall of a cavity in a semiconductor substrate; forming a neutral layer between the oxide spacers and along a bottom of the cavity; and removing the oxide spacers to expose the first and second sidewalls and a portion of the bottom of the cavity adjacent the first and second sidewalls.
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公开(公告)号：US20180030312A1
公开(公告)日：2018-02-01
申请号：US15728877
申请日：2017-10-10
发明人： Joy Cheng , Michael A. Guillorn , Chi-Chun Liu , Jed W. Pitera , Hsinyu Tsai
IPC分类号： C09D201/00 , H01L21/027 , G03F7/00
CPC分类号： C09D201/00 , G03F7/0002 , H01L21/0271
摘要： The disclosure provides methods for directed self-assembly (DSA) of a block co-polymer (BCP). In one embodiment, a method includes: forming an oxide spacer along each of a first sidewall and a second sidewall of a cavity in a semiconductor substrate; forming a neutral layer between the oxide spacers and along a bottom of the cavity; and removing the oxide spacers to expose the first and second sidewalls and a portion of the bottom of the cavity adjacent the first and second sidewalls.
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公开(公告)号：US20170114246A1
公开(公告)日：2017-04-27
申请号：US14919070
申请日：2015-10-21
发明人： Noel Arellano , Joy Cheng , Teddie P. Magbitang , Jed W. Pitera , Daniel P. Sanders , Kristin Schmidt , Hoa D. Truong , Ankit Vora
IPC分类号： C09D169/00 , C08J7/04 , C09D167/04 , C08G63/64 , C08G63/08
CPC分类号： C09D169/005 , C08F212/08 , C08G63/08 , C08G63/64 , C08G63/6822 , C08G64/18 , C08J7/047 , C08J2333/12 , C08J2467/04 , C08J2469/00 , C09D125/08 , C09D153/00 , C09D167/04 , C09D169/00 , G03F7/0002
摘要： Block copolymers (BCPs) for self-assembly applications comprise a linear fluorinated linking group L′ joining a pair of adjacent blocks. A film layer comprising a BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented domain pattern when the underlayer is preferentially wetted by one domain of an otherwise identical self-assembled BCP in which all fluorines of L′ are replaced by hydrogen. The BCP can be a low-chi or high-chi BCP. In a preferred embodiment, the BCP comprises a styrene-based first block, and a second block comprises a carbonate and/or ester repeat unit formed by ring opening polymerization of a cyclic carbonate and/or cyclic ester monomer. The linking group L′ has a lower surface energy than each of the polymer blocks.
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