公开(公告)号：US08822263B2

公开(公告)日：2014-09-02

申请号：US12493765

申请日：2009-06-29

申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Tetsuo Fujii ,  Naoki Yoshii

发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Tetsuo Fujii ,  Naoki Yoshii

IPC分类号： H04L21/00

CPC分类号： C23C16/407 ,  C23C16/0272 ,  C30B25/183 ,  C30B25/20 ,  C30B29/16 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/22

摘要： It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.

摘要翻译： 提供了异质外延生长方法，异质外延晶体结构，异质外延生长装置和半导体器件，该方法包括形成由氧化物的取向膜形成的缓冲层或在异质外延生长方法上的氮化物取向膜 基质; 并且使用卤化II族金属和氧材料在缓冲层上进行氧化锌基半导体层的晶体生长。 提供同质外延生长方法，同质外延晶体结构，同质外延生长装置和半导体器件，同质外延生长方法包括将含有锌的气体和含氧气体的反应气体引入到氧化锌衬底上; 并且在氧化锌衬底上进行氧化锌基半导体层的晶体生长。

公开(公告)号：US20100006836A1

公开(公告)日：2010-01-14

申请号：US12493765

申请日：2009-06-29

申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Tetsuo Fujii ,  Naoki Yoshii

发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Tetsuo Fujii ,  Naoki Yoshii

IPC分类号： H01L29/12 ,  H01L21/04 ,  C30B25/02 ,  C23C16/06

CPC分类号： C23C16/407 ,  C23C16/0272 ,  C30B25/183 ,  C30B25/20 ,  C30B29/16 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/22

摘要： It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate. It is provided a ZnO based semiconductor, a fabrication method for a ZnO based semiconductor, and an apparatus for fabricating a ZnO based semiconductor, and the method includes introducing reactant gas mixing halogenated group II metallic gas including zinc and oxygen containing gas on one of a substrate and a semiconductor layer; and introducing hydride gas of group V as p type impurity material gas on one of the substrate and the semiconductor layer, wherein crystal growth of the zinc oxide based semiconductor layer doped with a p type impurity is performed on one of the substrate and the semiconductor layer, preventing mixing of the impurity which is not aimed and doping a p type impurity enough also at high temperature.

摘要翻译： 提供了异质外延生长方法，异质外延晶体结构，异质外延生长装置和半导体器件，该方法包括形成由氧化物的取向膜形成的缓冲层或在异质外延生长方法上的氮化物取向膜 基质; 并且使用卤化II族金属和氧材料在缓冲层上进行氧化锌基半导体层的晶体生长。 提供同质外延生长方法，同质外延晶体结构，同质外延生长装置和半导体器件，同质外延生长方法包括将含有锌的气体和含氧气体的反应气体引入到氧化锌衬底上; 并且在氧化锌衬底上进行氧化锌基半导体层的晶体生长。 提供了一种ZnO基半导体，一种用于ZnO基半导体的制造方法和一种用于制造ZnO基半导体的装置，该方法包括将包含锌和含氧气体的卤化II族金属气体混合在一起的反应气体 衬底和半导体层; 并且在基板和半导体层之一上引入第V族氢化物气体作为p型杂质材料气体，其中在衬底和半导体层之一上进行掺杂有p型杂质的氧化锌基半导体层的晶体生长， 防止在高温下混入不是目标的杂质和掺杂的p型杂质。

公开(公告)号：US08721846B2

公开(公告)日：2014-05-13

申请号：US11720461

申请日：2005-11-29

申请人： Naoki Yoshii ,  Yasuhiko Kojima

发明人： Naoki Yoshii ,  Yasuhiko Kojima

IPC分类号： C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  H01L21/44 ,  C23C14/16 ,  C23C10/06 ,  C23C14/14 ,  C23C26/00 ,  H01L21/285 ,  H01L21/768 ,  H01J37/34 ,  C23C14/34 ,  C23C10/02

CPC分类号： C23C14/165 ,  C23C10/02 ,  C23C10/06 ,  C23C14/0057 ,  C23C14/14 ,  C23C14/345 ,  C23C26/00 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873

摘要： A film forming method includes mounting a substrate on a mounting member after loading the substrate into a reaction chamber, adsorbing a compound of a first metal on a surface of the substrate by supplying a source gas containing the compound of the first metal into the reaction chamber, reducing the compound of the first metal adsorbed on the substrate by making a reducing gas contact therewith to thereby obtain a first metal layer, and alloying the first metal and a second metal to obtain an alloy layer of the first metal and the second metal by injecting the second metal into the first metal layer. The second metal is ejected from a target electrode facing the substrate by making a sputtering plasma contact with the target electrode, and at least a surface of the target electrode is formed of the second metal different from the first metal.

摘要翻译： 一种成膜方法，包括：在将基板装载到反应室中之后，将基板安装在安装构件上，通过将含有第一金属的化合物的源气体供应到反应室中，将基板的表面上的第一金属的化合物吸附在基板的表面上 通过使还原气体与其接触来还原吸附在基板上的第一金属的化合物，从而获得第一金属层，并且使第一金属和第二金属合金化，以通过以下方式获得第一金属和第二金属的合金层： 将第二金属注入第一金属层。 通过与目标电极进行溅射等离子体接触，第二金属从面向基板的靶电极喷出，目标电极的至少表面由与第一金属不同的第二金属形成。

公开(公告)号：US20070004186A1

公开(公告)日：2007-01-04

申请号：US11514919

申请日：2006-09-05

申请人： Naoki Yoshii ,  Yasuhiko Kojima

发明人： Naoki Yoshii ,  Yasuhiko Kojima

IPC分类号： H01L21/00 ,  G06F19/00 ,  C23C16/00 ,  H01L21/20

CPC分类号： H01L21/76841 ,  C23C16/45542 ,  C23C16/515 ,  H01L21/28562

摘要： A film forming method is provided for forming a thin film including a metal on a substrate by alternately supplying the substrate with a film forming material including the metal and a reducing gas. At least a part of the film forming material is dissociated or decomposed in vapor phase by plasma and supplied onto the substrate.

摘要翻译： 提供了一种成膜方法，用于通过交替地向衬底提供包括金属和还原气体的成膜材料来在衬底上形成包括金属的薄膜。 至少一部分成膜材料通过等离子体在气相中解离或分解并供给到基底上。

公开(公告)号：US20090032950A1

公开(公告)日：2009-02-05

申请号：US11718100

申请日：2005-10-03

申请人： Yasuhiko Kojima ,  Naoki Yoshii

发明人： Yasuhiko Kojima ,  Naoki Yoshii

IPC分类号： H01L23/52 ,  B05D1/36 ,  B05D5/00 ,  C23C16/04 ,  C23C16/06 ,  H01L21/44

CPC分类号： H01L21/76877 ,  C23C16/0272 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76846

摘要： An adhesion between a Cu diffusion barrier film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming an adhesion film on the Cu diffusion barrier film formed on the substrate to be processed, and a second process of forming a Cu film on the adhesion film. The adhesion film includes Pd.

摘要翻译： 半导体器件中的Cu扩散阻挡膜和Cu布线之间的粘附性得到改善，并且提高了半导体器件的可靠性。 在被处理基板上形成Cu膜的成膜方法设置有在形成在待加工基板上的Cu扩散阻挡膜上形成粘合膜的第一工序，以及将Cu膜形成第二工序 粘附膜。 附着膜包括Pd。

公开(公告)号：US20060068104A1

公开(公告)日：2006-03-30

申请号：US11231962

申请日：2005-09-22

申请人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

发明人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

IPC分类号： C23C16/00

CPC分类号： C23C16/34 ,  C23C16/45529 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/7685 ,  H01L2221/1078

摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.

摘要翻译： 用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。 在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b） 将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。 在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤， 将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。

公开(公告)号：US20090145744A1

公开(公告)日：2009-06-11

申请号：US11720461

申请日：2005-11-29

申请人： Naoki Yoshii ,  Yasuhiko Kojima

发明人： Naoki Yoshii ,  Yasuhiko Kojima

IPC分类号： C23C14/38

CPC分类号： C23C14/165 ,  C23C10/02 ,  C23C10/06 ,  C23C14/0057 ,  C23C14/14 ,  C23C14/345 ,  C23C26/00 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873

摘要： Even in the application of a highly cohesive metal to a surface of treatment object having recesses of high aspect ratio, a continuous thin-film can be formed. There is provided a method of forming a film, comprising the step of carrying a substrate in a reaction chamber and mounting the same, the step of feeding a raw gas containing a compound of a first metal into the reaction chamber to thereby cause the surface of the substrate to adsorb the compound of the first metal, the step of bringing the compound the first metal into contact with a reducing plasma resulting from activation of a reducing gas to thereby obtain a first metal layer and the step of bringing a target electrode whose at least surface portion consists of a second metal different from the first metal into contact with a sputtering plasma and incorporating the thus ejected second metal into the first metal layer to thereby obtain an alloy layer, wherein this sequence of adsorption, reduction and alloy formation steps is carried out one or more times. By virtue of this method even when the cohesive force of the first metal is large, any migration thereof on the substrate is suppressed to thereby realize formation of a continuous thin film of small thickness.

摘要翻译： 即使在将高粘结性金属施加到具有高纵横比的凹槽的处理对象的表面上，也可以形成连续的薄膜。 提供了一种形成膜的方法，包括在反应室中载置基板并安装其的步骤，将含有第一金属化合物的原料气体进料到反应室中，从而使表面 用于吸附第一金属的化合物的基板，使第一金属与由还原气体的活化引起的还原性等离子体接触从而获得第一金属层的步骤，以及使目标电极的 最小表面部分由不同于第一金属的第二金属组成，与溅射等离子体接触并将由此喷出的第二金属合并到第一金属层中，从而获得合金层，其中吸附，还原和合金形成步骤的顺序为 进行一次或多次。 通过该方法，即使第一金属的内聚力大，也能抑制基板上的迁移，从而形成厚度薄的连续薄膜。

公开(公告)号：US07846839B2

公开(公告)日：2010-12-07

申请号：US11718100

申请日：2005-10-03

申请人： Yasuhiko Kojima ,  Naoki Yoshii

发明人： Yasuhiko Kojima ,  Naoki Yoshii

IPC分类号： H01L21/44

CPC分类号： H01L21/76877 ,  C23C16/0272 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76846

摘要： An adhesion between a Cu diffusion barrier film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming an adhesion film on the Cu diffusion barrier film formed on the substrate to be processed, and a second process of forming a Cu film on the adhesion film. The adhesion film includes Pd.

摘要翻译： 半导体器件中的Cu扩散阻挡膜和Cu布线之间的粘附性得到改善，并且提高了半导体器件的可靠性。 在被处理基板上形成Cu膜的成膜方法设置有在形成在待加工基板上的Cu扩散阻挡膜上形成粘合膜的第一工序，以及将Cu膜形成第二工序 粘附膜。 附着膜包括Pd。

公开(公告)号：US07717061B2

公开(公告)日：2010-05-18

申请号：US11232943

申请日：2005-09-23

申请人： Tadahiro Ishizaka ,  Naoki Yoshii ,  Kohei Kawamura ,  Yukio Fukuda ,  Takashi Shigeoka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Junichi Arami ,  Atsushi Gomi

发明人： Tadahiro Ishizaka ,  Naoki Yoshii ,  Kohei Kawamura ,  Yukio Fukuda ,  Takashi Shigeoka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Junichi Arami ,  Atsushi Gomi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  F16K11/065 ,  F16K11/085 ,  F16K11/074 ,  F16K3/08 ,  F16K47/04

CPC分类号： C23C16/45542 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45561 ,  Y10T137/86558 ,  Y10T137/86566 ,  Y10T137/86638 ,  Y10T137/86726 ,  Y10T137/86743 ,  Y10T137/86751 ,  Y10T137/86871

摘要： A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).

摘要翻译： 公开了能够在连续地形成还原气体的等离子体的同时交替地切换原料气体和还原气体的供给的处理装置。 励磁装置（12）激发供给到其中的还原气体，并将被激发的还原气体供给到处理室（2）。 在励磁装置（12）和处理室（2）之间设置有切换机构（20），旁通管路（22）与切换机构（20）连接。 切换机构（20）切换来自处理室（2）和旁通管线（22）之间的激发装置（12）的被激发的还原气体的流动。

公开(公告)号：US20090029047A1

公开(公告)日：2009-01-29

申请号：US11909160

申请日：2006-03-22

申请人： Naoki Yoshii ,  Koumei Matsuzawa ,  Yasuhiko Kojima

发明人： Naoki Yoshii ,  Koumei Matsuzawa ,  Yasuhiko Kojima

IPC分类号： C23C16/00

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/18 ,  H01L21/76838 ,  H01L21/76841

摘要： Disclosed is a film-forming method characterized by comprising a step for forming a primary Cu film on a substrate by using a divalent Cu source material, and another step for forming a secondary Cu film on the primary Cu film by using a monovalent Cu source material.

摘要翻译： 公开了一种成膜方法，其特征在于包括通过使用二价Cu源材料在基板上形成初级Cu膜的步骤，以及通过使用一价Cu源材料在初级Cu膜上形成二次Cu膜的另一步骤 。