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公开(公告)号:US11815401B2
公开(公告)日:2023-11-14
申请号:US17743714
申请日:2022-05-13
Applicant: Applied Materials, Inc.
Inventor: Zhepeng Cong , Schubert S. Chu , Nyi O. Myo
Abstract: A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.
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公开(公告)号:US11848226B2
公开(公告)日:2023-12-19
申请号:US17183146
申请日:2021-02-23
Applicant: Applied Materials, Inc.
Inventor: Anhthu Ngo , Zuoming Zhu , Balasubramanian Ramachandran , Paul Brillhart , Edric Tong , Anzhong Chang , Kin Pong Lo , Kartik Shah , Schubert S. Chu , Zhepeng Cong , James Francis Mack , Nyi O. Myo , Kevin Joseph Bautista , Xuebin Li , Yi-Chiau Huang , Zhiyuan Ye
IPC: H01L21/687 , C30B25/12 , B05C13/02 , B05C13/00 , H01L21/673 , C23C16/458
CPC classification number: H01L21/68735 , B05C13/00 , B05C13/02 , C30B25/12 , H01L21/67326 , H01L21/6875 , H01L21/68785 , C23C16/4585
Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.
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公开(公告)号:US11821088B2
公开(公告)日:2023-11-21
申请号:US17331401
申请日:2021-05-26
Applicant: Applied Materials, Inc.
Inventor: Shu-Kwan Lau , Koji Nakanishi , Toshiyuki Nakagawa , Zuoming Zhu , Zhiyuan Ye , Joseph M. Ranish , Nyi O. Myo , Errol Antonio C. Sanchez , Schubert S. Chu
IPC: C23C16/46 , H01L21/67 , H01L21/687 , B23K26/00 , B23K26/12 , B23K26/06 , B23K26/03 , B23K26/08 , C23C16/52 , B23K26/352
CPC classification number: C23C16/46 , B23K26/0006 , B23K26/032 , B23K26/034 , B23K26/0604 , B23K26/08 , B23K26/123 , B23K26/126 , B23K26/127 , B23K26/128 , B23K26/352 , C23C16/52 , H01L21/6719 , H01L21/67115 , H01L21/67248 , H01L21/68742 , H01L21/68764 , H01L21/68785 , H01L21/68757
Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.
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公开(公告)号:US11359972B2
公开(公告)日:2022-06-14
申请号:US17021411
申请日:2020-09-15
Applicant: Applied Materials, Inc.
Inventor: Zhepeng Cong , Schubert S. Chu , Nyi O. Myo
Abstract: A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.
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公开(公告)号:US11021790B2
公开(公告)日:2021-06-01
申请号:US16521826
申请日:2019-07-25
Applicant: Applied Materials, Inc.
Inventor: Zhepeng Cong , Schubert Chu , Nyi O. Myo , Kartik Shah , Surajit Kumar
IPC: C23C16/44 , C30B25/08 , C23C16/458 , C23C16/46
Abstract: Embodiments herein relate to chamber liners with a multi-piece design for use in processing chambers. The multi-piece design can have an inner portion and an outer portion. A portion of the inner surface of the outer portion may be designed to be in contact with the outer surface of the inner portion at a single junction point, creating a thermal barrier between the inner portion and outer portion, thus reducing heat transfer from the inner portion and outer portion. The thermal barrier creates higher temperatures at the chamber liner inner surface and therefore leads to shorter heat up times within the chamber. Additionally, the thermal barrier also creates lower temperatures near the base ring and outer surface of the outer ring, thereby protecting the chamber walls and requiring less thermal regulation/dissipation at the chamber walls.
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公开(公告)号:US10731272B2
公开(公告)日:2020-08-04
申请号:US16282576
申请日:2019-02-22
Applicant: APPLIED MATERIALS, INC.
Inventor: Nyi O. Myo , Kevin Bautista , Zhiyuan Ye , Schubert S. Chu , Yihwan Kim
IPC: C30B25/10 , C30B25/12 , C23C16/458 , H01L21/687
Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support including a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.
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公开(公告)号:US11807931B2
公开(公告)日:2023-11-07
申请号:US17961040
申请日:2022-10-06
Applicant: Applied Materials, Inc.
Inventor: Shu-Kwan Lau , Lit Ping Lam , Preetham Rao , Kartik Shah , Ian Ong , Nyi O. Myo , Brian H. Burrows
IPC: C23C16/40 , C23C16/455 , C23C16/46 , C23C16/458
CPC classification number: C23C16/45572 , C23C16/4583 , C23C16/46
Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.
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公开(公告)号:US11177144B2
公开(公告)日:2021-11-16
申请号:US16407670
申请日:2019-05-09
Applicant: Applied Materials, Inc.
Inventor: Shu-Kwan Lau , Zhiyuan Ye , Zuoming Zhu , Koji Nakanishi , Toshiyuki Nakagawa , Nyi O. Myo , Schubert S. Chu
IPC: H05B3/68 , H01L21/67 , B23K26/06 , B23K26/073
Abstract: Embodiments of the present disclosure provide a thermal process chamber that includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate alters temperature profile. The shape of the beam spot produced by the spot heating module can be modified without making changes to the optics of the spot heating module.
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公开(公告)号:US11171023B2
公开(公告)日:2021-11-09
申请号:US15288404
申请日:2016-10-07
Applicant: Applied Materials, Inc.
Inventor: Schubert S. Chu , Douglas E. Holmgren , Kartik Shah , Palamurali Gajendra , Nyi O. Myo , Preetham Rao , Kevin Joseph Bautista , Zhiyuan Ye , Martin A. Hilkene , Errol Antonio C. Sanchez , Richard O. Collins
IPC: H01L21/67 , H01L21/268 , H01L21/324 , H01L21/687
Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.
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公开(公告)号:US10074555B2
公开(公告)日:2018-09-11
申请号:US13786189
申请日:2013-03-05
Applicant: Applied Materials, Inc.
Inventor: Blake Koelmel , Nyi O. Myo
IPC: H01L21/687 , C23C16/458 , C23C16/52 , C23C16/54 , H01J37/32 , H01L21/683
CPC classification number: H01L21/68742 , C23C16/4584 , C23C16/52 , C23C16/54 , H01J37/32733 , H01J2237/2001 , H01L21/6838 , H01L21/68785
Abstract: Embodiments of the present invention provide apparatus and methods for supporting, positioning or rotating a semiconductor substrate during processing. One embodiment of the present invention provides a method for processing a substrate comprising positioning the substrate on a substrate receiving surface of a susceptor, and rotating the susceptor and the substrate by delivering flow of fluid from one or more rotating ports.
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