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    Method for manufacture of ultra-thin film capacitor
    1.
    发明授权
    Method for manufacture of ultra-thin film capacitor 失效
    超薄膜电容器制造方法

    公开(公告)号：US4333808A

    公开(公告)日：1982-06-08

    申请号：US234084

    申请日：1981-02-13

    申请人： Arup Bhattacharyya ,  Wei-Kan Chu ,  James K. Howard ,  Francis W. Wiedman

    发明人： Arup Bhattacharyya ,  Wei-Kan Chu ,  James K. Howard ,  Francis W. Wiedman

    IPC分类号： C23C14/48 ,  H01G4/10 ,  C23C15/00

    CPC分类号： H01G4/10 ,  C23C14/48

    摘要： A suitable substrate is provided to which is applied a metal electrically conductive film electrode. The substrate and electrically conductive electrode film are then exposed to ion beam implantation of O+ or N+ ions to impregnate the surface of the metal electrode with O+ or N+ ions. Thereafter, the substrate and electrically conductive film having implanted O+ or N+ ions is annealed so as to stabilize the oxide structure which has been implanted into the surface of the electrically conductive film to provide an ultra-thin dielectric film.

    摘要翻译： 提供合适的衬底，向其施加金属导电膜电极。 然后将衬底和导电电极膜暴露于O +或N +离子的离子束注入，以用O +或N +离子浸渍金属电极的表面。 然后，将具有注入的O +或N +离子的基板和导电膜退火，以稳定已经注入到导电膜的表面中的氧化物结构，以提供超薄电介质膜。

    Thin film structures and method for fabricating same
    4.
    发明授权
    Thin film structures and method for fabricating same 失效
    薄膜结构及其制造方法

    公开(公告)号：US4206472A

    公开(公告)日：1980-06-03

    申请号：US864182

    申请日：1977-12-27

    申请人： Wei-Kan Chu ,  James K. Howard ,  James F. White

    发明人： Wei-Kan Chu ,  James K. Howard ,  James F. White

    IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/285 ,  H01L21/338 ,  H01L21/768 ,  H01L23/532 ,  H01L29/47 ,  H01L29/872 ,  H01L23/48

    CPC分类号： H01L29/47 ,  H01L21/28537 ,  H01L21/76841 ,  H01L23/53223 ,  H01L29/66848 ,  H01L2924/0002 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/0104 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/19043

    摘要： Thin film structures comprising a layer of aluminum and a material having a tendency to interact with aluminum are separated by an intermediate layer of aluminum having a high aluminum oxide content. The intermediate layer prevents said interaction by acting as a diffusion barrier.Preferred embodiments are directed to silicon semiconductor metallization structures, including Schottky barrier contacts, which comprise a bottom layer of tantalum, or other transition metal, or a metal silicide in contact with a silicon substrate, an intermediate layer of aluminum having a high aluminum oxide content and a top layer of aluminum. The intermediate layer functions as a diffusion barrier between aluminum and the metal, metal silicide or silicon. The preferred embodiments of the invention also includes the process for forming such structures preferably comprising: depositing pure tantalum under high vacuum in evaporation apparatus, substituting aluminum for tantalum in the evaporation apparatus and bleeding-in water, air or oxygen to form the aluminum oxide-rich intermediate aluminum layer and then returning to the high vacuum to deposit pure aluminum. The invention is also applicable to FET or CCD structures where a diffusion barrier for aluminum is required.

    摘要翻译： 包含铝层和具有与铝相互作用的倾向的材料的薄膜结构由具有高氧化铝含量的铝的中间层分离。 中间层通过充当扩散阻挡层来防止所述相互作用。 优选实施例涉及包括钽底部的其他过渡金属或与硅衬底接触的金属硅化物的硅肖特基势垒触点的硅半导体金属化结构，具有高氧化铝含量的铝的中间层 和顶层铝。 中间层用作铝和金属，金属硅化物或硅之间的扩散阻挡层。 本发明的优选实施方案还包括形成这种结构的方法，优选包括：在蒸发装置中在高真空下沉积纯钽，在蒸发装置中用铝代替钽，并在水，空气或氧气中渗出以形成氧化铝 - 丰富的中间铝层，然后返回高真空沉积纯铝。 本发明也适用于需要铝的扩散阻挡层的FET或CCD结构。

    Electronically programmable read only memory
    5.
    发明授权
    Electronically programmable read only memory 失效
    电子可编程只读存储器

    公开(公告)号：US4488262A

    公开(公告)日：1984-12-11

    申请号：US389204

    申请日：1982-06-17

    申请人： Dominique Basire ,  Arup Bhattacharyya ,  James K. Howard ,  Pierre Mollier

    发明人： Dominique Basire ,  Arup Bhattacharyya ,  James K. Howard ,  Pierre Mollier

    IPC分类号： G11C17/00 ,  G11C17/08 ,  G11C17/16 ,  H01L23/525 ,  G11C11/40

    CPC分类号： G11C17/16 ,  H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011

    摘要： An electrically programmable read only memory assembly having cells arranged at the intersections of bit lines (BL1) and word lines (WL1, WL2), wherein each cell is formed of a bipolar transistor provided with a base region (70) and an emitter region (71) covered with a dielectric layer (2) made of an oxide or titanate of a transition metal. The cell in this condition represents a binary 0 information bit. The application of an appropriate voltage of approximately 4 volts to the pads of this cell through its corresponding bit line (BL1) and word line (WL2) causes the dielectric layer to break down and places the bit line in ohmic contact with the emitter, which sets the cell in its second condition representing a binary "1" information bit.

    摘要翻译： 一种电可编程只读存储器组件，其具有布置在位线（BL1）和字线（WL1，WL2）的交点处的单元，其中每个单元由双极晶体管形成，该双极晶体管具有基极区域（70）和发射极区域 71）覆盖有由过渡金属的氧化物或钛酸盐制成的电介质层（2）。 该条件下的单元表示二进制0信息位。 通过其对应的位线（BL1）和字线（WL2）向该单元的焊盘施加大约4伏特的适当电压，导致电介质层破裂并将位线与发射极欧姆接触， 将单元设置为表示二进制“1”信息位的第二条件。

    Magnetoresistive sensor having antiferromagnetic layer for exchange bias
    6.
    发明授权
    Magnetoresistive sensor having antiferromagnetic layer for exchange bias 失效
    具有用于交换偏置的反铁磁层的磁阻传感器

    公开(公告)号：US5315468A

    公开(公告)日：1994-05-24

    申请号：US920943

    申请日：1992-07-28

    申请人： Tsann Lin ,  James K. Howard ,  Cherngye Hwang ,  Daniele Mauri ,  Norbert Staud

    发明人： Tsann Lin ,  James K. Howard ,  Cherngye Hwang ,  Daniele Mauri ,  Norbert Staud

    IPC分类号： G11B5/39 ,  G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/3903 ,  G11B5/3932

    摘要： A magnetoresistive (MR) sensor comprising a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element is described. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer is face-centered-cubic and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.

    摘要翻译： 描述了一种磁阻（MR）传感器，其包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。 反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。 或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。 最初沉积时，Ni-Mn层是面心立方体，表现出很少或没有交换耦合场。 在相对较低温度下的一个退火循环之后，Ni-Mn层是面对中心的四边形，并且显示出增加的晶体学顺序，并提供用于MR元件操作的足够的交换耦合。 向Ni-Mn合金中添加铬提高了耐腐蚀性。

    Method for making a magnetoresistive read transducer
    9.
    发明授权
    Method for making a magnetoresistive read transducer 失效
    制造磁阻读取传感器的方法

    公开(公告)号：US4940511A

    公开(公告)日：1990-07-10

    申请号：US355239

    申请日：1989-05-22

    申请人： Robert E. Fontana, Jr. ,  James K. Howard ,  James H. Lee ,  Haralambos Lefakis

    发明人： Robert E. Fontana, Jr. ,  James K. Howard ,  James H. Lee ,  Haralambos Lefakis

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A magnetoresistive (MR) read transducer comprising a thin film MR layer formed of ferromagnetic material and a nonmagnetic thin film spacer layer in contact with the MR layer. The spacer layer comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide. A thin film of soft magnetic material is deposited in contact with the spacer layer so that a transverse bias is produced in at least a part of the MR layer. A feature of the invention is that the resistivity of the spacer layer can be chosen by selecting the ratio of nichrome to chromium oxide in the spacer layer. In a specific embodiment the spacer layer extends over only the central region of the MR layer. In case the MR layer is a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used to pattern the spacer layer.

    摘要翻译： 磁阻（MR）读取换能器包括由铁磁材料形成的薄膜MR层和与MR层接触的非磁性薄膜间隔层。 间隔层包括选自镍铬合金和镍铬合金与铬氧化物的材料。 沉积与间隔层接触的软磁性材料的薄膜，使得在MR层的至少一部分中产生横向偏压。 本发明的一个特征是间隔层的电阻率可以通过选择间隔层中的镍铬合金与氧化铬的比例来选择。 在具体实施例中，间隔层仅在MR层的中心区域上延伸。 在MR层是镍基合金的情况下，可以使用使用包含硝酸铈铵和乙酸的水溶液的蚀刻剂的湿化学蚀刻工艺来对间隔层进行图案化。