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公开(公告)号：US20060043399A1
公开(公告)日：2006-03-02
申请号：US11208654
申请日：2005-08-23
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/20 , H01L33/405 , H01L33/54 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2924/01322 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting device comprises: a substrate; a light emitting layer; and an ohmic electrode. The substrate has first and second major surfaces and being transparent to light in a first wavelength band. The light emitting layer is provided above the first major surface of the substrate, and the light emitting layer emits light in the first wavelength band. The ohmic electrode is selectively embedded on the second major surface of the substrate and has a surface substantially coplanar with the second major surface.
摘要翻译： 一种半导体发光器件，包括：衬底; 发光层; 和欧姆电极。 衬底具有第一和第二主表面，并且对于第一波长带中的光是透明的。 发光层设置在基板的第一主表面上方，发光层发射第一波长带的光。 欧姆电极被选择性地嵌入到衬底的第二主表面上，并且具有与第二主表面基本上共面的表面。
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公开(公告)号：US20090045425A1
公开(公告)日：2009-02-19
申请号：US12191659
申请日：2008-08-14
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.
摘要翻译： 一种半导体发光器件包括：支撑衬底; 设置在所述支撑基板上的金属层; 设置在所述金属层上并包括发光层的半导体层; 包含半导体的接触层，选择性地设置在所述半导体层和所述金属层之间，并与所述半导体层和所述金属层接触; 以及在不与接触层重叠的位置处在半导体层和金属层之间设置的绝缘膜。
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公开(公告)号：US08426878B2
公开(公告)日：2013-04-23
申请号：US13531806
申请日：2012-06-25
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.
摘要翻译： 一种半导体发光器件包括：支撑衬底; 设置在所述支撑基板上的金属层; 设置在所述金属层上并包括发光层的半导体层; 包含半导体的接触层，选择性地设置在所述半导体层和所述金属层之间，并与所述半导体层和所述金属层接触; 以及在不与接触层重叠的位置处在半导体层和金属层之间设置的绝缘膜。
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公开(公告)号：US20120261707A1
公开(公告)日：2012-10-18
申请号：US13531806
申请日：2012-06-25
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.
摘要翻译： 一种半导体发光器件包括：支撑衬底; 设置在所述支撑基板上的金属层; 设置在所述金属层上并包括发光层的半导体层; 包含半导体的接触层，选择性地设置在所述半导体层和所述金属层之间，并与所述半导体层和所述金属层接触; 以及在不与接触层重叠的位置处在半导体层和金属层之间设置的绝缘膜。
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公开(公告)号：US08237183B2
公开(公告)日：2012-08-07
申请号：US12191659
申请日：2008-08-14
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.
摘要翻译： 一种半导体发光器件包括：支撑衬底; 设置在所述支撑基板上的金属层; 设置在所述金属层上并包括发光层的半导体层; 包含半导体的接触层，选择性地设置在所述半导体层和所述金属层之间，并与所述半导体层和所述金属层接触; 以及在不与接触层重叠的位置处在半导体层和金属层之间设置的绝缘膜。
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公开(公告)号：US09147798B2
公开(公告)日：2015-09-29
申请号：US13421402
申请日：2012-03-15
CPC分类号： H01L33/0079 , H01L33/005 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2933/0016 , H01L2933/0025
摘要： According to one embodiment, a semiconductor light emitting element includes a light emitting element includes a semiconductor stacked body including a light emitting layer, a reflection layer, a support substrate, a first bonding electrode and a second bonding electrode. The reflection layer is made of a metal and has a first surface and a second surface opposite to the first surface. The semiconductor stacked body is provided on a side of the first surface of the reflection layer. The first bonding electrode is provided between the second surface and the support substrate and includes a convex portion projected toward the support substrate and a bottom portion provided around the convex portion in plan view. The second bonding electrode includes a concave portion fitted in the convex portion of the first bonding electrode and is capable of bonding the support substrate and the first bonding electrode.
摘要翻译： 根据一个实施例，半导体发光元件包括发光元件，其包括包括发光层，反射层，支撑衬底，第一接合电极和第二接合电极的半导体层叠体。 反射层由金属制成，具有与第一表面相对的第一表面和第二表面。 半导体层叠体设置在反射层的第一表面的一侧。 第一接合电极设置在第二表面和支撑基板之间，并且包括朝向支撑基板突出的凸部和在俯视图中设置在凸部周围的底部。 第二接合电极包括嵌合在第一接合电极的凸部中并能够接合支撑基板和第一接合电极的凹部。
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公开(公告)号：US06528823B2
公开(公告)日：2003-03-04
申请号：US09961177
申请日：2001-09-24
IPC分类号： H01L2906
CPC分类号： H01L33/305
摘要： A semiconductor light-emitting element, including a double hetero structure formed of III-V group compound semiconductor layers including an active layer acting as a light emitting layer and an n-type cladding layer and a p-type cladding layer having the active layer sandwiched therebetween, a p-type layer laminated on the double hetero structure and containing a concentration of Zn as a dopant, and a Zn diffusion preventing layer interposed between the active layer of the double hetero structure and the p-type layer having a high Zn concentration.
摘要翻译： 一种半导体发光元件，包括由作为发光层的有源层和n型包覆层的III-V族化合物半导体层形成的双异质结构体和具有夹层的活性层的p型覆层 其间层压在双异质结构上并含有Zn作为掺杂剂的浓度的p型层，以及介于双异质结构的有源层和具有高Zn浓度的p型层之间的Zn扩散防止层 。
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公开(公告)号：US5332920A
公开(公告)日：1994-07-26
申请号：US850964
申请日：1992-03-11
IPC分类号： H01L21/761 , H01L21/762 , H01L21/763 , H01L27/088 , H01L27/12 , H01L29/739 , H01L29/70
CPC分类号： H01L21/76264 , H01L21/761 , H01L21/76297 , H01L21/763 , H01L27/088 , H01L27/1203 , H01L29/7394 , H01L21/76275 , H01L21/76283 , H01L21/76286 , H01L2924/10158
摘要： A dielectric isolation substrate comprises a first semiconductor wafer, a second semiconductor wafer bonded on the first semiconductor wafer with a first insulating layer interposed therebetween, a semiconductor layer formed on the second semiconductor wafer, a first groove formed in the semiconductor layer and the second semiconductor wafer so as to reach the first insulating layer, thereby isolating the semiconductor layer and the second semiconductor wafer, and a second insulating layer formed on the side face of the first groove or embedded in the first groove. In this dielectric isolation substrate, a high breakdown voltage element and a low breakdown voltage element are formed in a region isolated by the first groove.
摘要翻译： 绝缘隔离衬底包括：第一半导体晶片;第二半导体晶片，其在第一半导体晶片上具有第一绝缘层，第二绝缘层插入在第二半导体晶片之间，形成在第二半导体晶片上的半导体层，形成在半导体层中的第一沟槽和第二半导体层 晶片，以便到达第一绝缘层，从而隔离半导体层和第二半导体晶片，以及形成在第一凹槽的侧面上或嵌入在第一凹槽中的第二绝缘层。 在该绝缘隔离衬底中，在由第一沟槽隔离的区域中形成高击穿电压元件和低击穿电压元件。
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公开(公告)号：US09318664B2
公开(公告)日：2016-04-19
申请号：US13616580
申请日：2012-09-14
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/405 , H01L33/60
摘要： According to one embodiment, a semiconductor light emitting element includes: a support substrate; a bonding layer provided on the support substrate; an LED layer provided on the bonding layer; and a buffer layer softer than the bonding layer. The buffer layer is placed in one of between the support substrate and the bonding layer and between the bonding layer and the LED layer.
摘要翻译： 根据一个实施例，半导体发光元件包括：支撑基板; 设置在所述支撑基板上的接合层; 设置在所述接合层上的LED层; 和比结合层柔软的缓冲层。 缓冲层被放置在支撑衬底和结合层之间以及结合层和LED层之间的一个中。
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公开(公告)号：US08829488B2
公开(公告)日：2014-09-09
申请号：US13595284
申请日：2012-08-27
CPC分类号： H01L33/0079 , H01L21/187 , H01L24/05 , H01L33/10 , H01L33/16 , H01L33/20 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/351 , H01L2924/00
摘要： Provided is a laminate containing a first compound semiconductor layer; and a second compound semiconductor layer integrally bonded to the first compound semiconductor layer via a bonding layer. A plane A is in the second compound semiconductor layer bonded to a surface where a plane B is in the first compound semiconductor layer, or a surface where a plane B is in the second compound semiconductor layer bonded to a surface where a plane A in the first compound semiconductor layer. The impurity concentration of the bonding layer is 2×1018 cm3 or more.
摘要翻译： 提供含有第一化合物半导体层的层压体; 以及经由接合层与第一化合物半导体层一体接合的第二化合物半导体层。 平面A在与第一化合物半导体层中的平面B的表面接合的第二化合物半导体层中，或者第二化合物半导体层中的平面B与表面中的平面A接合的表面 第一化合物半导体层。 接合层的杂质浓度为2×1018cm3以上。
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