公开(公告)号：US09059738B2

公开(公告)日：2015-06-16

申请号：US13601057

申请日：2012-08-31

申请人： Biwoong Chung ,  Junjin Kong ,  Namshik Kim

发明人： Biwoong Chung ,  Junjin Kong ,  Namshik Kim

IPC分类号： H03M13/00 ,  H03M13/11 ,  G06F11/10

CPC分类号： H03M13/1111 ,  G06F11/1012

摘要： Methods of reading data from storage devices may include reading data stored in the storage device using normal read voltages; performing a first low density parity check (LDPC) decoding based on the read data; generating reliability bits of each of read bits according to the decoding result, the read bits being bits of the read data; and performing a second low density parity check (LDPC) decoding based on the read data and the reliability bits to perform a first error correction on the read data.

摘要翻译： 从存储装置读取数据的方法可以包括使用正常读取电压读取存储在存储装置中的数据; 基于读取的数据执行第一低密度奇偶校验（LDPC）解码; 根据解码结果产生每个读取比特的可靠性位，读取比特是读取数据的比特; 以及基于所述读取数据和所述可靠性位执行第二低密度奇偶校验（LDPC）解码，以对所读取的数据执行第一纠错。

公开(公告)号：US10013211B2

公开(公告)日：2018-07-03

申请号：US15605404

申请日：2017-05-25

申请人： Donghwan Lee ,  Junjin Kong ,  Seongnam Kwon ,  Seungkyung Ro ,  Changkyu Seol ,  Hong Rak Son ,  Pilsang Yoon ,  Donggi Lee ,  Heewon Lee

发明人： Donghwan Lee ,  Junjin Kong ,  Seongnam Kwon ,  Seungkyung Ro ,  Changkyu Seol ,  Hong Rak Son ,  Pilsang Yoon ,  Donggi Lee ,  Heewon Lee

IPC分类号： G11C7/00 ,  G06F3/06 ,  G06N99/00

CPC分类号： G06F3/0659 ,  G06F3/061 ,  G06F3/0619 ,  G06F3/0656 ,  G06F3/0679 ,  G06N20/00 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483

摘要： A storage device may include a nonvolatile memory device, a buffer memory, and a controller. The controller may perform first accesses on the nonvolatile memory device using the buffer memory, collect access result information and access environment information of the first accesses in the buffer memory, and generate an access classifier that predicts a result of a second access to the nonvolatile memory device by performing machine learning based on the access result information and the access environment information collected in the buffer memory.

公开(公告)号：US09437310B2

公开(公告)日：2016-09-06

申请号：US14827930

申请日：2015-08-17

申请人： Eun Chu Oh ,  Hong Rak Son ,  Junjin Kong

发明人： Eun Chu Oh ,  Hong Rak Son ,  Junjin Kong

IPC分类号： G11C16/10 ,  G11C16/16 ,  G11C11/56 ,  G11C16/34 ,  G11C16/26

CPC分类号： G11C16/16 ,  G11C11/5635 ,  G11C16/26 ,  G11C16/3468

摘要： A method of operating a memory system including a nonvolatile memory including a memory block, and a memory controller including an erase control unit, includes performing pre-reading a plurality of memory cells connected to a selected word line of the memory block, generating an off cell count based on the pre-reading result, by operation of the erase control unit, comparing the off cell count with a reference value to generate a comparison result, and changing an erase operation condition based on the comparison result, by operation of the nonvolatile memory, and erasing the memory block according to the changed erase operation condition.

摘要翻译： 一种操作包括包括存储器块的非易失性存储器的存储器系统的方法和包括擦除控制单元的存储器控​​制器，包括执行预读取连接到所述存储器块的选定字线的多个存储器单元，产生关断 基于预读取结果的单元计数，通过擦除控制单元的操作，将关闭单元计数与参考值进行比较以产生比较结果，以及通过非易失性存储器的操作来改变基于比较结果的擦除操作条件 存储器，并根据改变的擦除操作条件擦除存储器块。

公开(公告)号：US09135111B2

公开(公告)日：2015-09-15

申请号：US13431426

申请日：2012-03-27

申请人： Eun Chu Oh ,  KyoungLae Cho ,  Mankeun Seo ,  Junjin Kong

发明人： Eun Chu Oh ,  KyoungLae Cho ,  Mankeun Seo ,  Junjin Kong

IPC分类号： G11C29/00 ,  G06F11/00 ,  G11C11/34 ,  G11C8/00 ,  G06F11/10 ,  G11C5/02 ,  H01L27/115 ,  H01L27/06 ,  H01L27/28

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G06F11/1044 ,  G06F11/1048 ,  G06F11/1072 ,  G11C5/02 ,  G11C5/025 ,  G11C29/70 ,  G11C29/82 ,  G11C29/883 ,  H01L27/0688 ,  H01L27/11514 ,  H01L27/11521 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/281

摘要： Example embodiments relate to a bad area managing method of a nonvolatile memory device. The nonvolatile memory device may include a plurality of memory blocks and each block may contain memory layers stacked on a substrate. According to example embodiments, a method includes accessing one of the memory blocks, judging whether the accessed memory block includes at least one memory layer containing a bad memory cell. If a bad memory cell is detected, the method may further include configuring the memory device to treat the at least one memory layer of the accessed memory block as a bad area.

摘要翻译： 示例性实施例涉及非易失性存储器件的不良区域管理方法。 非易失性存储器件可以包括多个存储器块，并且每个块可以包含堆叠在衬底上的存储器层。 根据示例实施例，一种方法包括访问存储器块之一，判断所访问的存储器块是否包括至少一个包含坏存储器单元的存储器层。 如果检测到不良存储器单元，则该方法还可以包括配置存储器件以将所访问的存储器块的至少一个存储器层视为不良区域。

公开(公告)号：US08751900B2

公开(公告)日：2014-06-10

申请号：US13106892

申请日：2011-05-13

申请人： Yong June Kim ,  Hong Rak Son ,  Seonghyeog Choi ,  Junjin Kong ,  Yongtaew Yim ,  Jaehong Kim ,  KyoungLae Cho ,  Wootae Chang

发明人： Yong June Kim ,  Hong Rak Son ,  Seonghyeog Choi ,  Junjin Kong ,  Yongtaew Yim ,  Jaehong Kim ,  KyoungLae Cho ,  Wootae Chang

IPC分类号： G11C29/00 ,  H03M13/00

CPC分类号： G06F11/106 ,  H03M13/1102 ,  H03M13/136 ,  H03M13/152 ,  H03M13/155 ,  H03M13/2909 ,  H03M13/618

摘要： A storage device includes a non-volatile memory device outputting read data from a source area and a memory controller configured to execute an ECC operation on a plurality of vectors in the read data and to write the error-corrected read data into target area of the non-volatile memory device. The memory controller declares that a vector corresponding to a clean area is decoding pass without using a flag bit among the plurality of vectors during the error correction operation.

摘要翻译： 存储装置包括从源区域输出读取数据的非易失性存储器装置和被配置为对读取数据中的多个向量执行ECC操作并将经纠错的读取数据写入到目标区域中的存储器控​​制器 非易失性存储器件。 存储器控制器声明对应于清洁区域的矢量是在纠错操作期间不使用多个矢量中的标志位的解码通过。

公开(公告)号：US08116141B2

公开(公告)日：2012-02-14

申请号：US12558627

申请日：2009-09-14

申请人： Han Woong Yoo ,  Seung-Hwan Song ,  Junjin Kong ,  Jaehong Kim

发明人： Han Woong Yoo ,  Seung-Hwan Song ,  Junjin Kong ,  Jaehong Kim

IPC分类号： G11C11/34

CPC分类号： G11C16/26 ,  G11C16/3427

摘要： A distribution analyzing method for a nonvolatile memory device having memory cells exhibiting overlapping first and second threshold voltage distributions includes; detecting a degree of overlap between the first and second threshold voltage distributions by reading data stored in the memory cells and determining read index data from the read data, and estimating a distribution characteristic for at least one of the overlapping threshold voltage distributions using the read index data.

摘要翻译： 一种具有显示重叠的第一和第二阈值电压分布的存储单元的非易失性存储器件的分布分析方法包括： 通过读取存储在存储单元中的数据并根据读取的数据确定读取的索引数据来检测第一和第二阈值电压分布之间的重叠程度，并且使用读取的索引来估计至少一个重叠阈值电压分布的分布特性 数据。

公开(公告)号：US09892796B2

公开(公告)日：2018-02-13

申请号：US15398602

申请日：2017-01-04

申请人： Dongsup Jin ,  Pilsang Yoon ,  Hong Rak Son ,  Junjin Kong ,  Young-Seop Shim ,  Jinman Han

发明人： Dongsup Jin ,  Pilsang Yoon ,  Hong Rak Son ,  Junjin Kong ,  Young-Seop Shim ,  Jinman Han

IPC分类号： G11C7/00 ,  G11C16/26 ,  G06F3/06 ,  G11C16/04

CPC分类号： G11C16/26 ,  G06F3/061 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G11C7/02 ,  G11C11/5642 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/28 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50004 ,  G11C2029/0409

摘要： A method for controlling a nonvolatile memory device includes requesting a plurality of first sampling values from the nonvolatile memory device, each of the first sampling values representing the number of memory cells having a threshold voltage between a first sampling read voltage and a second sampling read voltage. The first sampling values are processed through a non-linear filtering operation to estimate the number of memory cells having the threshold voltage between the first sampling read voltage and the second sampling read voltage.

公开(公告)号：US09837156B2

公开(公告)日：2017-12-05

申请号：US14640653

申请日：2015-03-06

申请人： Changkyu Seol ,  Junjin Kong ,  JongHa Kim ,  Hyejeong So ,  Hong Rak Son ,  Seonghyeog Choi

发明人： Changkyu Seol ,  Junjin Kong ,  JongHa Kim ,  Hyejeong So ,  Hong Rak Son ,  Seonghyeog Choi

IPC分类号： G06F3/06 ,  G11C16/10 ,  G11C7/10 ,  G11C11/56

CPC分类号： G11C16/10 ,  G11C7/1006 ,  G11C11/5628 ,  G11C16/102

摘要： The operating method of the storage device includes receiving write data to be written at the plurality of memory cells; determining whether the received write data is LSB data to be written at the plurality of memory cells; and encoding the write data according to the determination. The write data is encoded according to the write data when the write data is LSB data to be written at the plurality of memory cells. The write data is encoded according to the write data and encoding data of lower data of the write data to be written at the plurality of memory cells when the write data is not LSB data to be written at the plurality of memory cells.

公开(公告)号：US09478300B2

公开(公告)日：2016-10-25

申请号：US14883922

申请日：2015-10-15

申请人： Kwanghoon Kim ,  Younggeon Yoo ,  Junjin Kong

发明人： Kwanghoon Kim ,  Younggeon Yoo ,  Junjin Kong

IPC分类号： G11C11/34 ,  G11C16/26 ,  G11C16/04

CPC分类号： G11C16/26 ,  G11C7/1006 ,  G11C11/5642 ,  G11C16/0483

摘要： An operation method of a nonvolatile memory system in accordance with example embodiments of inventive concepts includes detecting an on-cell count of the memory cells using a sampling start voltage, comparing the detected on-cell count with a reference value, setting a plurality of sampling voltages based on the comparison result, performing a sampling operation with respect to the memory cells using the sampling voltages, and detecting an optimum read voltage for distinguishing any one program state among the program states based on a result of the sampling operation.

摘要翻译： 根据本发明的示例性实施例的非易失性存储器系统的操作方法包括使用采样开始电压来检测存储器单元的单元计数，将检测到的单元计数与参考值进行比较，设置多个采样 基于比较结果的电压，使用采样电压对存储单元执行采样操作，并且基于采样操作的结果，检测用于区分程序状态中的任何一个程序状态的最佳读取电压。

公开(公告)号：US09355724B2

公开(公告)日：2016-05-31

申请号：US14076299

申请日：2013-11-11

申请人： Eun Chu Oh ,  Junjin Kong ,  Hong Rak Son

发明人： Eun Chu Oh ,  Junjin Kong ,  Hong Rak Son

IPC分类号： G11C16/04 ,  G11C11/56 ,  G11C16/26 ,  G11C16/16 ,  G11C16/14

CPC分类号： G11C16/04 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/14 ,  G11C16/16 ,  G11C16/26

摘要： A method of operating a nonvolatile memory device configured to erase a memory block in sub-block units comprises detecting state information of unselected sub-blocks associated with a selected sub-block comprising selected memory cells, adjusting a read bias of the selected memory cells based on the state information, and reading data from the selected memory cells according to the adjusted read bias. The state information indicates a number of the unselected sub-blocks having a programmed state or an erased state.

摘要翻译： 一种操作配置成以子块为单位擦除存储器块的非易失性存储器件的方法包括：检测与包括所选存储器单元的所选子块相关联的未选择子块的状态信息，基于所选存储器单元的读偏置 在状态信息上，以及根据所调整的读取偏差从所选存储单元读取数据。 状态信息指示具有编程状态或擦除状态的未选择子块的数量。