Method of fabricating heterojunction bipolar transistor
    1.
    发明申请
    Method of fabricating heterojunction bipolar transistor 有权
    异质结双极晶体管的制造方法

    公开(公告)号:US20060099767A1

    公开(公告)日:2006-05-11

    申请号:US11227503

    申请日:2005-09-15

    IPC分类号: H01L21/331

    CPC分类号: H01L29/66318 H01L29/7371

    摘要: Provided is a method of fabricating a heterojunction bipolar transistor (HBT). The method includes: sequentially depositing a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter capping layer on a substrate; forming an emitter electrode on the emitter capping layer; forming a mesa type emitter to expose the base layer by sequentially etching the emitter capping layer and the emitter layer using the emitter electrode as an etch mask in vertical and negative-sloped directions to the substrate, respectively; and forming a base electrode on the exposed base layer using the emitter electrode as a mask in self-alignment with the emitter electrode. In this method, a distance between the mesa type emitter and the base electrode can be minimized and reproducibly controlled. Also, a self-aligned device with an excellent high-frequency characteristic can be embodied.

    摘要翻译: 提供了一种制造异质结双极晶体管(HBT)的方法。 该方法包括:在衬底上依次沉积副集电极层,集电极层,基极层,发射极层和发射极覆盖层; 在发射极盖层上形成发射电极; 通过使用发射极电极作为蚀刻掩模,分别在垂直和负向倾斜的方向上依次蚀刻发射极覆盖层和发射极层来形成台面型发射极以暴露基底层; 以及使用发射电极作为与发射极电极自对准的掩模,在所述暴露的基底层上形成基极。 在这种方法中,台面型发射极和基极之间的距离可以被最小化并可重复地控制。 此外,可以实现具有优异的高频特性的自对准装置。

    CONTROL CIRCUIT OF DC-DC CONVERTER
    3.
    发明申请
    CONTROL CIRCUIT OF DC-DC CONVERTER 有权
    DC-DC转换器的控制电路

    公开(公告)号:US20080106243A1

    公开(公告)日:2008-05-08

    申请号:US11928845

    申请日:2007-10-30

    IPC分类号: G05F1/00

    摘要: A control circuit of a DC-DC converter is provided. A mode selection section selects an ACF or LLC mode. A soft start section generates a soft start signal in the ACF and LLC modes. A PWM comparison section compares a current detection signal with a feedback signal, a feedback reference signal and the soft start signal in the ACF mode, and generates a PWM signal based on a comparison result. A selection section selects the PWM signal of the PWM comparison section in the ACF mode. A clock generation section generates a clock signal having a fixed frequency in the ACF mode, and generates a clock signal having a frequency based on an operating current and the soft start signal in the LLC mode. A latch section maintains the PWM signal in response to the clock signal in the ACF mode and maintains the clock signal in the LLC mode.

    摘要翻译: 提供DC-DC转换器的控制电路。 模式选择部分选择ACF或LLC模式。 软启动部分在ACF和LLC模式下产生软启动信号。 PWM比较部分将电流检测信号与ACF模式中的反馈信号,反馈参考信号和软启动信号进行比较,并且基于比较结果生成PWM信号。 选择部分在ACF模式下选择PWM比较部分的PWM信号。 时钟产生部分以ACF模式产生具有固定频率的时钟信号,并且在LLC模式下产生具有基于工作电流的频率和软启动信号的时钟信号。 锁存部分响应于ACF模式中的时钟信号而保持PWM信号,并将时钟信号保持在LLC模式。

    Vertical diode formation in SOI application
    4.
    发明申请
    Vertical diode formation in SOI application 有权
    SOI应用中的垂直二极管形成

    公开(公告)号:US20060284260A1

    公开(公告)日:2006-12-21

    申请号:US11158022

    申请日:2005-06-21

    IPC分类号: H01L29/94

    摘要: A method for making a semiconductor device is provided. The method comprises (a) providing a semiconductor stack comprising a semiconductor substrate (203), a first semiconductor layer (205), and a first dielectric layer (207) disposed between the substrate and the first semiconductor layer; (b) forming a first trench in the first dielectric layer which exposes a portion of the substrate; (c) forming a first doped region (209) in the exposed portion of the substrate; and (d) forming anode (211) and cathode (213) regions in the first implant region.

    摘要翻译: 提供一种制造半导体器件的方法。 该方法包括(a)提供包括半导体衬底(203),第一半导体层(205)和设置在衬底和第一半导体层之间的第一电介质层(207)的半导体堆叠; (b)在所述第一电介质层中形成暴露所述衬底的一部分的第一沟槽; (c)在所述衬底的暴露部分中形成第一掺杂区域(209); 和(d)在第一注入区域中形成阳极(211)和阴极(213)区域。

    Driving method of external electrode fluorescent lamp inverter for backlight

    公开(公告)号:US20060250095A1

    公开(公告)日:2006-11-09

    申请号:US11320794

    申请日:2005-12-30

    IPC分类号: H05B41/16

    CPC分类号: H05B41/2825 Y02B20/185

    摘要: A driving method of external electrode fluorescent lamp inverter for backlight. In the driving method, a square wave voltage frequency for driving the external electrode fluorescent lamp is applied to the primary side of a transformer in the region whose frequency is substantially ½ of the resonant frequency which is determined by the capacitance of the external electrode fluorescent lamp and the leakage inductance of the transformer. Then, the external electrode fluorescent lamp is caused to emit light by the self-discharge to thereby obtain high efficiency and high luminance. The driving method of external electrode fluorescent lamp inverter for backlight includes applying a square wave voltage for driving an external electrode fluorescent lamp to the primary side of a transformer; and applying the square wave voltage to the primary side of transformer in a region where the frequency thereof is substantially ½ of a resonant frequency, which is determined by the capacitance of the external electrode fluorescent lamp and the leakage inductance of the transformer, and thus causing the external electrode fluorescent lamp to emit light by the self-discharge.

    Process for forming an electronic device including a fin-type structure
    7.
    发明申请
    Process for forming an electronic device including a fin-type structure 有权
    用于形成包括翅片型结构的电子设备的方法

    公开(公告)号:US20070161171A1

    公开(公告)日:2007-07-12

    申请号:US11328668

    申请日:2006-01-10

    IPC分类号: H01L21/8234 H01L21/336

    摘要: A process for forming an electronic device can include forming a semiconductor fin of a first height for a fin-type structure and removing a portion of the semiconductor fin such that the semiconductor fin is shortened to a second height. In accordance with specific embodiment a second semiconductor fin can be formed, each of the first and the second semiconductor fins having a different height representing a channel width. In accordance with another specific embodiment a second and a third semiconductor fin can be formed, each of the first, the second and the third semiconductor fins having a different height representing a channel width.

    摘要翻译: 用于形成电子器件的工艺可以包括形成用于鳍型结构的第一高度的半导体鳍片,并且去除半导体鳍片的一部分,使得半导体鳍片缩短到第二高度。 根据具体实施例,可以形成第二半导体鳍片,第一和第二半导体鳍片中的每一个具有表示沟道宽度的不同高度。 根据另一具体实施例,可以形成第二和第三半导体鳍片,第一,第二和第三半导体鳍片中的每一个具有代表沟道宽度的不同高度。

    Piezoelectric actuator drive system

    公开(公告)号:US20060061232A1

    公开(公告)日:2006-03-23

    申请号:US10994459

    申请日:2004-11-23

    IPC分类号: H01L41/09

    CPC分类号: H02N2/0075 H02N2/147

    摘要: Disclosed herein is a piezoelectric actuator drive system for forward or backward driving a piezoelectric actuator for zooming and/or focusing in a camera module. The piezoelectric actuator drive system comprises a power supply for supplying an operating voltage, a drive controller for controlling generation of a forward/backward drive signal for a piezoelectric actuator in response to an operation ON select signal and a forward/backward driving select signal, a clock generator for generating a first clock signal in response to the operating voltage from the power supply, and a drive signal generator for generating and supplying the forward or backward drive signal to the piezoelectric actuator in response to the first clock signal from the clock generator and the operating voltage from the power supply under the forward/backward drive signal generation control of the drive controller.