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    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support
    4.
    发明授权
    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support 失效
    用于减少沿着衬底支撑件的可移动轴夹带异物的装置

    公开(公告)号：US07582167B2

    公开(公告)日：2009-09-01

    申请号：US11866505

    申请日：2007-10-03

    申请人： Andrzej Kaszuba ,  Sophia M. Velastegui ,  Visweswaren Sivaramakrishnan ,  Pyongwon Yim ,  Mario David Silvetti ,  Tom K. Cho ,  Indrajit Lahiri ,  Surinder S. Bedi

    发明人： Andrzej Kaszuba ,  Sophia M. Velastegui ,  Visweswaren Sivaramakrishnan ,  Pyongwon Yim ,  Mario David Silvetti ,  Tom K. Cho ,  Indrajit Lahiri ,  Surinder S. Bedi

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/67126 ,  C23C16/4401

    摘要： In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

    摘要翻译： 在一个实施例中，本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。 在一个实施例中，保护环包括大致环形的保护环，其定位在形成在套筒内的步骤中，该套筒环绕轴。 保护环被定位成基本上密封将轴与套筒分开的间隙，使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。 在另一个实施例中，保护环包括具有内周边和外周边的基部，连接到内周边的第一凸缘，联接到外周边的第二凸缘和将第一凸缘与第二凸缘分开的连续通道 。 第一凸缘适于用作容纳轴的位移的弹簧。

    Gas delivery system for semiconductor processing
    5.
    发明授权
    Gas delivery system for semiconductor processing 有权
    用于半导体加工的气体输送系统

    公开(公告)号：US07498268B2

    公开(公告)日：2009-03-03

    申请号：US11552129

    申请日：2006-10-23

    申请人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

    发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

    IPC分类号： H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/67017 ,  H01L21/67109

    摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

    摘要翻译： 本发明旨在改善半导体处理系统中的缺陷性能。 在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。 至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。 该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。 隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。 隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support
    6.
    发明授权
    Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support 失效
    用于减少沿着衬底支撑件的可移动轴夹带异物的装置

    公开(公告)号：US07279049B2

    公开(公告)日：2007-10-09

    申请号：US10775769

    申请日：2004-02-05

    申请人： Andrzej Kaszuba ,  Sophia M. Velastegui ,  Visweswaren Sivaramakrishnan ,  Pyongwon Yim ,  Mario David Silvetti ,  Tom K. Cho ,  Indrajit Lahiri ,  Surinder S. Bedi

    发明人： Andrzej Kaszuba ,  Sophia M. Velastegui ,  Visweswaren Sivaramakrishnan ,  Pyongwon Yim ,  Mario David Silvetti ,  Tom K. Cho ,  Indrajit Lahiri ,  Surinder S. Bedi

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/67126 ,  C23C16/4401

    摘要： In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

    摘要翻译： 在一个实施例中，本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。 在一个实施例中，保护环包括大致环形的保护环，其定位在形成在套筒内的步骤中，该套筒环绕轴。 保护环被定位成基本上密封将轴与套筒分开的间隙，使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。 在另一个实施例中，保护环包括具有内周边和外周边的基部，连接到内周边的第一凸缘，联接到外周边的第二凸缘和将第一凸缘与第二凸缘分开的连续通道 。 第一凸缘适于用作容纳轴的位移的弹簧。

    High density plasma CVD chamber
    7.
    发明授权
    High density plasma CVD chamber 失效
    高密度等离子体CVD室

    公开(公告)号：US07074298B2

    公开(公告)日：2006-07-11

    申请号：US10150581

    申请日：2002-05-17

    申请人： Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Shigeru Takehiro ,  Masayoshi Nohira ,  Tetsuya Ishikawa ,  Ndanka O. Mukuti

    发明人： Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Shigeru Takehiro ,  Masayoshi Nohira ,  Tetsuya Ishikawa ,  Ndanka O. Mukuti

    IPC分类号： H01L21/306 ,  C23C16/00

    CPC分类号： H01J37/32522 ,  C23C16/4401 ,  C23C16/507 ,  H01J37/321

    摘要： The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is at least about 0.15, more desirably about 0.2–0.25.

    摘要翻译： 本发明涉及等离子体化学气相沉积室的设计，其提供了在基底上形成薄的CVD膜的更均匀的条件。 在一个实施例中，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。 该室包括底部，侧壁和设置在侧壁顶部的圆顶。 圆顶具有圆顶，并具有限定腔直径的侧部。 顶部RF线圈设置在圆顶顶部上方。 侧面RF线圈邻近圆顶的侧部设置。 侧RF线圈通过线圈分离与顶部RF线圈间隔开。 线圈分离与室直径的比率至少为约0.15，更优选为约0.2-0.25。

    COMPOUND LIFT PIN TIP WITH TEMPERATURE COMPENSATED ATTACHMENT FEATURE
    8.
    发明申请
    COMPOUND LIFT PIN TIP WITH TEMPERATURE COMPENSATED ATTACHMENT FEATURE 审中-公开
    具有温度补偿附件功能的复合提升针尖

    公开(公告)号：US20110033620A1

    公开(公告)日：2011-02-10

    申请号：US12848782

    申请日：2010-08-02

    申请人： Alexander S. Polyak ,  Tom K. Cho ,  Oscar Gomez

    发明人： Alexander S. Polyak ,  Tom K. Cho ,  Oscar Gomez

    IPC分类号： C23C16/458 ,  C23C16/00

    CPC分类号： C23C16/4586 ,  H01L21/68742

    摘要： A method and apparatus for a lift pin is described. In one embodiment, a lift pin head is described. The lift pin head includes a base member having a body made of a first material having a first coefficient of thermal expansion, and a tip disposed on the base member, the base member having a body made of a second material that is flexible at room temperature and having a second coefficient of thermal expansion, the first coefficient of thermal expansion being less than the second coefficient of thermal expansion.

    摘要翻译： 描述了用于升降销的方法和装置。 在一个实施例中，描述了提升销头。 提升销头包括具有由具有第一热膨胀系数的第一材料制成的主体的基座构件和设置在基座构件上的尖端，所述基座构件具有由在室温下是柔性的第二材料制成的主体 并且具有第二热膨胀系数，所述第一热膨胀系数小于所述第二热膨胀系数。

    Methods of uniformity control for low flow process and chamber to chamber matching
    9.
    发明授权
    Methods of uniformity control for low flow process and chamber to chamber matching 有权
    低流程和室到室匹配的均匀性控制方法

    公开(公告)号：US07829145B2

    公开(公告)日：2010-11-09

    申请号：US12256405

    申请日：2008-10-22

    申请人： Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Tom K. Cho ,  Daemian Raj

    发明人： Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Tom K. Cho ,  Daemian Raj

    IPC分类号： C23C16/00

    CPC分类号： C23C16/4405 ,  C23C16/45565 ,  C23C16/45574

    摘要： Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the method for processing a substrate includes delivering a processing gas into a chemical vapor deposition chamber through a first gas pathway that includes flow through a first plurality of apertures in a blocker plate, the blocker plate creating a pressure drop of at least approximately 0.8 torr thereacross, reacting the processing gas to deposit a material on a substrate surface, removing the substrate from the chamber, delivering a cleaning gas into the chamber through a second gas pathway around the blocker plate bypassing the blocker plate and through a second plurality of apertures formed in the blocker plate, and reacting the cleaning gases with deposits within the chamber to etch the deposits from the chamber.

    摘要翻译： 公开了将气体分配到处理室中的装置和方法。 在一个实施例中，用于处理衬底的方法包括通过第一气体通路将处理气体输送到化学气相沉积室，所述第一气体通路包括通过阻挡板中的第一多个孔的流动，所述阻挡板产生至少一个压降 使处理气体反应在衬底表面上沉积材料，从腔室中移除衬底，通过围绕阻挡板的第二气体通道将清洁气体输送到室中，并绕过第二个多个 形成在阻挡板中的孔，并使清洁气体与腔室内的沉积物反应，以蚀刻来自腔室的沉积物。

    GAS DISTRIBUTION BLOCKER APPARATUS
    10.
    发明申请
    GAS DISTRIBUTION BLOCKER APPARATUS 有权
    气体分配阻塞装置

    公开(公告)号：US20100136216A1

    公开(公告)日：2010-06-03

    申请号：US12627578

    申请日：2009-11-30

    申请人： Lun Tsuei ,  Alan Tso ,  Tom K. Cho ,  Brian Sy-Yuan Shieh

    发明人： Lun Tsuei ,  Alan Tso ,  Tom K. Cho ,  Brian Sy-Yuan Shieh

    IPC分类号： C23C16/52 ,  C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/45559 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead.

    摘要翻译： 本发明的实施方案通常提供用于改变在处理室的喷头上提供的工艺气体的流量和压力差的装置和方法，以提供跨过设置在其中的衬底的表面的改进的沉积均匀性。 在一个实施例中，阻挡板设置在背板和喷头之间。 在一个实施例中，阻挡板和喷头之间的距离是可调节的。 在另一个实施例中，阻挡板具有非平面的表面轮廓。 在另一个实施例中，区域阻滞板设置在背板和喷头之间。 在另一个实施例中，中间阻滞板和外围阻滞板设置在背板和喷头之间。