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公开(公告)号：US09558947B2
公开(公告)日：2017-01-31
申请号：US13976082
申请日：2011-12-29
申请人： Charles H. Wallace , Hossam M. Abdallah , Elliot N. Tan , Swaminathan Sivakumar , Oleg Golonzka , Robert M. Bigwood
发明人： Charles H. Wallace , Hossam M. Abdallah , Elliot N. Tan , Swaminathan Sivakumar , Oleg Golonzka , Robert M. Bigwood
IPC分类号： H01L21/312 , H01L21/263 , H01L21/027 , G03F7/20 , H01L21/02 , H01L27/02 , G03F1/50 , G03F7/00 , G03F7/40
CPC分类号： H01L24/09 , G03F1/50 , G03F1/70 , G03F7/0035 , G03F7/16 , G03F7/40 , G03F7/70741 , H01L21/02345 , H01L21/0273 , H01L21/2633 , H01L21/30604 , H01L21/3086 , H01L27/0207 , H01L2224/0801 , H01L2224/08053 , H01L2224/0912 , H01L2924/14
摘要： Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may he arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.
摘要翻译： 公开了用于通过将其分解（分解）成多个单向目标特征来实现二维目标光刻特征/图案的技术，其在聚合时基本上（例如，完全）代表原始目标特征而不留下未表示的余数（例如， 全数量的单向目标特征）。 单向目标特征可以任意分组，使得在分组内，所有单向目标特征共享共同的目标宽度值。 在提供多个这样的分组的情况下，个体分组可以具有或可以不具有相同的共同目标宽度值。 在一些情况下，提供一系列光罩，每个掩模版具有与单向目标特征的分组相关的掩模图案。 基本上（例如，完全）通过聚集的标线系列曝光光致抗蚀剂材料产生原始目标特征/图案。 图案分解技术可以集成到任何数量的图案化工艺中，例如光刻冷冻 - 光刻蚀刻和光蚀刻 - 光蚀刻图案化工艺。
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公开(公告)号：US20140117488A1
公开(公告)日：2014-05-01
申请号：US13976082
申请日：2011-12-29
申请人： Charles H. Wallace , Hossam M. Abdallah , Elliot N. Tan , Swaminathan Sivakumar , Oleg Golonzka , Robert M. Bigwood
发明人： Charles H. Wallace , Hossam M. Abdallah , Elliot N. Tan , Swaminathan Sivakumar , Oleg Golonzka , Robert M. Bigwood
IPC分类号： H01L21/263 , H01L27/02 , H01L21/02 , G03F7/20
CPC分类号： H01L24/09 , G03F1/50 , G03F1/70 , G03F7/0035 , G03F7/16 , G03F7/40 , G03F7/70741 , H01L21/02345 , H01L21/0273 , H01L21/2633 , H01L21/30604 , H01L21/3086 , H01L27/0207 , H01L2224/0801 , H01L2224/08053 , H01L2224/0912 , H01L2924/14
摘要： Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may he arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.
摘要翻译： 公开了用于通过将其分解（分解）成多个单向目标特征来实现二维目标光刻特征/图案的技术，其在聚合时基本上（例如，完全）代表原始目标特征而不留下未表示的余数（例如， 全数量的单向目标特征）。 单向目标特征可以任意分组，使得在分组内，所有单向目标特征共享共同的目标宽度值。 在提供多个这样的分组的情况下，个体分组可以具有或可以不具有相同的共同目标宽度值。 在一些情况下，提供一系列光罩，每个掩模版具有与单向目标特征的分组相关的掩模图案。 基本上（例如，完全）通过聚集的标线系列曝光光致抗蚀剂材料产生原始目标特征/图案。 图案分解技术可以集成到任何数量的图案化工艺中，例如光刻冷冻 - 光刻蚀刻和光蚀刻 - 光蚀刻图案化工艺。
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公开(公告)号：US20130320456A1
公开(公告)日：2013-12-05
申请号：US13995678
申请日：2011-12-22
IPC分类号： H01L21/28 , H01L27/085
CPC分类号： H01L21/76897 , H01L21/28008 , H01L21/30625 , H01L21/32 , H01L21/76805 , H01L21/823431 , H01L21/823437 , H01L21/823468 , H01L21/823475 , H01L21/823481 , H01L23/535 , H01L27/0207 , H01L27/088 , H01L27/0886 , H01L29/0653 , H01L29/66545
摘要： Gate aligned contacts and methods of forming gate aligned contacts are described. For example, a method of fabricating a semiconductor structure includes forming a plurality of gate structures above an active region formed above a substrate. The gate structures each include a gate dielectric layer, a gate electrode, and sidewall spacers. A plurality of contact plugs is formed, each contact plug formed directly between the sidewall spacers of two adjacent gate structures of the plurality of gate structures. A plurality of contacts is formed, each contact formed directly between the sidewall spacers of two adjacent gate structures of the plurality of gate structures. The plurality of contacts and the plurality of gate structures are formed subsequent to forming the plurality of contact plugs.
摘要翻译： 描述门对齐的触点和形成栅极对准触点的方法。 例如，制造半导体结构的方法包括在形成在衬底上方的有源区上方形成多个栅极结构。 栅极结构各自包括栅极介电层，栅电极和侧壁间隔物。 形成多个接触插塞，每个接触插塞直接形成在多个门结构的两个相邻门结构的侧壁间隔件之间。 形成多个触点，每个触点直接形成在多个栅极结构的两个相邻栅极结构的侧壁间隔件之间。 在形成多个接触插塞之后形成多个触点和多个栅极结构。
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公开(公告)号：US09716037B2
公开(公告)日：2017-07-25
申请号：US13995678
申请日：2011-12-22
IPC分类号： H01L21/768 , H01L27/088 , H01L21/306 , H01L27/02 , H01L21/8234 , H01L21/28 , H01L29/66
CPC分类号： H01L21/76897 , H01L21/28008 , H01L21/30625 , H01L21/32 , H01L21/76805 , H01L21/823431 , H01L21/823437 , H01L21/823468 , H01L21/823475 , H01L21/823481 , H01L23/535 , H01L27/0207 , H01L27/088 , H01L27/0886 , H01L29/0653 , H01L29/66545
摘要： Gate aligned contacts and methods of forming gate aligned contacts are described. For example, a method of fabricating a semiconductor structure includes forming a plurality of gate structures above an active region formed above a substrate. The gate structures each include a gate dielectric layer, a gate electrode, and sidewall spacers. A plurality of contact plugs is formed, each contact plug formed directly between the sidewall spacers of two adjacent gate structures of the plurality of gate structures. A plurality of contacts is formed, each contact formed directly between the sidewall spacers of two adjacent gate structures of the plurality of gate structures. The plurality of contacts and the plurality of gate structures are formed subsequent to forming the plurality of contact plugs.
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公开(公告)号：US20140191372A1
公开(公告)日：2014-07-10
申请号：US13976077
申请日：2011-12-29
CPC分类号： H01L21/02587 , H01L21/02658 , H01L21/0337 , H01L21/28 , H01L21/76816 , H01L29/0684 , Y10S438/942
摘要： Spacer-based pitch division lithography techniques are disclosed that realize pitches with both variable line widths and variable space widths, using a single spacer deposition. The resulting feature pitches can be at or below the resolution limit of the exposure system being used, but they need not be, and may be further reduced (e.g., halved) as many times as desired with subsequent spacer formation and pattern transfer processes as described herein. Such spacer-based pitch division techniques can be used, for instance, to define narrow conductive runs, metal gates and other such small features at a pitch smaller than the original backbone pattern.
摘要翻译： 公开了使用单个间隔物沉积来实现具有可变线宽度和可变空间宽度的间距的基于间隔物的间距光刻技术。 所得到的特征间距可以处于或低于所使用的曝光系统的分辨率极限，但是它们不需要并且可以进一步减少（例如，减半），如所需的随后的间隔物形成和图案转移过程所需的多次 这里。 这种基于间隔物的螺距分割技术可以用于例如以比原始骨架图案小的间距来限定窄导电线，金属栅极和其它这样的小特征。
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公开(公告)号：US08860184B2
公开(公告)日：2014-10-14
申请号：US13976077
申请日：2011-12-29
CPC分类号： H01L21/02587 , H01L21/02658 , H01L21/0337 , H01L21/28 , H01L21/76816 , H01L29/0684 , Y10S438/942
摘要： Spacer-based pitch division lithography techniques are disclosed that realize pitches with both variable line widths and variable space widths, using a single spacer deposition. The resulting feature pitches can be at or below the resolution limit of the exposure system being used, but they need not be, and may be further reduced (e.g., halved) as many times as desired with subsequent spacer formation and pattern transfer processes as described herein. Such spacer-based pitch division techniques can be used, for instance, to define narrow conductive runs, metal gates and other such small features at a pitch smaller than the original backbone pattern.
摘要翻译： 公开了使用单个间隔物沉积来实现具有可变线宽度和可变空间宽度的间距的基于间隔物的间距光刻技术。 所得到的特征间距可以处于或低于所使用的曝光系统的分辨率极限，但是它们不需要并且可以进一步减少（例如，减半），如所需的随后的间隔物形成和图案转移过程所需的多次 这里。 这种基于间隔物的螺距分割技术可以用于例如以比原始骨架图案小的间距来限定窄导电线，金属栅极和其它这样的小特征。
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公开(公告)号：US06927082B1
公开(公告)日：2005-08-09
申请号：US10797672
申请日：2004-03-10
IPC分类号： H01L21/66
CPC分类号： H01L22/24
摘要： Defective contact plug fills can be detected by applying an etching solution, which in some embodiments preferentially etches in the direction. The etching solution is some embodiments may also produce a characteristic type of undercutting underneath the contact plug fill. Contact plug fills with defects in them have undercutting underneath as a result of the etchant exposure, while defective contact plug fills have no such undercutting. The contact plug fills that are now undercut by etching exposure are unable to dissipate surface charge or surface applied potential and can be detected using voltage contrast methods or conventional electrical testing techniques, for example.
摘要翻译： 可以通过施加蚀刻溶液来检测接触塞填充不良，在一些实施例中蚀刻溶液优先在<111>方向蚀刻。 一些实施例的蚀刻溶液也可以产生在接触塞填充物下面的特征类型的底切。 接触塞填充缺陷，由于蚀刻剂暴露，底部有底切，而有缺陷的接触塞填充物没有这种底切。 例如，通过蚀刻曝光现在被切割的接触塞填充物不能消散表面电荷或表面施加电势，并且可以使用电压对比方法或常规电气测试技术来检测。
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公开(公告)号：US20090267175A1
公开(公告)日：2009-10-29
申请号：US12111702
申请日：2008-04-29
IPC分类号： H01L21/308 , H01L27/00
CPC分类号： H01L21/308 , H01L21/0271 , H01L21/3086 , H01L21/3088
摘要： Double patterning techniques and structures are generally described. In one example, a method includes depositing a first photoresist to a semiconductor substrate, forming a first integrated circuit (IC) pattern in the first photoresist, the first IC pattern comprising one or more trench structures, protecting the first IC pattern in the first photoresist from actions that form a second IC pattern in a second photoresist, depositing the second photoresist to the first IC pattern, and forming the second IC pattern in the second photoresist, the second IC pattern comprising one or more structures that are sufficiently close to the one or more trench structures of the first IC pattern to cause scumming of the second photoresist in the one or more trench structures of the first IC pattern.
摘要翻译： 通常描述双重图案形成技术和结构。 在一个实例中，一种方法包括将第一光致抗蚀剂沉积到半导体衬底，在第一光致抗蚀剂中形成第一集成电路（IC）图案，第一IC图案包括一个或多个沟槽结构，保护第一光致抗蚀剂中的第一IC图案 从在第二光致抗蚀剂中形成第二IC图案的动作，将第二光致抗蚀剂沉积到第一IC图案，以及在第二光致抗蚀剂中形成第二IC图案，第二IC图案包括一个或多个足够接近该一个的结构 或更多个沟槽结构，以使第一IC图案的一个或多个沟槽结构中的第二光致抗蚀剂浮渣。
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公开(公告)号：US20140017899A1
公开(公告)日：2014-01-16
申请号：US13976090
申请日：2011-12-29
申请人： Charles H. Wallace , Swaminathan Sivakumar , Matthew L. Tingey , Chanaka D. Munasinghe , Nadia M. Rahhal-Orabi
发明人： Charles H. Wallace , Swaminathan Sivakumar , Matthew L. Tingey , Chanaka D. Munasinghe , Nadia M. Rahhal-Orabi
IPC分类号： H01L21/308
CPC分类号： H01L21/3088 , H01L21/0337
摘要： Techniques are disclosed for double patterning of a lithographic feature using a barrier layer between the pattern layers. In some cases, the techniques may be implemented with double patterning of a one- or two-dimensional photolithographic feature, for example. In some embodiments, the barrier layer is deposited to protect a first photoresist pattern prior to application of a second photoresist pattern thereon and/or to tailor (e.g., shrink) one or more of the critical dimensions of a trench, hole, or other etchable geometric feature to be formed in a substrate or other suitable surface via lithographic processes. In some embodiments, the techniques may be implemented to generate/print small features (e.g., less than or equal to about 100 nm) including one- and two-dimensional features/structures of varying complexity.
摘要翻译： 公开了使用图案层之间的阻挡层对光刻特征进行双重图案化的技术。 在一些情况下，例如，可以通过双图案化一维或二维光刻特征来实现这些技术。 在一些实施例中，沉积阻挡层以在施加第二光致抗蚀剂图案之前保护第一光致抗蚀剂图案和/或定制（例如，收缩）沟槽，孔或其它可蚀刻的一个或多个临界尺寸 通过光刻工艺在衬底或其它合适的表面中形成的几何特征。 在一些实施例中，可以实施技术来生成/打印包括不同复杂度的一维和二维特征/结构的小特征（例如，小于或等于约100nm）。
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公开(公告)号：US20090001431A1
公开(公告)日：2009-01-01
申请号：US11821971
申请日：2007-06-26
IPC分类号： H01L29/78 , H01L21/4763
CPC分类号： H01L21/76804 , H01L21/76816 , H01L29/78
摘要： In one embodiment of the invention, contact patterning may be divided into two or more passes which may allow designers to control the gate height critical dimension relatively independent from the contact top critical dimension.
摘要翻译： 在本发明的一个实施例中，接触图案化可以被分成两个或更多遍，这可以允许设计者相对独立于接触顶部临界尺寸来控制栅极高度临界尺寸。
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