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    Integrated circuits and methods of forming the same
    5.
    发明授权
    Integrated circuits and methods of forming the same 有权
    集成电路及其形成方法

    公开(公告)号：US08362591B2

    公开(公告)日：2013-01-29

    申请号：US12795734

    申请日：2010-06-08

    申请人： Hsiao-Tsung Yen ,  Hsien-Pin Hu ,  Jhe-Ching Lu ,  Chin-Wei Kuo ,  Ming-Fa Chen ,  Sally Liu

    发明人： Hsiao-Tsung Yen ,  Hsien-Pin Hu ,  Jhe-Ching Lu ,  Chin-Wei Kuo ,  Ming-Fa Chen ,  Sally Liu

    IPC分类号： H01L29/93

    CPC分类号： H01L27/016 ,  H01L29/93

    摘要： A three-dimensional integrated circuit includes a semiconductor substrate where the substrate has an opening extending through a first surface and a second surface of the substrate and where the first surface and the second surface are opposite surfaces of the substrate. A conductive material substantially fills the opening of the substrate to form a conductive through-substrate-via (TSV). An active circuit is disposed on the first surface of the substrate, an inductor is disposed on the second surface of the substrate and the TSV is electrically coupled to the active circuit and the inductor. The three-dimensional integrated circuit may include a varactor formed from a dielectric layer formed in the opening of the substrate such that the conductive material is disposed adjacent the dielectric layer and an impurity implanted region disposed surrounding the TSV such that the dielectric layer is formed between the impurity implanted region and the TSV.

    摘要翻译： 三维集成电路包括半导体衬底，其中衬底具有延伸穿过衬底的第一表面和第二表面的开口，并且其中第一表面和第二表面是与衬底相对的表面。 导电材料基本上填充衬底的开口以形成导电的通过衬底通孔（TSV）。 有源电路设置在衬底的第一表面上，电感器设置在衬底的第二表面上，并且TSV电耦合到有源电路和电感器。 三维集成电路可以包括由形成在基板的开口中的电介质层形成的变容二极管，使得导电材料邻近介电层设置，以及设置在TSV周围的杂质注入区域，使得介电层形成在 杂质注入区和TSV。

    Meander line resistor structure
    8.
    发明授权
    Meander line resistor structure 有权
    曲折线电阻结构

    公开(公告)号：US08890222B2

    公开(公告)日：2014-11-18

    申请号：US13365303

    申请日：2012-02-03

    申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin

    发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin

    IPC分类号： H01L27/108 ,  H01L29/8605

    CPC分类号： H01L27/10808 ,  H01L21/823475 ,  H01L23/5226 ,  H01L23/5228 ,  H01L23/528 ,  H01L27/0629 ,  H01L27/0802 ,  H01L27/10844 ,  H01L27/10897 ,  H01L28/20 ,  H01L29/0653 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A meander line resistor structure comprises a first resistor formed on a first active region, wherein the first resistor is formed by a plurality of first vias connected in series, a second resistor formed on a second active region, wherein the second resistor is formed by a plurality of second vias connected in series and a third resistor formed on the second active region, wherein the third resistor is formed by a plurality of third vias connected in series. The meander line resistor further comprises a first connector coupled between the first resistor and the second resistor.

    摘要翻译： 弯曲线电阻器结构包括形成在第一有源区上的第一电阻器，其中第一电阻器由串联连接的多个第一通孔形成，第二电阻器形成在第二有源区上，其中第二电阻器由 串联连接的多个第二通孔和形成在第二有源区上的第三电阻器，其中第三电阻器由串联连接的多个第三通孔形成。 曲折线电阻器还包括耦合在第一电阻器和第二电阻器之间的第一连接器。

    Integrated Antenna Structure
    9.
    发明申请
    Integrated Antenna Structure 有权
    集成天线结构

    公开(公告)号：US20140008773A1

    公开(公告)日：2014-01-09

    申请号：US13541937

    申请日：2012-07-05

    申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

    发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

    IPC分类号： H01L25/065 ,  H01L21/50

    CPC分类号： H01Q1/38 ,  H01L23/66 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01Q1/2283 ,  H01Q1/40 ,  H01Q7/00 ,  H01L2924/00

    摘要： Some embodiments relate to a semiconductor module comprising an integrated antenna structure configured to wirelessly transmit signals. The integrated antenna structure has a lower metal layer and an upper metal layer. The lower metal layer is disposed on a lower die and is connected to a ground terminal. The upper metal layer is disposed on an upper die and is connected to a signal generator configured to generate a signal to be wirelessly transmitted. The upper die is stacked on the lower die and is connected to the lower die by way of an adhesion layer having one or more micro-bumps. By connecting the lower and upper die together by way of the adhesion layer, the lower and upper metal layers are separated from each other by a large spacing that provides for a good performance of the integrated antenna structure.

    摘要翻译： 一些实施例涉及包括被配置为无线传输信号的集成天线结构的半导体模块。 集成天线结构具有下金属层和上金属层。 下金属层设置在下模上并连接到接地端子。 上金属层设置在上模上并连接到被配置为产生要无线传输的信号的信号发生器。 上模具堆叠在下模上，并通过具有一个或多个微凸块的粘合层连接到下模。 通过将粘合层连接在一起，下部和上部金属层彼此间隔开大间隔，从而提供了集成天线结构的良好性能。