公开(公告)号：US08552812B2

公开(公告)日：2013-10-08

申请号：US12963701

申请日：2010-12-09

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Chin-Wei Kuo ,  Ho-Hsiang Chen

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Chin-Wei Kuo ,  Ho-Hsiang Chen

IPC分类号： H03H5/00 ,  H01F5/00

CPC分类号： H01L23/5227 ,  H01F17/0006 ,  H01F2017/0086 ,  H01L23/5223 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

摘要： An electronic device comprises first, second and third inductors connected in series and formed in a metal layer over a semiconductor substrate. The first and second inductors have a mutual inductance with each other. The second and third inductors having a mutual inductance with each other. A first capacitor has a first electrode connected to a first node. The first node is conductively coupled between the first and second inductors. A second capacitor has a second electrode connected to a second node. The second node is conductively coupled between the second and third inductors.

公开(公告)号：US20130168809A1

公开(公告)日：2013-07-04

申请号：US13340856

申请日：2011-12-30

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Huan-Neng Chen ,  Ho-Hsiang Chen

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Huan-Neng Chen ,  Ho-Hsiang Chen

IPC分类号： H01L23/485

CPC分类号： H01F27/2804 ,  H01F5/003 ,  H01F2027/2809 ,  H01L23/5226 ,  H01L23/5227 ,  H01L23/528 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a semiconductor device. The semiconductor device includes a first inductor formed on a first substrate; a second inductor formed on a second substrate and conductively coupled with the first inductor as a transformer; and a plurality of micro-bump features configured between the first and second substrates. The plurality of micro-bump features include a magnetic material having a relative permeability substantially greater than one and are configured to enhance coupling between the first and second inductors.

公开(公告)号：US08264288B2

公开(公告)日：2012-09-11

申请号：US12957040

申请日：2010-11-30

申请人： Yu-Ling Lin ,  Ying-Ta Lu ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

发明人： Yu-Ling Lin ,  Ying-Ta Lu ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

IPC分类号： H03L1/00

CPC分类号： H03B5/1228 ,  H03B5/1215 ,  H03B27/00 ,  H03B2200/0078 ,  H03B2200/0098

摘要： A circuit includes an oscillator circuit including a first oscillator and a second oscillator. The first and the second oscillators are configured to generate signal having a same frequency and different phases. A transmission line is coupled between the first and the second oscillators.

摘要翻译： 电路包括包括第一振荡器和第二振荡器的振荡器电路。 第一和第二振荡器被配置为产生具有相同频率和不同相位的信号。 传输线耦合在第一和第二振荡器之间。

公开(公告)号：US08610247B2

公开(公告)日：2013-12-17

申请号：US13340856

申请日：2011-12-30

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Huan-Neng Chen ,  Ho-Hsiang Chen

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Huan-Neng Chen ,  Ho-Hsiang Chen

IPC分类号： H01L27/08

CPC分类号： H01F27/2804 ,  H01F5/003 ,  H01F2027/2809 ,  H01L23/5226 ,  H01L23/5227 ,  H01L23/528 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a semiconductor device. The semiconductor device includes a first inductor formed on a first substrate; a second inductor formed on a second substrate and conductively coupled with the first inductor as a transformer; and a plurality of micro-bump features configured between the first and second substrates. The plurality of micro-bump features include a magnetic material having a relative permeability substantially greater than one and are configured to enhance coupling between the first and second inductors.

摘要翻译： 本发明提供一种半导体器件。 半导体器件包括形成在第一衬底上的第一电感器; 第二电感器，其形成在第二基板上，并与所述第一电感器作为变压器导电耦合; 以及配置在第一和第二基板之间的多个微凸块特征。 多个微凸块特征包括具有相对磁导率基本上大于1的磁性材料，并且被配置为增强第一和第二电感器之间的耦合。

公开(公告)号：US20120133446A1

公开(公告)日：2012-05-31

申请号：US12957040

申请日：2010-11-30

申请人： Yu-Ling Lin ,  Ying-Ta Lu ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

发明人： Yu-Ling Lin ,  Ying-Ta Lu ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

IPC分类号： H03B1/00

CPC分类号： H03B5/1228 ,  H03B5/1215 ,  H03B27/00 ,  H03B2200/0078 ,  H03B2200/0098

摘要： A circuit includes an oscillator circuit including a first oscillator and a second oscillator. The first and the second oscillators are configured to generate signal having a same frequency and different phases. A transmission line is coupled between the first and the second oscillators.

摘要翻译： 电路包括包括第一振荡器和第二振荡器的振荡器电路。 第一和第二振荡器被配置为产生具有相同频率和不同相位的信号。 传输线耦合在第一和第二振荡器之间。

公开(公告)号：US09087838B2

公开(公告)日：2015-07-21

申请号：US13280786

申请日：2011-10-25

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

IPC分类号： H01L23/52 ,  H01L21/02 ,  H01L23/522 ,  H01L23/64 ,  H01L49/02

CPC分类号： H01L23/5222 ,  H01F17/0013 ,  H01L21/76805 ,  H01L21/76877 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/552 ,  H01L23/642 ,  H01L23/645 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having an integrated circuit (IC) device; an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and a transformer disposed on the semiconductor substrate and integrated in the interconnect structure. The transformer includes a first conductive feature; a second conductive feature inductively coupled with the first conductive feature; a third conductive feature electrically connected to the first conductive feature; and a fourth conductive feature electrically connected to the second conductive feature. The third and fourth conductive features are designed and configured to be capacitively coupled to increase a coupling coefficient of the transformer.

摘要翻译： 本发明提供一种半导体器件。 半导体器件包括具有集成电路（IC）器件的半导体衬底; 布置在半导体衬底上并与IC器件耦合的互连结构; 以及设置在半导体衬底上并集成在互连结构中的变压器。 变压器包括第一导电特征; 与所述第一导电特征电感耦合的第二导电特征; 电连接到第一导电特征的第三导电特征; 以及电连接到第二导电特征的第四导电特征。 第三和第四导电特征被设计和配置为电容耦合以增加变压器的耦合系数。

公开(公告)号：US20130277794A1

公开(公告)日：2013-10-24

申请号：US13841577

申请日：2013-03-15

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Cheng-Hung Lee ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Cheng-Hung Lee ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

IPC分类号： H01L23/60

CPC分类号： H01L23/60 ,  H01L23/66 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L27/0248 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05655 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14131 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/17517 ,  H01L2224/81455 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A device includes a die including a main circuit and a first pad coupled to the main circuit. A work piece including a second pad is bonded to the die. A first plurality of micro-bumps is electrically coupled in series between the first and the second pads. Each of the plurality of micro-bumps includes a first end joining the die and a second end joining the work piece. A micro-bump is bonded to the die and the work piece. The second pad is electrically coupled to the micro-bump.

摘要翻译： 一种器件包括：裸片，包括主电路和耦合到主电路的第一焊盘。 包括第二垫的工件被结合到模具。 第一多个微凸块在第一和第二焊盘之间串联电耦合。 多个微型凸块中的每一个包括连接模具的第一端和连接工件的第二端。 微凸块与模具和工件结合。 第二焊盘电耦合到微凸起。

公开(公告)号：US20120153433A1

公开(公告)日：2012-06-21

申请号：US12974896

申请日：2010-12-21

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Cheng Hung Lee ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Cheng Hung Lee ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

IPC分类号： H01L23/552 ,  H01L23/00

CPC分类号： H01L23/60 ,  H01L23/66 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L27/0248 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05655 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14131 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/17517 ,  H01L2224/81455 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A device includes a die including a main circuit and a first pad coupled to the main circuit. A work piece including a second pad is bonded to the die. A first plurality of micro-bumps is electrically coupled in series between the first and the second pads. Each of the plurality of micro-bumps includes a first end joining the die and a second end joining the work piece. A micro-bump is bonded to the die and the work piece. The second pad is electrically coupled to the micro-bump.

摘要翻译： 一种器件包括：裸片，包括主电路和耦合到主电路的第一焊盘。 包括第二垫的工件被结合到模具。 第一多个微凸块在第一和第二焊盘之间串联电耦合。 多个微型凸块中的每一个包括连接模具的第一端和连接工件的第二端。 微凸块与模具和工件结合。 第二焊盘电耦合到微凸起。

公开(公告)号：US20120104575A1

公开(公告)日：2012-05-03

申请号：US12917285

申请日：2010-11-01

申请人： Yu-Ling Lin ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chin-Wei Kuo ,  Chewn-Pu Jou

发明人： Yu-Ling Lin ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chin-Wei Kuo ,  Chewn-Pu Jou

IPC分类号： H01L23/14

CPC分类号： H01L23/5225 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/64 ,  H01L23/66 ,  H01L27/0629 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/00

摘要： A strip-line includes a ground plane extending through a plurality of dielectric layers over a substrate; a signal line over the substrate and on a side of the ground plane; a first plurality of metal strips under the signal line and in a first metal layer, wherein the first plurality of metal strips is parallel to each other, and is spaced apart from each other by spaces; and a second plurality of metal strips under the signal line and in a second metal layer over the first metal layer. The second plurality of metal strips vertically overlaps the spaces. The first plurality of metal strips is electrically coupled to the second plurality of metal strips through the ground plane, and no via physically contacts the first plurality of metal strips and the second plurality of metal strips.

摘要翻译： 带状线包括在衬底上延伸穿过多个电介质层的接地平面; 在基板上并在接地平面的一侧的信号线; 在信号线下方和第一金属层中的第一多个金属条，其中所述第一多个金属条彼此平行并且彼此间隔开; 以及信号线下方的第二多个金属条，并且在第一金属层上方的第二金属层中。 第二多个金属带垂直地与空间重叠。 第一多个金属条通过接地平面电耦合到第二多个金属条，并且不通过物理地接触第一多个金属条和第二多个金属条。

公开(公告)号：US09923101B2

公开(公告)日：2018-03-20

申请号：US13615503

申请日：2012-09-13

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Chewn-Pu Jou ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Chewn-Pu Jou ,  Min-Chie Jeng

IPC分类号： H01L29/94 ,  H01L29/66 ,  H01L21/66 ,  H01L27/06 ,  H01L49/02 ,  H01L23/48 ,  H01L23/58

CPC分类号： H01L29/94 ,  H01L22/34 ,  H01L23/481 ,  H01L23/585 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/66181 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure is provided. The semiconductor structure includes a floating substrate; and a capacitor grounded and connected to the floating substrate. A method of manufacturing a semiconductor structure is also provided.