利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.028 秒)

    Electrical bypass structure for MEMS device
    2.
    发明授权
    Electrical bypass structure for MEMS device 有权
    MEMS器件的电气旁路结构

    公开(公告)号：US08878312B2

    公开(公告)日：2014-11-04

    申请号：US13195243

    申请日：2011-08-01

    申请人： Chia-Ming Hung ,  Hung-Sen Wang ,  Hsiang-Fu Chen ,  Te-Hsi Lee ,  Alex Kalnitsky ,  Wen-Chuan Tai ,  Kuei-Sung Chang ,  Yi Heng Tsai

    发明人： Chia-Ming Hung ,  Hung-Sen Wang ,  Hsiang-Fu Chen ,  Te-Hsi Lee ,  Alex Kalnitsky ,  Wen-Chuan Tai ,  Kuei-Sung Chang ,  Yi Heng Tsai

    IPC分类号： H01L29/84 ,  B81C1/00

    CPC分类号： B81C1/00579 ,  B81B2207/015 ,  B81C2203/0771 ,  Y10T29/49126

    摘要： An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.

    摘要翻译： 公开了一种包括用于互补金属氧化物半导体（CMOS）和/或微机电系统（MEMS）器件）的旁路结构的装置及其制造方法。 示例性装置包括第一基板; 包括MEMS器件的第二衬底; 设置在所述第一基板和所述第二基板之间的绝缘体; 以及设置在所述绝缘体层中的电旁路结构，其接触所述第一衬底的一部分，其中所述电旁路结构与所述第二衬底中的所述MEMS器件和所述第一衬底中包括的任何器件电隔离。

    ELECTRICAL BYPASS STRUCTURE FOR MEMS DEVICE
    3.
    发明申请
    ELECTRICAL BYPASS STRUCTURE FOR MEMS DEVICE 有权
    用于MEMS器件的电子旁路结构

    公开(公告)号：US20120223613A1

    公开(公告)日：2012-09-06

    申请号：US13195243

    申请日：2011-08-01

    申请人： Chia-Ming Hung ,  Hung-Sen Wang ,  Hsiang-Fu Chen ,  Te-Hsi Lee ,  Alex Kalnitsky ,  Wen-Chuan Tai ,  Kuei-Sung Chang ,  Yi Heng Tsai

    发明人： Chia-Ming Hung ,  Hung-Sen Wang ,  Hsiang-Fu Chen ,  Te-Hsi Lee ,  Alex Kalnitsky ,  Wen-Chuan Tai ,  Kuei-Sung Chang ,  Yi Heng Tsai

    IPC分类号： H02N11/00 ,  H05K3/36

    CPC分类号： B81C1/00579 ,  B81B2207/015 ,  B81C2203/0771 ,  Y10T29/49126

    摘要： An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.

    摘要翻译： 公开了一种包括用于互补金属氧化物半导体（CMOS）和/或微机电系统（MEMS）器件）的旁路结构的装置及其制造方法。 示例性装置包括第一基板; 包括MEMS器件的第二衬底; 设置在所述第一基板和所述第二基板之间的绝缘体; 以及设置在所述绝缘体层中的电旁路结构，其接触所述第一衬底的一部分，其中所述电旁路结构与所述第二衬底中的所述MEMS器件和所述第一衬底中包括的任何器件电隔离。

    Structure and method for motion sensor
    4.
    发明授权
    Structure and method for motion sensor 有权
    运动传感器的结构和方法

    公开(公告)号：US09365416B2

    公开(公告)日：2016-06-14

    申请号：US13433906

    申请日：2012-03-29

    申请人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

    发明人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

    IPC分类号： H01L29/84 ,  B81C1/00

    CPC分类号： B81C1/00269 ,  B81C2203/036

    摘要： The present disclosure provides one embodiment of a motion sensor structure. The motion sensor structure includes a first substrate having an integrated circuit formed thereon; a second substrate bonded to the first substrate from a first surface, wherein the second substrate includes a motion sensor formed thereon; and a third substrate bonded to a second surface of the second substrate, wherein the third substrate includes a recessed region aligned with the motion sensor.

    摘要翻译： 本公开提供了运动传感器结构的一个实施例。 运动传感器结构包括其上形成有集成电路的第一基板; 第二基板，其从第一表面接合到第一基板，其中第二基板包括形成在其上的运动传感器; 以及第三基板，其接合到所述第二基板的第二表面，其中所述第三基板包括与所述运动传感器对准的凹陷区域。

    STRUCTURE AND METHOD FOR MOTION SENSOR
    5.
    发明申请
    STRUCTURE AND METHOD FOR MOTION SENSOR 有权
    运动传感器的结构和方法

    公开(公告)号：US20130043510A1

    公开(公告)日：2013-02-21

    申请号：US13433906

    申请日：2012-03-29

    申请人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

    发明人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

    IPC分类号： H01L29/84 ,  H01L21/50

    CPC分类号： B81C1/00269 ,  B81C2203/036

    摘要： The present disclosure provides one embodiment of a motion sensor structure. The motion sensor structure includes a first substrate having an integrated circuit formed thereon; a second substrate bonded to the first substrate from a first surface, wherein the second substrate includes a motion sensor formed thereon; and a third substrate bonded to a second surface of the second substrate, wherein the third substrate includes a recessed region aligned with the motion sensor.

    摘要翻译： 本公开提供了运动传感器结构的一个实施例。 运动传感器结构包括其上形成有集成电路的第一基板; 第二基板，其从第一表面接合到第一基板，其中第二基板包括形成在其上的运动传感器; 以及第三基板，其接合到所述第二基板的第二表面，其中所述第三基板包括与所述运动传感器对准的凹陷区域。

    Hybrid MEMS bump design to prevent in-process and in-use stiction
    6.
    发明授权
    Hybrid MEMS bump design to prevent in-process and in-use stiction 有权
    混合MEMS凸块设计，以防止在进程和使用中的粘滞

    公开(公告)号：US08723280B2

    公开(公告)日：2014-05-13

    申请号：US13563935

    申请日：2012-08-01

    申请人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

    发明人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

    IPC分类号： H01L29/82

    CPC分类号： B81C1/00015 ,  B81B3/00 ,  B81B3/001 ,  B81B7/02 ,  B81C99/00 ,  H01L29/84

    摘要： A micro-electro-mechanical systems (MEMS) device and method for forming a MEMS device is provided. A proof mass is suspended a distance above a surface of a substrate by a fulcrum. A pair of sensing plates are positioned on the substrate on opposing sides of the fulcrum. Metal bumps are associated with each sensing plate and positioned near a respective distal end of the proof mass. Each metal bump extends from the surface of the substrate and generally inhibits charge-induced stiction associated with the proof mass. Oxide bumps are associated with each of the pair of sensing plates and positioned between the respective sensing plate and the fulcrum. Each oxide bump extends from the first surface of the substrate a greater distance than the metal bumps and acts as a shock absorber by preventing the distal ends of the proof mass from contacting the metal bumps during shock loading.

    摘要翻译： 提供了一种用于形成MEMS器件的微电子机械系统（MEMS）器件和方法。 通过支点将检测质量悬挂在基板的表面上方的距离处。 一对感测板位于支撑体的相对侧上的基板上。 金属凸块与每个感测板相关联并且定位在检验质量块的相应远端附近。 每个金属凸起从衬底的表面延伸，并且通常抑制与校准质量相关联的电荷诱导的静电。 氧化物凸块与一对感测板中的每一个相关联并且位于相应的感测板和支点之间。 每个氧化物凸块从衬底的第一表面延伸出比金属凸块更大的距离，并且通过在冲击载荷期间防止校准质量块的远端接触金属凸块而用作减震器。

    HYBRID MEMS BUMP DESIGN TO PREVENT IN-PROCESS AND IN-USE STICTION
    7.
    发明申请
    HYBRID MEMS BUMP DESIGN TO PREVENT IN-PROCESS AND IN-USE STICTION 有权

    公开(公告)号：US20140035072A1

    公开(公告)日：2014-02-06

    申请号：US13563935

    申请日：2012-08-01

    申请人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

    发明人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

    IPC分类号： H01L29/84 ,  H01L21/02

    CPC分类号： B81C1/00015 ,  B81B3/00 ,  B81B3/001 ,  B81B7/02 ,  B81C99/00 ,  H01L29/84

    摘要： A micro-electro-mechanical systems (MEMS) device and method for forming a MEMS device is provided. A proof mass is suspended a distance above a surface of a substrate by a fulcrum. A pair of sensing plates are positioned on the substrate on opposing sides of the fulcrum. Metal bumps are associated with each sensing plate and positioned near a respective distal end of the proof mass. Each metal bump extends from the surface of the substrate and generally inhibits charge-induced stiction associated with the proof mass. Oxide bumps are associated with each of the pair of sensing plates and positioned between the respective sensing plate and the fulcrum. Each oxide bump extends from the first surface of the substrate a greater distance than the metal bumps and acts as a shock absorber by preventing the distal ends of the proof mass from contacting the metal bumps during shock loading.