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公开(公告)号：US4587309A
公开(公告)日：1986-05-06
申请号：US724611
申请日：1985-04-18
申请人： Chiaki Tanaka , Makoto Kondou , Yoshiyuki Yamamoto
发明人： Chiaki Tanaka , Makoto Kondou , Yoshiyuki Yamamoto
CPC分类号： C08G69/44
摘要： The high polymerization degree polyetheresteramides without any gelated materials and with superior color tones are obtained in a short time through the polycondensing interaction carried out between (A) one or more than two polyamide forming components selected from lactams and aminocarboxylic acids as well as the salts of substantially-equal quantities of diamines and dicarboxylic acid and (B) the polyetherester forming components consisting of the substantially-equal quantities of dicarboxylic acids and poly(alkylene oxide) glycols in the presence of 0.001 to 0.5 percent by weight of the mixtures composed of antimony oxides/organic tin compounds at the ratios of 80/20 to 30/70 by weight and more preferably in the co-presence of 0.0005 to 0.5 percent by weight of phosphoric compounds.
摘要翻译： 通过在（A）一种或多于两种选自内酰胺和氨基羧酸的聚酰胺形成组分中进行的缩聚相互作用，在短时间内获得没有任何胶凝材料和优异色调的高聚合度聚醚酯酰胺以及 基本上相等量的二胺和二羧酸和（B）在由锑组成的混合物的0.001至0.5重量％的存在下由基本上相等量的二羧酸和聚（环氧烷）二醇组成的聚醚酯形成组分 氧化物/有机锡化合物，其比例为80/20〜30/70，更优选为0.0005〜0.5重量％的磷酸化合物共存。
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公开(公告)号：US08658517B2
公开(公告)日：2014-02-25
申请号：US13643206
申请日：2011-11-10
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/20
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
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3.发明授权GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture 有权GaN单晶质量及其制造方法，半导体器件及其制造方法公开(公告)号：US08294245B2
公开(公告)日：2012-10-23
申请号：US12797617
申请日：2010-06-10
申请人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
发明人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , C30B25/00 , C30B29/406 , H01L21/02008 , H01L21/0237 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205
摘要： Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30° C., its elastic constant C11 is from 348 GPa to 365 GPa and its elastic constant C13 is from 90 GPa to 98 GPa; alternatively its elastic constant C11 is from 352 GPa to 362 GPa.
摘要翻译： 提供GaN单晶体，其制造方法以及其制造的半导体器件及其制造方法，由此当生长GaN单晶质量时，并且当将生长的GaN单晶体块加工成 衬底或类似形式，以及当至少单层GaN半导体层以衬底形式形成在单晶GaN块上以制造半导体器件时，将裂纹控制到最小。 GaN单晶块10具有纤锌矿结晶结构，在30℃下，其弹性常数C11为348GPa至365GPa，其弹性常数C13为90GPa至98GPa; 或者其弹性常数C11为352GPa至362GPa。
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公开(公告)号：US20120122301A1
公开(公告)日：2012-05-17
申请号：US13283963
申请日：2011-10-28
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L33/007 , H01L33/0079
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.
摘要翻译： 制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括其主表面的热膨胀系数大于0.8倍且小于1.0倍的支撑基板 GaN晶体沿着轴方向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于单晶主表面的轴线具有三重对称性 并且在复合衬底中的单晶膜的主表面上形成GaN基膜，复合衬底中的单晶膜是SiC膜。 因此，提供了一种制造能够制造基板上具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。
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公开(公告)号：US20120118222A1
公开(公告)日：2012-05-17
申请号：US13283820
申请日：2011-10-28
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 1.0 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
摘要翻译： 制造GaN基膜的方法包括以下步骤：制备复合基板，所述复合基板包括支撑基板，其主表面的热膨胀系数大于1.0倍且小于其主表面的1.2倍 GaN晶体沿着轴方向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于单晶主表面的轴线具有三重对称性 并且在复合衬底中的单晶膜的主表面上形成GaN基膜，复合衬底中的单晶膜是SiC膜。 因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。
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6.发明授权Method for manufacturing diamond monocrystal having a thin film, and diamond monocrystal having a thin film 有权具有薄膜的金刚石单晶的制造方法和具有薄膜的金刚石单晶公开(公告)号：US08119241B2
公开(公告)日：2012-02-21
申请号：US12282137
申请日：2007-12-26
IPC分类号： C30B29/04
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30
摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.
摘要翻译： 一种在{111}单晶衬底的主表面上在300K下比电阻为300Ω·cm-cm或更小的低电阻磷掺杂外延薄膜的方法，其中磷原子/碳原子比 为3％以上，主偏离角为0.50°以上的主表面。 具有低电阻磷掺杂金刚石外延薄膜的金刚石单晶使得薄膜表面相对于{111}面具有0.50°或更大的偏角，并且低电阻磷掺杂金刚石外延薄膜的电阻率 电阻磷掺杂金刚石外延薄膜在300K时为300＆OHgr; cm以下。
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公开(公告)号：US07995267B2
公开(公告)日：2011-08-09
申请号：US12510267
申请日：2009-07-28
IPC分类号： G02F1/35
CPC分类号： G02F1/3558 , G02F1/353 , G02F2001/3548
摘要： Affords a wavelength converter manufacturing method and a wavelength converter whereby the transmissivity can be improved. A method of manufacturing a wavelength converter (10a) is provided with the following steps. At first, crystal is grown. Then a first crystal (11) and a second crystal (12) are formed by sectioning the crystal into two or more in such a way that the domains are the reverse of each other. The first and second crystals (11) and (12) are then interlocked in such a way that a domain inversion structure in which the polar directions of the first and second crystals (11) and (12) periodically reverse along an optical waveguide (13) is formed, and the domain inversion structure satisfies quasi-phase-matching conditions for an incoming beam (101).
摘要翻译： 提供一种波长转换器制造方法和波长转换器，由此能够提高透射率。 制造波长转换器（10a）的方法具有以下步骤。 起初，晶体生长。 然后通过将晶体分成两个或更多个使得畴相反的方式形成第一晶体（11）和第二晶体（12）。 然后将第一和第二晶体（11）和（12）互锁，使得第一和第二晶体（11）和（12）的极性方向沿着光波导（13）周期性地反转的畴反转结构 ），域反转结构满足入射光束（101）的准相位匹配条件。
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公开(公告)号：US20110156213A1
公开(公告)日：2011-06-30
申请号：US13061307
申请日：2009-08-26
申请人： Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
CPC分类号： H01L21/02021 , C30B25/00 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/02013 , H01L21/02389
摘要： A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.
摘要翻译： 制造氮化物衬底的方法包括以下步骤。 首先，生长氮化物晶体。 然后，从氮化物晶体切割包括前表面的氮化物衬底。 在切割步骤中，切割氮化物衬底，使得在与正面正交的轴与m轴或a轴之间形成的偏角大于零。 当氮化物晶体沿c轴方向生长时，在切割步骤中，沿着通过氮化物晶体的前表面和后表面的平坦平面从氮化物晶体切割氮化物衬底，并且不通过 通过将前表面的曲率半径的中心与氮化物晶体的后表面的曲率半径的中心连接的线段。
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9.发明申请AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT 审中-公开Al x Ga（1-x）N单晶，生产Al x Ga（1-x）N单晶和光学元件的方法公开(公告)号：US20110104438A1
公开(公告)日：2011-05-05
申请号：US13001749
申请日：2009-06-25
申请人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
发明人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
CPC分类号： G02B1/02 , C30B23/025 , C30B29/403 , C30B29/406 , G02B13/143 , Y10T428/24355 , Y10T428/2973
摘要： A method of producing an AlxGa(1-x)N (0
摘要翻译： 制造Al x Ga（1-x）N（0
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公开(公告)号：US07807126B2
公开(公告)日：2010-10-05
申请号：US12364609
申请日：2009-02-03
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
摘要翻译： 一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面 作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板的一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。
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