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    Barrier layers
    1.
    发明授权
    Barrier layers 有权
    阻隔层

    公开(公告)号：US08508018B2

    公开(公告)日：2013-08-13

    申请号：US12890462

    申请日：2010-09-24

    申请人： Rohan N. Akolkar ,  Sridhar Balakrishnan ,  James S. Clarke ,  Christopher J. Jezewski ,  Philip Yashar

    发明人： Rohan N. Akolkar ,  Sridhar Balakrishnan ,  James S. Clarke ,  Christopher J. Jezewski ,  Philip Yashar

    IPC分类号： H01L29/00

    CPC分类号： C25D5/02 ,  C23C28/023 ,  C25D7/123 ,  H01L21/76831 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76868 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12361 ,  Y10T428/12389 ,  H01L2924/00

    摘要： Methods for fabricating integrated circuit electrical interconnects and electrical interconnects are provided. Methods include providing a substrate having a surface, the surface having a feature formed therein wherein the feature is a trench or via, depositing a metal layer, the metal of the metal layer being selected from the group consisting of Ru, Co, Pt, Ir, Pd, Re, and Rh, onto surfaces of the feature, depositing a copper seed layer wherein the copper seed layer comprises a dopant and the dopant is selected from the group consisting of Mn, Mg, MgB2. P, B, Al, Co and combinations thereof, onto the metal layer, and depositing copper into the feature. Devices comprising copper interconnects having metal liner layers are provided. Devices having liner layers comprising ruthenium are provided.

    摘要翻译： 提供了制造集成电路电互连和电互连的方法。 方法包括提供具有表面的基底，所述表面具有形成在其中的特征，其中所述特征是沟槽或通孔，沉积金属层，所述金属层的金属选自由Ru，Co，Pt，Ir ，Pd，Re和Rh沉积到特征的表面上，沉积铜籽晶层，其中铜籽晶层包含掺杂剂，掺杂剂选自Mn，Mg，MgB 2。 P，B，Al，Co及其组合在金属层上，并将铜沉积到特征中。 提供了包括具有金属衬里层的铜互连的装置。 提供了具有包含钌的衬里层的器件。

    Etchback process for tungsten utilizing a NF3/AR chemistry
    7.
    发明授权
    Etchback process for tungsten utilizing a NF3/AR chemistry 失效
    使用NF3 / AR化学的钨的Etchback工艺

    公开(公告)号：US5164330A

    公开(公告)日：1992-11-17

    申请号：US686683

    申请日：1991-04-17

    申请人： Rickie L. Davis ,  Sohail U. Ahmed ,  Sridhar Balakrishnan

    发明人： Rickie L. Davis ,  Sohail U. Ahmed ,  Sridhar Balakrishnan

    IPC分类号： H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768

    CPC分类号： H01L21/32115 ,  H01L21/32136 ,  H01L21/76879

    摘要： A process for etching a tungsten layer formed on a semiconductor substrate is described. The etch is carried out in a parallel plate plasma reactor. The etchant gases include nitrogen trifluoride (NF.sub.3) and argon (Ar). The use of NF.sub.3 in a tungsten etching process reduces the build-up of polymers or sulfur residues on the electrode as occurs with processes utilizing sulfur or carbon fluorides as etchant gases. The process has a sufficiently high etch rate for volume production. The NF.sub.3 -Ar etch process can be used to etchback a blanket layer of deposited tungsten to form tungsten via plugs in contact areas of the device. In the via plug process, reduced micro-loading effect, that is, the tendency of some plugs to be etched away before the complete etching of the blanket layer, has been achieved. The etching of tunsten with NF.sub.3 -Ar process can be preformed in one or more steps in process utilizing several etching steps. Additionally, a tungsten etch incorporating one or more NF.sub.3 -Ar steps and one or more steps utilizing etchants such as SF.sub.6, Cl.sub.2, O.sub.2, CF.sub.4, CBrF.sub.3, CF.sub.3 Cl, CF.sub.2 Cl.sub.2 or similar etchants can be used to optimize etch rate and uniformity while obtaining the benefit of reduced residue build-up.

    摘要翻译： 描述了用于蚀刻形成在半导体衬底上的钨层的工艺。 蚀刻在平行平板等离子体反应器中进行。 蚀刻剂气体包括三氟化氮（NF 3）和氩（Ar）。 在钨蚀刻工艺中使用NF3可以减少聚合物或硫残余物在电极上的积聚，这与使用硫或碳氟化物作为蚀刻剂气体的方法一样。 该方法具有足够高的蚀刻速率用于批量生产。 NF3-Ar蚀刻工艺可用于回蚀沉积的钨的覆盖层，以通过在器件的接触区域中的插塞形成钨。 在通孔插入过程中，已经实现了减小的微负载效应，即，在完全蚀刻覆盖层之前一些插塞被蚀刻掉的趋势。 用NF3-Ar工艺蚀刻tunsten可以在一个或多个步骤中利用几个蚀刻步骤进行。 另外，掺入一个或多个NF 3 -Ar步骤的钨蚀刻和利用诸如SF 6，Cl 2，O 2，CF 4，CBrF 3，CF 3 Cl，CF 2 Cl 2或类似蚀刻剂之类的蚀刻剂的一个或多个步骤可用于优化蚀刻速率和均匀性，同时获得 减少残留物积聚的好处。