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1.发明授权NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same 有权具有纳米管块的NRAM阵列，纳米管迹线和纳米管平面及其制造方法公开(公告)号：US08587989B2
公开(公告)日：2013-11-19
申请号：US12486602
申请日：2009-06-17
IPC分类号： G11C13/00
CPC分类号： G11C13/025 , B82Y10/00 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1675
摘要： NRAM arrays with nanotube blocks, traces and planes, and methods of making the same are disclosed. In some embodiments, a nanotube memory array includes a nanotube fabric layer disposed in electrical communication with first and second conductor layers. A memory operation circuit including a circuit for generating and applying a select signal on first and second conductor layers to induce a change in the resistance of the nanotube fabric layer between the first and second conductor layers is provided. At least two adjacent memory cells are formed in at least two selected cross sections of the nanotube fabric and conductor layers such that each memory cell is uniquely addressable and programmable. For each cell, a change in resistance corresponds to a change in an informational state of the memory cell. Some embodiments include bit lines, word lines, and reference lines. In some embodiments, 6F2 memory cell density is achieved.
摘要翻译： 公开了具有纳米管块，轨迹和平面的NRAM阵列及其制造方法。 在一些实施例中，纳米管存储器阵列包括布置成与第一和第二导体层电连通的纳米管织物层。 一种存储器操作电路，包括用于在第一和第二导体层上产生和施加选择信号以引起第一和第二导体层之间的纳米管织物层的电阻变化的电路。 至少两个相邻的存储单元形成在纳米管织物和导体层的至少两个选定的横截面中，使得每个存储单元是唯一可寻址和可编程的。 对于每个单元，电阻变化对应于存储单元的信息状态的变化。 一些实施例包括位线，字线和参考线。 在一些实施例中，实现6F2存储单元密度。
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2.发明授权Compact electrical switching devices with nanotube elements, and methods of making same 有权具有纳米管元件的紧凑型电气开关器件及其制造方法公开(公告)号：US08222704B2
公开(公告)日：2012-07-17
申请号：US12651288
申请日：2009-12-31
CPC分类号： B82Y10/00 , G11C13/025 , H01L27/24 , H01L29/0665 , H01L29/43 , H01L51/0048 , Y10S977/742 , Y10S977/936
摘要： An electrical device includes a substrate; first and second active areas; first and second word lines disposed in a first plane; first and second bit lines in a second plane and in electrical communication with first and second active areas; and a reference line disposed in a third plane. A nanotube element disposed in a fourth plane is in electrical communication with first and second active areas and the reference line via electrical connections at a first surface of the nanotube element. The nanotube element includes first and second regions having resistance states that are independently adjustable in response to electrical stimuli, wherein the first and second regions nonvolatilely retain the resistance states. Arrays of such electrical devices can be formed as nonvolatile memory devices. Methods for fabricating such devices are also disclosed.
摘要翻译： 电气装置包括基板; 第一和第二活跃区域; 布置在第一平面中的第一和第二字线; 第一和第二位线在第二平面中并且与第一和第二有效区域电连通; 以及设置在第三平面中的参考线。 设置在第四平面中的纳米管元件通过在纳米管元件的第一表面处的电连接与第一和第二有源区域和参考线路电连通。 纳米管元件包括具有响应于电刺激可独立调节的电阻状态的第一和第二区域，其中第一和第二区域非常地保持电阻状态。 这种电气装置的阵列可以形成为非易失性存储装置。 还公开了制造这种装置的方法。
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3.发明申请COMPACT ELECTRICAL SWITCHING DEVICES WITH NANOTUBE ELEMENTS, AND METHODS OF MAKING SAME 有权具有纳米元件的紧凑型电气开关装置及其制造方法公开(公告)号：US20110156009A1
公开(公告)日：2011-06-30
申请号：US12651288
申请日：2009-12-31
CPC分类号： B82Y10/00 , G11C13/025 , H01L27/24 , H01L29/0665 , H01L29/43 , H01L51/0048 , Y10S977/742 , Y10S977/936
摘要： An electrical device includes a substrate; first and second active areas; first and second word lines disposed in a first plane; first and second bit lines in a second plane and in electrical communication with first and second active areas; and a reference line disposed in a third plane. A nanotube element disposed in a fourth plane is in electrical communication with first and second active areas and the reference line via electrical connections at a first surface of the nanotube element. The nanotube element includes first and second regions having resistance states that are independently adjustable in response to electrical stimuli, wherein the first and second regions nonvolatilely retain the resistance states. Arrays of such electrical devices can be formed as nonvolatile memory devices. Methods for fabricating such devices are also disclosed.
摘要翻译： 电气装置包括基板; 第一和第二活跃区域; 布置在第一平面中的第一和第二字线; 第一和第二位线在第二平面中并且与第一和第二有效区域电连通; 以及设置在第三平面中的参考线。 设置在第四平面中的纳米管元件通过在纳米管元件的第一表面处的电连接与第一和第二有源区域和参考线路电连通。 纳米管元件包括具有响应于电刺激可独立调节的电阻状态的第一和第二区域，其中第一和第二区域非常地保持电阻状态。 这种电气装置的阵列可以形成为非易失性存储装置。 还公开了制造这种装置的方法。
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4.发明授权Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法公开(公告)号：US09287356B2
公开(公告)日：2016-03-15
申请号：US12356447
申请日：2009-01-20
IPC分类号： H01L29/06 , B82Y10/00 , G11C11/56 , G11C13/00 , G11C13/02 , H01L27/102 , H01L29/12 , H01L29/16 , H01L51/00 , H01L21/822 , H01L23/525 , H01L27/06 , H01L27/12
CPC分类号： G11C13/0097 , B82Y10/00 , G11C11/56 , G11C13/0007 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C13/025 , G11C2013/009 , G11C2213/19 , G11C2213/35 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L21/8221 , H01L23/5256 , H01L27/0688 , H01L27/1021 , H01L27/115 , H01L27/1203 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/1606 , H01L29/861 , H01L51/0048 , H01L2924/00011 , H01L2924/0002 , H01L2924/00 , H01L2224/80001
摘要： A non-volatile nanotube switch and memory arrays constructed from these switches are disclosed. A non-volatile nanotube switch includes a conductive terminal and a nanoscopic element stack having a plurality of nanoscopic elements arranged in direct electrical contact, a first comprising a nanotube fabric and a second comprising a carbon material, a portion of the nanoscopic element stack in electrical contact with the conductive terminal. Control circuitry is provided in electrical communication with and for applying electrical stimulus to the conductive terminal and to at least a portion of the nanoscopic element stack. At least one of the nanoscopic elements is capable of switching among a plurality of electronic states in response to a corresponding electrical stimuli applied by the control circuitry to the conductive terminal and the portion of the nanoscopic element stack. For each electronic state, the nanoscopic element stack provides an electrical pathway of corresponding resistance.
摘要翻译： 公开了一种由这些开关构成的非易失性纳米管开关和存储器阵列。 非挥发性纳米管开关包括导电端子和纳米级元件堆叠，其具有以直接电接触排列的多个纳米级元件，第一纳米管构件包括纳米管织物，第二纳米管结构包括碳材料，纳米级元件堆叠的一部分在电气 与导电端子接触。 提供控制电路与导电端子和纳米级元件堆叠的至少一部分电连通并用于向导电端子施加电刺激。 纳米级元件中的至少一个能够响应于由控制电路施加到导电端子和纳米级元件堆叠的部分的相应的电刺激而能够在多个电子状态之间切换。 对于每个电子状态，纳米级元件堆叠提供相应电阻的电路径。
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5.发明授权Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法公开(公告)号：US08183665B2
公开(公告)日：2012-05-22
申请号：US12273807
申请日：2008-11-19
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/003 , G11C2213/19 , G11C2213/71 , G11C2213/72 , G11C2213/78 , H01L21/8221 , H01L23/5256 , H01L27/0688 , H01L27/1021 , H01L27/1203 , H01L29/1606 , H01L2924/00011 , H01L2924/0002 , Y10S977/943 , H01L2924/00 , H01L2224/80001
摘要： A high-density memory array. A plurality of word lines and a plurality of bit lines are arranged to access a plurality of memory cells. Each memory cell includes a first conductive terminal and an article in physical and electrical contact with the first conductive terminal, the article comprising a plurality of nanoscopic particles. A second conductive terminal is in physical and electrical contact with the article. Select circuitry is arranged in electrical communication with a bit line of the plurality of bit lines and one of the first and second conductive terminals. The article has a physical dimension that defines a spacing between the first and second conductive terminals such that the nanotube article is interposed between the first and second conducive terminals. A logical state of each memory cell is selectable by activation only of the bit line and the word line connected to that memory cell.
摘要翻译： 高密度存储阵列。 多个字线和多个位线被布置为访问多个存储单元。 每个存储单元包括第一导电端子和与第一导电端子物理和电接触的制品，所述制品包括多个纳米级颗粒。 第二导电端子与物品物理和电接触。 选择电路布置成与多个位线的位线和第一和第二导电端子之一电连通。 该制品具有限定第一和第二导电端子之间的间隔的物理尺寸，使得纳米管制品插入在第一和第二导电端子之间。 每个存储器单元的逻辑状态仅通过仅连接到该存储器单元的位线和字线的激活来选择。
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6.发明授权Two-terminal nanotube devices including a nanotube bridge and methods of making same 有权包括纳米管桥的两端纳米管装置及其制造方法公开(公告)号：US08134220B2
公开(公告)日：2012-03-13
申请号：US12139910
申请日：2008-06-16
CPC分类号： H01L51/0591 , B82Y10/00 , G11C13/025 , H01L51/0048 , Y10S977/943
摘要： Nanotube switching devices having nanotube bridges are disclosed. Two-terminal nanotube switches include conductive terminals extending up from a substrate and defining a void in the substrate. Nantoube articles are suspended over the void or form a bottom surface of a void. The nanotube articles are arranged to permanently contact at least a portion of the conductive terminals. An electrical stimulus circuit in communication with the conductive terminals is used to generate and apply selected waveforms to induce a change in resistance of the device between relatively high and low resistance values. Relatively high and relatively low resistance values correspond to states of the device. A single conductive terminal and a interconnect line may be used. The nanotube article may comprise a patterned region of nanotube fabric, having an active region with a relatively high or relatively low resistance value. Methods of making each device are disclosed.
摘要翻译： 公开了具有纳米管桥的纳米管开关器件。 两端纳米管开关包括从衬底向上延伸并且在衬底中限定空隙的导电端子。 纳米管制品悬浮在空隙上或形成空隙的底部表面。 纳米管制品布置成永久地接触导电端子的至少一部分。 使用与导电端子连通的电刺激电路来产生并施加所选择的波形以引起器件在较高和较低电阻值之间的电阻变化。 相对较高且相对较低的电阻值对应于器件的状态。 可以使用单个导电端子和互连线。 纳米管制品可以包括具有相对较高或相对低的电阻值的有源区的纳米管织物的图案化区域。 公开了制造每个装置的方法。
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公开(公告)号：US07859385B2
公开(公告)日：2010-12-28
申请号：US12111442
申请日：2008-04-29
IPC分类号： H01C10/00
CPC分类号： H01C7/06 , H01C7/003 , H01C7/005 , H01C7/006 , H01C10/306 , H01C17/0652 , H01C17/232 , H01C17/283 , H01L28/22
摘要： Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.
摘要翻译： 电阻元件包括具有预定面积的纳米纤维的图案化区域，其中纳米纤维具有选定的薄层电阻; 以及第一和第二电触头接触纳米尺寸的图案化区域并且彼此间隔开。 元件在第一和第二电触点之间的电阻由所选择的纳米尺寸的薄层电阻，纳米的面积以及第一和第二电触头间隔的关系来确定。 体积电阻是可调谐的。
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公开(公告)号：US08631562B2
公开(公告)日：2014-01-21
申请号：US12953076
申请日：2010-11-23
CPC分类号： H01L23/62 , B82Y10/00 , G11C13/025 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01L23/60 , H01L27/0248 , H01L27/0251 , H01L51/0048 , H01L2224/16 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/19103 , H01L2924/19104 , H01L2924/19105 , H01L2924/3011 , H05K1/0259 , Y10T29/49105 , Y10T29/49117 , Y10T29/49124 , Y10T29/49204
摘要： An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment.
摘要翻译： 用于保护受保护电路的静电放电（ESD）保护电路耦合到输入焊盘。 ESD电路包括电子控制的纳米管开关。 开关耦合到保护电路和放电路径。 纳米管开关可以响应于控制的电刺激而被控制在去激活状态和激活状态之间。 激活状态产生电流路径，使得输入焊盘上的信号流到放电路径，使输入焊盘处的信号保持在受保护电路的预定可操作范围内。 纳米管开关，输入焊盘和受保护电路可以在半导体芯片上。 纳米管开关可以在芯片载体上。 根据实施例，去激活状态和激活状态可以是易失性的或非易失性的。
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9.发明授权Nonvolatile resistive memories having scalable two-terminal nanotube switches 有权具有可扩展的两端纳米管开关的非易失性电阻存储器公开(公告)号：US08102018B2
公开(公告)日：2012-01-24
申请号：US11835612
申请日：2007-08-08
申请人： Claude L. Bertin , Thomas Rueckes , Jonathan W. Ward , Frank Guo , Steven L. Konsek , Mitchell Meinhold
发明人： Claude L. Bertin , Thomas Rueckes , Jonathan W. Ward , Frank Guo , Steven L. Konsek , Mitchell Meinhold
CPC分类号： B82Y10/00 , G11C11/56 , G11C13/003 , G11C13/025 , G11C19/00 , G11C29/86 , G11C2213/19 , G11C2213/75 , G11C2213/79 , H01L27/101 , H01L27/1052 , H01L27/112 , H01L27/11206
摘要： A non-volatile resistive memory is provided. The memory includes at least one non-volatile memory cell and selection circuitry. Each memory cell has a two-terminal nanotube switching device having and a nanotube fabric article disposed between and in electrical communication with two conductive terminals. Selection circuitry is operable to select the two-terminal nanotube switching device for read and write operations. Write control circuitry, responsive to a control signal, supplies write signals to a selected memory cell to induce a change in the resistance of the nanotube fabric article, the resistance corresponding to an informational state of the memory cell. Resistance sensing circuitry in communication with a selected nonvolatile memory cell, senses the resistance of the nanotube fabric article and provides the control signal to the write control circuitry. Read circuitry reads the corresponding informational state of the memory cell.
摘要翻译： 提供了非易失性电阻性存储器。 存储器包括至少一个非易失性存储单元和选择电路。 每个存储单元具有两端纳米管切换装置，其具有设置在两个导电端子之间并与两个导电端子电连通的纳米管织物制品。 选择电路可操作以选择用于读和写操作的两端纳米管切换装置。 响应于控制信号的写控制电路向所选存储单元提供写入信号，以引起纳米管织物物品的电阻变化，该电阻对应于存储单元的信息状态。 与所选择的非易失性存储器单元通信的电阻感测电路感测纳米管织物制品的电阻并将控制信号提供给写入控制电路。 读取电路读取存储单元的相应信息状态。
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10.发明授权Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法公开(公告)号：US08013363B2
公开(公告)日：2011-09-06
申请号：US11835759
申请日：2007-08-08
申请人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
发明人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
IPC分类号： H01L27/10
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C2213/19 , H01L21/8221 , H01L23/5256 , H01L27/0688 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： Under one aspect, a nonvolatile nanotube diode includes: a substrate; a semiconductor element disposed over the substrate, the semiconductor element having an anode and a cathode and capable of forming an electrically conductive pathway between the anode and the cathode; a nanotube switching element disposed over the semiconductor element, the nanotube switching element including a conductive contact and a nanotube fabric element capable of a plurality of resistance states; and a conductive terminal disposed in spaced relation to the conductive contact, wherein the nanotube fabric element is interposed between and in electrical communication with the conductive contact and the conductive contact is in electrical communication with the cathode, and wherein in response to electrical stimuli applied to the anode and the conductive terminal, the nonvolatile nanotube diode is capable of forming an electrically conductive pathway between the anode and the conductive terminal.
摘要翻译： 在一个方面，非易失性纳米管二极管包括：基板; 设置在所述衬底上的半导体元件，所述半导体元件具有阳极和阴极，并且能够在所述阳极和所述阴极之间形成导电通路; 设置在所述半导体元件上的纳米管开关元件，所述纳米管开关元件包括导电接触件和能够具有多个电阻状态的纳米管织物元件; 以及导电端子，其以导电接触件的间隔设置，其中所述纳米管织物元件置于所述导电接触件之间并与所述导电接触件电连通，并且所述导电接触件与所述阴极电连通，并且其中响应于施加到 阳极和导电端子，非易失性纳米管二极管能够在阳极和导电端子之间形成导电通路。
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