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    Film adhesive for semiconductor vacuum processing apparatus
    3.
    发明授权
    Film adhesive for semiconductor vacuum processing apparatus 有权
    半导体真空处理设备的胶粘剂

    公开(公告)号：US08449786B2

    公开(公告)日：2013-05-28

    申请号：US12746810

    申请日：2008-12-18

    申请人： Dean J. Larson ,  Tom Stevenson ,  Victor Wang

    发明人： Dean J. Larson ,  Tom Stevenson ,  Victor Wang

    IPC分类号： B44C1/22 ,  C23F1/00

    CPC分类号： H01L21/67069 ,  B32B37/12 ,  H01L21/67103 ,  H01L21/68757 ,  Y10T156/10 ,  Y10T156/1062 ,  Y10T428/31504

    摘要： A bonded assembly to reduce particle contamination in a semiconductor vacuum chamber such as a plasma processing apparatus is provided, including an elastomeric sheet adhesive bond between mating surfaces of a component and a support member to accommodate thermal stresses. The elastomeric sheet comprises a silicone adhesive to withstand a high shear strain of ≧800% at a temperature range between room temperature and 300° C. such as heat curable high molecular weight dimethyl silicone with optional fillers. The sheet form has bond thickness control for parallelism of bonded surfaces. The sheet adhesive may be cut into pre-form shapes to conform to regularly or irregularly shaped features, maximize surface contact area with mating parts, and can be installed into cavities. Installation can be manually, manually with installation tooling, or with automated machinery. Composite layers of sheet adhesive having different physical properties can be laminated or coplanar.

    摘要翻译： 提供了一种用于减少诸如等离子体处理装置的半导体真空室中的颗粒污染的粘合组件，包括在部件的配合表面和支撑构件之间的弹性片粘合剂粘合以适应热应力。 弹性体片材包含硅氧烷粘合剂，以在室温至300℃的温度范围内承受≥800％的高剪切应变，例如具有任选填料的可热固化的高分子量二甲基硅氧烷。 片材形式具有用于粘结表面平行度的粘结厚度控制。 片状粘合剂可以被切割成预成型形状以符合规则或不规则形状的特征，使与配合部件的表面接触面积最大化，并且可以安装到空腔中。 安装可以手动，手动安装工具或自动化机械。 具有不同物理性质的片状粘合剂的复合层可以层压或共面。

    FILM ADHESIVE FOR SEMICONDUCTOR VACUUM PROCESSING APPARATUS
    4.
    发明申请
    FILM ADHESIVE FOR SEMICONDUCTOR VACUUM PROCESSING APPARATUS 有权
    用于半导体真空处理设备的胶膜粘合剂

    公开(公告)号：US20100304571A1

    公开(公告)日：2010-12-02

    申请号：US12746810

    申请日：2008-12-18

    申请人： Dean J. Larson ,  Tom Stevenson ,  Victor Wang

    发明人： Dean J. Larson ,  Tom Stevenson ,  Victor Wang

    IPC分类号： H01L21/3065 ,  H01L21/306 ,  C23F1/08 ,  B05C13/00 ,  C23C14/34 ,  C23C16/00 ,  B32B37/02 ,  B32B38/04 ,  B32B38/10

    CPC分类号： H01L21/67069 ,  B32B37/12 ,  H01L21/67103 ,  H01L21/68757 ,  Y10T156/10 ,  Y10T156/1062 ,  Y10T428/31504

    摘要： A bonded assembly to reduce particle contamination in a semiconductor vacuum chamber such as a plasma processing apparatus is provided, including an elastomeric sheet adhesive bond between mating surfaces of a component and a support member to accommodate thermal stresses. The elastomeric sheet comprises a silicone adhesive to withstand a high shear strain of ≧800% at a temperature range between room temperature and 300° C. such as heat curable high molecular weight dimethyl silicone with optional fillers. The sheet form has bond thickness control for parallelism of bonded surfaces. The sheet adhesive may be cut into pre-form shapes to conform to regularly or irregularly shaped features, maximize surface contact area with mating parts, and can be installed into cavities. Installation can be manually, manually with installation tooling, or with automated machinery. Composite layers of sheet adhesive having different physical properties can be laminated or coplanar.

    摘要翻译： 提供了一种用于减少诸如等离子体处理装置的半导体真空室中的颗粒污染的粘合组件，包括在部件的配合表面和支撑构件之间的弹性片粘合剂粘合以适应热应力。 弹性体片材包括硅氧烷粘合剂，以在室温和300℃之间的温度范围内承受≥800％的高剪切应变，例如具有任选填料的可热固化的高分子量二甲基硅氧烷。 片材形式具有用于粘结表面平行度的粘结厚度控制。 片状粘合剂可以被切割成预成型形状以符合规则或不规则形状的特征，使与配合部件的表面接触面积最大化，并且可以安装到空腔中。 安装可以手动，手动安装工具或自动化机械。 具有不同物理性质的片状粘合剂的复合层可以层压或共面。

    Plasma processing chamber component having adaptive thermal conductor
    5.
    发明授权
    Plasma processing chamber component having adaptive thermal conductor 有权
    具有自适应热导体的等离子体处理室部件

    公开(公告)号：US08529729B2

    公开(公告)日：2013-09-10

    申请号：US12794907

    申请日：2010-06-07

    申请人： Tom Stevenson ,  Michael Dickens

    发明人： Tom Stevenson ,  Michael Dickens

    IPC分类号： C23F1/00

    CPC分类号： H01L21/67069 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68757 ,  Y10T156/10

    摘要： An assembly comprises a component of a plasma process chamber, a thermal source and a polymer composite therebetween exhibiting a phase transition between a high-thermal conductivity phase and a low-thermal conductivity phase. The temperature-induced phase change polymer can be used to maintain the temperature of the component at a high or low temperature during multi-step plasma etching processes.

    摘要翻译： 组件包括等离子体处理室的组件，热源和聚合物复合材料，其间显示出高热导率相和低热导率相之间的相变。 温度诱导的相变聚合物可用于在多步等离子体蚀刻工艺期间将组分的温度保持在高或低温度。

    PLASMA PROCESSING CHAMBER COMPONENT HAVING ADAPTIVE THERMAL CONDUCTOR
    6.
    发明申请
    PLASMA PROCESSING CHAMBER COMPONENT HAVING ADAPTIVE THERMAL CONDUCTOR 有权
    具有自适应导热体的等离子体处理室组件

    公开(公告)号：US20110300714A1

    公开(公告)日：2011-12-08

    申请号：US12794907

    申请日：2010-06-07

    申请人： Tom Stevenson ,  Michael Dickens

    发明人： Tom Stevenson ,  Michael Dickens

    IPC分类号： H01L21/465 ,  B32B37/00

    CPC分类号： H01L21/67069 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68757 ,  Y10T156/10

    摘要： An assembly comprises a component of a plasma process chamber, a thermal source and a polymer composite therebetween exhibiting a phase transition between a high-thermal conductivity phase and a low-thermal conductivity phase. The temperature-induced phase change polymer can be used to maintain the temperature of the component at a high or low temperature during multi-step plasma etching processes.

    摘要翻译： 组件包括等离子体处理室的组件，热源和聚合物复合材料，其间显示出高热导率相和低热导率相之间的相变。 温度诱导的相变聚合物可用于在多步等离子体蚀刻工艺期间将组分的温度保持在高或低温度。

    Showerhead electrode assemblies for plasma processing apparatuses
    7.
    发明授权
    Showerhead electrode assemblies for plasma processing apparatuses 有权
    用于等离子体处理装置的喷头电极组件

    公开(公告)号：US08679288B2

    公开(公告)日：2014-03-25

    申请号：US12155739

    申请日：2008-06-09

    申请人： Tom Stevenson ,  Rajinder Dhindsa

    发明人： Tom Stevenson ,  Rajinder Dhindsa

    IPC分类号： C23F1/00 ,  H01L21/00 ,  C23C16/00

    CPC分类号： H01L21/3065 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32605 ,  H01L21/67069

    摘要： Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact regions across the backing plate; and at least one interface member separating the backing plate and the thermal control plate, or the thermal control plate and showerhead electrode, at the contact regions, the interface member having a thermally and electrically conductive gasket portion and a particle mitigating seal portion. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

    摘要翻译： 公开了一种喷头电极组件，其包括适于安装在真空室内部的喷头电极; 连接到喷头电极的可选背板; 热控制板，其在跨过所述背板的多个接触区域附接到所述背板或所述喷头电极; 以及至少一个界面构件，其在所述接触区域处分离所述背板和所述热控制板或所述热控制板和喷头电极，所述界面构件具有导热和导电的垫圈部分和颗粒减轻密封部分。 还公开了使用喷头电极组件处理半导体衬底的方法。

    Methods For Stabilizing Contact Surfaces of Electrostatic Chucks
    8.
    发明申请
    Methods For Stabilizing Contact Surfaces of Electrostatic Chucks 有权
    稳定电动卡盘接触面的方法

    公开(公告)号：US20120031427A1

    公开(公告)日：2012-02-09

    申请号：US12850938

    申请日：2010-08-05

    申请人： Chris Kimball ,  Tom Stevenson ,  Peter Muraoka

    发明人： Chris Kimball ,  Tom Stevenson ,  Peter Muraoka

    IPC分类号： B08B7/00

    CPC分类号： B08B7/0064 ,  B08B1/00 ,  H01L21/6831

    摘要： Methods for stabilizing a ceramic contact surface of an electrostatic chuck, wherein the electrostatic chuck can be disposed within a reaction chamber of a semiconductor wafer processing assembly including a radio frequency source and a coolant gas supply are described herein. The method may include: clamping electrostatically a conditioning wafer to the ceramic contact surface of the electrostatic chuck; and cycling an output power of the radio frequency source and an output pressure of the coolant gas supply for multiple hot/cold cycles. Each of the hot/cold cycles includes a hot abrasion state and a cold abrasion state. At the hot abrasion state, the output power of the radio frequency source is relatively high and the output pressure of the coolant gas supply is relatively low to yield a relatively hot conditioning wafer. At the cold abrasion state, the output power of the radio frequency source is relatively low and the output pressure of the coolant gas supply is relatively high to yield a relatively cool conditioning wafer.

    摘要翻译： 本文描述了用于稳定静电卡盘的陶瓷接触表面的方法，其中静电卡盘可以设置在包括射频源和冷却剂气体源的半导体晶片处理组件的反应室内。 该方法可以包括：将调理晶片静电夹持到静电卡盘的陶瓷接触表面; 并且循环射频源的输出功率和多个热/冷循环的冷却剂气体供应的输出压力。 每个热/冷循环包括热磨损状态和冷磨损状态。 在热磨损状态下，射频源的输出功率相对较高，并且冷却剂气体供应的输出压力相对较低以产生相对热调节的晶片。 在冷磨损状态下，射频源的输出功率相对较低，并且冷却剂气体供应的输出压力相对较高以产生相对较冷的调节晶片。

    Showerhead electrode assemblies for plasma processing apparatuses
    9.
    发明申请
    Showerhead electrode assemblies for plasma processing apparatuses 有权
    用于等离子体处理装置的喷头电极组件

    公开(公告)号：US20090305509A1

    公开(公告)日：2009-12-10

    申请号：US12155739

    申请日：2008-06-09

    申请人： Tom Stevenson ,  Rajinder Dhindsa

    发明人： Tom Stevenson ,  Rajinder Dhindsa

    IPC分类号： H01L21/3065 ,  C23C16/44 ,  H01L21/30

    CPC分类号： H01L21/3065 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32605 ,  H01L21/67069

    摘要： Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact regions across the backing plate; and at least one interface member separating the backing plate and the thermal control plate, or the thermal control plate and showerhead electrode, at the contact regions, the interface member having a thermally and electrically conductive gasket portion and a particle mitigating seal portion. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

    摘要翻译： 公开了一种喷头电极组件，其包括适于安装在真空室内部的喷头电极; 连接到喷头电极的可选背板; 热控制板，其在跨过所述背板的多个接触区域附接到所述背板或所述喷头电极; 以及至少一个界面构件，其在所述接触区域处分离所述背板和所述热控制板或所述热控制板和喷头电极，所述界面构件具有导热和导电的垫圈部分和颗粒减轻密封部分。 还公开了使用喷头电极组件处理半导体衬底的方法。

    LIGHT-UP PREVENTION IN ELECTROSTATIC CHUCKS
    10.
    发明申请
    LIGHT-UP PREVENTION IN ELECTROSTATIC CHUCKS 审中-公开
    防静电保护灯防护

    公开(公告)号：US20110024049A1

    公开(公告)日：2011-02-03

    申请号：US12512520

    申请日：2009-07-30

    申请人： Tom Stevenson ,  Daniel Byun ,  Saurabh Ullal ,  Babak Kadkhodayan ,  Rajinder Dhindsa

    发明人： Tom Stevenson ,  Daniel Byun ,  Saurabh Ullal ,  Babak Kadkhodayan ,  Rajinder Dhindsa

    IPC分类号： C23F1/00

    CPC分类号： H01L21/68757 ,  H01J37/32541 ,  H01J37/3255 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/6875

    摘要： An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.

    摘要翻译： 提供一种静电卡盘组件，其包括陶瓷接触层，图案化结合层，导电基板和地下电弧缓解层。 陶瓷接触层和导电基板协作以形成在静电卡盘组件的地下部分中形成的多个混合气体分配通道。 混合气体分配通道中的单个气体分布通道包括由导电基板呈现的相对高导电性的表面和由陶瓷接触层呈现的相对低的电导率。 地下电弧缓解层包括相对较低电导率的层，并且形成在静电卡盘组件的地下部分中的混合气体分配通道的较高电导率表面上。 还提供了半导体晶片处理室。