Doped contact formations
    7.
    发明申请
    Doped contact formations 审中-公开
    掺杂接触层

    公开(公告)号:US20060060639A1

    公开(公告)日:2006-03-23

    申请号:US10946711

    申请日:2004-09-21

    IPC分类号: B23K31/00

    摘要: According to one aspect of the invention, a contact formation and an electronic assembly incorporating the contact formation are provided. The contact formation may include a low temperature solder material and a plurality of dopant material particles within the solder material. The dopant material may include at least one of an insoluble metal, an intermetallic compound, and an oxide. The low temperature solder material may have a first liquidus temperature, and the contact formation may have a second liquidus temperature. The second liquidus temperature may be approximately the same as the first liquidus temperature.

    摘要翻译: 根据本发明的一个方面,提供一种接触形式和包括接触形成的电子组件。 接触形成可以包括焊料材料内的低温焊料材料和多个掺杂剂材料颗粒。 掺杂剂材料可以包括不溶性金属,金属间化合物和氧化物中的至少一种。 低温焊料材料可以具有第一液相线温度,并且接触形成可以具有第二液相线温度。 第二液相线温度可以与第一液相线温度大致相同。