公开(公告)号：US20060067852A1

公开(公告)日：2006-03-30

申请号：US10954959

申请日：2004-09-29

申请人： Daewoong Suh ,  Tiffany Byrne ,  Melissa Baeten ,  Edward Martin

发明人： Daewoong Suh ,  Tiffany Byrne ,  Melissa Baeten ,  Edward Martin

IPC分类号： C22C30/04 ,  C22C12/00 ,  C22C28/00

CPC分类号： C22C28/00 ,  C22C12/00 ,  C22C13/00 ,  C22C30/04 ,  C22C32/00 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/1132 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/32225 ,  H01L2224/48235 ,  H01L2224/48464 ,  H01L2224/48471 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01059 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/16152 ,  H05K3/3463 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A composition includes a tin-containing solder with a melting temperature below about 150° C. The tin-containing solder includes indium, tin, and bismuth as alloy elements, and optionally contains a doping material and/or a second-phase dispersiod. A process includes blending the tin-containing solder under non-alloying conditions to achieve the discrete dispersion of the doping material. A process also includes blending the tin-containing solder with the particulate to achieve the discrete dispersion of the particulate. The composition is also combined with a microelectronic device to form a package. The composition is also combined with a microelectronic device and at least one I/O functionality to form a computing system.

摘要翻译： 组合物包括熔融温度低于约150℃的含锡焊料。含锡焊料包括铟，锡和铋作为合金元素，并且任选地包含掺杂材料和/或第二相分散体。 一种方法包括在非合金化条件下混合含锡焊料以实现掺杂材料的离散分散。 一种方法还包括将含锡焊料与颗粒混合以实现颗粒的离散分散。 组合物还与微电子器件组合以形成包装。 组合物还与微电子器件和至少一个I / O功能组合以形成计算系统。

公开(公告)号：US20060068579A1

公开(公告)日：2006-03-30

申请号：US10954999

申请日：2004-09-29

申请人： Daewoong Suh ,  Saikumar Jayaraman ,  Stephen Lehman ,  Mitesh Patel ,  Tiffany Byrne ,  Edward Martin ,  Mohd Erwan Basiron ,  Wei Keat Loh ,  Sheau Hooi Lim ,  Yoong Tatt Chin

发明人： Daewoong Suh ,  Saikumar Jayaraman ,  Stephen Lehman ,  Mitesh Patel ,  Tiffany Byrne ,  Edward Martin ,  Mohd Erwan Basiron ,  Wei Keat Loh ,  Sheau Hooi Lim ,  Yoong Tatt Chin

IPC分类号： H01L21/44

CPC分类号： H05K3/3436 ,  H01L23/562 ,  H01L24/16 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H05K1/0271 ,  H05K3/3463 ,  H05K2201/10977 ,  H05K2203/0126 ,  Y02P70/613 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A stress-relief layer is formed by dispensing a polymer upon a substrate lower surface under conditions to partially embed a low melting-point solder bump that is disposed upon the lower surface. The stress-relief layer flows against the low melting-point solder bump. A stress-compensation collar is formed on a board to which the substrate is mated, and the stress-compensation collar partially embeds the low melting-point solder bump. An article that exhibits a stress-relief layer and a stress-compensation collar is also included. A computing system that includes the low melting-point solder, the stress-relief layer, and the stress-compensation collar is also included.

摘要翻译： 通过在基底下表面上分配聚合物以部分地嵌入设置在下表面上的低熔点焊料凸点的条件来形成应力消除层。 应力消除层流向低熔点焊料凸块。 应力补偿轴环形成在与基板相配合的基板上，并且应力补偿套环部分嵌入低熔点焊料凸块。 还包括展示应力消除层和应力补偿套环的物品。 还包括包括低熔点焊料，应力消除层和应力补偿环的计算系统。

公开(公告)号：US20060060639A1

公开(公告)日：2006-03-23

申请号：US10946711

申请日：2004-09-21

申请人： Tiffany Byrne ,  Edward Martin ,  Carl Deppisch ,  Daewoong Suh

发明人： Tiffany Byrne ,  Edward Martin ,  Carl Deppisch ,  Daewoong Suh

IPC分类号： B23K31/00

CPC分类号： H05K3/3436 ,  B23K35/0244 ,  B23K35/26 ,  H01L23/49816 ,  H01L2924/0002 ,  H05K3/3463 ,  H05K3/3484 ,  H05K2201/0209 ,  H05K2201/0215 ,  H05K2201/10992 ,  Y02P70/613 ,  H01L2924/00

摘要： According to one aspect of the invention, a contact formation and an electronic assembly incorporating the contact formation are provided. The contact formation may include a low temperature solder material and a plurality of dopant material particles within the solder material. The dopant material may include at least one of an insoluble metal, an intermetallic compound, and an oxide. The low temperature solder material may have a first liquidus temperature, and the contact formation may have a second liquidus temperature. The second liquidus temperature may be approximately the same as the first liquidus temperature.

摘要翻译： 根据本发明的一个方面，提供一种接触形式和包括接触形成的电子组件。 接触形成可以包括焊料材料内的低温焊料材料和多个掺杂剂材料颗粒。 掺杂剂材料可以包括不溶性金属，金属间化合物和氧化物中的至少一种。 低温焊料材料可以具有第一液相线温度，并且接触形成可以具有第二液相线温度。 第二液相线温度可以与第一液相线温度大致相同。

公开(公告)号：US20070190772A1

公开(公告)日：2007-08-16

申请号：US11736280

申请日：2007-04-17

申请人： Daewoong Suh ,  Saikumar Jayaraman ,  Stephen Lehman ,  Mitesh Patel ,  Tiffany Byrne ,  Eward Martin ,  Mohd Erwan Basiron ,  Wei Loh ,  Sheau Lim ,  Yoong Tatt Chin

发明人： Daewoong Suh ,  Saikumar Jayaraman ,  Stephen Lehman ,  Mitesh Patel ,  Tiffany Byrne ,  Eward Martin ,  Mohd Erwan Basiron ,  Wei Loh ,  Sheau Lim ,  Yoong Tatt Chin

IPC分类号： H01L21/44

CPC分类号： H05K3/3436 ,  H01L23/562 ,  H01L24/16 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H05K1/0271 ,  H05K3/3463 ,  H05K2201/10977 ,  H05K2203/0126 ,  Y02P70/613 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A stress-relief layer is formed by dispensing a polymer upon a substrate lower surface under conditions to partially embed a low melting-point solder bump that is disposed upon the lower surface. The stress-relief layer flows against the low melting-point solder bump. A stress-compensation collar is formed on a board to which the substrate is mated, and the stress-compensation collar partially embeds the low melting-point solder bump. An article that exhibits a stress-relief layer and a stress-compensation collar is also included. A computing system that includes the low melting-point solder, the stress-relief layer, and the stress-compensation collar is also included.

摘要翻译： 通过在基底下表面上分配聚合物以部分地嵌入设置在下表面上的低熔点焊料凸点的条件来形成应力消除层。 应力消除层流向低熔点焊料凸块。 应力补偿轴环形成在与基板相配合的基板上，并且应力补偿套环部分嵌入低熔点焊料凸块。 还包括展示应力消除层和应力补偿套环的物品。 还包括包括低熔点焊料，应力消除层和应力补偿环的计算系统。

公开(公告)号：US20130134587A1

公开(公告)日：2013-05-30

申请号：US13744639

申请日：2013-01-18

申请人： Daewoong Suh

发明人： Daewoong Suh

IPC分类号： H01L23/498

CPC分类号： H01L23/49811 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/12 ,  H01L24/81 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81232 ,  H01L2224/81801 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433

摘要： A microelectronic package is provided. The microelectronic package includes a substrate having a plurality of solder bumps disposed on a top side of the substrate anda die disposed adjacent to the top side of the substrate. The die includes a plurality of glassy metal bumps disposed on a bottom side of the die wherein the plurality of glassy metal bumps are to melt the plurality of solder bumps to form a liquid solder layer. The liquid solder layer is to attach the die with the substrate.

摘要翻译： 提供微电子封装。 微电子封装包括具有设置在基板的顶侧上的多个焊料凸块的基板和与基板的顶侧相邻设置的管芯。 芯片包括设置在芯片底部的多个玻璃状金属凸块，其中多个玻璃状金属凸块熔化多个焊料凸块以形成液体焊料层。 液体焊料层将裸片与基板连接。

公开(公告)号：US20100276474A1

公开(公告)日：2010-11-04

申请号：US12837574

申请日：2010-07-16

申请人： Lakshmi Supriya ,  Daewoong Suh

发明人： Lakshmi Supriya ,  Daewoong Suh

IPC分类号： B23K31/02 ,  B23K20/24

CPC分类号： H05K3/321 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/292 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H05K3/102 ,  H05K2203/1131 ,  H05K2203/122 ,  Y10T428/12111 ,  Y10T428/24917 ,  Y10T428/25 ,  Y10T428/256 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： A method of forming an interconnect joint includes providing a first metal layer (210, 310), providing a film (220, 320) including metal particles (221, 321) and organic molecules (222, 322), placing the film over the first metal layer, placing a second metal layer (230, 330) over the film, and sintering the metal particles such that the organic molecules degrade and the first metal layer and the second metal layer are joined together.

摘要翻译： 形成互连接头的方法包括提供第一金属层（210,310），提供包括金属颗粒（221,321）和有机分子（222,322）的膜（220,320），将膜放置在第一 金属层，在膜上放置第二金属层（230,330），并烧结金属颗粒使得有机分子降解，并且第一金属层和第二金属层接合在一起。

公开(公告)号：US07727814B2

公开(公告)日：2010-06-01

申请号：US12218161

申请日：2008-07-10

申请人： Daewoong Suh ,  Amram Eitan ,  Yongki Min

发明人： Daewoong Suh ,  Amram Eitan ,  Yongki Min

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L23/49827 ,  B82Y10/00 ,  C09J7/22 ,  C09J9/02 ,  C09J2201/128 ,  C09J2201/602 ,  C09J2203/326 ,  H01L23/49877 ,  H01L23/5384 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/0566 ,  H01L2224/05676 ,  H01L2224/0568 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13193 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/13666 ,  H01L2224/16145 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/29 ,  H01L2224/29076 ,  H01L2224/29078 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29193 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/83203 ,  H01L2225/06527 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H05K3/323 ,  H05K2201/026 ,  Y10S977/848 ,  Y10S977/932 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A method of interconnecting and an interconnect is provided to connect a first component and a second component of an integrated circuit. The interconnect includes a plurality of Carbon Nanotubes (CNTs), which provide a conducting path between the first component and the second component. The interconnect further includes a passivation layer to fill the gaps between adjacent CNTs. A method of producing Anisotropic Conductive Film (ACF) and an ACF is provided. The ACF includes a plurality of CNTs, which provide a conducting path between a first side of the ACF and a second side of the ACF. The sides of the ACF can also include a conductive curable adhesive layer. In an embodiment, the conductive curable adhesive layer can incorporate a B-stage cross-linkable polymer and silver particles.

摘要翻译： 提供互连和互连的方法来连接集成电路的第一部件和第二部件。 互连包括多个碳纳米管（CNT），其在第一部件和第二部件之间提供导电路径。 互连还包括钝化层以填充相邻CNT之间的间隙。 提供制造各向异性导电膜（ACF）和ACF的方法。 ACF包括多个CNT，其在ACF的第一侧和ACF的第二侧之间提供导电路径。 ACF的侧面还可以包括导电的可固化粘合剂层。 在一个实施方案中，导电可固化粘合剂层可以并入B级可交联聚合物和银颗粒。

公开(公告)号：US07710709B2

公开(公告)日：2010-05-04

申请号：US11694909

申请日：2007-03-30

申请人： Yongki Min ,  Daewoong Suh

发明人： Yongki Min ,  Daewoong Suh

IPC分类号： H01G4/228

CPC分类号： H01G4/005 ,  H01G4/008 ,  H01G4/33 ,  H01L28/40

摘要： Devices and methods for their formation, including electronic devices containing capacitors, are described. In one embodiment, a device includes a substrate and a capacitor is formed on the substrate. The capacitor includes first and second electrodes and a capacitor dielectric between the first and second electrodes. At least one of the first and second electrodes includes a metal layer having carbon nanotubes coupled thereto. In one aspect of certain embodiments, the carbon nanotubes are at least partially coated with an electrically conductive material. In another aspect of certain embodiments, the substrate comprises an organic substrate and the capacitor dielectric comprises a polymer material. Other embodiments are described and claimed.

公开(公告)号：US07705458B2

公开(公告)日：2010-04-27

申请号：US11425353

申请日：2006-06-20

申请人： Daewoong Suh ,  Yongki Min

发明人： Daewoong Suh ,  Yongki Min

IPC分类号： H01L23/488

CPC分类号： H01L24/10 ,  C22C45/10 ,  H01L23/49816 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/351 ,  H05K1/09 ,  H05K1/111 ,  H05K3/3436 ,  H05K2201/0116 ,  H05K2201/10234 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2224/05599

摘要： A foamed bulk metallic glass electrical connection is formed on a substrate of an integrated circuit package. The foamed bulk metallic glass electrical connection exhibits a low modulus that resists cracking during shock and dynamic loading. The foamed bulk metallic glass electrical connection is used as a solder bump for communication between an integrated circuit device and external structures. A process of forming the foamed bulk metallic glass electrical connection includes mixing bulk metallic glass with a blowing agent.

摘要翻译： 在集成电路封装的基板上形成发泡体金属玻璃电连接。 发泡体金属玻璃电气连接显示出低冲击强度和动态载荷下的抗开裂性能。 发泡体金属玻璃电连接用作集成电路器件和外部结构之间的通信的焊料凸块。 形成发泡体金属玻璃电连接的方法包括将块状金属玻璃与发泡剂混合。

公开(公告)号：US20100065246A1

公开(公告)日：2010-03-18

申请号：US12284097

申请日：2008-09-17

申请人： Abhishek Gupta ,  Mike Boyd ,  Carl Deppisch ,  Jinlin Wang ,  Daewoong Suh ,  Brad Drew

发明人： Abhishek Gupta ,  Mike Boyd ,  Carl Deppisch ,  Jinlin Wang ,  Daewoong Suh ,  Brad Drew

IPC分类号： F28F7/00 ,  B23K31/02 ,  B23K1/20

CPC分类号： B23K1/0016 ,  B23K2101/42 ,  B23K2103/12 ,  F28F3/12 ,  F28F21/08 ,  H01L23/42 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/16152 ,  H01L2924/00 ,  H01L2224/0401

摘要： Methods and associated structures of forming an indium containing solder material directly on an active region of a copper HIS is enabled. A copper indium containing solder intermetallic is formed on the active region of the IHS. The solder intermetallic improves the solder-TIM integration process for microelectronic packaging applications.

摘要翻译： 能够直接在铜HIS的有源区上形成含铟焊料的方法和相关结构。 在IHS的有源区上形成含铜铟的焊料金属间化合物。 焊料金属间改善了用于微电子封装应用的焊料-TM集成工艺。