公开(公告)号：US20060189153A1

公开(公告)日：2006-08-24

申请号：US11406595

申请日：2006-04-19

申请人： Daniel Edelstein ,  Alfred Grill ,  Vishnubhai Patel ,  Darryl Restaino

发明人： Daniel Edelstein ,  Alfred Grill ,  Vishnubhai Patel ,  Darryl Restaino

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

摘要： A semiconductor device structure and method for manufacture includes a substrate having a top first layer; a second thin transition layer located on top of the first layer; and, a third layer located on top of the transition layer, wherein the second thin transition layer provides strong adhesion and cohesive strength between the first and third layers of the structure. Additionally, a semiconductor device structure and method for manufacture includes an insulating structure comprising a multitude of dielectric and conductive layers with respective transition bonding layers disposed to enhance interfacial strength among the different layers. Further, an electronic device structure incorporates layers of insulating and conductive materials as intralevel or interlevel dielectrics in a back-end-of-the-line (“BEOL”) wiring structure in which the interfacial strength between different pairs of dielectric films is enhanced by a thin intermediate transition bonding layer.

公开(公告)号：US20050059258A1

公开(公告)日：2005-03-17

申请号：US10662022

申请日：2003-09-12

申请人： Daniel Edelstein ,  Alfred Grill ,  Vishnubhai Patel ,  Darryl Restaino

发明人： Daniel Edelstein ,  Alfred Grill ,  Vishnubhai Patel ,  Darryl Restaino

IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

摘要： A semiconductor device structure and method for manufacture includes a substrate having a top first layer; a second thin transition layer located on top of the first layer; and, a third layer located on top of the transition layer, wherein the second thin transition layer provides strong adhesion and cohesive strength between the first and third layers of the structure. Additionally, a semiconductor device structure and method for manufacture includes an insulating structure comprising a multitude of dielectric and conductive layers with respective transition bonding layers disposed to enhance interfacial strength among the different layers. Further, an electronic device structure incorporates layers of insulating and conductive materials as intralevel or interlevel dielectrics in a back-end-of-the-line (“BEOL”) wiring structure in which the interfacial strength between different pairs of dielectric films is enhanced by a thin intermediate transition bonding layer.

摘要翻译： 半导体器件结构和制造方法包括具有顶部第一层的衬底; 位于所述第一层顶部的第二薄过渡层; 以及位于所述过渡层顶部的第三层，其中所述第二薄过渡层在所述结构的所述第一和第三层之间提供强粘合力和内聚强度。 此外，半导体器件结构和制造方法包括绝缘结构，其包括多个介电层和导电层，其中设置有各自的过渡键合层以增强不同层之间的界面强度。 此外，电子器件结构包括绝缘和导电材料层，作为后端线（“BEOL”）布线结构中的层间或层间电介质，其中不同对的介电膜之间的界面强度由 薄的中间过渡粘合层。

公开(公告)号：US20050245096A1

公开(公告)日：2005-11-03

申请号：US10838849

申请日：2004-05-03

申请人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

发明人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

IPC分类号： C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

摘要翻译： 公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如硅烷衍生物，例如二乙氧基甲基硅烷（DEMS）和有机分子，例如双环庚二烯和环戊烯氧化物。

公开(公告)号：US20080009141A1

公开(公告)日：2008-01-10

申请号：US11481019

申请日：2006-07-05

申请人： Geraud Dubois ,  Stephen M. Gates ,  Alfred Grill ,  Victor Y. Lee ,  Robert D. Miller ,  Son Nguyen ,  Vishnubhai Patel

发明人： Geraud Dubois ,  Stephen M. Gates ,  Alfred Grill ,  Victor Y. Lee ,  Robert D. Miller ,  Son Nguyen ,  Vishnubhai Patel

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31695 ,  C23C16/36 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31053 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835

摘要： Methods of forming dielectric films comprising Si, C, O and H atoms (SiCOH) or Si, C, N and H atoms (SiCHN) that have improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties are provided. Electronic structures including the above materials are also included herein.

摘要翻译： 形成包含Si，C，O和H原子（SiCOH）或Si，C，N和H原子（SiCHN）的介电膜的方法，其具有改善的内聚强度（或等效地，改善的断裂韧性或降低的脆性），并且增加了对 提供诸如应力腐蚀开裂，Cu侵蚀等关键性能的水分降解。 包括上述材料的电子结构也包括在本文中。

公开(公告)号：US20070173071A1

公开(公告)日：2007-07-26

申请号：US11336726

申请日：2006-01-20

申请人： Ali Afzali-Ardakani ,  Stephen Gates ,  Alfred Grill ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel

发明人： Ali Afzali-Ardakani ,  Stephen Gates ,  Alfred Grill ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel

IPC分类号： H01L21/469 ,  H01L23/58

CPC分类号： H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A porous composite material useful in semiconductor device manufacturing, in which the diameter (or characteristic dimension) of the pores and the pore size distribution (PSD) is controlled in a nanoscale manner and which exhibits improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties is provided. The porous composite material is fabricating utilizing at least one bifunctional organic porogen as a precursor compound

摘要翻译： 可用于半导体器件制造的多孔复合材料，其中孔的直径（或特征尺寸）和孔径分布（PSD）以纳米级方式进行控制，并且其表现出改进的内聚强度（或等效地提高的断裂韧性或 降低脆性），并且提供了诸如应力腐蚀开裂，Cu进入和其它关键性能等性能的降低的耐水分性。 多孔复合材料是利用至少一种双功能有机致孔剂作为前体化合物制造的

公开(公告)号：US20070237970A1

公开(公告)日：2007-10-11

申请号：US11763829

申请日：2007-06-15

申请人： Stephan Cohen ,  Stephen Gates ,  Alfred Grill ,  Vishnubhai Patel

发明人： Stephan Cohen ,  Stephen Gates ,  Alfred Grill ,  Vishnubhai Patel

IPC分类号： C23C16/00 ,  B32B9/04

CPC分类号： H01L21/02167 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/12535 ,  Y10T428/24917 ,  Y10T428/249953 ,  H01L2924/00

摘要： A diffusion barrier useful in semiconductor electronic devices, such as multi-level interconnect wiring structures, is provided. The diffusion barrier is characterized as having a low-dielectric constant of less than 3.5, preferably less than 3.0, as well as being capable of substantially preventing Cu and/or oxygen from diffusing into the active device areas of the electronic device. Since the diffusion barrier has a low-dielectric constant, the diffusion barrier has only a minor effect on the effective dielectric constant of the interconnect structure. The low-k diffusion battier includes atoms of Si, C, H and N. The N atoms are non-uniformly distributed within the low-k diffusion barrier. Optionally, the low-k diffusion barrier may include atoms of Ge, O, halogens such as F or any combination thereof.

摘要翻译： 提供了可用于诸如多层互连布线结构的半导体电子器件中的扩散屏障。 扩散阻挡层的特征在于具有小于3.5，优选小于3.0的低介电常数，并且能够基本上防止Cu和/或氧扩散到电子器件的有源器件区域。 由于扩散阻挡层具有低介电常数，所以扩散阻挡层对互连结构的有效介电常数只有较小的影响。 低k扩散阻挡层包括Si，C，H和N的原子.N原子在低k扩散势垒内不均匀分布。 任选地，低k扩散阻挡层可以包括Ge，O的原子，诸如F的卤素或其任何组合。

公开(公告)号：US20070196639A1

公开(公告)日：2007-08-23

申请号：US11190360

申请日：2005-07-27

申请人： Stephen Gates ,  Alfred Grill ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel

发明人： Stephen Gates ,  Alfred Grill ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel

IPC分类号： B32B3/00

CPC分类号： H01B19/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/249967 ,  Y10T428/24997 ,  Y10T428/249978 ,  Y10T428/249979 ,  H01L2924/00

摘要： The present invention provides a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD. The inventive composite material is also characterized by the substantial absence of the broad distribution of larger sized pores which is prevalent in prior art porous composite materials. The porous composite material includes a first solid phase having a first characteristic dimension and a second solid phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less.

摘要翻译： 本发明提供一种多孔复合材料，其中复合材料中的基本上所有的孔都具有小直径约5nm或更小并具有窄PSD的孔。 本发明的复合材料的特征还在于现有技术的多孔复合材料中普遍存在的较大尺寸的孔的基本上不存在。 多孔复合材料包括具有第一特征尺寸的第一固相和由具有第二特征尺寸的孔组成的第二固相，其中至少一个所述相的特征尺寸被控制为约5nm或更小的值 。

公开(公告)号：US20060110937A1

公开(公告)日：2006-05-25

申请号：US11324479

申请日：2006-01-03

申请人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Newmayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

发明人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Newmayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

IPC分类号： H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.