利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

51 条记录 (耗时 0.023 秒)

    IN-PROCESS MEASUREMENT APPARATUS
    1.
    发明申请
    IN-PROCESS MEASUREMENT APPARATUS 审中-公开
    进程测量装置

    公开(公告)号：US20120038385A1

    公开(公告)日：2012-02-16

    申请号：US13208087

    申请日：2011-08-11

    申请人： David Eaglesham ,  Markus Gloeckler

    发明人： David Eaglesham ,  Markus Gloeckler

    IPC分类号： G01R31/26 ,  G01R31/28 ,  H01L31/18

    CPC分类号： H02S50/10 ,  Y10T29/49004

    摘要： An in-process measurement apparatus can be used to determine characteristics of a photovoltaic module. Capacitance measurements of the photovoltaic module are conducted before, during, or after execution of a high-potential leakage test, a performance test, or other tests of the module. The capacitance measurements are used to determine the characteristics of the photovoltaic module, including information regarding depletion width, doping density, film layer thickness, trap concentrations and absorber thickness. The apparatus can also be used to ensure that photovoltaic modules conform to product specifications.

    摘要翻译： 可以使用过程测量装置来确定光伏模块的特性。 光伏组件的电容测量在高电位泄漏测试，性能测试或模块的其它测试执行之前，期间或之后进行。 电容测量用于确定光伏模块的特性，包括有关耗尽宽度，掺杂密度，膜层厚度，阱浓度和吸收体厚度的信息。 该设备还可用于确保光伏模块符合产品规格。

    Photovoltaic grounding
    3.
    发明授权
    Photovoltaic grounding 有权
    光伏接地

    公开(公告)号：US08294303B2

    公开(公告)日：2012-10-23

    申请号：US12722315

    申请日：2010-03-11

    申请人： David Eaglesham ,  Christopher Thompson ,  Michael Schenck

    发明人： David Eaglesham ,  Christopher Thompson ,  Michael Schenck

    IPC分类号： H01H71/08

    CPC分类号： H01L31/02021 ,  H02S99/00 ,  Y02E10/50 ,  Y10T307/50 ,  Y10T307/74

    摘要： Embodiments disclosed include photovoltaic power systems and methods for manufacturing the same. A photovoltaic power system can include a photovoltaic array, a DC to AC inverter, a positive conductor electrically connecting a positive inverter terminal of the DC to AC inverter to the positive array terminal and a negative conductor electrically connecting a negative inverter terminal of the DC to AC inverter to the negative array terminal, a positive-conductor ground electrically connected by a switch to the positive conductor, and a negative-conductor ground electrically connected by a switch to the negative conductor.

    摘要翻译： 公开的实施例包括光伏发电系统及其制造方法。 光伏发电系统可以包括光伏阵列，直流到交流逆变器，将直流正逆变器端子与交流逆变器电连接到正极端子的正导体以及将直流负逆变器端子电连接到负极的负极 AC逆变器连接到负极端子，通过开关与正导体电连接的正导体地线，以及通过开关与负极导体电连接的负极导体接地。

    System and method for making an improved thin film solar cell interconnect
    6.
    发明申请
    System and method for making an improved thin film solar cell interconnect 审中-公开
    用于制造改进的薄膜太阳能电池互连的系统和方法

    公开(公告)号：US20070079866A1

    公开(公告)日：2007-04-12

    申请号：US11245620

    申请日：2005-10-07

    申请人： Peter Borden ,  David Eaglesham

    发明人： Peter Borden ,  David Eaglesham

    IPC分类号： H02N6/00 ,  H01L31/00

    CPC分类号： H01L31/046 ,  H01L31/0465 ,  Y02E10/50

    摘要： In a module of photovoltaic cells, a method of forming the module interconnects includes a single cutting process after the deposition of all active layers. This simplifies the overall process to a set of vacuum steps followed by a set of interconnect steps, and may significantly module quality and yield. According to another aspect, an interconnect forming method includes self-aligned deposition of an insulator. This simplifies the process because no alignment is required. According to another aspect, an interconnect forming method includes a scribing process that results in a much narrower interconnect which may significantly boost cell efficiency, and allow for narrower cell sizes. According to another aspect, an interconnect includes an insulator layer that greatly reduces shunt current through the active layer, which can greatly improve cell efficiency.

    摘要翻译： 在光伏电池的模块中，形成模块互连的方法包括在沉积所有有源层之后的单个切割工艺。 这将整个过程简化为一组真空步骤，随后是一组互连步骤，并且可以显着地模块质量和产量。 根据另一方面，互连形成方法包括绝缘体的自对准沉积。 这简化了过程，因为不需要对齐。 根据另一方面，互连形成方法包括划线过程，其导致更窄的互连，其可以显着提高电池效率，并且允许更窄的电池尺寸。 根据另一方面，互连包括绝缘体层，其大大减少了通过有源层的分流电流，这可以大大提高电池效率。

    Electroless deposition process on a silicon contact
    7.
    发明申请
    Electroless deposition process on a silicon contact 有权
    硅触点上的无电沉积工艺

    公开(公告)号：US20060264043A1

    公开(公告)日：2006-11-23

    申请号：US11385043

    申请日：2006-03-20

    申请人： Michael Stewart ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  David Eaglesham

    发明人： Michael Stewart ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  David Eaglesham

    IPC分类号： H01L21/44

    CPC分类号： C23C18/1893 ,  B82Y30/00 ,  C23C18/1651 ,  C23C18/32 ,  C23C18/34 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76874 ,  H01L21/76879 ,  H01L21/76889

    摘要： Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.

    摘要翻译： 本文所述的实施方案提供了在无电沉积工艺期间在基材上沉积材料的方法以及无电沉积溶液的组合物。 在一个实施例中，衬底包含具有暴露的硅接触表面的接触孔。 在另一个实施例中，衬底包含具有暴露的硅化物接触表面的接触孔。 通过将基板暴露于无电镀沉积工艺，用金属接触材料填充孔。 金属接触材料可以包含钴材料，镍材料或其合金。 在填充孔之前，衬底可以暴露于各种预处理工艺，例如预清洗工艺和激活工艺。 预清洗方法可以在湿式清洁工艺或等离子体蚀刻工艺期间去除有机残余物，天然氧化物和其它污染物。 该方法的实施方案还提供附加层的沉积，例如覆盖层。

    Photovoltaic devices including heterojunctions
    10.
    发明授权
    Photovoltaic devices including heterojunctions 有权
    包括异质结的光伏器件

    公开(公告)号：US08525021B2

    公开(公告)日：2013-09-03

    申请号：US12236759

    申请日：2008-09-24

    申请人： David Eaglesham

    发明人： David Eaglesham

    IPC分类号： H01L31/00

    CPC分类号： H01L31/0336 ,  H01L31/072 ,  H01L31/1828 ,  H01L31/184 ,  Y02E10/543 ,  Y02E10/544 ,  Y02P70/521

    摘要： A photovoltaic cell can include a heterojunction between semiconductor layers. The first semiconductor layer can include a III-V compound semiconductor, the first semiconductor layer positioned over a transparent conductive layer. A second semiconductor layer can include a II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal contact.

    摘要翻译： 光伏电池可以包括半导体层之间的异质结。 第一半导体层可以包括III-V族化合物半导体，第一半导体层位于透明导电层之上。 第二半导体层可以包括II-VI化合物半导体，第二半导体层位于第一半导体层和背面金属接触之间。