摘要:
An improved silicon building block is disclosed. In an embodiment, the silicon building block has at least two vias through it. The silicon building block is doped and the vias filled with a first material, and, optionally, selected ones of the vias filled instead with a second material. In an alternative embodiment, regions of the silicon building block have metal deposited on them.
摘要:
Trace configurations for carrying high-speed digital differential signals provide for reduced conduction loss and improved signal integrity. In one embodiment, a circuit board has a first set of conductive traces disposed on non-conductive material, and a second set of conductive traces parallel to the first set and disposed within the conductive material. The second set is separated from the first set by non-conductive material. Corresponding traces of the first and second sets may be in a stacked configuration. In other embodiments, conductive material may be provided between corresponding traces of the first and second sets resulting in an “I-shaped” or “U-shaped” cross-section. In yet other embodiments, the trace configurations have “T-shaped” and “L-shaped” cross-sections.
摘要:
Trace configurations for carrying high-speed digital differential signals provide for reduced conduction loss and improved signal integrity. In one embodiment, a circuit board has a first set of conductive traces disposed on non-conductive material, and a second set of conductive traces parallel to the first set and disposed within the conductive material. The second set is separated from the first set by non-conductive material. Corresponding traces of the first and second sets may be in a stacked configuration. In other embodiments, conductive material may be provided between corresponding traces of the first and second sets resulting in an “I-shaped” or “U-shaped” cross-section. In yet other embodiments, the trace configurations have “T-shaped” and “L-shaped” cross-sections.
摘要:
According to some embodiments, a system includes an integrated circuit package to support an integrated circuit die. The integrated circuit package may include a plurality of conductive contacts and a decoupling capacitor. The decoupling capacitor may include a positive terminal contact pad coupled to a first one of the plurality of conductive contacts, the positive terminal contact pad comprising a first substantially non-conductive area, and a negative terminal contact pad coupled to a second one of the plurality of conductive contacts, the negative terminal contact pad comprising a second substantially non-conductive area.
摘要:
According to some embodiments, a device includes a first conductive plane electrically coupled to a first terminal associated with a first polarity and a second terminal associated with the first polarity, a second conductive plane electrically coupled to a third terminal associated with a second polarity, and a dielectric disposed between the first conductive plane and the second conductive plane. A first capacitance is present between the first terminal and the third terminal, a second capacitance is present between the second terminal and the third terminal, and the first capacitance and the second capacitance may be substantially dissimilar.
摘要:
According to some embodiments, a capacitor includes a first external capacitor plane comprising a first at least one terminal of a first polarity, and a first internal capacitor plane comprising a second at least one terminal of the first polarity. The second at least one terminal of the first polarity may be electrically coupled to the first at least one terminal of the first polarity, and a total area of the second at least one terminal of the first polarity may be less than a total area of the first at least one terminal of the first polarity.
摘要:
In some embodiments, a capacitor includes a first conductive layer electrically coupled to a first terminal, a second conductive layer electrically coupled to a second terminal, a floated conductive layer disposed between the first and second conductive layers, and a plurality of non-conductive layers respectively disposed between each of the conductive layers. Other embodiments are disclosed and claimed.
摘要:
A multilayer capacitor comprises separate terminals on at least three sides, and on as many as six sides. The capacitor can be fabricated in a large number of different configurations, types, and sizes, depending upon the target application. The separate terminals that are disposed on different sides of the capacitor can be readily coupled to a variety of different adjacent conductors, such as die terminals (including bumpless terminals or bars), IC package terminals (including pads or bars), and the terminals of adjacent discrete components. Methods of fabrication, as well as application of the capacitor to an electronic assembly, are also described.
摘要:
According to some embodiments, an apparatus includes a first conductive pad, a first conductive plane, first dielectric material disposed between the first conductive plane and the first conductive pad, a second conductive plane, second dielectric material disposed between the first conductive plane and the second conductive plane, and a first conductive network. The first conductive network includes a first microvia within the first dielectric material and coupled to the first conductive pad, a first conductive trace within the first conductive plane and coupled to the first microvia, a second microvia within the second dielectric material and coupled to the first conductive trace, a second conductive trace within the second conductive plane and coupled to the second microvia, a third microvia within the second dielectric material and coupled to the second conductive trace, a third conductive trace within the first conductive plane and coupled to the third microvia, and a fourth microvia within the second dielectric material and coupled to the third conductive trace.
摘要:
To provide high-speed, low inductance capacitive decoupling, an integrated circuit (IC) package includes capacitors positioned within the mounting region between a die and an IC package substrate. A variety of types and sizes of capacitors and substrates can be employed in a variety of geometrical arrangements. In some embodiments, capacitors are sandwiched between die terminals or bumps and the substrate conductors or pads, while in other embodiments, capacitors are positioned between bar-type conductors on the surface of the IC package substrate. Methods of fabrication, as well as application of the package to an electronic assembly and to an electronic system, are also described.