Wireless chip and manufacturing method thereof
    2.
    发明授权
    Wireless chip and manufacturing method thereof 有权
    无线芯片及其制造方法

    公开(公告)号:US08790994B2

    公开(公告)日:2014-07-29

    申请号:US13596376

    申请日:2012-08-28

    IPC分类号: H01L21/46

    摘要: It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.

    摘要翻译: 本发明的目的在于降低无线芯片的成本,并且通过实现无线芯片的批量生产,进一步降低无线芯片的成本,此外,提供小型化,轻量化的无线芯片。 根据本发明,提供一种其中从玻璃基板或石英基板剥离的薄膜集成电路形成在第一基材和第二基材之间的无线芯片。 与由硅基板形成的无线芯片相比,根据本发明的无线芯片实现了小型化,薄型化和轻量化。 包括在根据本发明的无线芯片中的薄膜集成电路至少具有具有LDD(轻掺杂漏极)结构的n型薄膜晶体管,具有单个漏极结构的p型薄膜晶体管和导电 层作为天线起作用。

    COIL DEVICE AND MAGNETIC RESONANCE IMAGING APPARATUS
    3.
    发明申请
    COIL DEVICE AND MAGNETIC RESONANCE IMAGING APPARATUS 有权
    线圈装置和磁共振成像装置

    公开(公告)号:US20140167762A1

    公开(公告)日:2014-06-19

    申请号:US14237346

    申请日:2012-07-31

    申请人: Eiji Sugiyama

    发明人: Eiji Sugiyama

    IPC分类号: G01R33/385

    摘要: A coil device (1) in which a first coil (2), a second coil (4) and a third coil (3), each having a flat plate shape, are stacked with one other, wherein the first coil has a clearance section, the third coil has a second clearance section, part or whole of a lead wire (44) drawn out from the inside to the peripheral portion of the second coil while striding over the second coil (4) as well as part or whole of a lead wires (37a, 37b) drawn out from the inside to the peripheral portion of the third coil (3) while striding over the third coil are accommodated in the clearance section, and part or whole of lead wires (27a, 26b) drawn out from the inside to the peripheral portion of the first coil (2) while striding over the first coil are accommodated in the second clearance section.

    摘要翻译: 一种线圈装置(1),其中具有平板形状的第一线圈(2),第二线圈(4)和第三线圈(3)彼此堆叠,其中第一线圈具有间隙部分 第三线圈具有第二间隙部分,引导线(44)的一部分或全部从第二线圈(4)的内部延伸到第二线圈的周边部分,以及部分或全部 在跨越第三线圈的同时从第三线圈(3)的内部向周边部分拉出的引线(37a,37b)容纳在间隙部分中,并且引出部分或全部引线(27a,26b) 从第一线圈(2)的内侧到周边部分跨越第一线圈,容纳在第二间隙部分中。

    Manufacturing method of semiconductor device
    5.
    发明授权
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US07968427B2

    公开(公告)日:2011-06-28

    申请号:US12073617

    申请日:2008-03-07

    IPC分类号: H01L21/30 H01L21/46

    摘要: The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.

    摘要翻译: 本发明提供一种不容易被外部局部压力损坏的半导体器件。 本发明还提供一种以高产率制造不被外部局部压力破坏的高可靠性半导体器件的方法。 在具有使用非单晶半导体层形成的半导体元件的元件层上设置有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体,加热和压接 由此制造半导体器件,将有机化合物或无机化合物的高强度纤维与有机树脂浸渍的元件层和结构体牢固地固定在一起。

    Semiconductor device and manufacturing method of semiconductor device
    7.
    发明授权
    Semiconductor device and manufacturing method of semiconductor device 有权
    半导体器件及半导体器件的制造方法

    公开(公告)号:US07851886B2

    公开(公告)日:2010-12-14

    申请号:US11812813

    申请日:2007-06-21

    IPC分类号: H01L29/06

    摘要: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

    摘要翻译: 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面,该绝缘层用作用于保护的衬底。 在半导体器件中,绝缘层形成在用作天线的导电层上,使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2,并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外,导电层而不是绝缘层不会在半导体器件的侧面露出,并且绝缘层覆盖TFT和导电层。 此外,在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。