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    METHOD FOR FORMING A DIELECTRIC LAYER
    1.
    发明申请
    METHOD FOR FORMING A DIELECTRIC LAYER 审中-公开
    形成介电层的方法

    公开(公告)号：US20080176375A1

    公开(公告)日：2008-07-24

    申请号：US11970654

    申请日：2008-01-08

    申请人： Elke Erben ,  Stephan Kudelka ,  Alfred Kersch ,  Angela Link ,  Matthias Patz ,  Jonas Sundqvist

    发明人： Elke Erben ,  Stephan Kudelka ,  Alfred Kersch ,  Angela Link ,  Matthias Patz ,  Jonas Sundqvist

    IPC分类号： H01L21/31 ,  H01L21/02

    CPC分类号： H01L21/3141 ,  C23C16/0272 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40

    摘要： The present invention relates to a deposition of a dielectric layer. On a substrate having a structured area a crystallization seed layer for a dielectric layer is deposited via an atomic layer deposition technique employing a first and a second precursor on the structured area of the substrate. The first pre-cursor is a compound having the constitutional formula M1(R1Cp)x(R2)4-x, wherein M1 is one of hafnium and zirconium, Cp is cyclopentadienyl, R1 is independently selected of methyl, ethyl and alkyl, R2 is independently selected of hydrogen, methyl, ethyl, alkyl and alkoxyl, and x is one or two. The dielectric layer is deposited on the crystallization seed layer via an atomic layer deposition technique employing a third and a forth precursor wherein the third pre-cursor being a compound having the constitutional formula M2 R3 R4 R5 R6, wherein M2 is one of hafnium or zirconium and R3, R4, R5, and R6 are independently selected of alkyl amines.

    摘要翻译： 本发明涉及电介质层的沉积。 在具有结构区域的基板上，通过使用第一和第二前体的原子层沉积技术在基板的结构化区域上沉积用于电介质层的结晶种子层。 第一个前体是具有结构式M 1（R 1）的化合物，其中R 1，R 2，R 2， 其中M 1是铪和锆中的一种，Cp是环戊二烯基，R 1独立地选自甲基，乙基 和烷基，R 2独立地选自氢，甲基，乙基，烷基和烷氧基，x是一个或两个。 介电层通过使用第三和第四前体的原子层沉积技术沉积在结晶种子层上，其中第三个前体是具有结构式M 2 O 3的化合物 其中M 2是铪或锆中的一种，R 2是R 5 R 4，R 5，R 6和R 6独立地选自烷基胺。

    Method for producing a conductive layer
    3.
    发明申请
    Method for producing a conductive layer 失效
    导电层的制造方法

    公开(公告)号：US20060128128A1

    公开(公告)日：2006-06-15

    申请号：US11296568

    申请日：2005-12-08

    申请人： Bernd Hintze ,  Stephan Kudelka ,  Jonas Sundqvist

    发明人： Bernd Hintze ,  Stephan Kudelka ,  Jonas Sundqvist

    IPC分类号： H01L21/20

    CPC分类号： H01L28/60 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/76846

    摘要： In a method for producing a conductive layer a substrate is provided. On the substrate, a layer comprised of at least two different metal nitrides is provided. Especially, on a surface of the substrate a first metal nitride layer, on a surface of the first metal nitride layer a second metal nitride layer, and on a surface of the second metal nitride layer a third metal nitride layer is deposited.

    摘要翻译： 在制造导电层的方法中，提供了基板。 在衬底上提供由至少两种不同的金属氮化物组成的层。 特别地，在基板的表面上，沉积第一金属氮化物层，在第一金属氮化物层的表面上具有第二金属氮化物层，并且在第二金属氮化物层的表面上沉积第三金属氮化物层。

    Method of producing a conductive layer including two metal nitrides
    5.
    发明授权
    Method of producing a conductive layer including two metal nitrides 失效
    制造包含两个金属氮化物的导电层的方法

    公开(公告)号：US07531418B2

    公开(公告)日：2009-05-12

    申请号：US11296568

    申请日：2005-12-08

    申请人： Bernd Hintze ,  Stephan Kudelka ,  Jonas Sundqvist

    发明人： Bernd Hintze ,  Stephan Kudelka ,  Jonas Sundqvist

    IPC分类号： H01L21/20

    CPC分类号： H01L28/60 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/76846

    摘要： In a method for producing a conductive layer a substrate is provided. On the substrate, a layer includes at least two different metal nitrides. In one embodiment, on a surface of the substrate a first metal nitride layer is deposited, followed by a second metal nitride layer formed thereon. A third metal layer is then deposited on a surface of the second metal nitride layer.

    摘要翻译： 在制造导电层的方法中，提供了基板。 在衬底上，层包括至少两种不同的金属氮化物。 在一个实施例中，在衬底的表面上沉积第一金属氮化物层，随后形成第二金属氮化物层。 然后在第二金属氮化物层的表面上沉积第三金属层。

    Deposition method for transition-metal oxide based dielectric
    6.
    发明申请
    Deposition method for transition-metal oxide based dielectric 审中-公开
    基于过渡金属氧化物的电介质的沉积方法

    公开(公告)号：US20080182427A1

    公开(公告)日：2008-07-31

    申请号：US11698337

    申请日：2007-01-26

    申请人： Lars Oberbeck ,  Uwe Schroeder ,  Johannes Heitmann ,  Stephan Kudelka ,  Tim Boescke ,  Jonas Sundqvist

    发明人： Lars Oberbeck ,  Uwe Schroeder ,  Johannes Heitmann ,  Stephan Kudelka ,  Tim Boescke ,  Jonas Sundqvist

    IPC分类号： H01L29/78 ,  H01L21/31 ,  H01L29/92

    CPC分类号： H01L21/02337 ,  H01L21/02175 ,  H01L21/28194 ,  H01L21/3142 ,  H01L21/31641 ,  H01L27/10805 ,  H01L27/1085 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517

    摘要： The present invention relates to a method for depositing a dielectric material comprising a transition metal oxide. In an initial step, a substrate is provided. In a further step, a first precursor comprising a transition metal containing compound, and a second precursor predominantly comprising at least one of water vapor, ozone, oxygen, or oxygen plasma are sequentially applied for depositing above the substrate a layer of a transition metal containing material. In another step, a third precursor comprising a dopant containing compound, and a fourth precursor predominantly comprising at least one of water vapor, ozone, oxygen, or oxygen plasma are sequentially applied for depositing above the substrate a layer of a dopant containing material. The transition metal comprises at least one of zirconium and hafnium. The dopant comprises at least one of barium, strontium, calcium, niobium, bismuth, magnesium, and cerium.

    摘要翻译： 本发明涉及沉积包含过渡金属氧化物的电介质材料的方法。 在初始步骤中，提供衬底。 在另一步骤中，依次施加包含含过渡金属的化合物的第一前体和主要包含水蒸气，臭氧，氧或氧等离子体中的至少一种的第二前体，以在基底上沉积含有过渡金属的层 材料。 在另一步骤中，顺序地施加包含掺杂剂的化合物的第三前体和主要包含水蒸汽，臭氧，氧或氧等离子体中的至少一种的第四前体，以在衬底上沉积含掺杂剂材料的层。 过渡金属包括锆和铪中的至少一种。 掺杂剂包括钡，锶，钙，铌，铋，镁和铈中的至少一种。

    Selective deposition method
    8.
    发明申请
    Selective deposition method 审中-公开
    选择性沉积法

    公开(公告)号：US20080173917A1

    公开(公告)日：2008-07-24

    申请号：US11655664

    申请日：2007-01-19

    申请人： Matthias Patz ,  Alexey Ivanov ,  Stephan Kudelka

    发明人： Matthias Patz ,  Alexey Ivanov ,  Stephan Kudelka

    IPC分类号： H01L27/108 ,  H01L21/334

    CPC分类号： H01L29/66181 ,  H01L27/1087

    摘要： The invention relates to a deposition method performing the following steps. A substrate is provided which is structured to comprise a first surface and a second surface, which differ in at least one of geometric orientation and vertical distance to a principle surface of the substrate. An etchable layer is deposited on the first surface via an atomic layer deposition technique the deposition technique using a first precursor supplied in an amount sufficient to cover at least parts of the first surface and insufficient to cover the second surface, the first precursor being supplied from a direction to pass the first surface before the second surface. A dielectric layer of at least one of a transition metal oxide and a transition metal nitride is deposited on at least the second surface via an atomic layer deposition technique using a second precursor.

    摘要翻译： 本发明涉及一种执行以下步骤的沉积方法。 提供了一种衬底，其被构造成包括第一表面和第二表面，所述第一表面和第二表面在基底的主要表面的几何取向和垂直距离中的至少一个方面不同。 可蚀刻层通过原子层沉积技术沉积在第一表面上，沉积技术使用以足以覆盖第一表面的至少一部分并且不足以覆盖第二表面的量供应的第一前体，第一前体从 在第二表面之前通过第一表面的方向。 过渡金属氧化物和过渡金属氮化物中的至少一种的电介质层通过使用第二前体的原子层沉积技术沉积在至少第二表面上。

    Selective etching to increase trench surface area
    9.
    发明授权
    Selective etching to increase trench surface area 有权
    选择性蚀刻以增加沟槽表面积

    公开(公告)号：US07157328B2

    公开(公告)日：2007-01-02

    申请号：US11047312

    申请日：2005-01-31

    申请人： Helmut Horst Tews ,  Stephan Kudelka ,  Kenneth T. Settlemyer

    发明人： Helmut Horst Tews ,  Stephan Kudelka ,  Kenneth T. Settlemyer

    IPC分类号： H01L21/8242

    CPC分类号： H01L21/30604 ,  H01L29/66181

    摘要： The surface area of the walls of a trench formed in a substrate is increased. A barrier layer is formed on the walls of the trench such that the barrier layer is thinner near the corners of the trench and is thicker between the corners of the trench. A dopant is introduced into the substrate through the barrier layer to form higher doped regions in the substrate near the corners of the trench and lesser doped regions between the corners of the trench. The barrier layer is removed, and the walls of the trench are etched in a manner that etches the lesser doped regions of the substrate at a higher rate than the higher doped regions of the substrate to widen and lengthen the trench and to form rounded corners at the intersections of the walls of the trench.

    摘要翻译： 在衬底中形成的沟槽的壁的表面积增加。 阻挡层形成在沟槽的壁上，使得阻挡层在沟槽的角部附近更薄，并且在沟槽的角部之间更厚。 通过势垒层将掺杂剂引入到衬底中，以在衬底附近的沟槽的角部附近形成更高的掺杂区域，并且在沟槽的角部之间形成较小的掺杂区域。 去除阻挡层，并且以如下方式蚀刻沟槽的壁，该方式是以比衬底的较高掺杂区域更高的速率蚀刻衬底的较小掺杂区域，以加宽和延长沟槽并且形成圆角 沟渠墙壁的交叉点。

    Selective etching to increase trench surface area
    10.
    发明申请
    Selective etching to increase trench surface area 有权
    选择性蚀刻以增加沟槽表面积

    公开(公告)号：US20060172486A1

    公开(公告)日：2006-08-03

    申请号：US11047312

    申请日：2005-01-31

    申请人： Helmut Tews ,  Stephan Kudelka ,  Kenneth Settlemyer

    发明人： Helmut Tews ,  Stephan Kudelka ,  Kenneth Settlemyer

    IPC分类号： H01L21/8242 ,  H01L29/94

    CPC分类号： H01L21/30604 ,  H01L29/66181

    摘要： The surface area of the walls of a trench formed in a substrate is increased. A barrier layer is formed on the walls of the trench such that the barrier layer is thinner near the corners of the trench and is thicker between the corners of the trench. A dopant is introduced into the substrate through the barrier layer to form higher doped regions in the substrate near the corners of the trench and lesser doped regions between the corners of the trench. The barrier layer is removed, and the walls of the trench are etched in a manner that etches the lesser doped regions of the substrate at a higher rate than the higher doped regions of the substrate to widen and lengthen the trench and to form rounded corners at the intersections of the walls of the trench.

    摘要翻译： 在衬底中形成的沟槽的壁的表面积增加。 阻挡层形成在沟槽的壁上，使得阻挡层在沟槽的角部附近更薄，并且在沟槽的角部之间更厚。 通过势垒层将掺杂剂引入到衬底中，以在衬底附近的沟槽的角部附近形成更高的掺杂区域，并且在沟槽的角部之间形成较小的掺杂区域。 去除阻挡层，并且以如下方式蚀刻沟槽的壁，该方式是以比衬底的较高掺杂区域更高的速率蚀刻衬底的较小掺杂区域，以加宽和延长沟槽并且形成圆角 沟渠墙壁的交叉点。