公开(公告)号：US07882997B2

公开(公告)日：2011-02-08

申请号：US11572105

申请日：2005-07-11

申请人： Elke Zakel ,  Ghassem Azdasht

发明人： Elke Zakel ,  Ghassem Azdasht

IPC分类号： B23K37/04

CPC分类号： H01L24/26 ,  H01L24/80 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/83224 ,  H01L2224/83801 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/19043

摘要： A method and a device for the mutual contacting of two wafer-type component composite configurations made of multiple identical components which are implemented coherently, in particular a semiconductor wafer (12) with a functional component wafer (14), to produce electronic assemblies on the wafer level, in which the component composite configurations are each situated on a receptacle unit (11; 13) and the contact pressure necessary for the contacting between contact metallizations of the component composite configurations to be connected to one another is generated in such a way that a vacuum is generated in a contact chamber which receives the component composite configurations and is delimited by the receptacle units, and the contacting of the contact metallizations is performed by a rear energy impingement of a component composite configuration.

摘要翻译： 一种用于相互接触的两个晶片型部件复合结构相互接触的方法和装置，所述两个晶片型部件复合结构由相干地实现的多个相同部件，特别是具有功能部件晶片（14）的半导体晶片（12）制成，以在其上产生电子组件 晶片级，其中部件复合结构各自位于插座单元（11; 13）上，并且以相互连接的部件复合结构的接触金属化之间的接触所需的接触压力被产生，使得 在接收室中产生真空，该接触室接收组件复合结构，并由容器单元限定，并且接触金属化的接触通过组件复合构造的后能量冲击来执行。

公开(公告)号：US20070272991A1

公开(公告)日：2007-11-29

申请号：US10581819

申请日：2004-12-02

申请人： Elke Zakel ,  Ghassem Azdasht

发明人： Elke Zakel ,  Ghassem Azdasht

IPC分类号： H01L21/00 ,  B23K1/00 ,  H01L29/66

CPC分类号： H01L23/10 ,  B23K26/57 ,  B23K35/262 ,  B23K35/3013 ,  B23K2101/40 ,  H01L21/50 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16 ,  H01L2924/01079

摘要： A method and device for alternately contacting two wafer-like component composite arrangements (12, 14) consisting of a plurality of cohesively designed similar components, in particular of a semiconductor wafer with a function component wafer for manufacturing electronic modules on a wafer level, in which the two component composite arrangements, each provided with contact metallizations on their opposing contact surfaces (38, 39), are brought into a coverage position with their contact metallizations to form contact pairs, in which position the contact metallizations that are to be joined together are pressed against one another, the contact metallizations being thereby contacted by exposing the rear of one of the component composite arrangements (12) to laser radiation (20), the wavelength of the laser radiation being selected as a function of the degree of absorption of the component composite arrangement exposed to laser radiation at the rear, so that a transmission of the laser radiation through the component composite arrangement exposed to the laser radiation at the rear is essentially suppressed or an absorption of the laser radiation takes place essentially in the contact metallizations of one or both component composite arrangements.

摘要翻译： 交替地接触由多个内聚设计的类似部件组成的两个晶片状部件复合布置（12,14）的方法和装置，特别是具有用于在晶片级上制造电子模块的功能元件晶片的半导体晶片， 其中每个在其相对的接触表面（38,39）上设置有接触金属化的双组分复合布置通过它们的接触金属化进入覆盖位置，以形成接触对，在该位置上将要接合在一起的接触金属化 因此，通过将组件复合装置（12）中的一个的后部暴露于激光辐射（20），接触金属化从而接触，激光辐射的波长被选择为吸收程度的函数 组件复合布置暴露在后面的激光辐射，使得传输 通过暴露于后方的激光辐射的组分复合布置的激光辐射基本上被抑制，或者激光辐射的吸收基本上在一个或两个组件复合布置的接触金属化中发生。

公开(公告)号：US06915940B2

公开(公告)日：2005-07-12

申请号：US10474450

申请日：2002-04-12

申请人： Elke Zakel ,  Ghassem Azdasht

发明人： Elke Zakel ,  Ghassem Azdasht

IPC分类号： B23K3/06 ,  B23K101/42 ,  H05K3/34 ,  B23K1/00 ,  B23K5/00 ,  B23K20/14 ,  B23K37/00

CPC分类号： B23K3/0607 ,  B23K3/0623 ,  B23K2101/36 ,  H05K3/3478

摘要： An apparatus for applying solder balls to a substrate and for remelting the solder balls on soldering points of the substrate has a capillary for supplying a solder ball to the soldering points and for placing the solder ball at the free end of the capillary opposite the soldering point, a means for supplying heat to the solder ball to remelt it, and a pressing apparatus for holding down the substrate to prevent the substrate from being resilient when placing and remelting the solder ball.

摘要翻译： 用于将焊球用于衬底并在衬底的焊接点上重新焊接焊球的设备具有毛细管，用于将焊球提供给焊接点，并将焊球放置在与焊接点相对的毛细管自由端处 用于向焊球供热以重新熔化的装置，以及用于按压衬底以防止衬底在放置和重熔焊球时具有弹性的按压装置。

公开(公告)号：US06281577B1

公开(公告)日：2001-08-28

申请号：US08847961

申请日：1997-04-22

申请人： Hans-Hermann Oppermann ,  Elke Zakel ,  Ghassem Azdasht ,  Paul Kasulke

发明人： Hans-Hermann Oppermann ,  Elke Zakel ,  Ghassem Azdasht ,  Paul Kasulke

IPC分类号： H01L2334

CPC分类号： H01L25/0657 ,  H01L25/0652 ,  H01L2225/06517 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2225/06575 ,  H01L2225/06579 ,  H01L2924/0002 ,  H01L2924/00

摘要： Process for the formation of a spatial chip arrangement having several chips (32, 36, 37, 38, 39) arranged in several planes and electrically connected to one another, in which the chips are connected via their peripheral connection surfaces (33) to assigned conducting paths (23) of a conducting-path structure (24, 25) arranged on at least one carrier substrate (21, 22) by the chips being arranged either transverse to the longitudinal extent of the carrier substrate or parallel to the longitudinal extent of the flexibly constructed carrier substrate, as well as a spatial chip arrangement that is formed by means of this process.

摘要翻译： 用于形成具有布置在多个平面中并彼此电连接的多个芯片（32,36,37,38,39）的空间芯片布置的工艺，其中芯片经由其外围连接表面（33）连接到分配 通过芯片布置在至少一个载体基板（21,22）上的导电通路结构（24,25）的导电路径（23）横向于载体基板的纵向延伸或平行于 灵活构造的载体衬底，以及通过该工艺形成的空间芯片布置。

公开(公告)号：US09401298B2

公开(公告)日：2016-07-26

申请号：US11910771

申请日：2006-04-10

申请人： Elke Zakel ,  Ghassem Azdasht

发明人： Elke Zakel ,  Ghassem Azdasht

IPC分类号： H01L21/683 ,  H01L21/687 ,  H01L21/67 ,  H01L23/00

CPC分类号： H01L21/6835 ,  H01L21/67132 ,  H01L21/67144 ,  H01L21/6836 ,  H01L24/31 ,  H01L24/75 ,  H01L24/83 ,  H01L24/86 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2224/16 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/75 ,  H01L2224/75263 ,  H01L2224/75314 ,  H01L2224/7565 ,  H01L2224/7965 ,  H01L2224/81005 ,  H01L2224/81224 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/83851 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/19043 ,  H01L2924/00014

摘要： A method and device for transferring a chip (18) situated on a transfer substrate (26) to a contact substrate (50), and for contacting the chip with the contact substrate, in which the chip, the back side (19) of which is attached adhesively to a support surface of the transfer substrate facing the contact substrate, is charged with laser energy from behind through the transfer substrate, and the chip contacts (59, 60) thereof that are arranged opposite a contact surface (58) of the contact substrate are brought into contact with substrate contacts (56, 57) arranged on the contact surface by means of a pressing device (45, 46) from behind through the transfer substrate, and a thermal bond is created between the chip contacts and the substrate contacts.

摘要翻译： 一种用于将位于转印衬底（26）上的芯片（18）转移到接触衬底（50）并将芯片与接触衬底接触的方法和装置，其中芯片的背面（19） 被粘附到转移基板的面向接触基板的支撑表面上，从后面通过转印基板充满激光能量，并且其与芯片接触（59,60）相对地设置在与基板的接触表面（58）相对的位置 接触基板通过从后面通过转印基板的加压装置（45,46）与布置在接触表面上的基板触点（56,57）接触，并且在芯片触头和基板之间产生热粘合 联系人

公开(公告)号：US07932611B2

公开(公告)日：2011-04-26

申请号：US10581819

申请日：2004-12-02

申请人： Elke Zakel ,  Ghassem Azdasht

发明人： Elke Zakel ,  Ghassem Azdasht

IPC分类号： H01L23/48

CPC分类号： H01L23/10 ,  B23K26/57 ,  B23K35/262 ,  B23K35/3013 ,  B23K2101/40 ,  H01L21/50 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16 ,  H01L2924/01079

摘要： A method and device for alternately contacting two wafer-like component composite arrangements, in which the two component composite arrangements, provided with contact metallizations on their opposing contact surfaces, are brought into a coverage position with their contact metallizations to form contact pairs, in which position the contact metallizations to be joined together are pressed against one another, the contact metallizations being contacted by exposing the rear of one of the component composite arrangements to laser radiation, the wavelength of the laser radiation being selected as a function of the degree of absorption of the component composite arrangement , so that a transmission of the laser radiation through the component composite arrangement exposed to the laser radiation at the rear is essentially suppressed or an absorption of the laser radiation takes place essentially in the contact metallizations of one or both component composite arrangements.

摘要翻译： 用于交替接触两个晶片状部件复合布置的方法和装置，其中在其相对的接触表面上设置有接触金属化的双组分复合布置通过它们的接触金属化进入覆盖位置以形成接触对，其中 定位要接合在一起的接触金属化彼此压靠，接触金属化通过将组件复合结构中的一个的后部暴露于激光辐射而接触，激光辐射的波长被选择为吸收程度的函数 的组件复合布置，使得激光辐射通过暴露于后面的激光辐射的组件复合结构的传输基本上被抑制或激光辐射的吸收基本上在一个或两个组件复合材料的接触金属化中发生 安排

公开(公告)号：US06955943B2

公开(公告)日：2005-10-18

申请号：US10362862

申请日：2002-06-26

申请人： Elke Zakel ,  Ghassem Azdasht

发明人： Elke Zakel ,  Ghassem Azdasht

IPC分类号： H01L21/60 ,  H01L21/68 ,  H05K3/34 ,  H01L21/44

CPC分类号： H05K3/3436 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05569 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/014 ,  H01L2924/12042 ,  H05K3/3478 ,  H05K3/3494 ,  H05K2201/0379 ,  H05K2201/10977 ,  H05K2203/041 ,  H05K2203/043 ,  H05K2203/107 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method is provided for producing a substrate arrangement. The process includes the preparation of a substrate and bringing connecting surfaces of the substrate into contact with inner contacts of a wiring layer, the application of contact material to outer contacts of the wiring layer defining an outer connecting surface arrangement to form base contact bumps (31) and the application of joining material to the base contact bumps to form contact bump tops joined to the base contact bumps, wherein the joining material is applied as joining material moldings (35) and the contact bump tops are formed by at least partial melting of the joining material moldings by the action of laser energy.

摘要翻译： 提供了一种用于制造衬底布置的方法。 该方法包括制备衬底并使衬底的连接表面与布线层的内部触点接触，将接触材料施加到限定外部连接表面布置的布线层的外部触点，以形成基部接触凸块（31 ）和将接合材料施加到基部接触凸起以形成接合到基部接触凸点的接触凸起顶部，其中接合材料作为接合材料模制件（35）施加，并且接触凸起顶部通过至少部分熔化形成 通过激光能量的作用使接合材料成型。

公开(公告)号：US06407457B1

公开(公告)日：2002-06-18

申请号：US09704131

申请日：2000-11-01

申请人： Rolf Aschenbrenner ,  Elke Zakel ,  Hans-Hermann Oppermann ,  Ghassem Azdasht

发明人： Rolf Aschenbrenner ,  Elke Zakel ,  Hans-Hermann Oppermann ,  Ghassem Azdasht

IPC分类号： H01L2348

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L2224/73203 ,  H01L2224/83192 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/00

摘要： An electronic contacting method for contacting a chip having a plurality of conductive contact areas, which are not provided with an additional metallization layer, a carrier substrate is provided, which has a first surface having arranged thereon a plurality of conductive connecting sections. A non-conductive adhesive layer is arranged on the first surface of the carrier substrate and subsequently, the carrier substrate is aligned with a chip to be contacted in such away that a plurality of conductive contact areas on said chip to be contacted is in alignment with the connecting sections on the first surface of said carrier substrate. Then the carrier substrate is connected to the chip to be contacted by means of the adhesive layer in such a way that the connecting sections of the carrier substrate and the contact areas of the chip abut on one another by means of pressure contact, without any intermetallic connection being established.

摘要翻译： 提供一种电子接触方法，用于接触具有多个不具有附加金属化层的导电接触区域的芯片，载体基板，其具有布置有多个导电连接部分的第一表面。 在载体基板的第一表面上布置非导电粘合剂层，随后将载体基板与待接触的芯片对准，使得待接触的所述芯片上的多个导电接触区域与 所述载体基板的第一表面上的连接部分。 然后，载体衬底通过粘合剂层连接到芯片上以使得载体衬底的连接部分和芯片的接触区域通过压力接触彼此抵接，而没有任何金属间化合物 建立连接。

公开(公告)号：US08256131B2

公开(公告)日：2012-09-04

申请号：US10582421

申请日：2004-12-22

申请人： Elke Zakel ,  Ghassem Azdasht

发明人： Elke Zakel ,  Ghassem Azdasht

IPC分类号： F26B3/30

CPC分类号： H01L21/67034 ,  F26B3/30

摘要： Method and device for drying circuit substrates (13), in particular semiconductor substrates, in which a circuit surface (30) of the circuit substrate is flushed using a flushing liquid (10) in a flushing step and the circuit surface is dried in a subsequent drying step, the circuit substrate being moved in the flushing step in the direction of its planar extension transversely and in relation to a liquid level (28) of the flushing liquid in such a way that a liquid meniscus forms at a transition area between the circuit surface and the liquid level, which changes because of the relative movement, and thermal radiation (36) is applied to the transition area wetted by the liquid meniscus in the drying step.

摘要翻译： 用于干燥电路基板（13）的方法和装置，特别是在冲洗步骤中使用冲洗液（10）冲洗电路基板的电路表面（30）的电路基板（13），并且电路表面随后被干燥 干燥步骤，电路基板在冲洗步骤中沿其平面延伸方向横向移动并相对于冲洗液体的液面（28）移动，使得液体弯液面在电路之间的过渡区域处形成 表面和由于相对运动而变化的液面，并且在干燥步骤中将热辐射（36）施加到由液体弯液面润湿的过渡区域。

公开(公告)号：US20080302863A1

公开(公告)日：2008-12-11

申请号：US11666188

申请日：2005-09-26

申请人： Elke Zakel ,  Ghassem Azdasht

发明人： Elke Zakel ,  Ghassem Azdasht

IPC分类号： B23K31/02 ,  B23K3/06

CPC分类号： B23K3/0623 ,  H05K3/3478 ,  H05K2201/10734 ,  H05K2203/0338 ,  H05K2203/041 ,  H05K2203/082

摘要： Method and device for transferring a solder deposit configuration having multiple solder deposits onto a terminal surface configuration of a contact surface of a substrate (36) using a removal of multiple solder deposits from a solder deposit reservoir (25) accommodated in a solder deposit receptacle unit (11) via an isolation unit (12), which is implemented like a template and is situated above the solder deposit reservoir, to implement the solder deposit configuration implemented corresponding to the terminal surface configuration, and using a subsequent transfer of the solder deposit configuration onto the terminal surface configuration of the substrate, the solder deposit reservoir being impinged by partial vacuum through template openings (15) of the isolation unit to transfer the solder deposits from the solder deposit reservoir into the isolation unit, the solder deposit reservoir (25) being ventilated via a floor wall (20) situated diametrically opposite the isolation unit during the partial vacuum impingement (27) by the isolation unit (12).

摘要翻译： 用于将具有多个焊料沉积物的焊料沉积物配置转移到衬底（36）的接触表面的端子表面构造上的方法和装置，其使用从容纳在焊料沉积容器单元中的焊料沉积物储存器（25）去除多个焊料沉积物 （11），其被实现为模板并且位于焊料沉积物储存器上方，以实现对应于端子表面构造实施的焊料沉积配置，并且使用随后的焊料沉积配置的转移 在衬底的端子表面结构上，焊料沉积储存器通过隔离单元的模板开口（15）通过部分真空冲击，以将焊料沉积物从焊料沉积储存器转移到隔离单元中，焊料沉积储存器（25） 通过位于与隔离单元直径相对的地板壁（20）通风 通过隔离单元（12）引起部分真空冲击（27）。