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    Semiconductor device and method of making the same
    3.
    发明授权
    Semiconductor device and method of making the same 有权
    半导体器件及其制造方法

    公开(公告)号：US08278711B2

    公开(公告)日：2012-10-02

    申请号：US12952418

    申请日：2010-11-23

    申请人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Dean Matocha

    发明人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Dean Matocha

    IPC分类号： H01L29/66

    CPC分类号： H01L29/1608 ,  H01L29/0615 ,  H01L29/1095 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7811

    摘要： A substrate having semiconductor material and a surface that supports a gate electrode and defines a surface normal direction is provided. The substrate can include a drift region including a first dopant type. A well region can be disposed adjacent to the drift region and proximal to the surface, and can include a second dopant type. A termination extension region can be disposed adjacent to the well region and extend away from the gate electrode, and can have an effective concentration of second dopant type that is generally less than that in the well region. An adjust region can be disposed between the surface and at least part of the termination extension region. An effective concentration of second dopant type may generally decrease when moving from the termination extension region into the adjust region along the surface normal direction.

    摘要翻译： 提供具有半导体材料的基板和支撑栅电极并限定表面法线方向的表面。 衬底可以包括包括第一掺杂剂类型的漂移区域。 阱区域可以布置成与漂移区域相邻并且靠近表面，并且可以包括第二掺杂剂类型。 端接延伸区域可以邻近阱区域设置并且远离栅电极延伸，并且可以具有通常小于阱区域中的第二掺杂剂类型的有效浓度。 可以在表面和终止延伸区域的至少一部分之间设置调整区域。 当从终止延伸区域沿着表面法线方向移动到调整区域中时，第二掺杂剂类型的有效浓度通常可以降低。

    SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120126321A1

    公开(公告)日：2012-05-24

    申请号：US12952418

    申请日：2010-11-23

    申请人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Dean Matocha

    发明人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Dean Matocha

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/1608 ,  H01L29/0615 ,  H01L29/1095 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7811

    摘要： A substrate having semiconductor material and a surface that supports a gate electrode and defines a surface normal direction is provided. The substrate can include a drift region including a first dopant type. A well region can be disposed adjacent to the drift region and proximal to the surface, and can include a second dopant type. A termination extension region can be disposed adjacent to the well region and extend away from the gate electrode, and can have an effective concentration of second dopant type that is generally less than that in the well region. An adjust region can be disposed between the surface and at least part of the termination extension region. An effective concentration of second dopant type may generally decrease when moving from the termination extension region into the adjust region along the surface normal direction.

    摘要翻译： 提供具有半导体材料的基板和支撑栅电极并限定表面法线方向的表面。 衬底可以包括包括第一掺杂剂类型的漂移区域。 阱区域可以布置成与漂移区域相邻并且靠近表面，并且可以包括第二掺杂剂类型。 端接延伸区域可以邻近阱区域设置并且远离栅电极延伸，并且可以具有通常小于阱区域中的第二掺杂剂类型的有效浓度。 可以在表面和终止延伸区域的至少一部分之间设置调整区域。 当从终止延伸区域沿着表面法线方向移动到调整区域中时，第二掺杂剂类型的有效浓度通常可以降低。

    Multi-service network switch
    8.
    发明授权
    Multi-service network switch 失效
    多业务网络交换机

    公开(公告)号：US06850531B1

    公开(公告)日：2005-02-01

    申请号：US09511534

    申请日：2000-02-23

    申请人： Ramakrishna Rao ,  Charlie Ghahremani ,  Desmond Young ,  Mano Murthy ,  Ben Tseng ,  Ashwath Nagaraj ,  Mehdi Farid ,  Richard Schunk

    发明人： Ramakrishna Rao ,  Charlie Ghahremani ,  Desmond Young ,  Mano Murthy ,  Ben Tseng ,  Ashwath Nagaraj ,  Mehdi Farid ,  Richard Schunk

    IPC分类号： H04L12/54 ,  H04L12/56

    CPC分类号： H04L45/28 ,  H04L45/00 ,  H04L45/22 ,  H04L45/302 ,  H04L45/308 ,  H04L45/586 ,  H04L45/60

    摘要： A multi-service network switch capable of providing multiple network services from a single platform. The switch incorporates a distributed packet forwarding architecture where each of the various cards is capable of making independent forwarding decisions. The switch further allows for dynamic resource management for dynamically assigning modem and ISDN resources to an incoming call. The switch may also include fault management features to guard against single points of failure within the switch. The switch further allows the partitioning of the switch into multiple virtual routers where each virtual router has its own set of resources and a routing table. Each virtual router is further partitioned into virtual private networks for further controlling access to the network. The switch supports policy based routing where specific routing paths are selected based on a domain name, a telephone number, and the like. The switch also provides tiered access of the Internet by defining quality of access levels to each incoming connection request. The switch may further support an IP routing protocol and architecture in which the layer two protocols are independent of the physical interface they run on. Furthermore, the switch includes a generic forwarding interface software for hiding the details of transmitting and receiving packets over different interface types.

    摘要翻译： 一种能够从单一平台提供多种网络服务的多业务网络交换机。 交换机集成了分布式分组转发架构，其中每个各种卡能够进行独立的转发决策。 该交换机进一步允许动态资源管理，以动态地将调制解调器和ISDN资源分配给来电。 交换机还可以包括故障管理特征以防止交换机内的单点故障。 交换机还允许将交换机划分成多个虚拟路由器，其中每个虚拟路由器具有其自己的一组资源和路由表。 每个虚拟路由器被进一步划分成虚拟专用网络，以进一步控制对网络的访问。 交换机支持基于策略的路由，其中​​基于域名，电话号码等选择特定路由路径。 交换机还通过定义每个传入连接请求的访问级别的质量来提供互联网的分层访问。 交换机可以进一步支持IP路由协议和架构，其中第二层协议独立于其运行的物理接口。 此外，该交换机包括用于隐藏通过不同接口类型发送和接收分组的细节的通用转发接口软件。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08536641B1

    公开(公告)日：2013-09-17

    申请号：US13597299

    申请日：2012-08-29

    申请人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Dean Matocha

    发明人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Dean Matocha

    IPC分类号： H01L29/66

    CPC分类号： H01L29/1608 ,  H01L29/0615 ,  H01L29/1095 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7811

    摘要： A semiconductor device includes a substrate comprising a semiconductor material. The substrate has a surface that defines a surface normal direction and includes a P-N junction comprising an interface between a first region and a second region, where the first (second) region includes a first (second) dopant type, so as to have a first (second) conductivity type. The substrate includes a termination extension region disposed adjacent to the P-N junction and having an effective concentration of the second dopant type that is generally the effective concentration of the second dopant type in the second doped region. The substrate includes an adjust region disposed adjacent to the surface and between the surface and at least part of the termination extension region, where the effective concentration of the second dopant type generally decreases when moving from the termination extension region into the adjust region along the surface normal direction.

    摘要翻译： 半导体器件包括包含半导体材料的衬底。 衬底具有限定表面法线方向的表面，并且包括PN结，其包括在第一区域和第二区域之间的界面，其中第一（第二）区域包括第一（第二）掺杂剂类型，以便具有第一 （第二）导电类型。 衬底包括邻近P-N结设置并且具有通常为第二掺杂区域中的第二掺杂剂类型的有效浓度的第二掺杂剂类型的有效浓度的终止延伸区域。 衬底包括与表面相邻并且在表面与终止延伸区域的至少一部分之间布置的调节区域，其中当从端接延伸区域沿着表面移动到调节区域中时，第二掺杂剂类型的有效浓度通常降低 正常方向