Pulsed valve manifold for atomic layer deposition
    6.
    发明授权
    Pulsed valve manifold for atomic layer deposition 有权
    用于原子层沉积的脉冲阀歧管

    公开(公告)号:US09574268B1

    公开(公告)日:2017-02-21

    申请号:US13284738

    申请日:2011-10-28

    IPC分类号: C23C16/455 C23C16/453

    摘要: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

    摘要翻译: 气相沉积装置包括反应器,该反应器包括反应室和用于将蒸汽注入反应室的喷射器。 该装置还包括用于将蒸气输送到喷射器的歧管。 歧管包括具有内孔的歧管主体,在与所述孔的纵向轴线相交的平面内设置在所述主体内的第一分配通道,以及设置在所述主体内并与所述第一分配通道流动连通的多个供应通道,以及 与孔。 每个第一供应通道相对于孔的纵向轴线以锐角设置,并且每个供应通道在与纵向轴线不同的角度位置处与孔连通。 分配通道(因此,供应通道)可以与常见的反应物源连接。 还描述了相关的沉积方法。

    Method and system for injecting chemistry into a supercritical fluid
    7.
    发明申请
    Method and system for injecting chemistry into a supercritical fluid 审中-公开
    将化学物质注入超临界流体的方法和系统

    公开(公告)号:US20060070640A1

    公开(公告)日:2006-04-06

    申请号:US10957417

    申请日:2004-10-01

    摘要: A method and system is described for introducing chemistry into a high pressure fluid for treating a substrate. In particular, the method includes dispersing the chemistry throughout the volume of high pressure fluid in order to promote mixing of the two or more fluids, while the high pressure fluid is circulating through a high pressure processing system.

    摘要翻译: 描述了用于将化学物质引入用于处理基底的高压流体中的方法和系统。 特别地,该方法包括将化学物质分散在整个体积的高压流体中,以便在高压流体循环通过高压处理系统时促进两种或多种流体的混合。

    Susceptor heater shim
    10.
    发明授权
    Susceptor heater shim 有权
    受体加热器垫片

    公开(公告)号:US09202727B2

    公开(公告)日:2015-12-01

    申请号:US13411271

    申请日:2012-03-02

    摘要: A substrate supporting assembly in a reaction space includes a heater, a substrate support member, and a shim positioned between the heater and the substrate support member. The shim may be removably secured between the heater and the substrate support member. The shim may further include an inner surface defining a perimeter of a gap. The gap may be further defined by a bottom surface of the substrate support member and a top surface of the heater. The substrate support member may further include a shoulder positioned radially outside of a substrate support position and wherein the shim inner surface is radially aligned with the substrate support member shoulder.

    摘要翻译: 反应空间中的基板支撑组件包括加热器,基板支撑构件和位于加热器和基板支撑构件之间的垫片。 垫片可以可拆卸地固定在加热器和衬底支撑构件之间。 垫片还可包括限定间隙周长的内表面。 间隙可以由衬底支撑构件的底表面和加热器的顶表面进一步限定。 衬底支撑构件还可以包括位于衬底支撑位置的径向外侧的肩部,并且其中垫片内表面与衬底支撑构件肩部径向对准。