摘要:
Provided are an actinic ray-sensitive or radiation-sensitive resin composition including a compound (A) whose dissolution rate in an alkali developer decreases by the action of an acid, a resin (B) having a group that decomposes by the action of an alkali developer to increase the solubility in the alkali developer and having at least one of a fluorine atom or a silicon atom, and a resin (C) having a phenolic hydroxyl group, different from the resin (B), an actinic ray-sensitive or radiation-sensitive film and a mask blank, each formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.
摘要:
The pattern forming method of the present invention includes: (i) forming a film including an actinic ray-sensitive or radiation-sensitive resin composition containing a compound (A) represented by General Formula (I) shown below; a resin (P) capable of decreasing solubility with respect to a developer including organic solvent by the action of an acid; and a compound (B) capable of generating an acid by irradiation of actinic rays or radiation; (ii) irradiating the film with actinic rays or radiation; (iii) developing the film irradiated with the actinic rays or radiation using a developer including an organic solvent. [Chem. 1] RN-A−X+ (I)
摘要:
There is provided a pattern forming method containing: forming a film by using a radiation-sensitive or actinic ray-sensitive resin composition containing: (A) a onium salt compound containing a nitrogen atom in a cationic moiety; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a resin capable of increasing the polarity by the action of an acid to decrease solubility in a developer containing an organic solvent, exposing the film; and developing the exposed film by using a developer containing an organic solvent to form a negative pattern.
摘要:
According to one embodiment, there is provided an actinic ray- or radiation-sensitive resin composition including (A) a compound represented by a general formula (1) below that generates an acid when exposed to actinic rays or radiation, and (B) a resin.
摘要:
Provided is an actinic-ray- or radiation-sensitive resin composition, including any of compounds of general formula (1) below that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid and a resin that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer.
摘要:
A composition for forming an underlayer film is used for forming an underlayer film under a resist film, the composition including a silicon atom-containing compound and a halogen-based solvent, in which a content of the halogen-based solvent is 1.0 ppb by mass to 50.0 ppm by mass with respect to a total mass of the composition for forming an underlayer film.
摘要:
An actinic ray-sensitive or radiation-sensitive resin composition contains a resin which has a repeating unit having an alkyleneoxy chain and a repeating unit having an aromatic group, and has a concentration of the solid content of 10% by mass or more. A pattern forming method has (i) forming an actinic ray-sensitive or radiation-sensitive film having a film thickness of 1 μm or more on a substrate with an actinic ray-sensitive or radiation-sensitive resin composition containing a resin which has a repeating unit having an alkyleneoxy chain.
摘要:
There is provided a pattern forming method comprising (i) a step of forming a film containing an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the specific formula, (B) a compound different from the compound (A) and capable of generating an acid upon irradiation with an actinic ray or radiation, and (P) a resin that does not react with the acid generated from the compound (A) and is capable of decreasing the solubility for an organic solvent-containing developer by the action of the acid generated from the compound (B), (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern; the actinic ray-sensitive or radiation-sensitive resin composition above; a resist film using the composition.
摘要:
Provided is a method of forming a pattern, including (a) forming a film comprising an actinic-ray- or radiation-sensitive resin composition comprising a resin (P) containing a repeating unit (P1) with a cyclic carbonic acid ester structure and any of repeating units (P2) of general formula (P2-1) below, and a compound (B) that when exposed to actinic rays or radiation, generates an acid, (b) exposing the film to actinic rays or radiation, and (c) developing the exposed film with a developer comprising an organic solvent to thereby obtain a negative pattern.
摘要:
According to one embodiment, there is provided an actinic ray- or radiation-sensitive resin composition containing (A) a resin containing a repeating unit represented by general formula (1) below and a repeating unit that is decomposed by an action of an acid to generate an alkali-soluble group, and (B) a compound that generates the acid when exposed to actinic rays or radiation, where L represents a bivalent connecting group, R1 represents a hydrogen atom or an alkyl group, and Z represents a cyclic acid anhydride structure.