公开(公告)号：US06358439B1

公开(公告)日：2002-03-19

申请号：US08466562

申请日：1995-06-06

申请人： Farid Youssif Aoude ,  Lawrence Daniel David ,  Renuka Shastri Divakaruni ,  Shaji Farooq ,  Lester Wynn Herron ,  Hal Mitchell Lasky ,  Anthony Mastreani ,  Govindarajan Natarajan ,  Srinivasa S. N. Reddy ,  Vivek Madan Sura ,  Rao Venkateswara Vallabhaneni ,  Donald Rene Wall

发明人： Farid Youssif Aoude ,  Lawrence Daniel David ,  Renuka Shastri Divakaruni ,  Shaji Farooq ,  Lester Wynn Herron ,  Hal Mitchell Lasky ,  Anthony Mastreani ,  Govindarajan Natarajan ,  Srinivasa S. N. Reddy ,  Vivek Madan Sura ,  Rao Venkateswara Vallabhaneni ,  Donald Rene Wall

IPC分类号： H01B122

CPC分类号： H05K1/092 ,  H01L21/486 ,  H01L23/49883 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K3/4611 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/31678 ,  H01L2924/00

摘要： A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

摘要翻译： 公开了一种用于在半导体芯片器件的陶瓷衬底封装上填充通孔并形成导电表面图案的铜基膏。 该浆料含有适当粒度和重量比的铝酸铝粉末，以实现烧结产生的通孔和厚膜铜的晶粒尺寸和收缩率控制。 烧结过程中铜材的收缩与陶瓷基体的收缩密切相关。

公开(公告)号：US5925443A

公开(公告)日：1999-07-20

申请号：US758991

申请日：1991-09-10

申请人： Farid Youssif Aoude ,  Lawrence Daniel David ,  Renuka Shastri Divakaruni ,  Shaji Farooq ,  Lester Wynn Herron ,  Hal Mitchell Lasky ,  Anthony Mastreani ,  Govindarajan Natarajan ,  Srinivasa S. N. Reddy ,  Vivek Madan Sura ,  Rao Venkateswara Vallabhaneni ,  Donald Rene Wall

发明人： Farid Youssif Aoude ,  Lawrence Daniel David ,  Renuka Shastri Divakaruni ,  Shaji Farooq ,  Lester Wynn Herron ,  Hal Mitchell Lasky ,  Anthony Mastreani ,  Govindarajan Natarajan ,  Srinivasa S. N. Reddy ,  Vivek Madan Sura ,  Rao Venkateswara Vallabhaneni ,  Donald Rene Wall

IPC分类号： H01L23/12 ,  H01L21/48 ,  H01L23/498 ,  H05K1/09 ,  H05K3/46 ,  H01B1/06

CPC分类号： H05K1/092 ,  H01L21/486 ,  H01L23/49883 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K3/4611 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/31678

摘要： A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

公开(公告)号：US6124041A

公开(公告)日：2000-09-26

申请号：US266338

申请日：1999-03-11

申请人： Farid Youssif Aoude ,  Lawrence Daniel David ,  Renuka Shastri Divakaruni ,  Shaji Farooq ,  Lester Wynn Herron ,  Hal Mitchell Lasky ,  Anthony Mastreani ,  Govindarajan Natarajan ,  Srinivasa S. N. Reddy ,  Vivek Madan Sura ,  Rao Venkateswara Vallabhaneni ,  Donald Rene Wall

发明人： Farid Youssif Aoude ,  Lawrence Daniel David ,  Renuka Shastri Divakaruni ,  Shaji Farooq ,  Lester Wynn Herron ,  Hal Mitchell Lasky ,  Anthony Mastreani ,  Govindarajan Natarajan ,  Srinivasa S. N. Reddy ,  Vivek Madan Sura ,  Rao Venkateswara Vallabhaneni ,  Donald Rene Wall

IPC分类号： H01L23/12 ,  H01L21/48 ,  H01L23/498 ,  H05K1/09 ,  H05K3/46 ,  H01B1/06

CPC分类号： H05K1/092 ,  H01L21/486 ,  H01L23/49883 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K3/4611 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/25 ,  Y10T428/252

摘要： A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

公开(公告)号：US5073180A

公开(公告)日：1991-12-17

申请号：US672517

申请日：1991-03-20

申请人： Shaji Farooq ,  Govindarajan Natarajan ,  Srinivasa S. N. Reddy ,  Richard A. Shelleman ,  Nancy C. Stoffel ,  Rao V. Vallabhaneni

发明人： Shaji Farooq ,  Govindarajan Natarajan ,  Srinivasa S. N. Reddy ,  Richard A. Shelleman ,  Nancy C. Stoffel ,  Rao V. Vallabhaneni

IPC分类号： C03B32/02 ,  C03C3/064 ,  C03C10/00 ,  C03C17/10 ,  C04B35/622 ,  C04B35/64 ,  H05K1/03 ,  H05K1/09 ,  H05K3/46

CPC分类号： H05K3/4629 ,  H05K3/4611 ,  H05K1/0306 ,  H05K1/092 ,  Y10T29/49126 ,  Y10T29/49163

摘要： A method for forming a co-fired glass ceramic structure including the steps of:forming at least one green sheet of a first crystallizable glass in a thermally decomposable binder;metallizing the green sheet with a pattern of conductive paste including conductive metal, a second crystallizable glass and a thermally decomposable binder, the pattern including at least one via;firing the green sheet according to the following firing cycle steps:a. preheating the green sheet to a first temperature in a furnace with a neutral or reducing ambient so as to effect pyrolysis of the thermally decomposable binders, wherein the first temperature is insufficient to coalesce the first crystallizable glass or the conductive paste;b. introducing a steam ambient into the furnace and then heating the green sheet in the furnace at the first temperature to burn off the pyrolyzed binders;c. replacing the steam ambient with a neutral or reducing ambient and raising the temperature to a second temperature to effect densification and crystallization of the first and second glasses;d. maintaining the second temperature for a predetermined time to effect sealing of the at least one via wherein for a first portion of the predetermined time, the ambient in said furnace is a neutral or reducing ambient and for a second portion of the predetermined time, the neutral or reducing ambient is replaced with a steam ambient; ande. cooling the structure.

公开(公告)号：US06569496B1

公开(公告)日：2003-05-27

申请号：US09050491

申请日：1998-03-30

申请人： Donald Rene Wall ,  John Joseph Garant ,  Kevin Michael Prettyman ,  Srinivasa S. N. Reddy

发明人： Donald Rene Wall ,  John Joseph Garant ,  Kevin Michael Prettyman ,  Srinivasa S. N. Reddy

IPC分类号： C23C1608

CPC分类号： H01L21/28556 ,  C23C16/14 ,  C23C16/44

摘要： The present invention discloses a CVD (Chemical Vapor Deposition) process where nickel or alloys thereof, such as, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving nickel or alloys thereof, using an Iodide source, preferably an Iodide salt, such as, Ammonium Iodide or Copper Iodide, with at least one inert stand-off in contact with the receiving metal surface. This invention basically allows the CVD of nickel (Ni) on molybdenum (Mo) or tungsten (W) where the nickel source is physically isolated from the refractory metal surface to be plated using at least one inert material that is in floating contact with the refractory metal surface that needs to be coated with at least one layer of nickel or alloy thereof.

摘要翻译： 本发明公开了一种CVD（化学气相沉积）方法，其中镍或其合金，例如Ni / Cu，Ni / Co沉积在能够使用碘化物源，能够接收镍或其合金的金属表面上，优选地 碘化物盐，例如碘化铵或碘化铜，至少有一个与接收金属表面接触的惰性隔离物。 本发明基本上允许镍（Ni）在钼（Mo）或钨（W）上的CVD，其中镍源与耐火金属表面物理隔离）使用至少一种与耐火材料浮动接触的惰性材料进行电镀 需要涂覆至少一层镍或其合金的金属表面。

公开(公告)号：US06376054B1

公开(公告)日：2002-04-23

申请号：US09249985

申请日：1999-02-10

申请人： Scott I. Langenthal ,  Thomas E. Lombardi ,  Richard Francis Indyk ,  John Ulrich Knickerbocker ,  Srinivasa S. N. Reddy ,  Richard A. Shelleman ,  Rao V. Vallabhaneni ,  Donald Rene Wall

发明人： Scott I. Langenthal ,  Thomas E. Lombardi ,  Richard Francis Indyk ,  John Ulrich Knickerbocker ,  Srinivasa S. N. Reddy ,  Richard A. Shelleman ,  Rao V. Vallabhaneni ,  Donald Rene Wall

IPC分类号： B32B300

CPC分类号： G01R1/0466 ,  G01R1/0408 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A cost-effective surface metallization structure of a TCA carrier is produced by using a high-grit conducting paste to fill TSM vias in the TSM of the TCA carrier. This concept can be applied to alumina substrates with refractory metal conductors or to LCGC substrates with more noble metal conductors.

摘要翻译： 通过使用高粒度导电膏来填充TCA载体的TSM中的TSM通孔，制造了TCA载体的经济有效的表面金属化结构。 该概念可以应用于具有难熔金属导体的氧化铝衬底或具有更贵贵金属导体的LCGC衬底。

公开(公告)号：US06224682B1

公开(公告)日：2001-05-01

申请号：US09489976

申请日：2000-01-21

申请人： Donald Rene Wall ,  John Joseph Garant ,  Kevin Michael Prettyman ,  Srinivasa S. N. Reddy

发明人： Donald Rene Wall ,  John Joseph Garant ,  Kevin Michael Prettyman ,  Srinivasa S. N. Reddy

IPC分类号： C23C1600

CPC分类号： H01L21/28556 ,  C23C16/14 ,  C23C16/44

摘要： The present invention discloses a CVD (Chemical Vapor Deposition) process where nickel or alloys thereof, such as, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving nickel or alloys thereof, using an Iodide source, preferably an Iodide salt, such as, Ammonium Iodide or Copper Iodide, with at least one inert stand-off in contact with the receiving metal surface. This invention basically allows the CVD of nickel (Ni) on molybdenum (Mo) or tungsten (W) where the nickel source is physically isolated from the refractory metal surface to be plated using at least one inert material that is in floating contact with the refractory metal surface that needs to be coated with at least one layer of nickel or alloy thereof.

摘要翻译： 本发明公开了一种CVD（化学气相沉积）方法，其中镍或其合金，例如Ni / Cu，Ni / Co沉积在能够使用碘化物源，能够接收镍或其合金的金属表面上，优选地 碘化物盐，例如碘化铵或碘化铜，至少有一个与接收金属表面接触的惰性隔离物。 本发明基本上允许镍（Ni）在钼（Mo）或钨（W）上的CVD，其中镍源与耐火金属表面物理隔离）使用至少一种与耐火材料浮动接触的惰性材料进行电镀 需要涂覆至少一层镍或其合金的金属表面。

公开(公告)号：US5532031A

公开(公告)日：1996-07-02

申请号：US827657

申请日：1992-01-29

申请人： Shaji Farooq ,  Sampath Purushothaman ,  Srinivasa S. N. Reddy ,  Vivek M. Sura

发明人： Shaji Farooq ,  Sampath Purushothaman ,  Srinivasa S. N. Reddy ,  Vivek M. Sura

IPC分类号： H01L23/498 ,  H05K3/38 ,  B32B15/04 ,  H01L23/48

CPC分类号： H05K3/388 ,  H01L23/49811 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10T428/12549 ,  Y10T428/1259 ,  Y10T428/12715 ,  Y10T428/12722 ,  Y10T428/12806 ,  Y10T428/12889 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12944

摘要： A ceramic substrate having an improved I/O pad adhesion layer. The ceramic substrate has an I/O pad for joining to an I/O pin. The I/O pad includes an improved adhesion layer of TiO, followed by layers of Ti (or Ti and Ni) and a solder wettable layer which may be Au or Pt. Also disclosed are low yield stress solders of Sn/Sb, Sn/Ag, Sn/Cu and Sn/Cu/Ti.

摘要翻译： 具有改进的I / O焊盘粘合层的陶瓷衬底。 陶瓷基板具有用于连接到I / O引脚的I / O焊盘。 I / O焊盘包括改进的TiO的粘合层，随后是Ti（或Ti和Ni）层和可以是Au或Pt的焊料可润湿层。 还公开了Sn / Sb，Sn / Ag，Sn / Cu和Sn / Cu / Ti的低屈服应力焊料。

公开(公告)号：US5613181A

公开(公告)日：1997-03-18

申请号：US360526

申请日：1994-12-21

申请人： Govindarajan Natarajan ,  Srinivasa S. N. Reddy

发明人： Govindarajan Natarajan ,  Srinivasa S. N. Reddy

IPC分类号： C03C17/36 ,  C04B41/52 ,  C04B41/89 ,  C23C26/00 ,  H01L21/48 ,  H01L23/373 ,  B22F7/02 ,  B22F7/04

CPC分类号： C03C17/3607 ,  C03C17/36 ,  C03C17/3649 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C23C26/00 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/4867 ,  H01L23/3731 ,  C03C2217/40 ,  C04B2111/00844 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10T428/12 ,  Y10T428/12007 ,  Y10T428/12167

摘要： A co-sintered ceramic substrate structure is formed through punching and screening of a plurality of ceramic green sheets with a plurality of composite metal pastes and/or inks and laminating the structure. The co-sintered surface metallization comprises dual screened composite metal pastes, one on top of the other and bonded to the sintered ceramic substrate to provide bonding of the surface metallization to the sintered ceramic substrate.

公开(公告)号：US5139975A

公开(公告)日：1992-08-18

申请号：US757782

申请日：1991-09-11

申请人： Lester W. Herron ,  Sarah H. Knickerbocker ,  Ananda H. Kumar ,  Govindarajan Natarajan ,  Srinivasa S. N. Reddy

发明人： Lester W. Herron ,  Sarah H. Knickerbocker ,  Ananda H. Kumar ,  Govindarajan Natarajan ,  Srinivasa S. N. Reddy

IPC分类号： B32B18/00 ,  C04B35/634 ,  C04B35/638 ,  H01L21/48

CPC分类号： C04B35/638 ,  B32B18/00 ,  C04B35/634 ,  H01L21/4857 ,  C04B2235/6562 ,  C04B2235/658 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/345 ,  C04B2237/348 ,  C04B2237/363 ,  C04B2237/565 ,  Y10S428/901 ,  Y10T428/24322

摘要： There is disclosed a sintering arrangement for enhancing the removal of carbon from multilayer ceramic substrate laminate during the sintering thereof. A multilayer ceramic substrate laminate having metallic lines and vias is provided with a reducible metal oxide in close proximity to the substrate laminate. The multilayer ceramic substrate laminate contains a polymeric binder which upon heating depolymerizes into carbon. The substrate laminate is sintered in an atmosphere which is reducing with respect to the reducible metal oxide and which is oxidizing with respect to the carbon.

摘要翻译： 公开了一种烧结装置，用于在烧结期间增强从多层陶瓷衬底层压板去除碳。 具有金属线和通孔的多层陶瓷基板层叠体设置有紧邻基板层叠体的可还原金属氧化物。 多层陶瓷基板层叠体包含聚合物粘合剂，其在加热时解聚成碳。 基板层压体在相对于可还原金属氧化物还原并相对于碳氧化的气氛中烧结。