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    Unipolar semiconductor laser
    2.
    发明授权
    Unipolar semiconductor laser 失效
    单极半导体激光器

    公开(公告)号：US5457709A

    公开(公告)日：1995-10-10

    申请号：US223341

    申请日：1994-04-04

    申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Serge Luryi ,  Carlo Sirtori ,  Deborah L. Sivco

    发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Serge Luryi ,  Carlo Sirtori ,  Deborah L. Sivco

    IPC分类号： H01S3/106 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3402 ,  H01S3/1068 ,  H01S5/0614 ,  H01S5/06243 ,  H01S5/1228 ,  H01S5/3419

    摘要： This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 .mu.m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoper "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.

    摘要翻译： 根据我们所知，本应用公开了第一单极激光器。 激光器的示例性实施例在GaInAs / AlInAs系统中实现并且发射约4.2μm波长的辐射。 其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。 我们已经将激光器命名为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，其包括多个基本上相同的未掺杂的“活性”区域，给定的有源区域通过掺杂的“能量弛豫”区域与邻接的区域分离。 在当前优选实施例中，每个有源区域包括三个耦合的量子阱，被设计成有助于达到群体反转。 在当前优选的实施例中，能量松弛区域是数字渐变间隙区域。 然而，其他能量松弛区也是可能的。 单极激光器中的单极性等离子体可以通过电气“控制”场进行操纵，从而有助于例如光束转向或激光的模态增益的外部控制。 讨论了实现这一点的手段。

    Unipolar semiconductor laser
    4.
    发明授权
    Unipolar semiconductor laser 失效
    单极半导体激光器

    公开(公告)号：US5509025A

    公开(公告)日：1996-04-16

    申请号：US371000

    申请日：1995-01-09

    申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

    发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

    IPC分类号： H01S5/00 ,  H01S3/106 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3402 ,  H01S3/1068 ,  H01S5/0614 ,  H01S5/06243 ,  H01S5/1228 ,  H01S5/1234 ,  H01S5/3419

    摘要： This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 .mu.m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoped "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. Disclosed are also embodiments that rely primarily on "vertical" transitions in a given quantum well. Such lasers preferably comprise superlattice Bragg reflectors. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.

    摘要翻译： 根据我们所知，本应用公开了第一单极激光器。 激光器的示例性实施例在GaInAs / AlInAs系统中实现并且发射约4.2μm波长的辐射。 其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。 我们已经将激光器命名为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，其包括多个基本上相同的未掺杂的“有源”区域，给定的有源区域通过掺杂的“能量弛豫”区域与邻接的区域分离。 在当前优选实施例中，每个有源区域包括三个耦合的量子阱，被设计成有助于达到群体反转。 在当前优选的实施例中，能量松弛区域是数字渐变间隙区域。 然而，其他能量松弛区也是可能的。 公开的还是主要依赖于给定量子阱中的“垂直”跃迁的实施例。 这种激光器优选地包括超晶格布拉格反射器。 单极激光器中的单极性等离子体可以通过电气“控制”场进行操纵，从而有助于例如光束转向或激光的模态增益的外部控制。 讨论了实现这一点的手段。

    Quantum well device for producing localized electron states for detectors and modulators
    5.
    发明授权
    Quantum well device for producing localized electron states for detectors and modulators 失效
    用于产生检测器和调制器的局部电子状态的量子阱器件

    公开(公告)号：US5311009A

    公开(公告)日：1994-05-10

    申请号：US923197

    申请日：1992-07-31

    申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Carlo Sirtori ,  Deborah L. Sivco

    发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Carlo Sirtori ,  Deborah L. Sivco

    IPC分类号： H01L29/12 ,  H01L31/0352 ,  H01L27/12

    CPC分类号： B82Y10/00 ,  H01L29/122 ,  H01L31/0352 ,  Y10S977/759 ,  Y10S977/761

    摘要： In accordance with the invention, a quantum well device provides localized states for electrons having an energy E greater than the barrier height of the constituent quantum wells. The device comprises a confinement quantum well of width L.sub.w equal to an integer number n of deBroglie half wavelengths ##EQU1## and a plurality of adjacent quarter wavelength barriers and wells, each having a thickness equal to an odd number m of deBroglie quarter wavelengths. Constructive interference between the waves partially reflected by the interfaces between adjacent .lambda./4 barriers and .lambda./4 wells leads to the formation of a localized electron state at an energy E in the region of the confinement well. The device can be used in detectors and modulators employing transitions between a bound state within the well and the localized state above the well.

    摘要翻译： 根据本发明，量子阱器件为具有大于构成量子阱的势垒高度的能量E的电子提供局部状态。 该装置包括宽度为Lw的限制量子阱，其等于整数n个deBroglie半波长ve长度屏障和阱，每个具有等于deBroglie四分之一波长的奇数m的厚度。 由相邻λ/ 4屏障和λ/ 4阱之间的界面部分反射的波之间的建构性干扰导致在约束阱区域内以能量E形成局部电子态。 该装置可以用于探测器和调制器中，采用阱内的结合状态和井之上的局部化状态之间的转换。

    Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons
    9.
    发明授权
    Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons 失效
    结合基于表面等离子体激元的波导的长波长半导体激光器

    公开(公告)号：US06301282B1

    公开(公告)日：2001-10-09

    申请号：US09124295

    申请日：1998-07-29

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Jerome Faist ,  Carlo Sirtori

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Jerome Faist ,  Carlo Sirtori

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/10 ,  H01S5/1046 ,  H01S5/323 ,  H01S5/3402 ,  H01S2301/145

    摘要： A long wavelength (e.g., mid-IR to far-IR) semiconductor laser comprises an active region and at least one cladding region characterized in that the cladding region includes a light guiding interface between two materials which have dielectric constants opposite in sign. Consequently, the guided modes are transverse magnetic polarized surface waves (i.e., surface plasmons) which propagate along the interface without the need for a traditional dielectric cladding. In a preferred embodiment, the interface is formed between a semiconductor layer and a metal layer. The complex refractive index of the metal layer preferably has an imaginary component which is much larger than its real component. In an illustrative embodiment, our laser includes a QC active region sandwiched between a pair of cladding regions one of which is a guiding interface based on surface plasmons and the other of which is a dielectric (e.g., semiconductor) structure.

    摘要翻译： 长波长（例如，中红外至红外IR）半导体激光器包括有源区和至少一个包层区，其特征在于包层区包括具有与符号相反的介电常数的两种材料之间的导光界面。 因此，引导模式是横向磁极化表面波（即，表面等离子体激元），其沿着界面传播而不需要传统的电介质包层。 在优选实施例中，界面形成在半导体层和金属层之间。 金属层的复合折射率优选具有远大于其实际分量的虚部。 在说明性实施例中，我们的激光器包括夹在一对包层区域之间的QC有源区域，其中一个是基于表面等离子体激元的引导界面，另一个是电介质（例如半导体）结构。

    Article comprising a dual-wavelength quantum cascade photon source
    10.
    发明授权
    Article comprising a dual-wavelength quantum cascade photon source 失效
    文章包括双波长量子级联光子源

    公开(公告)号：US6144681A

    公开(公告)日：2000-11-07

    申请号：US033250

    申请日：1998-03-02

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01L33/06 ,  H01S5/00 ,  H01S5/34 ,  H01S3/19

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/3402 ,  H01S5/1096

    摘要： The quantum cascade (QC) photon source according to this invention can emit simultaneously at two distinct wavelengths, typically both in the mid-infrared. This is accomplished through provision of a semiconductor layer structure in which, at the proper bias voltage, electrons are injected into an energy level E.sub.3 and then forced to cascade through an intermediate level E.sub.2 before reaching the ground state E.sub.1 of the active region. In the process, photons of energy E.sub.3 -E.sub.2 (wavelength .lambda..sub.1) and E.sub.2 -E.sub.1 (wavelength .lambda..sub.2) are emitted. Dual wavelength photon sources according to this invention can be used in a variety of ways, e.g., to determine the absorption of a gaseous sample at wavelengths .lambda..sub.1 and .lambda..sub.2, exemplarily to determine the concentration of a particular chemical compound in the sample.

    摘要翻译： 根据本发明的量子级联（QC）光子源可以以两个不同的波长同时发射，通常在中红外。 这是通过提供半导体层结构来实现的，其中在适当的偏置电压下，电子被注入到能级E3中，然后在到达有源区的基态E1之前强制级联通过中间电平E2。 在该过程中，发射能量为E3-E2（波长λ1）和E2-E1（波长λ2）的光子。 根据本发明的双波长光子源可以以多种方式使用，例如确定波长λ1和λ2处的气体样品的吸收，例如用于确定样品中特定化合物的浓度。