公开(公告)号：US5457709A

公开(公告)日：1995-10-10

申请号：US223341

申请日：1994-04-04

申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Serge Luryi ,  Carlo Sirtori ,  Deborah L. Sivco

发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Serge Luryi ,  Carlo Sirtori ,  Deborah L. Sivco

IPC分类号： H01S3/106 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3402 ,  H01S3/1068 ,  H01S5/0614 ,  H01S5/06243 ,  H01S5/1228 ,  H01S5/3419

摘要： This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 .mu.m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoper "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.

摘要翻译： 根据我们所知，本应用公开了第一单极激光器。 激光器的示例性实施例在GaInAs / AlInAs系统中实现并且发射约4.2μm波长的辐射。 其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。 我们已经将激光器命名为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，其包括多个基本上相同的未掺杂的“活性”区域，给定的有源区域通过掺杂的“能量弛豫”区域与邻接的区域分离。 在当前优选实施例中，每个有源区域包括三个耦合的量子阱，被设计成有助于达到群体反转。 在当前优选的实施例中，能量松弛区域是数字渐变间隙区域。 然而，其他能量松弛区也是可能的。 单极激光器中的单极性等离子体可以通过电气“控制”场进行操纵，从而有助于例如光束转向或激光的模态增益的外部控制。 讨论了实现这一点的手段。

公开(公告)号：US5502787A

公开(公告)日：1996-03-26

申请号：US445821

申请日：1995-05-22

申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

IPC分类号： G02B6/12 ,  G02B6/122 ,  G02F1/025 ,  H01S5/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34 ,  G02B6/02 ,  G02B6/16

CPC分类号： B82Y20/00 ,  G02B6/122 ,  G02B6/1228 ,  H01S5/20 ,  H01S5/305 ,  H01S5/2004 ,  H01S5/3211 ,  H01S5/3402

摘要： Articles according to the invention include a semiconductor waveguide having a core and a cladding, with the cladding including doped semiconductor material. The doping level is selected such that both the real part n and the imaginary part k of the complex refractive index of the doped material are relatively low, exemplarily n

摘要翻译： 根据本发明的制品包括具有芯和包层的半导体波导，其中包层包含掺杂的半导体材料。 选择掺杂级别使得掺杂材料的复折射率的实部n和虚部k都相对较低，示例性地为n <0.5εINFINITY 1/2和k <1，其中εINININITY为高 材料的频率晶格介电常数。 掺杂水平的适当选择可以导致引导辐射的改进的限制，而不会导致辐射的衰减的过度增加。 本发明示例性地体现在长波长（DIFFERENCE8.5μm）量子级联激光器中。 预期其他实施例。

公开(公告)号：US5311009A

公开(公告)日：1994-05-10

申请号：US923197

申请日：1992-07-31

申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Carlo Sirtori ,  Deborah L. Sivco

发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Carlo Sirtori ,  Deborah L. Sivco

IPC分类号： H01L29/12 ,  H01L31/0352 ,  H01L27/12

CPC分类号： B82Y10/00 ,  H01L29/122 ,  H01L31/0352 ,  Y10S977/759 ,  Y10S977/761

摘要： In accordance with the invention, a quantum well device provides localized states for electrons having an energy E greater than the barrier height of the constituent quantum wells. The device comprises a confinement quantum well of width L.sub.w equal to an integer number n of deBroglie half wavelengths ##EQU1## and a plurality of adjacent quarter wavelength barriers and wells, each having a thickness equal to an odd number m of deBroglie quarter wavelengths. Constructive interference between the waves partially reflected by the interfaces between adjacent .lambda./4 barriers and .lambda./4 wells leads to the formation of a localized electron state at an energy E in the region of the confinement well. The device can be used in detectors and modulators employing transitions between a bound state within the well and the localized state above the well.

摘要翻译： 根据本发明，量子阱器件为具有大于构成量子阱的势垒高度的能量E的电子提供局部状态。 该装置包括宽度为Lw的限制量子阱，其等于整数n个deBroglie半波长ve长度屏障和阱，每个具有等于deBroglie四分之一波长的奇数m的厚度。 由相邻λ/ 4屏障和λ/ 4阱之间的界面部分反射的波之间的建构性干扰导致在约束阱区域内以能量E形成局部电子态。 该装置可以用于探测器和调制器中，采用阱内的结合状态和井之上的局部化状态之间的转换。

公开(公告)号：US5570386A

公开(公告)日：1996-10-29

申请号：US509409

申请日：1995-07-31

申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

IPC分类号： H01L33/00 ,  H01L21/20 ,  H01S3/106 ,  H01S5/00 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3402 ,  H01S3/1068 ,  H01S5/0614 ,  H01S5/06243 ,  H01S5/1228 ,  H01S5/3419 ,  Y10S977/759 ,  Y10S977/833 ,  Y10S977/951

摘要： The disclosed unipolar quantum cascade (QC) laser comprises a multiplicity of essentially identical active regions, with adjacent active regions separated by a superlattice carrier injection/relaxation region. A given active region contains a single quantum well with at least two electron states. Lasing is obtained without global intersubband population inversion. Instead, there is believed to exist local population inversion in a small region of k-space near k=0, corresponding to electron energies approximately within an optical phonon energy (.about.35 meV) from the bottom of the lower subband. A novel design feature that can be used to improve the thermal characteristics of substantially any QC laser is also disclosed.

摘要翻译： 所公开的单极子量子级联（QC）激光器包括多个基本上相同的有源区域，其中相邻的有源区域由超晶格载流子注入/弛豫区域分隔开。 给定的有源区域包含具有至少两个电子态的单量子阱。 没有全局子带数反转获得激光。 相反，相信在k = 0附近的k空间的小区域中存在对应于大约在从下子带底部的光声子能量（DIFFERENCE 35meV）内的电子能量的局部群体反演。 还公开了可用于改善基本上任何QC激光器的热特性的新颖设计特征。

公开(公告)号：US5509025A

公开(公告)日：1996-04-16

申请号：US371000

申请日：1995-01-09

申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

IPC分类号： H01S5/00 ,  H01S3/106 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3402 ,  H01S3/1068 ,  H01S5/0614 ,  H01S5/06243 ,  H01S5/1228 ,  H01S5/1234 ,  H01S5/3419

摘要： This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 .mu.m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoped "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. Disclosed are also embodiments that rely primarily on "vertical" transitions in a given quantum well. Such lasers preferably comprise superlattice Bragg reflectors. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.

摘要翻译： 根据我们所知，本应用公开了第一单极激光器。 激光器的示例性实施例在GaInAs / AlInAs系统中实现并且发射约4.2μm波长的辐射。 其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。 我们已经将激光器命名为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，其包括多个基本上相同的未掺杂的“有源”区域，给定的有源区域通过掺杂的“能量弛豫”区域与邻接的区域分离。 在当前优选实施例中，每个有源区域包括三个耦合的量子阱，被设计成有助于达到群体反转。 在当前优选的实施例中，能量松弛区域是数字渐变间隙区域。 然而，其他能量松弛区也是可能的。 公开的还是主要依赖于给定量子阱中的“垂直”跃迁的实施例。 这种激光器优选地包括超晶格布拉格反射器。 单极激光器中的单极性等离子体可以通过电气“控制”场进行操纵，从而有助于例如光束转向或激光的模态增益的外部控制。 讨论了实现这一点的手段。

公开(公告)号：US5265177A

公开(公告)日：1993-11-23

申请号：US881020

申请日：1992-05-08

申请人： Alfred Y. Cho ,  Deborah L. Sivco ,  Daryoosh Vakhshoori

发明人： Alfred Y. Cho ,  Deborah L. Sivco ,  Daryoosh Vakhshoori

IPC分类号： G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  G02B27/09 ,  H01S5/00

CPC分类号： G02B6/42 ,  G02B19/0028 ,  G02B19/0052 ,  G02B27/09 ,  G02B27/0994 ,  G02B6/4206 ,  G02B2006/12195 ,  G02B6/305 ,  Y10S438/978

摘要： This invention embodies an integrated optical package including an optical component having an asymmetric modal output, and a lens integrated with the component for coupling to another optical component having a large modal area. The coupling is achieved by the use of a Polymeric Elongated Waveguide Emulating (PEWE) lens. In the exemplary embodiment the first optical component is a modulator, and the other optical component is an optical fiber. A facet of the modulator is etched by reactive ion etching (RIE) which allows integration of the PEWE lens on a common substrate. The lens is manufactured using a polymer film on a dielectric cladding layer. The fabrication relies on the remelt and reflow properties of polymer films to provide a smooth adiabatic mode contraction from a circular (optical fiber) mode (.apprxeq.6 .mu.m in diameter) to a semiconductor mode (.apprxeq.1 .mu.m) over a length of 250 .mu.m. The PEWE lens permits coupling with an insertion loss of 0.5 dB and 80 percent coupling efficiency, even though the lens is butt-coupled to a fiber without any external lens. The PEWE lens allows the realization of better than 80 percent direct fiber butt-coupling efficiencies to semiconductor lasers, photodetectors, optical modulators, switches and amplifiers with a simultaneous order of magnitude relaxation of the alignment tolerances typically needed for the coupling of semiconductor devices with single-mode fibers.

公开(公告)号：US5212395A

公开(公告)日：1993-05-18

申请号：US844264

申请日：1992-03-02

申请人： Paul R. Berger ,  Alfred Y. Cho ,  Niloy K. Dutta ,  John Lopata ,  Henry M. O'Bryan, Jr. ,  Deborah L. Sivco ,  George J. Zydzik

发明人： Paul R. Berger ,  Alfred Y. Cho ,  Niloy K. Dutta ,  John Lopata ,  Henry M. O'Bryan, Jr. ,  Deborah L. Sivco ,  George J. Zydzik

IPC分类号： H01L31/10 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/105

CPC分类号： H01L31/022466 ,  H01L31/02161 ,  H01L31/105

摘要： This invention pertains to a p-i-n In.sub.0.53 Ga.sub.0.47 As photodiode having an optically transparent composite top electrode consisting of a thin semitransparent metal layer from 10 to 40 nm thick and a transparent cadmium tin oxide (CTO) layer from 90 to 600 nm thick. The metal layer makes a non-alloyed ohmic contact to the semiconductor surface, acts as a barrier between the semiconductor and the CTO preventing oxidation of the semiconductor from the O.sub.2 in the plasma during reactive magnetron sputtering of the CTO layer, and prevents formation of a p-n junction between the semiconductor and CTO. The CTO functions as the n or p contact, an optical window and an anti-reflection coating. The top electrode also avoids shadowing of the active layer by the top electrode, thus allowing greater collection of incident light. Since the top electrode is non-alloyed, inter-diffusion into the i-region is not relevant, which avoids an increased dark current.

公开(公告)号：US5332690A

公开(公告)日：1994-07-26

申请号：US107541

申请日：1993-08-17

申请人： Alfred Y. Cho ,  Deborah L. Sivco ,  Daryoosh Vakhshoori

发明人： Alfred Y. Cho ,  Deborah L. Sivco ,  Daryoosh Vakhshoori

IPC分类号： G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  G02B27/09 ,  H01S5/00 ,  H01L21/20

CPC分类号： G02B6/42 ,  G02B19/0028 ,  G02B19/0052 ,  G02B27/09 ,  G02B27/0994 ,  G02B6/4206 ,  G02B2006/12195 ,  G02B6/305 ,  Y10S438/978

摘要： This invention embodies an integrated optical package including an optical component having an asymmetric modal output, and a lens integrated with the component for coupling to another optical component having a large modal area. The coupling is achieved by the use of a Polymeric Elongated Waveguide Emulating (PEWE) lens. In the exemplary embodiment the first optical component is a modulator, and the other optical component is an optical fiber. A facet of the modulator is etched by reactive ion etching (REE) which allows integration of the PEWE lens on a common substrate. The lens is manufactured using a polymer film on a dielectric cladding layer. The fabrication relies on the remelt and reflow properties of polymer films to provide a smooth adiabatic mode contraction from a circular (optical fiber) mode (.apprxeq.6 .mu.m in diameter) to a semiconductor mode (.apprxeq.1 .mu.m) over a length of 250 .mu.m. The PEWE lens permits coupling with an insertion loss of 0.5 dB and 80 percent-coupling efficiency, even though the lens is butt-coupled to a fiber without any external lens. The PEWE lens allows the realization of better than 80 percent direct fiber butt-coupling efficiencies to semiconductor lasers, photodetectors, optical modulators, switches and amplifiers with a simultaneous order of magnitude relaxation of the alignment tolerances typically needed for the coupling of semiconductor devices with single-mode fibers.

摘要翻译： 本发明体现了一种集成的光学封装，其包括具有不对称模态输出的光学部件，以及与该部件集成的透镜，用于耦合到具有大模态面积的另一光学部件。 通过使用聚合物伸长波导模拟（PEWE）透镜来实现耦合。 在示例性实施例中，第一光学部件是调制器，另一个光学部件是光纤。 通过反应离子蚀刻（REE）蚀刻调制器的一面，其允许将PEWE透镜集成在公共基板上。 在电介质包覆层上使用聚合物膜制造透镜。 该制造依赖于聚合物膜的重熔和回流性能，以提供从圆形（光纤）模式（直径约6μm）到半导体模式（约1μm）的平滑绝热模式，其长度为250 亩 即使透镜与任何外部透镜的光纤对接，PEWE透镜也能够实现0.5dB和80％耦合效率的插入损耗耦合。 PEWE透镜允许对半导体激光器，光电探测器，光调制器，开关和放大器实现优于80％的直接光纤对接耦合效率，同时具有通过半导体器件与单个耦合的通常所需的对准公差的同时数量级的松弛 模式光纤。

公开(公告)号：US4999697A

公开(公告)日：1991-03-12

申请号：US244753

申请日：1988-09-14

申请人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen

发明人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen

IPC分类号： H01L29/73 ,  G06F11/10 ,  G11C11/56 ,  H01L21/20 ,  H01L21/203 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/08 ,  H01L29/201 ,  H01L29/205 ,  H01L29/737 ,  H03B19/14 ,  H03M1/34 ,  H03M1/36

CPC分类号： B82Y10/00 ,  G06F11/10 ,  G11C11/56 ,  H01L29/0895 ,  H01L29/205 ,  H01L29/7376 ,  H03B19/14 ,  H03M1/368 ,  G11C2211/5614

摘要： A plurality of decoupled quantum wells in a transistor device enables such device to operate with multiple-peak characteristics. The device is suitable for a variety of circuit applications in switching systems and in central processor logic units and memories; specific applications include frequency multipliers, waveform scramblers, parity-bit generators, analog-to digital converters, and multiple-valued logic units.

公开(公告)号：US4902912A

公开(公告)日：1990-02-20

申请号：US366340

申请日：1989-06-13

申请人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen ,  Masakazu Shoji ,  Deborah Sivco

发明人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen ,  Masakazu Shoji ,  Deborah Sivco

IPC分类号： G11C11/56 ,  H01L29/76 ,  H01L29/88 ,  H03B19/16

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  G11C11/56 ,  H01L29/7606 ,  H01L29/882 ,  H03B19/16 ,  G11C2211/5614

摘要： A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant-tunneling structure.

摘要翻译： 具有多个负电阻区域并且在这些区域中具有基本相等的电流峰值的半导体集成谐振隧道装置可用作高度紧凑的元件，例如在设计用于三元逻辑运算，倍频，波形加扰，存储器操作 奇偶校验位产生和同轴线驱动。 该器件可以通过在衬底上的层沉积制成，并且包括在触点之间的谐振隧穿结构，使得并排的第一和第三触点在一侧，并且第二触点位于谐振隧道的相反侧 结构体。