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73 条记录 (耗时 0.187 秒)

    CVD flowable gap fill
    1.
    发明授权
    CVD flowable gap fill 有权
    CVD可流动缝隙填充

    公开(公告)号：US07629227B1

    公开(公告)日：2009-12-08

    申请号：US11925514

    申请日：2007-10-26

    申请人： Feng Wang ,  Victor Y. Lu ,  Brian Lu ,  Wai-Fan Yau ,  Nerissa Draeger

    发明人： Feng Wang ,  Victor Y. Lu ,  Brian Lu ,  Wai-Fan Yau ,  Nerissa Draeger

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76224

    摘要： Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

    摘要翻译： 提供了通过产生可流动的含氧化硅膜在衬底上衬里和/或填充间隙的方法。 所述方法包括将气相含硅前体和氧化剂反应物引入含有基材的反应室中，使得在基材上形成冷凝的可流动的膜。 可流动膜至少部分地填充衬底上的间隙，然后转换成氧化硅膜。 在某些实施方案中，所述方法包括在形成膜中使用催化剂，例如亲核试剂或鎓催化剂。 催化剂可以并入到一种反应物中和/或作为单独的反应物引入。 还提供了将可流动膜转化为固体电介质膜的方法。 本发明的方法可用于对高纵横比间隙进行线或填充，包括具有3:1至10:1的纵横比的间隙。

    CVD flowable gap fill
    2.
    发明授权
    CVD flowable gap fill 有权
    CVD可流动缝隙填充

    公开(公告)号：US08187951B1

    公开(公告)日：2012-05-29

    申请号：US12625468

    申请日：2009-11-24

    申请人： Feng Wang ,  Victor Y. Lu ,  Brian Lu ,  Wai-Fan Yau ,  Nerissa Draeger

    发明人： Feng Wang ,  Victor Y. Lu ,  Brian Lu ,  Wai-Fan Yau ,  Nerissa Draeger

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76224

    摘要： Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

    摘要翻译： 提供了通过产生可流动的含氧化硅膜在衬底上衬里和/或填充间隙的方法。 所述方法包括将气相含硅前体和氧化剂反应物引入含有基材的反应室中，使得在基材上形成冷凝的可流动的膜。 可流动膜至少部分地填充衬底上的间隙，然后转换成氧化硅膜。 在某些实施方案中，所述方法包括在形成膜中使用催化剂，例如亲核试剂或鎓催化剂。 催化剂可以并入到一种反应物中和/或作为单独的反应物引入。 还提供了将可流动膜转化为固体电介质膜的方法。 本发明的方法可以用于线或填充高纵横比间隙，包括具有3:1至10:1的纵横比的间隙。

    Density gradient-free gap fill
    3.
    发明授权
    Density gradient-free gap fill 有权
    密度无梯度填充

    公开(公告)号：US07888273B1

    公开(公告)日：2011-02-15

    申请号：US11834581

    申请日：2007-08-06

    申请人： Feng Wang ,  Victor Y. Lu ,  Brian Lu ,  Wai-Fan Yau

    发明人： Feng Wang ,  Victor Y. Lu ,  Brian Lu ,  Wai-Fan Yau

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/76224

    摘要： Multi-cycle methods result in dense, seamless and void-free dielectric gap fill are provided. The methods involve forming liquid or flowable films that partially fill a gap, followed by a solidification and/or anneal process that uniformly densifies the just-formed film. The thickness of the layer formed is such that the subsequent anneal process creates a film that does not have a density gradient. The process is then repeated as necessary to wholly or partially fill or line the gap as desired. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios greater than about 6:1 with widths less than about 0.13 μm.

    摘要翻译： 多循环方法可提供密集，无缝隙和无空隙的电介质间隙填充。 所述方法包括形成部分填充间隙的液体或可流动膜，随后进行均匀地致密刚形成膜的凝固和/或退火工艺。 所形成的层的厚度使得随后的退火工艺产生不具有密度梯度的膜。 然后根据需要重复该过程以根据需要完全或部分填充或排列间隙。 本发明的方法可用于对高纵横比间隙进行排列或填充，包括具有大于约6:1的纵横比的间隙，宽度小于约0.13μm。

    CVD plasma assisted low dielectric constant films
    7.
    发明授权
    CVD plasma assisted low dielectric constant films 有权
    CVD等离子体辅助低介电常数膜

    公开(公告)号：US07205249B2

    公开(公告)日：2007-04-17

    申请号：US10958772

    申请日：2004-10-05

    申请人： David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

    发明人： David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835

    摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10–250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10–30% of the duty cycle.

    摘要翻译： 一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫 或盖层邻近其它电介质层。 氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 3 SiH 3或二甲基硅烷（CH 3 3）2 / SO 2 H 2 O 2，和一氧化二氮N 2 O，RF功率水平为约10至200W，或脉冲RF功率水平为约20至250 W占用周期的10-30％。