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12 条记录 (耗时 0.027 秒)

    Methyl chloroform-free desmear process in additive circuitization
    6.
    发明授权
    Methyl chloroform-free desmear process in additive circuitization 失效
    甲基无氯化除垢工艺的加成电路

    公开(公告)号：US5311660A

    公开(公告)日：1994-05-17

    申请号：US15742

    申请日：1993-02-10

    申请人： Warren A. Alpaugh ,  Anilkumar C. Bhatt ,  Michael J. Canestaro ,  Robert J. Day ,  Edmond O. Fey ,  John E. Larrabee

    发明人： Warren A. Alpaugh ,  Anilkumar C. Bhatt ,  Michael J. Canestaro ,  Robert J. Day ,  Edmond O. Fey ,  John E. Larrabee

    IPC分类号： H05K3/26 ,  H05K3/00 ,  H05K3/42 ,  H01K3/10

    CPC分类号： H05K3/0055 ,  H05K2203/0783 ,  H05K2203/0789 ,  H05K2203/0796 ,  H05K2203/081 ,  H05K2203/088 ,  Y10T29/49165

    摘要： Disclosed is a method of drilling, desmearing, and additively circuitizing a printed circuit board. The printed circuit board is drilled under conditions which produce glass and polymer smeared vias and through holes. The particulate debris is removed by vapor blasting the drilled printed circuit board. Next the printed circuit board is soaked in a solvent to swell the drill smear on the circuit interplanes of the printed circuit board. This solvent is then removed by entrainment in a gas, and a stream of an aqueous, acidic, oxidizing solution is passed through the printed circuit board holes to remove swollen smear in the thru holes and produce an etchback of conductors. After a water rinse an aqueous reducing solution is passed through the printed circuit board to reduce and remove aqueous acidic oxidizing solution, e.g., residual aqueous acid oxidizing solution. The printed circuit board is rinsed to remove the aqueous reducing solution. The surface of the printed circuit board is then seeded, the intended circuitization is photolithographically defined on the printed circuit board, and the circuitization, including the surface circuitization and the plated through hole circuitization, is additively plated.

    摘要翻译： 公开了一种对印刷电路板进行钻孔，去除和附加电路化的方法。 印刷电路板在产生玻璃和聚合物涂抹通孔和通孔的条件下钻孔。 通过对钻孔的印刷电路板进行蒸气喷射除去颗粒物。 接下来，将印刷电路板浸泡在溶剂中以使印刷电路板的电路插板上的钻头污迹膨胀。 然后通过夹带在气体中除去该溶剂，并且将水性，酸性氧化溶液流通过印刷电路板孔，以除去通孔中的溶胀污迹并产生导体回蚀。 在水冲洗之后，将水性还原溶液通过印刷电路板以减少并除去酸性氧化性水溶液，例如残留的酸性水溶液。 漂洗印刷电路板以除去还原水溶液。 然后将印刷电路板的表面接种，将预期的电路光刻地定义在印刷电路板上，并且包括表面电路化和电镀通孔电路的电路被附加电镀。

    Electroless plating with bi-level control of dissolved oxygen, with specific location of chemical maintenance means
    7.
    发明授权
    Electroless plating with bi-level control of dissolved oxygen, with specific location of chemical maintenance means 失效
    化学镀具有双层控制溶解氧，具有化学维护方式的具体位置

    公开(公告)号：US4967690A

    公开(公告)日：1990-11-06

    申请号：US508510

    申请日：1990-04-12

    申请人： Edmond O. Fey ,  Peter Haselbauer ,  Dae Y. Jung ,  Ronald A. Kaschak ,  Hans-Dieter Kilthau ,  Roy H. Magnuson ,  Robert J. Wagner

    发明人： Edmond O. Fey ,  Peter Haselbauer ,  Dae Y. Jung ,  Ronald A. Kaschak ,  Hans-Dieter Kilthau ,  Roy H. Magnuson ,  Robert J. Wagner

    IPC分类号： C23C18/16 ,  C23C18/40 ,  H05K3/18

    CPC分类号： C23C18/40 ,  C23C18/1619 ,  C23C18/1682 ,  C23C18/1683 ,  H05K3/187

    摘要： Nodule formation in a continuous electroless copper plating system is minimized by independently controlling the dissolved oxygen contents on the plating solution in the bath and in the associated external piping. The level of dissolved oxygen in the plating tank is maintained at a value such that satisfactory plating takes place. At the point where the plating solution leaves the tank, additional oxygen gas is introducted into the solution so that the level of dissolved oxygen in the plating solution in the external piping is high enough to prevent any plating from taking place in the external piping and so that in the external piping the copper is etched or dissolved back into solution. At the end of the external piping, the dissolved oxygen level is reduced so that the dissolved oxygen level of the plating solution in the tank is maintained at the level where plating will take place.

    摘要翻译： 通过独立地控制浴中的镀液和相关的外部管道中的溶解氧含量，使连续化学镀铜系统中的结节形成最小化。 电镀槽中的溶解氧水平保持在这样的值，使得发生令人满意的电镀。 在电镀液离开槽的地方，另外的氧气被引入到溶液中，使得外部管道中的电镀溶液中的溶解氧水平足够高，以防止在外部管道中发生任何电镀 在外部管道中，铜被蚀刻或溶解回溶液中。 在外部管道的末端，溶解氧水平降低，使得罐中的电镀液的溶解氧水平保持在电镀的水平。

    Accelerated etching of chromium
    10.
    发明授权
    Accelerated etching of chromium 失效
    加速蚀刻铬

    公开(公告)号：US06843929B1

    公开(公告)日：2005-01-18

    申请号：US09514526

    申请日：2000-02-28

    申请人： Donald S. Farquhar ,  Edmond O. Fey ,  Elizabeth Foster ,  Michael J. Klodowski ,  Paul G. Rickerl

    发明人： Donald S. Farquhar ,  Edmond O. Fey ,  Elizabeth Foster ,  Michael J. Klodowski ,  Paul G. Rickerl

    IPC分类号： C23F1/26 ,  H01L21/3213 ,  B44C1/22

    CPC分类号： H01L21/32134 ,  C23F1/26

    摘要： A method and associated structure for increasing the rate at which a chromium volume is etched when the chromium body is contacted by an acid solution such as hydrochloric acid. The etch rate is increased by a metallic or steel body in continuous electrical contact with the chromium volume, both of which are in continuous contact with the acid solution. At a temperature between about 21° C. and about 52° C., and a hydrochloric acid concentration (molarity) between about 1.2 M and about 2.4 M, the etch rate is at least a factor of about two greater than an etch rate that would occur in an absence of the steel body. In one embodiment, the chromium volume is a chromium layer that rests upon a conductive layer that includes a metal such as copper, wherein the acid solution is not in contact with the conductive layer. In another embodiment, the chromium volume is a chromium layer located under a conductive layer that includes a metal such as copper, wherein the steel body and the acid solution both contact the chromium layer through an opening in the conductive layer such that the opening exposes the chromium layer.

    摘要翻译： 一种用于提高当铬体与诸如盐酸的酸溶液接触时铬体积被蚀刻的速率的方法和相关结构。 蚀刻速率由与铬体积连续电接触的金属或钢体增加，两者都与酸溶液连续接触。 在约21℃至约52℃的温度和约1.2M至约2.4M之间的盐酸浓度（摩尔浓度）之间，蚀刻速率至少比蚀刻速率大约两倍， 将在没有钢体的情况下发生。 在一个实施方案中，铬体积是沉积在包括诸如铜的金属的导电层上的铬层，其中酸溶液不与导电层接触。 在另一个实施方案中，铬体积是位于导电层下方的铬层，该层包括诸如铜的金属，其中钢体和酸溶液都通过导电层中的开口接触铬层，使得开口暴露于 铬层。