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12 条记录 (耗时 0.015 秒)

    Accelerated etching of chromium
    1.
    发明授权
    Accelerated etching of chromium 失效
    加速蚀刻铬

    公开(公告)号：US06843929B1

    公开(公告)日：2005-01-18

    申请号：US09514526

    申请日：2000-02-28

    申请人： Donald S. Farquhar ,  Edmond O. Fey ,  Elizabeth Foster ,  Michael J. Klodowski ,  Paul G. Rickerl

    发明人： Donald S. Farquhar ,  Edmond O. Fey ,  Elizabeth Foster ,  Michael J. Klodowski ,  Paul G. Rickerl

    IPC分类号： C23F1/26 ,  H01L21/3213 ,  B44C1/22

    CPC分类号： H01L21/32134 ,  C23F1/26

    摘要： A method and associated structure for increasing the rate at which a chromium volume is etched when the chromium body is contacted by an acid solution such as hydrochloric acid. The etch rate is increased by a metallic or steel body in continuous electrical contact with the chromium volume, both of which are in continuous contact with the acid solution. At a temperature between about 21° C. and about 52° C., and a hydrochloric acid concentration (molarity) between about 1.2 M and about 2.4 M, the etch rate is at least a factor of about two greater than an etch rate that would occur in an absence of the steel body. In one embodiment, the chromium volume is a chromium layer that rests upon a conductive layer that includes a metal such as copper, wherein the acid solution is not in contact with the conductive layer. In another embodiment, the chromium volume is a chromium layer located under a conductive layer that includes a metal such as copper, wherein the steel body and the acid solution both contact the chromium layer through an opening in the conductive layer such that the opening exposes the chromium layer.

    摘要翻译： 一种用于提高当铬体与诸如盐酸的酸溶液接触时铬体积被蚀刻的速率的方法和相关结构。 蚀刻速率由与铬体积连续电接触的金属或钢体增加，两者都与酸溶液连续接触。 在约21℃至约52℃的温度和约1.2M至约2.4M之间的盐酸浓度（摩尔浓度）之间，蚀刻速率至少比蚀刻速率大约两倍， 将在没有钢体的情况下发生。 在一个实施方案中，铬体积是沉积在包括诸如铜的金属的导电层上的铬层，其中酸溶液不与导电层接触。 在另一个实施方案中，铬体积是位于导电层下方的铬层，该层包括诸如铜的金属，其中钢体和酸溶液都通过导电层中的开口接触铬层，使得开口暴露于 铬层。

    Patterning a layered chrome-copper structure disposed on a dielectric substrate
    2.
    发明授权
    Patterning a layered chrome-copper structure disposed on a dielectric substrate 失效
    对设置在电介质基板上的分层铬铜结构进行成形

    公开(公告)号：US06335495B1

    公开(公告)日：2002-01-01

    申请号：US09343073

    申请日：1999-06-29

    申请人： Donald S. Farquhar ,  Edmond O. Fey ,  Elizabeth F. Foster ,  Michael J. Klodowski

    发明人： Donald S. Farquhar ,  Edmond O. Fey ,  Elizabeth F. Foster ,  Michael J. Klodowski

    IPC分类号： H01K111

    CPC分类号： H05K3/4641 ,  H05K1/0224 ,  H05K3/064 ,  H05K3/388 ,  H05K2201/015 ,  H05K2201/0338

    摘要： An electrical structure, comprising a first dielectric layer, a patterned layer on the first dielectric layer, and a second dielectric layer on the patterned layer. The patterned layer includes a metal pattern on the first dielectric layer, a metallic pattern on the metal pattern, and a plugged pattern within a remaining space of the patterned layer. The plugged pattern includes a dielectric material. The second dielectric layer is adhesively bonded to a top surface of the patterned layer. The second dielectric layer includes the dielectric material.

    摘要翻译： 电结构，包括第一电介质层，第一电介质层上的图案化层和图案化层上的第二电介质层。 图案化层包括在第一介电层上的金属图案，金属图案上的金属图案，以及图案化层的剩余空间内的堵塞图案。 堵塞图案包括电介质材料。 第二电介质层粘合到图案化层的顶表面上。 第二电介质层包括电介质材料。

    Electroless plating with bi-level control of dissolved oxygen
    4.
    发明授权
    Electroless plating with bi-level control of dissolved oxygen 失效
    无电镀，双层控制溶解氧

    公开(公告)号：US4684545A

    公开(公告)日：1987-08-04

    申请号：US827427

    申请日：1986-02-10

    申请人： Edmond O. Fey ,  Peter Haselbauer ,  Dae Y. Jung ,  Ronald A. Kaschak ,  Hans-Dieter Kilthau ,  Roy H. Magnuson ,  Robert J. Wagner

    发明人： Edmond O. Fey ,  Peter Haselbauer ,  Dae Y. Jung ,  Ronald A. Kaschak ,  Hans-Dieter Kilthau ,  Roy H. Magnuson ,  Robert J. Wagner

    IPC分类号： C23C18/31 ,  C23C18/16 ,  C23C18/40 ,  H05K3/18

    CPC分类号： C23C18/40 ,  C23C18/1617 ,  C23C18/1683 ,  H05K3/187

    摘要： Nodule formation in a continuous electroless copper plating system is minimized by independently controlling the dissolved oxygen contents on the plating solution in the bath and in the associated external piping. The level of dissolved oxygen in the plating tank is maintained at a value such that satisfactory plating takes place. At the point where the plating solution leaves the tank, additional oxygen gas is introduced into the solution so that the level of dissolved oxygen in the plating solution in the external piping is high enough to prevent any plating from taking place in the external piping and so that in the external piping the copper is etched or dissolved back into solution. At the end of the external piping, the dissolved oxygen level is reduced so that the dissolved oxygen level of the plating solution in the tank is maintained at the level where plating will take place.

    摘要翻译： 通过独立地控制浴中的镀液和相关的外部管道中的溶解氧含量，使连续化学镀铜系统中的结节形成最小化。 电镀槽中的溶解氧水平保持在这样的值，使得发生令人满意的电镀。 在电镀溶液离开槽的位置，将另外的氧气引入溶液中，使得外部管道中的电镀溶液中的溶解氧水平足够高，以防止在外部管道中发生任何电镀，因此 在外部管道中，铜被蚀刻或溶解回溶液中。 在外部管道的末端，溶解氧水平降低，使得罐中的电镀液的溶解氧水平保持在电镀的水平。

    Electroless plating with bi-level control of dissolved oxygen, with specific location of chemical maintenance means
    7.
    发明授权
    Electroless plating with bi-level control of dissolved oxygen, with specific location of chemical maintenance means 失效
    化学镀具有双层控制溶解氧，具有化学维护方式的具体位置

    公开(公告)号：US4967690A

    公开(公告)日：1990-11-06

    申请号：US508510

    申请日：1990-04-12

    申请人： Edmond O. Fey ,  Peter Haselbauer ,  Dae Y. Jung ,  Ronald A. Kaschak ,  Hans-Dieter Kilthau ,  Roy H. Magnuson ,  Robert J. Wagner

    发明人： Edmond O. Fey ,  Peter Haselbauer ,  Dae Y. Jung ,  Ronald A. Kaschak ,  Hans-Dieter Kilthau ,  Roy H. Magnuson ,  Robert J. Wagner

    IPC分类号： C23C18/16 ,  C23C18/40 ,  H05K3/18

    CPC分类号： C23C18/40 ,  C23C18/1619 ,  C23C18/1682 ,  C23C18/1683 ,  H05K3/187

    摘要： Nodule formation in a continuous electroless copper plating system is minimized by independently controlling the dissolved oxygen contents on the plating solution in the bath and in the associated external piping. The level of dissolved oxygen in the plating tank is maintained at a value such that satisfactory plating takes place. At the point where the plating solution leaves the tank, additional oxygen gas is introducted into the solution so that the level of dissolved oxygen in the plating solution in the external piping is high enough to prevent any plating from taking place in the external piping and so that in the external piping the copper is etched or dissolved back into solution. At the end of the external piping, the dissolved oxygen level is reduced so that the dissolved oxygen level of the plating solution in the tank is maintained at the level where plating will take place.

    摘要翻译： 通过独立地控制浴中的镀液和相关的外部管道中的溶解氧含量，使连续化学镀铜系统中的结节形成最小化。 电镀槽中的溶解氧水平保持在这样的值，使得发生令人满意的电镀。 在电镀液离开槽的地方，另外的氧气被引入到溶液中，使得外部管道中的电镀溶液中的溶解氧水平足够高，以防止在外部管道中发生任何电镀 在外部管道中，铜被蚀刻或溶解回溶液中。 在外部管道的末端，溶解氧水平降低，使得罐中的电镀液的溶解氧水平保持在电镀的水平。