-
公开(公告)号：US4295102A
公开(公告)日：1981-10-13
申请号：US80366
申请日：1979-09-28
CPC分类号： G01L9/0025 , G10K11/36 , H03B5/326 , H03D7/00
摘要： A surface acoustic wave sensor system in which a predetermined level of coupling between two surface acoustic wave arrays is intentionally provided in order to couple radio frequency energy from one into the other and thereby, in cooperative effect with attendant oscillator circuits and a filter, results in the development of a difference frequency which is a function of the sensed condition.
摘要翻译： 一种表面声波传感器系统，其中有意地提供两个表面声波阵列之间的预定水平的耦合，以将射频能量从一个耦合到另一个，从而与伴随的振荡器电路和滤波器协同效应，导致 形成作为感测条件的函数的差频。
-
公开(公告)号：US6091127A
公开(公告)日：2000-07-18
申请号：US831815
申请日：1997-04-02
IPC分类号： H01L27/144 , H01L31/103 , H01L29/225 , H01L31/0296 , H01L31/0336 , H01L31/105
CPC分类号： H01L31/1032 , H01L27/1443
摘要： This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial lattice-match layer (e.g. ZnSe 114) on a top surface of the circuit; c) an epitaxial insulating layer (e.g. CdTe 102) on the lattice-match layer; and d) at least two epitaxial HgCdTe sensors 101,121 on the insulating layer, with the HgCdTe sensors being electrically connected to the circuitry. Preferably, the circuitry is silicon. Preferably, an IR transparent, spacer layer (e.g. CdTe 120 or CdZnTe) is on the HgCdTe sensors and an HgCdTe filter 122 is on the spacer layer. Preferably, at least one of the HgCdTe sensors and the HgCdTe filter is laterally continuously graded.
摘要翻译： 这是一个集成的IR检测器系统，在集成硅或GaAs电路上具有至少两个外延HgCdTe传感器，也是制造这种系统的方法。 该系统可以包括：a）集成硅或GaAs电路110; b）在电路的顶表面上的外延晶格匹配层（例如ZnSe 114）; c）在晶格匹配层上的外延绝缘层（例如CdTe 102）; 和d）绝缘层上的至少两个外延HgCdTe传感器101,121，其中HgCdTe传感器电连接到电路。 优选地，电路是硅。 优选地，IR透明隔离层（例如CdTe 120或CdZnTe）位于HgCdTe传感器上，并且HgCdTe过滤器122位于间隔层上。 优选地，HgCdTe传感器和HgCdTe过滤器中的至少一个横向连续分级。
-
3.发明授权Mercury cadmium telluride infrared filters and detectors and methods of fabrication 失效汞碲化镉红外滤光片和检测器及其制造方法
公开(公告)号：US5861626A
公开(公告)日：1999-01-19
申请号：US831170
申请日：1997-04-02
IPC分类号： H01L21/304 , H01L27/14 , H01L31/18
CPC分类号： H01L27/14649 , G01J3/0256 , G01J3/26 , G01J3/2803 , H01L21/02381 , H01L21/02411 , H01L21/0256 , H01L21/02562 , H01L21/02625 , H01L21/02639 , H01L27/144 , H01L31/02164 , H01L31/095
摘要： A multiple film integrated infrared (IR) detector assembly 85 consists of detector films 86, 88, 90 having different IR spectral sensitivities which are deposited on a breadboard IR transmissive but electrically insulating substrate 42. Substrate 42 is deposited on an IR filter layer comprising an HgCdTe film 70. By various techniques described, filter film 70 has a varying composition from edge 68 to 72. This compositional gradient of film 70 results in varying IR spectral absorption as shown by IR transmission graphs 10, 12, 14. Film 70 acts as a graded IR filter in concert with the response of the detector films 86, 88, 90. By the proper choice of the compositional gradients in these films, and as a result the IR spectral response, an integrated IR spectrometer may be fabricated whereby each detector 86, 87, 90 detects only specific narrow bands of IR wavelengths.
摘要翻译： 多重膜集成红外（IR）检测器组件85由检测器膜86,88,90组成，其具有不同的IR光谱灵敏度，其被沉积在面包板IR透射但电绝缘基底42上。基底42沉积在包括 HgCdTe膜70.通过所描述的各种技术，过滤膜70具有从边缘68至72变化的组成。膜70的组成梯度导致红外光谱吸收变化，如IR透射图10,12,14所示。膜70作为 与检测器膜86,88,90的响应一致的分级红外滤光器。通过适当选择这些膜中的组成梯度，结果可以制造IR光谱响应，可以制造集成的IR光谱仪，由此每个检测器 86,87,90仅检测特定的IR波长的窄带。
-
公开(公告)号：US4911905A
公开(公告)日：1990-03-27
申请号：US315077
申请日：1989-02-24
申请人： Donald F. Weirauch
发明人： Donald F. Weirauch
CPC分类号： C22B9/02 , C01B19/007 , C01B19/02 , C22B17/06 , Y02P10/234
摘要： The disclosure relates to a method of purifying cadmium and tellurium and forming pure, stoichiometric cadmium telluride therefrom as well as the apparatus for making such cadmium telluride. The cadmium and tellurium are purified by heating each separately to volatilization and passing water in a reducing gas through the volatilized cadmium and tellurium to react with impurities and form gases or precipitates. The cadmium and tellurium are volatilized at different predetermined temperatures such that the amount of each volatilized will be the same so that reaction later takes place with stoichiometric amounts of the elements to form the cadmium telluride. The cadmium telluride is then condensed at low enough temperature so that the remaining gases pass out of the system.
摘要翻译： 本公开涉及一种净化镉和碲并从其形成纯的化学计量的碲化镉的方法以及用于制造这种碲化镉的装置。 镉和碲通过分别加热而分别进行纯化，使挥发和还原气体中的水通过挥发的镉和碲与杂质反应并形成气体或沉淀物。 镉和碲在不同的预定温度下挥发，使得每个挥发的量将相同，以便稍后用化学计量的元素进行反应以形成碲化镉。 然后将碲化镉在足够低的温度下冷凝，使剩余的气体从系统中排出。
-
公开(公告)号：US6140145A
公开(公告)日：2000-10-31
申请号：US291680
申请日：1999-04-13
IPC分类号： H01L27/144 , H01L31/103 , H01L21/00
CPC分类号： H01L31/1032 , H01L27/1443
摘要： This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial lattice-match layer (e.g. ZnSe 114) on a top surface of the circuit; c) an epitaxial insulating layer (e.g. CdTe 102) on the lattice-match layer; and d) at least two epitaxial HgCdTe sensors 101,121 on the insulating layer, with the HgCdTe sensors being electrically connected to the circuitry. Preferably, the circuitry is silicon. Preferably, an IR transparent, spacer layer (e.g. CdTe 120 or CdZnTe) is on the HgCdTe sensors and an HgCdTe filter 122 is on the spacer layer. Preferably, at least one of the HgCdTe sensors and the HgCdTe filter is laterally continuously graded.
-
6.发明授权
公开(公告)号：US6036770A
公开(公告)日：2000-03-14
申请号：US831813
申请日：1997-04-02
摘要： Methods are described for the depositing of a plurality of films, preferably mercury cadmium telluride (HgCdTe), whose compositions vary in a controlled manner to provide unique infrared spectral absorption and detection properties. HgCdTe films 64 and 70 are deposited on opposite sides of electrically insulating, IR transmissive film 42. Initially these HgCdTe films may be of uniform composition laterally from 62 to 66 and 68 to 72. However the interdiffusion and segregation coefficients of Hg and Cd are different and vary differently with respect to temperature. By placing film 70 in contact with heater 9, a controlled lateral gradient in composition of the film may be effected because 44 is hotter than 45 and will produce higher Cd concentration at 68 than 72. Similarly 62 will be higher in Cd than 66, however, the gradient will be much less because 64 is cooler than 70. Through the use of a heater 60, the lateral compositional gradient of 64 may be varied with respect to film 70. The close tracking of the IR properties of 70 and 64 can provide useful and novel integrated IR devices such as multiple band spectrometers.
摘要翻译： 描述了沉积多个膜，优选汞碲化镉（HgCdTe）的方法，其组成以受控的方式变化以提供独特的红外光谱吸收和检测特性。 HgCdTe膜64和70沉积在电绝缘的IR透射膜42的相对侧上。最初，这些HgCdTe膜在62至66和68至72之间可以具有均匀的组成。然而Hg和Cd的相互扩散和偏析系数不同 并且相对于温度变化不同。 通过将膜70放置成与加热器9接触，可以实现膜的组成控制的横向梯度，因为44比45高，并且将在68比72产生更高的Cd浓度。类似地，62在Cd中将高于66，但是 ，因为64比70更冷，所以梯度将会更小。通过使用加热器60，64的侧向组成梯度可以相对于膜70而变化。70和64的IR特性的紧密跟踪可以提供 有用和新颖的集成IR设备，如多频带光谱仪。
-
公开(公告)号：US5320007A
公开(公告)日：1994-06-14
申请号：US977992
申请日：1992-11-18
申请人： Donald F. Weirauch
发明人： Donald F. Weirauch
CPC分类号： B23Q3/103 , Y10S269/90 , Y10T82/10 , Y10T82/2571 , Y10T82/26 , Y10T82/262
摘要： A method and apparatus are provided for holding and positioning objects for a single diamond point turning operation. The objects which may include liquid phase epitaxy films are mounted on multiple platforms (10, 46). The platforms (10, 46) are securely connected to a base (20). The platforms (10, 46) are positioned, independently from one another, for elevation and orientation relative to the base (20) while the platforms (10, 46) are securely connected to the base (20).
摘要翻译： 提供了用于保持和定位用于单个钻石点转动操作的对象的方法和装置。 可以包括液相外延膜的物体安装在多个平台（10,46）上。 平台（10,46）牢固地连接到基座（20）。 平台（10,46）彼此独立地定位成相对于基座（20）升高和定向，而平台（10,46）牢固地连接到基座（20）上。
-
公开(公告)号：US4447393A
公开(公告)日：1984-05-08
申请号：US465129
申请日：1983-02-09
申请人： Donald F. Weirauch
发明人： Donald F. Weirauch
CPC分类号： C22C1/007 , Y10S420/903
摘要： The problem of CdTe sticking to quartz boats is avoided by preventing any presence of cadmium oxides in the as-compounded CdTe. This is accomplished by distilling the cadmium under a high vacuum immediately prior to the CdTe compounding step.
摘要翻译： 通过防止在复合CdTe中存在镉氧化物，可以避免CdTe粘附在石英舟上的问题。 这是通过在CdTe配混步骤之前立即在高真空下蒸馏镉来实现的。
-
9.发明授权Uncooled infrared sensors for the detection and identification of chemical products of combustion 失效用于检测和识别燃烧化学产品的未冷却的红外传感器
公开(公告)号：US5959299A
公开(公告)日：1999-09-28
申请号：US831101
申请日：1997-04-01
申请人： Carlos A. Castro , Malcolm J. Bevan , Sebastian R. Borrello , Kent R. Carson , Luigi Colombo , Herbert F. Schaake , Donald F. Weirauch
发明人： Carlos A. Castro , Malcolm J. Bevan , Sebastian R. Borrello , Kent R. Carson , Luigi Colombo , Herbert F. Schaake , Donald F. Weirauch
IPC分类号： H01L27/146 , H01L31/0296
CPC分类号： H01L27/14652
摘要： This is a sensor for, and a method of, determining if a particular type of flame is present, using at least two uncooled HgCdTe detector films on a common IR transmissive substrate. Specific examples of the types of radiation which can be identified include gasoline flames, natural gas flames, and organic combustion flames (identified, e.g., by comparing the amount of combined carbon dioxide and carbon monoxide to the amount of water vapor). The ratio of carbon dioxide to carbon monoxide can also be determined. The sensor can include a first HgCdTe filter (88) on a common IR transmissive substrate (42), a first uncooled HgCdTe detector film (86) over the first filter (88), and a second uncooled HgCdTe detector film (92) on a CdTe insulator which is either on the first uncooled HgCdTe detector film, or on a second HgCdTe filter (94) provided on the common IR transmissive substrate.
摘要翻译： 这是一种用于确定特定类型的火焰是否存在的传感器，并且使用在共同的IR透射基底上使用至少两个非冷却的HgCdTe检测膜。 可以鉴定的辐射类型的具体实例包括汽油火焰，天然气火焰和有机燃烧火焰（例如通过比较组合的二氧化碳和一氧化碳的量与水蒸气的量的比较来确定）。 也可以确定二氧化碳与一氧化碳的比例。 传感器可以包括在公共IR透射基板（42）上的第一HgCdTe滤光器（88），在第一过滤器（88）上方的第一非冷却的HgCdTe检测器膜（86）和位于第一过滤器（88）上的第二非冷却HgCdTe检测器膜 CdTe绝缘体位于第一非冷却的HgCdTe检测器膜上，或者位于公共IR透射基底上的第二HgCdTe滤光器（94）上。
-
公开(公告)号：US5861321A
公开(公告)日：1999-01-19
申请号：US754949
申请日：1996-11-21
IPC分类号： C30B25/02 , C30B25/18 , H01L21/368 , H01L21/208
CPC分类号： C30B25/18 , C30B25/02 , C30B29/48 , H01L21/02411 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/02625 , H01L21/02628 , H01L21/02658
摘要： A method is provided for producing an n-type or p-type epitaxial layer using a doped substrate material. The method includes growing a substrate (12), preferably from a material to which an epitaxial layer can be lattice-matched. The substrate (12) is doped with a predetermined concentration of dopant (14). Preferably, the dopant (14) possesses the ability to rapidly diffuse through a material. An epitaxial layer (16) is grown upon the doped substrate (12). The epitaxial layer (16) and the doped substrate are annealed, thereby causing the dopant (14) to diffuse from the substrate (14) into the epitaxial layer (16).
摘要翻译： 提供了使用掺杂的衬底材料制造n型或p型外延层的方法。 该方法包括生长衬底（12），优选地从外延层可以与晶格匹配的材料。 衬底（12）掺杂有预定浓度的掺杂剂（14）。 优选地，掺杂剂（14）具有快速扩散通过材料的能力。 在掺杂衬底（12）上生长外延层（16）。 外延层（16）和掺杂衬底被退火，从而使掺杂剂（14）从衬底（14）扩散到外延层（16）中。
-
-
-
-
-
-
-
-
-
搜索结果
18 条记录 (耗时 0.021 秒)
