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    Hardmask materials
    9.
    发明授权
    Hardmask materials 有权
    硬掩模材料

    公开(公告)号：US08178443B2

    公开(公告)日：2012-05-15

    申请号：US12631709

    申请日：2009-12-04

    申请人： Vishwanathan Rangarajan ,  George Andrew Antonelli ,  Bart van Schravendijk

    发明人： Vishwanathan Rangarajan ,  George Andrew Antonelli ,  Bart van Schravendijk

    IPC分类号： H01L21/302 ,  H01L21/00

    CPC分类号： H01L21/31144 ,  C23C16/30 ,  C23C16/325 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/32139 ,  H01L21/76813

    摘要： Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxCy, and BxNy. In some embodiments, a hardmask film includes a germanium-rich GeNx material comprising at least about 60 atomic % of germanium. These hardmasks can be used in a number of back-end and front-end processing schemes in integrated circuit fabrication.

    摘要翻译： 提供具有高硬度和低应力的硬掩模薄膜。 在一些实施方案中，膜具有在约-600MPa和600MPa之间的应力以及至少约12GPa的硬度。 在一些实施例中，通过在PECVD处理室中使用多个致密等离子体后处理沉积多个掺杂或未掺杂碳化硅的子层来制备硬掩模膜。 在一些实施例中，硬掩模膜包括选自SixByCz，SixByNz，SixByCzNw，BxCy和BxNy的高硬度含硼膜。 在一些实施例中，硬掩模膜包括富含锗的GeN x材料，其包含至少约60原子％的锗。 这些硬掩模可用于集成电路制造中的许多后端和前端处理方案。

    DEPOSITING CONFORMAL BORON NITRIDE FILMS
    10.
    发明申请
    DEPOSITING CONFORMAL BORON NITRIDE FILMS 有权
    沉积一致的硼酸盐膜

    公开(公告)号：US20130008378A1

    公开(公告)日：2013-01-10

    申请号：US13615318

    申请日：2012-09-13

    申请人： George Andrew Antonelli ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Pramod Subramonium

    发明人： George Andrew Antonelli ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Pramod Subramonium

    IPC分类号： C23C16/52

    CPC分类号： H01L21/02112 ,  C23C16/342 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/0234 ,  H01L29/4983 ,  H01L29/517 ,  H01L29/665 ,  H01L29/7843

    摘要： A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower then silicon nitride.

    摘要翻译： 形成氮化硼或氮化硼介质的方法产生没有负载效应的共形层。 介电层通过基板上的含硼膜的化学气相沉积（CVD）形成，至少部分沉积不经等离子体进行，然后将沉积的含硼膜暴露于等离子体。 CVD组件主导沉积过程，产生不带负载效应的保形膜。 电介质是可灰化的，并且可以用氢等离子体除去而不会影响周围的材料。 与其它前端隔离物或诸如氧化硅或氮化硅的硬掩模材料相比，电介质具有低得多的湿蚀刻速率，并且具有比氮化硅低得多的介电常数。