摘要:
Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus includes a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.
摘要:
Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus includes a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.
摘要:
Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.
摘要:
Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, and a remote plasma source configured to provide a remote plasma to the load lock.
摘要:
Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.
摘要:
Protective caps residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Protective caps are formed by depositing a source layer of dopant-generating material (e.g., material generating B, Al, Ti, etc.) over an exposed copper line, converting the upper portion of the source layer to a passivated layer (e.g., nitride or oxide) while allowing an unmodified portion of a dopant-generating source layer to remain in contact with copper, and, subsequently, allowing the dopant from the unmodified portion of source layer to controllably diffuse into and/or react with copper, thereby forming a thin protective cap within copper line. The cap may contain a solid solution or an alloy of copper with the dopant.
摘要:
Protective caps residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Protective caps are formed by depositing a first layer of aluminum-containing material over an exposed copper line by treating an oxide-free copper surface with an organoaluminum compound in an absence of plasma at a substrate temperature of at least about 350° C. The formed aluminum-containing layer is passivated either partially or completely in a chemical conversion which forms Al—N, Al—O or both Al—O and Al—N bonds in the layer. Passivation is performed in some embodiments by contacting the substrate having an exposed first layer with an oxygen-containing reactant and/or nitrogen-containing reactant in the absence of plasma. Protective caps can be formed on substrates comprising exposed ULK dielectric. The aluminum-containing layer residing on the dielectric portion will typically spontaneously form non-conductive layer comprising Al—O bonds.
摘要:
Protective caps residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Protective caps are formed by depositing a source layer of dopant-generating material (e.g., material generating B, Al, Ti, etc.) over an exposed copper line, converting the upper portion of the source layer to a passivated layer (e.g., nitride or oxide) while allowing an unmodified portion of a dopant-generating source layer to remain in contact with copper, and, subsequently, allowing the dopant from the unmodified portion of source layer to controllably diffuse into and/or react with copper, thereby forming a thin protective cap within copper line. The cap may contain a solid solution or an alloy of copper with the dopant.
摘要:
Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate.
摘要:
Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.