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503 条记录 (耗时 0.032 秒)

    Pitch multiplication using self-assembling materials
    4.
    发明授权
    Pitch multiplication using self-assembling materials 有权

    公开(公告)号：US10515801B2

    公开(公告)日：2019-12-24

    申请号：US12908206

    申请日：2010-10-20

    申请人： Gurtej Sandhu

    发明人： Gurtej Sandhu

    IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

    摘要： Self-assembling materials, such as block copolymers, are used as mandrels for pitch multiplication. The copolymers are deposited over a substrate and directed to self-assemble into a desired pattern. One of the blocks forming the block copolymers is selectively removed. The remaining blocks are used as mandrels for pitch multiplication. Spacer material is blanket deposited over the blocks. The spacer material is subjected to a spacer etch to form spacers on sidewalls of the mandrels. The mandrels are selectively removed to leave free-standing spacers. The spacers may be used as pitch-multiplied mask features to define a pattern in an underlying substrate.

    Self-aligned nano-structures
    6.
    发明授权
    Self-aligned nano-structures 有权
    自对准纳米结构

    公开(公告)号：US08946907B2

    公开(公告)日：2015-02-03

    申请号：US13526225

    申请日：2012-06-18

    申请人： Gurtej Sandhu

    发明人： Gurtej Sandhu

    IPC分类号： H01L23/52 ,  H01L21/311 ,  H01L21/033

    CPC分类号： H01L23/5226 ,  H01L21/0337 ,  H01L21/31144 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for creating structures in a semiconductor assembly is provided. The method includes etching apertures into a dielectric layer and applying a polymer layer over the dielectric layer. The polymer layer is applied uniformly and fills the apertures at different rates depending on the geometry of the apertures, or on the presence or absence of growth accelerating material. The polymer creates spacers for the etching of additional structure in between the spacers. The method is capable of achieving structures smaller than current lithography techniques.

    摘要翻译： 提供了一种用于在半导体组件中产生结构的方法。 该方法包括将孔蚀刻到电介质层中，并在该介电层上施加聚合物层。 均匀地施加聚合物层，并根据孔的几何形状，或者存在或不存在生长促进材料，以不同的速率填充孔。 该聚合物产生用于蚀刻间隔物之间​​的附加结构的间隔物。 该方法能够实现比当前光刻技术更小的结构。

    Nonvolatile memory cells and methods of forming nonvolatile memory cell
    7.
    发明授权
    Nonvolatile memory cells and methods of forming nonvolatile memory cell 有权
    非易失性存储单元和形成非易失性存储单元的方法

    公开(公告)号：US08796661B2

    公开(公告)日：2014-08-05

    申请号：US12917348

    申请日：2010-11-01

    申请人： Nirmal Ramaswamy ,  Gurtej Sandhu

    发明人： Nirmal Ramaswamy ,  Gurtej Sandhu

    IPC分类号： H01L47/00 ,  H01L21/06 ,  H01L21/20

    CPC分类号： H01L45/085 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/1273 ,  H01L45/14 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1683

    摘要： A method of forming a nonvolatile memory cell includes forming a first electrode having a first current conductive material and a circumferentially self-aligned second current conductive material projecting elevationally outward from the first current conductive material. The second current conductive material is different in composition from the first current conductive material. A programmable region is formed over the first current conductive material and over the projecting second current conductive material of the first electrode. A second electrode is formed over the programmable region. In one embodiment, the programmable region is ion conductive material, and at least one of the first and second electrodes has an electrochemically active surface directly against the ion conductive material. Other method and structural aspects are disclosed.

    摘要翻译： 形成非易失性存储单元的方法包括形成具有第一电流导电材料的第一电极和从第一电流导电材料向外突出的周向自对准的第二导电材料。 第二电流导电材料的组成不同于第一电流导电材料。 可编程区域形成在第一电流导电材料之上并且在第一电极的突出的第二电流导电材料之上。 在可编程区域上形成第二电极。 在一个实施例中，可编程区域是离子传导材料，并且第一和第二电极中的至少一个电极具有直接抵靠离子导电材料的电化学活性表面。 公开了其它方法和结构方面。

    Methods of forming a non-volatile resistive oxide memory array
    8.
    发明授权
    Methods of forming a non-volatile resistive oxide memory array 有权
    形成非易失性电阻氧化物存储器阵列的方法

    公开(公告)号：US08637113B2

    公开(公告)日：2014-01-28

    申请号：US13354163

    申请日：2012-01-19

    申请人： Gurtej Sandhu ,  John Smythe ,  Bhaskar Srinivasan

    发明人： Gurtej Sandhu ,  John Smythe ,  Bhaskar Srinivasan

    IPC分类号： C23C18/00 ,  C23C20/00 ,  C23C28/00 ,  C23C30/00 ,  H01C17/06

    CPC分类号： H01L27/101 ,  H01L21/0271 ,  Y10S438/947

    摘要： A method of forming a non-volatile resistive oxide memory array includes forming a plurality of one of conductive word lines or conductive bit lines over a substrate. Metal oxide-comprising material is formed over the plurality of said one of the word lines or bit lines. A series of elongated trenches is provided over the plurality of said one of the word lines or bit lines. A plurality of self-assembled block copolymer lines is formed within individual of the trenches in registered alignment with and between the trench sidewalls. A plurality of the other of conductive word lines or conductive bit lines is provided from said plurality of self-assembled block copolymer lines to form individually programmable junctions comprising said metal oxide-comprising material where the word lines and bit lines cross one another.

    摘要翻译： 形成非易失性电阻氧化物存储器阵列的方法包括在衬底上形成多个导电字线或导电位线。 含金属氧化物的材料形成在多条所述一条字线或位线中。 在多个所述一条字线或位线之间提供一系列细长的沟槽。 多个自组装嵌段共聚物线形成在沟槽中的各个内，与沟槽侧壁之间对准并且在沟槽侧壁之间形成。 从所述多个自组装嵌段共聚物线路提供多个导电字线或导电位线，以形成包含所述金属氧化物的材料的单独可编程的结，其中字线和位线彼此交叉。

    PHOTONIC DEVICE AND METHODS OF FORMATION
    9.
    发明申请
    PHOTONIC DEVICE AND METHODS OF FORMATION 有权
    光电器件及其形成方法

    公开(公告)号：US20130188903A1

    公开(公告)日：2013-07-25

    申请号：US13354767

    申请日：2012-01-20

    申请人： Gurtej Sandhu ,  Roy Meade

    发明人： Gurtej Sandhu ,  Roy Meade

    IPC分类号： G02B6/12 ,  H01L21/02

    CPC分类号： G02B6/12 ,  B82Y20/00 ,  G02B6/122 ,  G02B6/1223 ,  G02B6/1225 ,  G02B6/13 ,  G02B2006/121 ,  H01L2933/0083

    摘要： A photonic device and methods of formation that provide an area providing reduced optical coupling between a substrate and an inner core of the photonic device are described. The area is formed using holes in the inner core and an outer cladding. The holes may be filled with materials which provide a photonic crystal. Thus, the photonic device may function as a waveguide and as a photonic crystal.

    摘要翻译： 描述了提供在光子器件的衬底和内核之间提供减小的光学耦合的区域的光子器件和形成方法。 该区域由内芯和外包层中的孔形成。 孔可以填充提供光子晶体的材料。 因此，光子器件可以用作波导和光子晶体。

    High-performance diode device structure and materials used for the same
    10.
    发明授权
    High-performance diode device structure and materials used for the same 有权
    高性能二极管器件的结构和材料使用相同

    公开(公告)号：US08476140B2

    公开(公告)日：2013-07-02

    申请号：US13352833

    申请日：2012-01-18

    申请人： Gurtej Sandhu ,  Bhaskar Srinivasan

    发明人： Gurtej Sandhu ,  Bhaskar Srinivasan

    IPC分类号： H01L21/8222 ,  H01L21/20

    CPC分类号： H01L29/24 ,  H01L27/24 ,  H01L45/00

    摘要： A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.

    摘要翻译： 包括二极管的二极管和存储器件，其中二极管包括导电部分和由第一材料形成的另一部分，该第一材料具有允许在向材料施加电压时第一次降低材料的电阻率的特性，从而允许电流 流过其中，并且具有允许第一材料的电阻率响应于第一材料的温度升高而第二次降低的特征。