公开(公告)号：US20200043744A1

公开(公告)日：2020-02-06

申请号：US16527520

申请日：2019-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Toru ITO ,  Masahito MORI ,  Tadamitsu KANEKIYO

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/66 ,  H01L21/67 ,  H01J37/32

Abstract: Provided is a plasma processing method for selectively removing, after plasma etching using a mask having an amorphous carbon film containing boron, the amorphous carbon film using plasma from a silicon nitride film, a silicon oxide film or a tungsten film. The plasma processing method includes a removing step of removing the amorphous carbon film using plasma generated by mixed gas of O2 gas and CH3F gas, or CH2F2 gas.

公开(公告)号：US20160079073A1

公开(公告)日：2016-03-17

申请号：US14626909

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Miyako MATSUI ,  Kenetsu YOKOGAWA ,  Tadamitsu KANEKIYO ,  Tetsuo ONO ,  Kazunori SHINODA

IPC: H01L21/3065

CPC classification number: H01L21/32137 ,  B81C1/00531 ,  H01J37/321 ,  H01J37/32422 ,  H01L21/02337 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32135 ,  H01L21/32136

Abstract: A plasma processing method includes: a first step of introducing a gas having reactivity with a film to be processed disposed in advance on a top surface of a wafer into a processing chamber to form an adhesion layer on the film; a second step of expelling a part of the gas remaining in the processing chamber while supply of the gas having reactivity is stopped; a third step of introducing a rare gas into the processing chamber to form a plasma and desorbing reaction products of the adhesion layer and the film to be processed using particles and vacuum ultraviolet light in the plasma; and a fourth step of expelling the reaction products while the plasma is not formed.

Abstract translation: 等离子体处理方法包括：将预先设置的待加工膜与反应性的气体引入晶片的上表面的第一步骤，以在膜上形成粘合层; 在停止具有反应性的气体的供给的同时排出残留在处理室中的一部分气体的第二步骤; 将稀有气体引入处理室中以在等离子体中形成等离子体并使用粒子和真空紫外光解吸粘合层和待加工膜的反应产物的第三步骤; 以及在不形成等离子体时排出反应产物的第四步骤。

公开(公告)号：US20140137059A1

公开(公告)日：2014-05-15

申请号：US14159465

申请日：2014-01-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji NISHIO ,  Tadamitsu KANEKIYO ,  Yoshiyuki OOTA ,  Tsuyoshi MATSUMOTO

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G06F17/5086 ,  H01J37/32082 ,  H01J37/32642 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/6875

Abstract: Plasma processing focus ring design arrangements, including: acquiring a surface voltage and a sheath thickness above a surface of the object to be processed, and a surface voltage and a sheath thickness above a surface of the focus ring, by an equivalent circuit analysis; performing 2D plasma and 2D electric field analysis, based on the equivalent circuit analysis; and designing configuration of the focus ring and the processing stage, to achieve a plasma-sheath interface flattening condition by making a sum of a height from a height reference point to a surface of the object and a sheath thickness from the surface of the object to a plasma-sheath interface above the object, equal to a sum of a height from the height reference point to a surface of the focus ring and a sheath thickness from the surface of the focus ring to a plasma-sheath interface above the focus ring.

Abstract translation: 等离子体处理聚焦环设计布置，包括：通过等效电路分析获得待处理物体表面上方的表面电压和护套厚度，以及聚焦环表面上方的表面电压和护套厚度; 基于等效电路分析进行2D等离子体和2D电场分析; 以及设计聚焦环和处理阶段的配置，通过从物体的表面到物体表面的高度和从皮肤表面到外部的厚度的和来实现等离子体 - 皮肤界面平坦化的条件 物体上方的等离子体 - 鞘界面等于从高度参考点到聚焦环表面的高度和从聚焦环表面到聚焦环上方的等离子体鞘界面的鞘厚度之和。

公开(公告)号：US20160079055A1

公开(公告)日：2016-03-17

申请号：US14625898

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Naoyuki KOFUJI ,  Tadamitsu KANEKIYO ,  Kazunori SHINODA ,  Junichi TANAKA

IPC: H01L21/02 ,  B08B7/02 ,  B06B3/00

CPC classification number: H01L21/02068 ,  B06B3/00 ,  B08B7/028 ,  H01L21/02046

Abstract: A sample cleaning apparatus includes a vibrating unit which ultrasonically vibrates a sample while the sample is mounted and held on a sample stage arranged in a processing chamber, the vibrating unit including: a dielectric film which is arranged on the sample stage and above which the sample is mounted; electrodes which are arranged adjacent to each other in the dielectric film; and a radio frequency power supply which supplies radio frequency power at frequencies in a prescribed range to the electrodes while the sample is hold on the sample stage; and a gas supply unit which forms a gas flow in a direction along a surface of the sample, so that particles are expelled.

Abstract translation: 一种样品清洁装置，包括：振动单元，其在样本被安装并且保持在布置在处理室中的样品台上时超声振动样本，所述振动单元包括：电介质膜，其布置在所述样品台上方， 被安装 在电介质膜中相邻设置的电极; 以及射频电源，其在样本保持在所述样品台上的同时，将规定范围的频率的射频功率提供给所述电极; 以及气体供给单元，其在沿着样品表面的方向上形成气流，使得颗粒被排出。

公开(公告)号：US20140231015A1

公开(公告)日：2014-08-21

申请号：US14262466

申请日：2014-04-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Masaru IZAWA ,  Tadamitsu KANEKIYO

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/3065 ,  Y10T137/0402

Abstract: The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

Abstract translation: 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性 同时保持工艺深度的面内均匀性。