公开(公告)号：US20060216928A1

公开(公告)日：2006-09-28

申请号：US11422826

申请日：2006-06-07

申请人： HUA CHUNG ,  LING CHEN ,  BARRY CHIN

发明人： HUA CHUNG ,  LING CHEN ,  BARRY CHIN

IPC分类号： H01L21/4763

CPC分类号： C23C16/45531 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76843

摘要： Embodiments of the invention relate to methods for depositing a metal silicon nitride layer on a substrate during an atomic layer deposition (ALD) process. In one embodiment, the method provides positioning a substrate within a process chamber containing a centralized expanding channel that conically tapers towards and substantially covers the substrate, flowing a process gas into the centralized expanding channel to form a circular flow pattern, exposing the substrate to the process gas having the circular flow pattern, and exposing the substrate sequentially to chemical precursors during an ALD process to form a metal silicon nitride material. In one example, the ALD process provides sequentially pulsing a metal precursor, a nitrogen precursor, and a silicon precursor into the process gas having the circular flow pattern. The metal silicon nitride material may contain tantalum or titanium. In other examples, the process gas or the substrate may be exposed to a plasma.

摘要翻译： 本发明的实施例涉及在原子层沉积（ALD）过程中在衬底上沉积金属氮化硅层的方法。 在一个实施例中，该方法提供将衬底定位在处理室内，该处理室包含集中扩展通道，该中心膨胀通道朝向并基本上覆盖衬底的锥形渐缩，将工艺气体流入集中扩展通道以形成圆形流动图案，将衬底暴露于 具有圆形流动图案的工艺气体，并且在ALD工艺期间将衬底依次暴露于化学前体以形成金属氮化硅材料。 在一个实例中，ALD工艺顺序地将金属前体，氮前体和硅前体顺序地引入到具有圆形流动图案的工艺气体中。 金属氮化硅材料可以包含钽或钛。 在其它实例中，工艺气体或衬底可以暴露于等离子体。

公开(公告)号：US20070283886A1

公开(公告)日：2007-12-13

申请号：US11749064

申请日：2007-05-15

申请人： HUA CHUNG ,  Ling Chen ,  Jick Yu ,  Mei Chang

发明人： HUA CHUNG ,  Ling Chen ,  Jick Yu ,  Mei Chang

IPC分类号： C23C16/00

CPC分类号： H01L23/53238 ,  C23C14/046 ,  C23C14/165 ,  C23C14/3414 ,  C23C16/045 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76871 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10S438/903 ,  H01L2924/00

摘要： A system for processing a substrate is provided which includes at least one atomic layer deposition (ALD) chamber for depositing a barrier layer containing tantalum and at least one physical vapor deposition (PVD) metal seed chamber for depositing a metal seed layer on the barrier layer. The at least one ALD chamber may be in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source. In one example, the tantalum-containing compound is an organometallic tantalum precursor, such as PDMAT. In another example, the second precursor source contains a nitrogen precursor, such as ammonia. The PDMAT may have a chlorine concentration of about 100 ppm or less, preferably, about 30 ppm or less, and more preferably, about 5 ppm or less. In some examples, the PVD metal seed chamber is used to deposit a copper-containing metal seed layer.

摘要翻译： 提供了一种用于处理衬底的系统，其包括用于沉积包含钽的阻挡层的至少一个原子层沉积（ALD）室和用于在阻挡层上沉积金属籽晶层的至少一个物理气相沉积（PVD）金属种子室 。 所述至少一个ALD室可以与提供含钽化合物和第二前体源的第一前体源流体连通。 在一个实例中，含钽化合物是有机金属钽前体，例如PDMAT。 在另一个实例中，第二前体源含有氮前体，例如氨。 PDMAT的氯浓度可以为约100ppm以下，优选为约30ppm以下，更优选为约5ppm以下。 在一些实例中，PVD金属种子室用于沉积含铜金属种子层。

公开(公告)号：US20080041313A1

公开(公告)日：2008-02-21

申请号：US11925667

申请日：2007-10-26

申请人： LING CHEN ,  VINCENT KU ,  DIEN-YEH WU ,  HUA CHUNG ,  ALAN OUYE ,  NORMAN NAKASHIMA ,  MEI CHANG

发明人： LING CHEN ,  VINCENT KU ,  DIEN-YEH WU ,  HUA CHUNG ,  ALAN OUYE ,  NORMAN NAKASHIMA ,  MEI CHANG

IPC分类号： C23C16/00

CPC分类号： C23C16/34 ,  C23C16/4404 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871 ,  Y10T137/0396

摘要： Embodiments as described here provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is an ampoule assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.

摘要翻译： 这里描述的实施例提供了一种用于执行原子层沉积工艺的装置和方法。 在一个实施例中，沉积室组件包括具有基板接收表面的基板支撑件和包含从腔室盖的中心部分延伸的锥形通道的腔室盖和从通道延伸到腔室的周边部分的底表面 盖，底表面成形并定尺寸为基本上覆盖基板接收表面。 该系统还包括联接到逐渐扩展的通道的一个或多个阀，以及耦合到每个阀的一个或多个气体源。 在一个示例中，气源是安瓿组件，其通过至少一个断开配件附接到沉积室，并且包含远离气体出口的入口管。

公开(公告)号：US20110111603A1

公开(公告)日：2011-05-12

申请号：US12953220

申请日：2010-11-23

申请人： BARRY L. CHIN ,  ALFRED W. MAK ,  LAWRENCE CHUNG-LAI LEI ,  MING XI ,  HUA CHUNG ,  KEN KAUNG LAI ,  JEONG SOO BYUN

发明人： BARRY L. CHIN ,  ALFRED W. MAK ,  LAWRENCE CHUNG-LAI LEI ,  MING XI ,  HUA CHUNG ,  KEN KAUNG LAI ,  JEONG SOO BYUN

IPC分类号： H01L21/465 ,  C23C16/455 ,  C23C16/458

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

公开(公告)号：US20120000490A1

公开(公告)日：2012-01-05

申请号：US13175170

申请日：2011-07-01

申请人： HUA CHUNG ,  Sang Won Kang

发明人： HUA CHUNG ,  Sang Won Kang

IPC分类号： B08B9/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45576

摘要： Methods and apparatus for cleaning a showerhead and other chamber components used in a chemical vapor deposition process are provided. The methods comprise establishing a thermal gradient in a chamber having a showerhead assembly with deposited material thereon, providing a halogen containing cleaning gas to the chamber, wherein the thermal gradient causes a turbulent or convective flow of the cleaning gas, removing the coating of deposited material from the showerhead assembly by reacting the halogen containing cleaning gas with the deposited material, and exhausting reaction by-products from the chamber.

摘要翻译： 提供了用于清洁在化学气相沉积工艺中使用的喷头和其它室组件的方法和设备。 所述方法包括在具有在其上具有沉积材料的喷头组件的腔室中建立热梯度，向腔室提供含卤素的清洁气体，其中热梯度引起清洁气体的湍流或对流流动，去除沉积材料的涂层 通过使含有卤素的清洁气体与沉积材料反应从喷淋头组件中排出反应副产物。

公开(公告)号：US20070190780A1

公开(公告)日：2007-08-16

申请号：US11691617

申请日：2007-03-27

申请人： HUA CHUNG ,  Rongjun Wang ,  Nirmalya Maity

发明人： HUA CHUNG ,  Rongjun Wang ,  Nirmalya Maity

IPC分类号： H01L21/44

CPC分类号： C23C16/45529 ,  C23C16/02 ,  C23C16/0281 ,  C23C16/14 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76876

摘要： Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.

摘要翻译： 提供了通过原子层沉积处理衬底以沉积一层或多层材料层的阻挡层的方法。 在一个方面，提供了一种处理衬底的方法，包括通过交替地引入含有金属的化合物的一种或多种脉冲和含氮化合物的一个或多个脉冲，在衬底表面的至少一部分上沉积金属氮化物阻挡层 以及通过交替地引入一种或多种含金属化合物的脉冲和一种或多种还原剂的脉冲，在金属氮化物阻挡层的至少一部分上沉积金属阻挡层。 可以在沉积金属氮化物阻挡层和/或金属阻挡层之前在衬底表面上进行浸泡工艺。